EP0133304B1 - Dispositif pour traiter un substrat mince avec du liquide dans le procédé de passage continu - Google Patents

Dispositif pour traiter un substrat mince avec du liquide dans le procédé de passage continu Download PDF

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Publication number
EP0133304B1
EP0133304B1 EP19840108901 EP84108901A EP0133304B1 EP 0133304 B1 EP0133304 B1 EP 0133304B1 EP 19840108901 EP19840108901 EP 19840108901 EP 84108901 A EP84108901 A EP 84108901A EP 0133304 B1 EP0133304 B1 EP 0133304B1
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EP
European Patent Office
Prior art keywords
substrate
container
liquid
line
slots
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
EP19840108901
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German (de)
English (en)
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EP0133304A1 (fr
Inventor
Paul-Gerhard Dr. Maurer
Daniel Dr. Neupert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nukem GmbH
Original Assignee
Nukem GmbH
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Filing date
Publication date
Application filed by Nukem GmbH filed Critical Nukem GmbH
Publication of EP0133304A1 publication Critical patent/EP0133304A1/fr
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Publication of EP0133304B1 publication Critical patent/EP0133304B1/fr
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23GCLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G3/00Apparatus for cleaning or pickling metallic material
    • C23G3/02Apparatus for cleaning or pickling metallic material for cleaning wires, strips, filaments continuously
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05CAPPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C3/00Apparatus in which the work is brought into contact with a bulk quantity of liquid or other fluent material
    • B05C3/02Apparatus in which the work is brought into contact with a bulk quantity of liquid or other fluent material the work being immersed in the liquid or other fluent material
    • B05C3/09Apparatus in which the work is brought into contact with a bulk quantity of liquid or other fluent material the work being immersed in the liquid or other fluent material for treating separate articles
    • B05C3/10Apparatus in which the work is brought into contact with a bulk quantity of liquid or other fluent material the work being immersed in the liquid or other fluent material for treating separate articles the articles being moved through the liquid or other fluent material
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B11/00Cleaning flexible or delicate articles by methods or apparatus specially adapted thereto
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/08Apparatus, e.g. for photomechanical printing surfaces

