EP0251681A2 - Fabrication de circuits intégrés utilisant des techniques holographiques - Google Patents

Fabrication de circuits intégrés utilisant des techniques holographiques Download PDF

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Publication number
EP0251681A2
EP0251681A2 EP87305626A EP87305626A EP0251681A2 EP 0251681 A2 EP0251681 A2 EP 0251681A2 EP 87305626 A EP87305626 A EP 87305626A EP 87305626 A EP87305626 A EP 87305626A EP 0251681 A2 EP0251681 A2 EP 0251681A2
Authority
EP
European Patent Office
Prior art keywords
reference beam
image
holographic
hologram
interference
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP87305626A
Other languages
German (de)
English (en)
Other versions
EP0251681A3 (fr
Inventor
Nicholas John Phillips
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Holtronic Technologies Ltd
Original Assignee
Holtronic Technologies Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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Application filed by Holtronic Technologies Ltd filed Critical Holtronic Technologies Ltd
Publication of EP0251681A2 publication Critical patent/EP0251681A2/fr
Publication of EP0251681A3 publication Critical patent/EP0251681A3/fr
Withdrawn legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70408—Interferometric lithography; Holographic lithography; Self-imaging lithography, e.g. utilizing the Talbot effect
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03H—HOLOGRAPHIC PROCESSES OR APPARATUS
    • G03H1/00—Holographic processes or apparatus using light, infrared or ultraviolet waves for obtaining holograms or for obtaining an image from them; Details peculiar thereto
    • G03H1/0005—Adaptation of holography to specific applications
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03H—HOLOGRAPHIC PROCESSES OR APPARATUS
    • G03H1/00—Holographic processes or apparatus using light, infrared or ultraviolet waves for obtaining holograms or for obtaining an image from them; Details peculiar thereto
    • G03H1/04—Processes or apparatus for producing holograms
    • G03H1/0402—Recording geometries or arrangements
    • G03H1/0408—Total internal reflection [TIR] holograms, e.g. edge lit or substrate mode holograms
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2042—Photolithographic processes using lasers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03H—HOLOGRAPHIC PROCESSES OR APPARATUS
    • G03H1/00—Holographic processes or apparatus using light, infrared or ultraviolet waves for obtaining holograms or for obtaining an image from them; Details peculiar thereto
    • G03H1/0005—Adaptation of holography to specific applications
    • G03H2001/0094—Adaptation of holography to specific applications for patterning or machining using the holobject as input light distribution

