EP0189462A1 - Optische speicherungsstruktur - Google Patents
Optische speicherungsstrukturInfo
- Publication number
- EP0189462A1 EP0189462A1 EP85903608A EP85903608A EP0189462A1 EP 0189462 A1 EP0189462 A1 EP 0189462A1 EP 85903608 A EP85903608 A EP 85903608A EP 85903608 A EP85903608 A EP 85903608A EP 0189462 A1 EP0189462 A1 EP 0189462A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- layer
- active layer
- recording structure
- optical recording
- nickel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 27
- 238000003860 storage Methods 0.000 title abstract description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 26
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 16
- 239000000956 alloy Substances 0.000 claims abstract description 16
- 150000004770 chalcogenides Chemical class 0.000 claims abstract description 13
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims abstract description 10
- 239000002184 metal Substances 0.000 claims abstract description 10
- 239000011159 matrix material Substances 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 12
- 238000000151 deposition Methods 0.000 claims description 11
- 230000005855 radiation Effects 0.000 claims description 10
- 239000011669 selenium Substances 0.000 claims description 8
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 5
- 229910052785 arsenic Inorganic materials 0.000 claims description 5
- 229910052711 selenium Inorganic materials 0.000 claims description 5
- 229910052714 tellurium Inorganic materials 0.000 claims description 5
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 4
- 230000006872 improvement Effects 0.000 claims description 4
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 4
- 238000000034 method Methods 0.000 claims 3
- 230000000694 effects Effects 0.000 description 10
- 239000000758 substrate Substances 0.000 description 8
- 239000000428 dust Substances 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 6
- 229920000058 polyacrylate Polymers 0.000 description 6
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 4
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 101100421135 Caenorhabditis elegans sel-5 gene Proteins 0.000 description 3
- 229910001215 Te alloy Inorganic materials 0.000 description 3
- 238000005054 agglomeration Methods 0.000 description 3
- 230000002776 aggregation Effects 0.000 description 3
- 230000001066 destructive effect Effects 0.000 description 3
- 230000009477 glass transition Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 238000005275 alloying Methods 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910000967 As alloy Inorganic materials 0.000 description 1
- 238000012935 Averaging Methods 0.000 description 1
- 208000023514 Barrett esophagus Diseases 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 102100022022 Protein adenylyltransferase SelO, mitochondrial Human genes 0.000 description 1
- 101710093368 Protein adenylyltransferase SelO, mitochondrial Proteins 0.000 description 1
- 229910001370 Se alloy Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 150000002500 ions Chemical group 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229940102838 methylmethacrylate Drugs 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 230000031070 response to heat Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/258—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24316—Metals or metalloids group 16 elements (i.e. chalcogenides, Se, Te)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
- G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
- G11B2007/25706—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing transition metal elements (Zn, Fe, Co, Ni, Pt)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
- G11B7/2572—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of organic materials
Definitions
- This invention relates to optical storage devices of the type comprising a rotatable disk having an active structure enabling variation of optical properties by means of focused write radiation, such as a laser beam, and reading data stored thereon by means of focused read radiation beam.
- focused write radiation such as a laser beam
- Tuned structures of the above type have a good signal to noise ratio, good sensitivity, and otherwise good performance. ; It has been found, however, that the recording medium may produce unstable reflectance upon exposure to various sources of heat. Such sources may include over- exposure, the heat of an ultraviolet lamp employed to cure the defocusing layer, and repeated exposure to the read beam, which may occur for
- optical storage device One form of optical storage device, in
- the surface of the substrate disk 10 conventionally has small imperfections, micro irregularities, tooling marks, polishing streaks, etc., which are undesirable for the optical properties of the recording media, and in order to remove these imperfections, a planarizing layer 11 is preferably provided on at least one surface of the substrate.
- the planarizing layer may have a thickness of for example 2 to 25 micrometers and may comprise an acrylic layer solvent coated by
- the surface of this layer should have a micro roughness less than 5 nanometers, and may be aluminized for this purpose.
- planar active layer also serves to prevent corrosion of the substrate, as well as to provide a chemical barrier between residual substrate contamination and the three layer structure of the phase layer, active layer and matrix layer described in the following paragraphs.
- the planarizing layer has been comprised of Rohm and Haas Acryloid A-10.
- This material is a solvent base methyl- methacrylate thermoplastic resin in a Cellosolve acetate having a viscosity of 800 to 1200 cps (Brookfield 25 degrees C), 30% plus or minus 1% percent solid, a density of 8.6 lbs. per gallon and a glass transition temperature of the polymer -8-
- the Acryloid A-10 resin was dissolved in a solution of Cellosolve acetate and butyl acetate with a final solvent ratio of 9:1, Cellosolve acetate to butyl acetate.
- the Cello ⁇ solve acetate was Urethane grade (boiling point of 156.2 degrees C), and the butyl acetate was spectral grade (boiling point of 126.5 degrees C).
- the butyl acetate may be substituted by Cellosolve acetate.
- the solution has a solid content of 22%, and a viscosity of 133 cps (Brookfield at 21 degrees C), filtered to 0.2 micrometers.
- the planarizing layer provides a base for the reflecting layer 12.
- the reflecting layer is preferably of aluminum, although copper or silver may be alternatively employed. A thickness of about 100 nanometers is preferred, although this dimension is not critical. It must be highly reflective at the read, write and coarse seek wavelengths employed, for example 633, 830 and 780 nanometers reflectively. The reflectivity should be equal to or greater than 0.85 in air, at these wavelengths.