Definitions

  • the invention relates to a method and a device for treating thin substrates with liquid according to the preambles of claims 1 and 7.
  • EP-A-0 032 530 describes a device for treating plate-shaped objects, such as printed circuit boards, which are guided horizontally through a container filled with liquid. Wipers interact with the objects like rollers. A system for pickling wires, strips or the like in an acid bath can be found in DE-A-17 71 934.
  • the object of the present invention is to provide a method and a device for treating substrates with liquid in a continuous process, which ensures that a uniform treatment of the surface takes place even with short treatment times, without the risk that the substrate during the treatment is in particular mechanically deformed, which would damage the substrate and thus render it unusable.
  • a device for treating thin substrate with liquid comprising a container which is preferably rectangular in section, open at the top and closed at the bottom and which has passage slits on two opposite walls for the horizontal or almost horizontal guidance of the substrate in the liquid and is arranged in an overflow vessel, from which a first conduit having a delivery unit emerges, the free end of which opens into the container below the substrate, which is characterized in that the free end is used to adjust the pressure acting on the substrate through the liquid the line is aligned with the underside of the substrate so that there is a second connection between the overflow vessel and the container for the controlled dispensing of liquid into the area of the container above the substrate, that a riser line extends from the container below the substrate eht, which is connected to the container above the substrate and that an overflow line determining the liquid level starts from the container above the substrate.
  • a device in which the substrate is subjected to a uniform pressure load during the treatment, which ensures that mechanical deformations cannot occur.
  • treating the substrate with the liquid can be referred to as floating with liquid.
  • This buoyancy comprises various processes in a continuous process such as wetting, rinsing, degreasing, coating, etching or chemical conversion. Particularly in the case of processes such as rinsing (detachment effects), etching and chemical conversion, contact times that can be precisely observed, which can be in the range of seconds, are required.
  • the second line can be branched off from the first line after the conveying unit and have a throttle in the section leading to the container in order to introduce liquid into the container above the substrate in a controlled manner.
  • the container is connected via an overflow line which determines the liquid level, into which the riser line opens, to a liquid reservoir which in turn is connected to an overflow vessel on the bottom side.
  • a corresponding device ensures that the pressure conditions around the substrate passed through the container are set in such a way that mechanical deformation cannot occur, so that damage to the substrate is excluded.
  • gas nozzles are arranged both before the inlet slot and after the outlet slot, above and below the transport plane of the substrate. Inert gas can then be emitted from these gas nozzles over the entire width of the inlet or outlet slot, so that liquid emerging from the slots is pushed back, so that the substrate is essentially no longer exposed to the liquid after leaving the container.
  • the through slots of the container are dimensioned so that they are only slightly wider than the substrate thickness.
  • the aforementioned guide device which preferably consist of two V-rails, which hold the substrates on both sides and which in turn run in two rails, which lead through the entry and exit slots, the respective slot should only be about 2 mm thicker than the substrates itself.
  • the slot length itself results from the depth of the substrates to be treated.
  • the liquid portion to be dispensed onto the substrate could also be conducted at an angle deviating from 90 ° to the underside of the substrate, it has proven to be advantageous for the supply line for the surge material to be guided vertically upward into the container, so that the Exit of the liquid portion is also oriented perpendicular or almost perpendicular to the underside of the substrate to be treated.
  • the line the free end of which can be provided with slot nozzles for the uniform distribution of the liquid portion on the substrate, can preferably be brought up to 7.5 cm to 4 cm to the transport plane of the substrate.
  • the surge intensity itself can be set by the delivery unit arranged in the line, for example a pump.
  • the treatment times for thin, fragile substrates can be set such that times in the seconds range as well as in the minutes range result. This essentially depends on the transport speed of the substrate through the container and the dimensioning of the container itself.
  • the method is characterized in that the hydrostatic pressure caused by the liquid column above the substrate is equal to or approximately the same as the pressure acting on the underside of the substrate, which is also determined by the proportion of liquid impinging on the underside of the substrate in a controlled manner .
  • the device 10 comprises a preferably rectangular section 12 with diametrically arranged inlet and outlet slots 14 and 16 through which the substrate 18 can be guided through the container 12.
  • the container 12 is arranged in an overflow vessel 20, from which in turn lines 22 and 24 extend from the bottom.
  • the line 24 is connected to a liquid reservoir 26, which in turn is connected to the container 12 via a line 28, the line 28 opening into the container above the slots 14 and 16.
  • the line 22 leads back into the container 12 and has a delivery unit such as a pump 30.
  • a further line 32 then branches off from the line 22 to the conveying unit 30, which likewise opens into the container 12, likewise above the passage slots 14 and 16.
  • a throttle 34 can optionally be arranged in the line 32, around which the line 32 is connected to be able to adjust the liquid to be dispensed into the container 12 to the desired extent.
