EP0188401A2 - Referenzspannungsquelle - Google Patents

Referenzspannungsquelle Download PDF

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Publication number
EP0188401A2
EP0188401A2 EP86810010A EP86810010A EP0188401A2 EP 0188401 A2 EP0188401 A2 EP 0188401A2 EP 86810010 A EP86810010 A EP 86810010A EP 86810010 A EP86810010 A EP 86810010A EP 0188401 A2 EP0188401 A2 EP 0188401A2
Authority
EP
European Patent Office
Prior art keywords
compatible bipolar
reference voltage
bipolar transistor
compatible
voltage source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP86810010A
Other languages
English (en)
French (fr)
Other versions
EP0188401B1 (de
EP0188401A3 (en
Inventor
Marc Degrauwe
Eric A. Vittoz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre Electronique Horloger SA
Original Assignee
Centre Electronique Horloger SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre Electronique Horloger SA filed Critical Centre Electronique Horloger SA
Publication of EP0188401A2 publication Critical patent/EP0188401A2/de
Publication of EP0188401A3 publication Critical patent/EP0188401A3/fr
Application granted granted Critical
Publication of EP0188401B1 publication Critical patent/EP0188401B1/de
Expired legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/30—Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities

Definitions

  • the present invention relates to circuits that can serve as reference voltage sources and relates more particularly to voltage sources referring to the band gap and compatible with MOS technologies.
  • CMOS complementary MOS
  • circuits with an analog part require the creation of a block delivering a reference voltage.
  • Such blocks have already been proposed in CMOS technology and are most often derived from circuits known in bipolar technology under the name of band gap references.
  • These circuits use a pair of transistors working at different current densities and which, while having a bipolar operating characteristic, are compatible with CMOS technology.
  • Such transistors also called transistors to the substrate, always have their collector connected to the substrate, which limits their application, in particular when it is desired to adapt the circuits which have been developed in bipolar technology.
  • an object of the present invention is a circuit that can serve as a reference voltage source and does not have the drawbacks mentioned above.
  • Another object of the invention is a reference voltage source compatible with MOS technology and using compatible bipolar transistors.
  • Another object of the invention is a reference voltage source whose temperature dependence can be easily compensated.
  • Another object of the invention is a reference voltage source having a low output impedance.
  • the circuit of the invention has the property of allowing the adjustment of its temperature coefficient by adjusting the circuit to a given temperature while, for circuits known in CMOS technology, the two effects are not correlated.
  • FIG. 1 illustrates the principle of the invention.
  • Two compatible bipolar transistors as described in the aforementioned patent application, work at different current densities.
  • the bases are connected via a resistor 3, and the transmitters are connected to the negative supply terminal 7 of the circuit.
  • the collectors of T1 and T2, traversed by the currents I1 and 12 respectively, are connected to the inputs 8 and 9, respectively the inverse input and the direct input, of a transresistance amplifier 1.
  • the output of the amplifier 1 is connected on the one hand to the output terminal 5 and on the other hand to the base of the transistor T1 through the resistor 2.
  • the base of the transistor T2 is still connected to the terminal 7 via a conductive block 4 intended to draw, through the resistor 3, a very large current 13 in front of the currents I1 and 12.
  • V S represents the output voltage of the amplifier
  • K1 is the ratio of the gain of input 9 to that of input 8.
  • Y BE1 is the base-emitter voltage of T1
  • R2 and R1 are the values of the resistors 2 and 3 respectively
  • k is the Boltzmann constant
  • T is the absolute temperature
  • q is the elementary charge of the electron
  • K1 has the previously defined value
  • K2 is the ratio of the effective emitter areas of transistor T2 to transistor T1.
  • the two bipolar transistors compatible T1 and T2 must work at different current densities; that passing through transistor T2 must be less than that passing through transistor T1.
  • K1 the currents 11 and 12 may be equal, while in the second case, they will be in the ratio K1.
  • the transistors T1 and T2 are compatible bipolar transistors as described in the aforementioned patent application. Such transistors have a poorly defined gain in current which is difficult to reproduce from one integration to another. For the relation (1) to be verified despite the use of compatible bipolar transistors, it is necessary that the value of the current 13, drawn by the block 4 through the resistor 3, is large compared to that of the current 11.