Definitions

  • the present invention relates to the manufacture of integrated circuits using holographic techniques.
  • Integrated circuits are built in layers, by repeatedly coating silicon wafers with photo-sensitive chemicals, flooding the wafers with a flash of light through a negative image of the circuit pattern, called a mask, and then developing that image and covering the microscopic circuit lines with a thin layer of a metal conductor.
  • a mask a negative image of the circuit pattern
  • a more sophisticated projection technique was used.
  • the apparatus uses mirrors to focus the image of the mask onto the wafer, and also avoids the need for direct handling and contact with the wafer.
  • stepper system had some advantages in that during the reduction of the mask image, the flaws on the mask were also reduced, with increasing reduction in size of the integrated circuit lines, serious problems arise and specks of dust, minute scratches or fingerprints can result in defective chips.
  • X-ray aligners work like conventional projection gear, but they transmit X-rays, not light through the mask. Since the wavelength of X-­rays is considerably smaller than that of light, they can define finer circuit geometries. However, the necessary chemicals needed to record the image are not readily available at a reasonable cost and moreover special masks are required since they have to be capable of stopping X-­rays, these special masks being both fragile and expensive.
  • X-ray systems and electron-beam systems do have specific advantages over the optical systems, they do have their limitations.
  • one advantage of the X-ray system is that high resolution can be achieved due to the short wavelength utilized and another is that it is insensitive to soft defects, a new resist system will be required and X-rays are sensitive to proximity effects.
  • it will require “stepper" processing with all the problems of throughput and mechanical positioning associated with todays systems.
  • X-ray masks will also require a new mask technology due to the necessity for special mask substrates and gold metallizing.
  • Lasers provide coherent light of a given wavelength, whereas ordinary light is "incoherent" being made up usually of a range of wavelengths from the infra-red to the ultra-violet, the light being of random phase.
  • FIG. 1 of the accompanying drawings diagrammatically illustrates the mechanism used to establish a reference beam which is totally reflected at the air emulsion boundary.
  • the recording medium in which the hologram H is to be formed is placed against the surface of a prism P with oil between the glass surfaces in order to allow the collimated reference beam to pass through a first glass slab.
  • the object O to be holographically recorded is provided on a second glass slab and is spaced apart from the first glass slab by means of spacers Q.
  • R is the reference beam and S is the subject beam.
  • the subject beam S enters the hologram plate nearly normal to its surface and passes out through the small face of the prism P.
  • the layer of oil between the prism P and the first glass slab on which the hologram H is to be formed permits the transmission of light through this interface.
  • the reference beam R enters one of the side faces of the prism P nearly normal to its surface and by interference both before and after reflection with the subject beam S forms the hologram H in the emulsion on the upper surface of the first glass slab.
  • the recording of the hologram was not a "contact print", but did in fact reconstruct a wavefront.
  • the subject beam S was actually a spherical diverging beam and upon reconstruction via the conjugate of the reference beam, the conjugate of the subject beam converged to a focus at a distance equal to the radius of the original subject beam. With white light reconstruction a spectrum of colours was observed at the focal point which indicated the diffracted nature of the reconstruction.
  • the hologram itself showed an order of magnitude less resolution than the reconstruction.
  • the reconstruction was a positive image of the object, not a negative image as was the hologram, i.e. the dark areas on the hologram became bright areas upon reconstruction and vice versa.
  • Total internal reflection holograms are holograms which are made with either or both the subject and reference beams totally reflected from the air/emulsion surface of the hologram plate. When the reference beam is totally reflected and the subject beam is normally transmitted, it is possible to locate transparent objects very close to the hologram without obstructing the reference beam.
  • K.A. Stetson concludes that the total internal reflection holograms are capable of producing images with a resolution comparable to high quality microscope lenses.
  • the limiting factor in the image degradation of the total internal reflection holograms is the coherent background of scattered light from the photographic emulsion that gives a noisy quality to the images.
  • a method of manufacturing semiconductor components by the use of known holograms in conjunction with photo-etching techniques is disclosed in British Patent Specification No. 1,331, 076.
  • the invention is specifically directed to a method which facilitates the adjustment of the hologram used, or of the real image of the etching mask reconstructed from the hologram, with the etching pattern already located on the basic body.
  • the body of semiconductor material is coated with a photo lacquer and exposed to produce an etching pattern before each processing step.
  • Each etching pattern is projected from a respective hologram.
  • the hologram used for the production of the first etching mask has three adjusting marks recorded therein, the projections of which are imaged on the body to provide reference marks to facilitate resetting during the projection of each subsequent hologram.
  • the reference marks remain on the surface of the body as reflective areas. The real images of the adjusting marks are reconstructed and brought into coincidence with respective reference marks. Such a technique is slow, tedious and not very accurate, as well as being rather costly.
  • the second reference beam may either be a separate source or the same source whose direction is reversed. In the case where the same reference source is used both may be derived from the same laser source. However, where a separate second reference source is used for the replay, this need not be a laser source, but could be a source in which a strong spectral line is used, and the method would then include the additional step of filtering out the unwanted radiation on either side of the spectral line.
  • a mercury lamp could be used as the second reference source for the replay step (c) referred to above.
  • an additional step of moving the silicon slice vertically during exposure is provided.
  • Such vertical movement of the silicon slice is preferably achieved by providing a piezo-electric spacer whose thickness is varied by the application of a voltage.
  • the apparatus comprises an apex mirror 10; an expansion lens 12; a pinhole filter 13; a collimating lens 14; a glass slab 16 on which a recording emulsion is coated to enable a volume hologram to be formed; a mask 18 positioned above the glass slab 16; spacers 20 which separate the mask 18 from the glass slab 16; and a prism 22.
  • a volume hologram is one which exhibits its image forming properties from the volume of the material of the hologram, as distinct from surface relief holograms.
  • the refractive index of the prism is the same as the glass slab 16.
  • the mask 18 carries a mask window 19 on which the object, for example in the form of an integrated circuit to be reproduced, is encoded.