  • a riser 36 extends from the bottom region of the container 12 and opens into the line 28.
  • the line 22 is introduced into the container 12 such that the section 38 guided in the container 12 is guided approximately in the longitudinal direction of the container 12 and thus the liquid emerging from the line 22 or 38 vertically or in strikes the substrate 18 guided through the slots 14 and 16 approximately perpendicularly.
  • liquid originating from the liquid 26 or the overflow vessel 20 is pumped into the container 12 by means of the delivery unit 30 to such an extent that a liquid level is reached which extends to the connection 28 which specifies the height of the liquid level.
  • the line 32 and the riser 36 are filled at the same time.
  • the liquid emerging from the passage slots 14 and 16 is taken up by the collecting vessel 20 and fed back to the circuit described above via the line 22 and the conveying unit 30. If a substrate 18 is now passed through the passage slots 14 and 16, the passage gaps 14 and 16 narrow, so that the proportion of the liquid entering the collecting container 20 is reduced.
  • the delivery unit 30 can continue to operate with the same delivery rate, there is no one-sided pressure build-up from below the substrate 18 is caused because excess liquid can flow back into the liquid reservoir 26 via the riser pipe 36 and the overflow line 28.
  • the liquid level and thus the hydrostatic pressure above the substrate 18 cannot drop due to leakage losses at the slots, since liquid 32 is continuously replenished via the line 32. In this case, however, an impermissible pressure rise cannot occur either, since the liquid level is predetermined by the overflow line 28. If necessary, the inflow into the region of the container 12 above the substrate 18 can be regulated to the required extent by means of the throttle 34.
  • the substrate 18 does not have to be held mechanically by any transport rollers or by stabilizing or guiding rollers and must be guided through the container 12, in a particularly noteworthy embodiment of the invention, the substrate 18 is received by a holding device 36, as shown in FIG. 2.
  • the holding device consists of two rails 42 and 44 which receive the side edges 38 and 40 of the substrate 18 and which have mutually facing concave, preferably V-shaped recesses 46 and 48.
  • the side edges 38, 40 are received by these recesses 46, 48, so that now only the rails 42, 44 themselves have to be transported, that is to say in particular through the slots 14 and 16 of the container 12, in order to hold the substrate 18 in the Container 12 to treat existing liquid.
  • the slots 14 and 16 are preferably slot nozzles 50, 52, 54 and 56, from which an inert gas can flow out in the direction of the passage slots 14, 16 in order to be able to retain the liquid entrained by the substrate 18.
  • the nozzles 50 to 56 are preferably arranged or designed with regard to their outlet opening in such a way that the entire width of the slots 14 and 16 is detected both below and above the substrate 18.
  • a corresponding solar cell comprises a substrate support, for example in the form of a glass plate of size 30 x 30 cm 2 with a thickness of approximately 1.5 mm.
  • a metal film made of silver, for example, is vapor-deposited onto this glass plate and serves as the first electrical contact.
  • a cadmium sulfide layer is then evaporated onto this metal film.
  • the surface of the cadmium sulfide layer must be roughened with an aqueous hydrochloric acid.
  • the device 10 Since this must be done briefly and very evenly, the device 10 according to the invention is to be used.
  • An 18% hydrochloric acid with a temperature of 50 ° C is used as the liquid.
  • a container 12 For the substrate having the total thickness of 1.5 mm, a container 12 is used, the through-slots 14 and 16 of which are approximately 3 mm thick.
  • the cadmium sulfide layer is then transported through the container 12 in such a way that it points in the direction of the bottom of the container 12.
  • the distance between the slots 14 and 16 is chosen to be 4 cm.
  • the substrate 18 is then received by a holding device 36, as shown in FIG. 2. With the aid of this holding device 36, the substrate 18 is guided through the slots 14 and 16 and through the liquid.
  • the plate is transported through the liquid in about 15 seconds.
  • section 38 of line 22 ends approximately 2 cm below the transport plane of substrate 18.
  • Section 38 has an approximately 30 cm wide slot nozzle at its end, the slots being approximately 1 mm long are. This selection of the slit nozzle ensures that the surface of the cadmium sulfide is evenly swollen by the aqueous hydrochloric acid. Subsequently, the substrate 18 is transported further in the same way by a corresponding device 10, but in which, instead of the etching solution, deionized water is present for rinsing.
  • the cadmium ions in the upper boundary layer of the cadmium sulfide must be exchanged for copper ions in a wet chemical exchange process.
  • the substrate with a structured cadmium sulfide surface specified in Example 1 can be transported through a device 10 in which there is a hydrochloric acid-copper chloride solution.
  • the dimensions in terms of slot width, slot length, liquid level and distance between the slot nozzle and the lower surface of the substrate can have the same values as in Example 1.
  • the device for chemical conversion is located behind the device in which the cadmium sulfide surface has been rinsed with deionized water, so that the treatment of the substrate can be carried out continuously by passing through devices in accordance with the teaching of the invention arranged in a line.
  • the speed of the substrate itself does not need to be changed if the reaction time is to be increased or decreased. Rather, in this case it is only necessary to change the distance within the respective container.
  • the longer reaction time required for the exchange of cadmium ions by copper ions can be achieved by choosing the depth of the container 12 in the transport direction 6 cm, whereas this was 4 cm in the example 1.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)