  • FIG. 3 A first exemplary embodiment is shown in FIG. 3, in which the elements identical to those of FIG. 1 have the same references.
  • the amplifier 1 is essentially constituted by a current mirror and a voltage follower stage.
  • the current mirror is formed by the P-channel MOS transistors 11 and 12, connected to the positive supply terminal V DD .
  • the transistor 11 has its drain connected to the branch 9 as well as to the gates of the transistors 11 and 12.
  • the drain of the transistor 12 is connected to the branch 8 as well as to the gate of the N-channel MOS transistor 13, mounted in stages voltage follower between the supply terminal V DD and the terminal 5.
  • the transistors T1 and T2 are identical and the current mirror is of ratio K1, so that the currents passing through the transistors T1 and T2 are in the same ratio.
  • the conductive block 4 is constituted by a compatible bipolar transistor 41 whose emitter is connected to terminal 7 and the base and the collector are connected to point 6, common to the base of T2 and to resistor 3. To ensure the inequality I3 I I1, it is important that the transistor 41 is dimensioned so that its effective emitter surface is significantly larger than that of the transistor T1.
  • FIG. 5 Another embodiment of the transresistance amplifier 1 is shown in FIG. 5.
  • a current mirror formed by the P channel MOS transistors 101 and 102 on the one hand and 103 and 104 on the other hand, is connected in series between the positive supply terminal V DD and the branches 8 and 9.
  • the two transistors 101 and 103 are mounted as a diode and all of the transistors 101 to 104 have a ratio K1.
  • the P channel transistors 105 and 106 form a voltage follower stage.
  • Transistor 105 has its gate connected to the gate of transistors 101 and 102, its source connected to terminal V DD and its drain connected to the source of transistor 106, whose gate is connected to the drain of transistor 104 and whose drain is connected to the negative supply terminal 7 of the circuit.
  • Point 108 common to the drain of transistor 105 and to the source of transistor 106, is connected to the base of a compatible bipolar transistor 107 whose collector is connected to terminal V DD and whose emitter is connected to terminal 5.
  • the mounting of the four transistors 101 to 104 makes it possible to reduce the effects of a variation of the supply voltage on the value of the ratio of the currents I1 and 12, and therefore on the precision of 1 4 reference voltage V ref .
  • the output transistor 13 of the assembly of FIG. 3 has been replaced, in FIG. 5, by a compatible bipolar transistor 107 associated with a voltage follower stage constituted by the transistors 105 and 106. This arrangement of the transistors 105 to 107 reduces the output resistance of the circuit and therefore to supply additional circuits from the reference voltage circuit.
  • FIG. 6 shows yet another exemplary embodiment of the amplifier 1.
  • the output of amplifier 110 is connected to terminal 5.
  • a diagram such as that of FIG. 6 is known per se and can, for example, be found in the article by Carl R. Palmer et al, entitled “A curvature corrected micropower voltage reference" published in IEEE International Solid-State Circuits Conference of 1981.
  • the reference voltage Y ref delivered by the previous circuits is well defined and close to 1.2 volts. It is sometimes desirable to be able to have a reference voltage greater than this value.
  • the circuit of FIG. 7 shows how to obtain a voltage greater than the voltage V ref from the circuit of the invention without degrading the performance thereof. Elements identical to those in FIG. 1 have the same references.
  • the output of the transresistance amplifier 1 is connected to a voltage divider 200 whose output is applied through a voltage follower stage 210 to the resistor 2.
  • the voltage divider 200 can be a potentiometer delivering a fraction l of the output voltage of amplifier 1.
  • the output voltage of follower stage 210 is always equal to V ref , while the output voltage of amplifier 1 is:
  • the voltage follower stage 210 must have an "offset" voltage as low as possible and, preferably, proportional to the absolute temperature.
  • the circuit also includes a MOS transistor 214 whose gate is connected to the point common to the drain of transistor 212 and to the collector of transistor 215, whose drain is connected to the supply terminal V DD and whose source is connected to the base. of transistor 215.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Amplifiers (AREA)
  • Control Of Electrical Variables (AREA)
EP86810010A 1985-01-17 1986-01-13 Referenzspannungsquelle Expired EP0188401B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CH203/85A CH661600A5 (fr) 1985-01-17 1985-01-17 Source de tension de reference.
CH203/85 1985-01-17