- the reflective layer 12 is preferably formed by sputtering onto the planarizing layer, for example employing a Leybold-Heraeus in-line vacuum deposition system.
- the invention herein is not limited to the above structure wherein the reflective layer is formed on a planarizing layer, and other suitable tech ⁇ niques for forming a reflective surface of the required planarity, supported by the substrate, may be employed.
- the next three layers, defining a three- layer structure are comprised of a phase layer 13 on the reflective layer, an active layer 14 on the phase layer and a matrix layer 15 on the active layer.
- the phase layer and matrix layer may be of a plasma polymerized fluorocarbon with a fluorine to carbon atomic ratio of (for example only) 1.8.
- the active layer is preferably STC-68 tellurium alloy (Te 65 Se 2Q As.. Ni, Q ).
- a write beam for example a laser beam
- the optical energy of the beam is dissipated as thermal energy in the active layer, whereby the active layer agglomerates within the fluorocarbon phase and matrix layer.
- This agglomeration affects the optical transmittance of the three layer structure in accordance with the signal modulation of the write beam.
- the active layer absorbs energy to a different extent in the written and unwritten areas, to develop a reflective contrast.
- the active layer is a thin layer having discrete island-like globules.
- the layer therefore has irregular or discontinuous upper and lower surface characteristics defined by the globular surfaces.
- the mass equivalent average thickness of the active layer is thus about 7 to 8 nanometers.
- the globules denote discrete particles of dimension averaging within the range of 1 to 8 nanometers. It must be stable chemically, optically and in atomic structure. It has an amorphous lattice structure, with a glass transition temperature greater than 80 degrees C.
- the matrix " layer 15 may have a thickness of, for example, 270 nanometers.
- An adhesion layer 16 is provided on the matrix layer.
- the adhesion layer in addition to providing the proper surface energy for the
- the outer layer 17 of the structure is a defocussing layer, which serves to optically defocus dirt and dust particles and the like which have come to rest thereon.
- the defocusing effect prevents interference with the optical structures formed in the active layer, in writing and reading data, and in the optical seeking operations.
- the critical properties of the defocussing layer are that it be sufficiently thick to defocus dust particles that lay on the surface of the disk. In this sense, it is desirable that the layer be set to have, for example, a working thickness of about one millimeter, or one thousand nanometers.
- the layer is cured in ultraviolet light for a time less than 60 seconds, the curing being effective before removal of the coated disk from the deposition apparatus.
- the uniformity of exposure of the layer to ultraviolet curing light must be better than 90 percent, since uniformity is needed not just for an even cure, but also so that any change induced in the media is uniform.
- the intensity of the curing light at the disk surface must be 25 milliwatts per centimeter or greater, preferably with the spectral intensity
- An optical storage structure as above described in the form of a disk of about 14 inches diameter, is adapted to be rotated at a rate of for example, about 1300 rp .
- Writing of data on the disk is effected by a laser beam, at the write frequency, with a diameter of 0.5 plus or minus 0.05 nanometers, the beam having a write power equal to or less then 16 milliwatts.
- the reading photodetectors are adapted to read spot sizes of about 0.75 nanometers.
- a strip of nickel was overlayed on a larger sputtering target of the composition Te65, Se20, As5, so that the nickel and tellurium alloy were cosputtered by an argon ion beam by a secondary ion arrangement.
- a single target can be made as an intermixture or conglomerate of aluminum along with Te, Se and As, in a relatively homogeneous structure.
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US62869784A | 1984-07-06 | 1984-07-06 | |
| US628697 | 1984-07-06 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| EP0189462A1 true EP0189462A1 (de) | 1986-08-06 |
Family
ID=24519947
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP85903608A Withdrawn EP0189462A1 (de) | 1984-07-06 | 1985-07-03 | Optische speicherungsstruktur |
Country Status (2)
| Country | Link |
|---|---|
| EP (1) | EP0189462A1 (de) |
| WO (1) | WO1986000744A1 (de) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4857373A (en) * | 1987-03-31 | 1989-08-15 | E. I. Du Pont De Nemours And Company | Optical recording element |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5766996A (en) * | 1980-10-15 | 1982-04-23 | Hitachi Ltd | Information recording member and method of preparing thereof |
| US4425570A (en) * | 1981-06-12 | 1984-01-10 | Rca Corporation | Reversible recording medium and information record |
| WO1984004824A1 (en) * | 1983-05-31 | 1984-12-06 | Storage Technology Corp | Optical recording structure involving in situ chemical reaction in the active structure |
-
1985
- 1985-07-03 WO PCT/US1985/001284 patent/WO1986000744A1/en not_active Ceased
- 1985-07-03 EP EP85903608A patent/EP0189462A1/de not_active Withdrawn
Non-Patent Citations (1)
| Title |
|---|
| See references of WO8600744A1 * |
Also Published As
| Publication number | Publication date |
|---|---|
| WO1986000744A1 (en) | 1986-01-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
| AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): DE FR GB NL |
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| STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
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| 18D | Application deemed to be withdrawn |
Effective date: 19860607 |
|
| RIN1 | Information on inventor provided before grant (corrected) |
Inventor name: MUCHNIK, BORIS, J. Inventor name: SPONG, FRED, W. Inventor name: REVAY, ROBERT, E. |