Claims (8)

1°) Dispositif (10) pour le traitement d'un mince substrat (18) avec du liquide, comportant un récipient (12), de préférence rectangulaire en coupe, ouvert du côté de la tête et ferme du côté du fond, récipient qui présente, sur deux parois opposées, des fentes de passage (14,16) pour le guidage horizontal ou à peu près horizontal du substrat (18) dans le liquide et qui est monté dans un réservoir de trop-plein (20), duquel part une première conduite (22) pourvue d'un agrégat de transport (30) et dont l'extrémité libre (38) débouche dans le récipient au-dessous du substrat, dispositif caractérisé en ce que, pour régler la pression agissant sur le substrat (18) sous l'effet du liquide, l'extrémité libre (38) de la conduite (22) est dirigée sur la face inférieure du substrat (18), en ce que pour contrôler la quantité de liquide fournie dans la zone du récipient au-dessus du substrat une seconde liaison (32) est prévue entre le réservoir de trop-plein (20) et le récipient (12), en ce qu'au-dessous du substrat (18) part du récipient une conduite montante (36) qui est reliée au récipient au-dessus du substrat, et en ce que du récipient au-dessus du substrat part une conduite de trop-plein (28) déterminant le niveau du liquide.
2°) Dispositif selon la revendication 1, caractérisé en ce que la seconde conduite (32) est dérivée de la première conduite (22) après l'agrégat de transport (30) et comporte un étranglement (34).
3°) Dispositif selon la revendication 1, caractérisé en ce que le récipient (12) est relié, par l'intermédiaire de la conduite de trop-plein (28) dans laquelle débouche la conduite montante (36), à un réservoir de liquide (26) qui est en liaison du côté du fond avec le réservoir de trop-plein (20).
4°) Dispositif selon la revendication 1, caractérisé en ce que la conduite (38) délivrant la proportion de liquide sur la face inférieure du substrat (18) est munie d'une buse à fente en vue de la répartition uniforme de cette proportion de liquide sur le substrat.
5°) Dispositif selon la revendication 1, caractérisé en ce que le substrat (18) est reçu par un dispositif (36) qui passe par les fentes (14; 16) et est constitué, de préférence, par deux rails (42, 44) recevant les bords latéraux (38,40) du substrat et présentant des évidements (46, 48) en forme de V situés en regard l'un de l'autre, s'étendant en direction longitudinale du dispositif.
6°) Dispositif selon la revendication 1, caractérisé en ce que te récipient (12) est entouré dans la zone des fentes (14,16) par des buses (50, 52, 54, 56) délivrant, de préférence, du gaz inerte sur le substrat (18) passant par les fentes.
7°) Procédé de traitement, par exemple pour humidification, lavage, dégraissage, enduction, décapage ou transformation chimique d'au moins une surface d'un mince substrat (18), un guidage horizontal ou à peu près horizontal du substrat (18) s'effectuant à travers le liquide au-dessous de la surface de celui-ci, procédé caractérisé par les phases opératoires:
a) aspersion de la face inférieure du substrat (18) par une fraction du liquide, et
b) réglage de la pression au-dessus et au-dessous du substrat (18) dans une mesure telle, qu'il ne s'exerce pas sur le substrat (18) de différence de pression provoquant une déformation mécanique.
8°) Procédé selon la revendication 7, caractérisé en ce que la pression hydrostatique causée par la colonne de liquide au-dessus du substrat (18) est égale ou à peu près égale à la pression agissant sur la face inférieure du substrat (18), pression qui est déterminée en même temps qu'est contrôlée à partir du liquide la fraction de celui-ci qui vient passer sur la face inférieure du substrat (18).
EP19840108901 1983-08-01 1984-07-27 Dispositif pour traiter un substrat mince avec du liquide dans le procédé de passage continu Expired EP0133304B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19833327753 DE3327753C1 (de) 1983-08-01 1983-08-01 Vorrichtung und Verfahren zum Behandeln von duennem Substrat mit Fluessigkeit im Durchlaufverfahren
DE3327753 1983-08-01

Publications (2)

Publication Number Publication Date
EP0133304A1 EP0133304A1 (fr) 1985-02-20
EP0133304B1 true EP0133304B1 (fr) 1987-04-29

Family

ID=6205492

Family Applications (1)

Application Number Title Priority Date Filing Date
EP19840108901 Expired EP0133304B1 (fr) 1983-08-01 1984-07-27 Dispositif pour traiter un substrat mince avec du liquide dans le procédé de passage continu

Country Status (2)

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EP (1) EP0133304B1 (fr)
DE (1) DE3327753C1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4121079A1 (de) * 1991-06-26 1993-01-07 Schmid Gmbh & Co Geb Vorrichtung zum behandeln von plattenfoermigen gegenstaenden

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2629272B1 (fr) * 1988-03-22 1990-11-09 Bull Sa Support de circuit integre de haute densite et appareil d'etamage selectif des conducteurs du support
WO1996026052A1 (fr) * 1995-02-24 1996-08-29 New Zealand Forest Research Institute Limited Appareil pour le traitement d'un materiau

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1771934A1 (de) * 1968-08-01 1972-01-05 Moehl & Co Kg Anlage zum Beizen von Draehten,Baendern od.dgl.
DE2102678C3 (de) * 1971-01-21 1975-05-15 Robert Bosch Gmbh, 7000 Stuttgart Einrichtung zum Aufbringen von feinen Teilchen aus einem Aerosol
DE2337280A1 (de) * 1973-07-23 1975-02-13 Gogas Goch & Co Reinigungsbad fuer plattenfoermige erzeugnisse
CA1114770A (fr) * 1979-07-18 1981-12-22 Anthony J. Last Traitement des tissus aux ultrasons
DE3001726C2 (de) * 1980-01-18 1984-08-09 Gebr. Schmid GmbH & Co, 7290 Freudenstadt Vorrichtung zum Behandeln einer Leiterplatte

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4121079A1 (de) * 1991-06-26 1993-01-07 Schmid Gmbh & Co Geb Vorrichtung zum behandeln von plattenfoermigen gegenstaenden

Also Published As

Publication number Publication date
DE3327753C1 (de) 1985-05-09
EP0133304A1 (fr) 1985-02-20

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