Publications (3)

Publication Number Publication Date
EP0188401A2 true EP0188401A2 (de) 1986-07-23
EP0188401A3 EP0188401A3 (en) 1986-09-10
EP0188401B1 EP0188401B1 (de) 1989-06-14

Family

ID=4181600

Family Applications (1)

Application Number Title Priority Date Filing Date
EP86810010A Expired EP0188401B1 (de) 1985-01-17 1986-01-13 Referenzspannungsquelle

Country Status (5)

Country Link
US (1) US4672304A (de)
EP (1) EP0188401B1 (de)
JP (1) JPH0625956B2 (de)
CH (1) CH661600A5 (de)
DE (1) DE3664010D1 (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0352044A1 (de) * 1988-07-18 1990-01-24 General Electric Company Kompensierungsstromkreis für Transistorbasisstrom
EP2977849A1 (de) * 2014-07-24 2016-01-27 Dialog Semiconductor GmbH Hochspannungs- zu Niederspannungsregler mit niedrigem Spannungsverlust mit autarker Spannungsreferenz

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4849684A (en) * 1988-11-07 1989-07-18 American Telephone And Telegraph Company, At&T Bell Laaboratories CMOS bandgap voltage reference apparatus and method
US4943945A (en) * 1989-06-13 1990-07-24 International Business Machines Corporation Reference voltage generator for precharging bit lines of a transistor memory
US5132556A (en) * 1989-11-17 1992-07-21 Samsung Semiconductor, Inc. Bandgap voltage reference using bipolar parasitic transistors and mosfet's in the current source
JP2634685B2 (ja) * 1990-07-24 1997-07-30 シャープ株式会社 半導体装置の電圧降下回路
US5319303A (en) * 1992-02-12 1994-06-07 Sony/Tektronix Corporation Current source circuit
US6642699B1 (en) 2002-04-29 2003-11-04 Ami Semiconductor, Inc. Bandgap voltage reference using differential pairs to perform temperature curvature compensation
US7524108B2 (en) * 2003-05-20 2009-04-28 Toshiba American Electronic Components, Inc. Thermal sensing circuits using bandgap voltage reference generators without trimming circuitry
US7857510B2 (en) * 2003-11-08 2010-12-28 Carl F Liepold Temperature sensing circuit
US20050099163A1 (en) * 2003-11-08 2005-05-12 Andigilog, Inc. Temperature manager
US7389720B2 (en) * 2003-12-30 2008-06-24 Haverstock Thomas B Coffee infusion press for stackable cups
US7211993B2 (en) * 2004-01-13 2007-05-01 Analog Devices, Inc. Low offset bandgap voltage reference
EP1812842A2 (de) * 2004-11-11 2007-08-01 Koninklijke Philips Electronics N.V. Ptat-stromquelle für einen ganz-npn-transistor
US7688054B2 (en) 2006-06-02 2010-03-30 David Cave Bandgap circuit with temperature correction
JP2009145070A (ja) * 2007-12-11 2009-07-02 Nec Electronics Corp 温度センサ回路

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH648434A5 (fr) * 1982-04-23 1985-03-15 Centre Electron Horloger Dispositif semiconducteur presentant une caracteristique de fonctionnement d'un transistor bipolaire et circuit m0s incorporant un tel dispositif.

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0352044A1 (de) * 1988-07-18 1990-01-24 General Electric Company Kompensierungsstromkreis für Transistorbasisstrom
EP2977849A1 (de) * 2014-07-24 2016-01-27 Dialog Semiconductor GmbH Hochspannungs- zu Niederspannungsregler mit niedrigem Spannungsverlust mit autarker Spannungsreferenz
US9594391B2 (en) 2014-07-24 2017-03-14 Dialog Semiconductor (Uk) Limited High-voltage to low-voltage low dropout regulator with self contained voltage reference

Also Published As

Publication number Publication date
CH661600A5 (fr) 1987-07-31
JPH0625956B2 (ja) 1994-04-06
JPS61169920A (ja) 1986-07-31
EP0188401B1 (de) 1989-06-14
US4672304A (en) 1987-06-09
EP0188401A3 (en) 1986-09-10
DE3664010D1 (en) 1989-07-20

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