  • the laser sources 24 and 25 are the same source, which is split for convenience. However, it is perfectly possible to use two separate laser sources if the frequencies are synchronized.
  • An input beam S (the subject beam referred to hereinabove) is a beam of coherent light generated by a laser source 24.
  • a reference beam R is another laser beam generated by a separate source 25 through a collimating lens 27. In order that the beam is adequately uniform in intensity across its section, anti-­ gaussian devices would be incorporated in the primary beam from the lasers 24 and 25.
  • the reference beamR is projected substantially normal to one of the shorter faces Z of the prism 22. It passes through the junction between the glass slab 16 and the longest face X of the prism 22. It is internally reflected by the upper face of the glass slab 16 and exits through the other shorter face Y of the prism 22 substantially normally thereto.
  • the angle ⁇ at which the reference beam R is reflected with respect to the normal of the upper surface of the glass slab 16 is greater than the critical angle ⁇ c for total internal reflection, the critical angle ⁇ c being defined by sin ⁇ 1(1/n) where n is the refractive index of the prism 22.
  • the input beam or subject beam S on emission from the laser source 24 is reflected by the apex mirror 10 to enter the expansion lens 12 substantially normally to its longitudinal axis.
  • the pin-hole filter 13 which is positioned at the exit of the expansion lens 12 ensures that the expanded laser beam diverges as a symmetrical cone of coherent light.
  • the diverging rays of coherent light then pass through the collimating lens 14 and the anti-gaussian device referred to above so that the rays exit therefrom all parallel to one another and uniformly distributed.
  • the rays then pass through the mask window 19 and also through the recording emulsion on the glass slab 16 so as to interfere with both the incident and reflected reference beam to form a holographic image in the recording emulsion of the object on the mask window 19.
  • the recording emulsion must exhibit minimal levels of scatter in order to violation of total internal reflection of light at the hologram surface.
  • advances in diochromated gelatin technology make this medium appropriately suitable. It is the intention to apply the method with the emphasis on hydrophobic polymeric compounds which are now becoming available. It will be further appreciated that not only do the materials have to provide the resolution required, but also exhibit a very low scatter. It is imperative that the materials neither shrink or expand, nor exhibit unflatness during the course of manufacture of the holographic image.
  • the mask window 19 is removed and the slice is introduced in its place.
  • the image from the hologram can be created as a real image in the silicon slice if the direction of the reference light is reversed, so that it enters at the face Y of the prism, is totally internally reflected at the upper surface of the glass slab 16 and exits at face Z.
  • the reference beam R emanates from the position 25 ⁇ , either by moving the laser source 25 through 90° for the replay operation (where separate laser sources are provided) or by moving the beam splitting mechanism through 90° in the case where a single laser source is used.
  • the silicon slices are automatically positioned on the spacers, left for a predetermined exposure time, and then removed therefrom to a store location.
  • the spacer can be replaced by an active type of device such as a piezo-­electric spacer whose thickness is variable by the application of a voltage.
  • the piezo-electric spacer is energized from a suitable variable voltage source, whose voltage may be varied between 0 and 150 volts by manual adjustment. The greater the voltage applied to the piezo-electric element, the more it expands. This achieves a mobility in the focus which allows for a degree of unflatness in the surface of the silicon slice.
  • the spectral line chosen must have approximately the same frequency as an Argon laser source used for the sources 24 and 25 in the formation of the hologram on the recording medium.
  • an Argon laser source used for the sources 24 and 25 in the formation of the hologram on the recording medium.
  • the ultra-violet line offers sensitivity advantages of the holographic recording material. It also provides improved resolution because of the reduced wavelength of light, and improved resist sensitivity. Furthermore there is no need to use a sensitizer in suitable polymeric materials.
  • a scanning technique can be used to progressively build up a holographic image of the printed circuit on the silicon slice. This overcomes the problem of exposure uniformity at the silicon slice. It also permits the continuous adjustment of the separation of the silicon slice from the glass slab thus permitting a smooth and continuous adjustment of the focus of the projected image to allow for unflatness of the silicon slices. Automatic focusing is achieved during the scanning by means of an optical monitoring system such as a zone plate which operates from the underside of the silicon slice. Scanning also permits local adjustment of image scale to allow for the shrinkage of the silicon slice during processing.
  • a further method of adjustment of the shape of the conjugate reference beam could also be employed for overcoming the problem of shrinkage during processing. This could be achieved by the use of magnetic elements surrounding the filter 34 of the Figure 3 embodiment or phase conjugate mirror 48 in case of the Figure 4 embodiment to be described.
  • the apparatus illustrates an alternative construction where only a single laser source is used.
  • the laser 24 provides both the input beam S and the reference beam R, by means of a beam splitter 40.
  • the input beam S passes through the beam splitter 40 to the apex mirror 10 as in the case of the main embodiment shown in Figure 2.
  • the reference beam R is reflected off the front face of the beam splitter 40, and directed to a movable mirror 42. Due to the polarization of the laser source 24, the reference beam R has a continuously variable transmission from maximum down to zero.
  • the mirror 42 is movable from a position shown in full lines to a position shown in dotted lines by rotation about a pivot point 44 by means (not shown).
  • the reference beam R is directed to an expansion lens 46 and thence through the collimating lens 27 so as to project substantially normally onto the face Z of the prism 22.
  • the reference beam R is directed on an expansion lens 50 via the mirrors 42 and 48 so as to project substantially normally onto the face Y of the prism 22.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Holo Graphy (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
EP87305626A 1986-06-30 1987-06-24 Fabrication de circuits intégrés utilisant des techniques holographiques Withdrawn EP0251681A3 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB868615908A GB8615908D0 (en) 1986-06-30 1986-06-30 Integrated circuits
GB8615908 1986-06-30

Publications (2)

Publication Number Publication Date
EP0251681A2 true EP0251681A2 (fr) 1988-01-07
EP0251681A3 EP0251681A3 (fr) 1989-09-06

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Family Applications (1)

Application Number Title Priority Date Filing Date
EP87305626A Withdrawn EP0251681A3 (fr) 1986-06-30 1987-06-24 Fabrication de circuits intégrés utilisant des techniques holographiques

Country Status (8)

Country Link
US (1) US4857425A (fr)
EP (1) EP0251681A3 (fr)
JP (1) JPS6327017A (fr)
KR (1) KR880001041A (fr)
CA (1) CA1273129A (fr)
GB (2) GB8615908D0 (fr)
IN (1) IN169623B (fr)
MY (1) MY101569A (fr)

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WO1991017488A3 (fr) * 1990-05-03 1991-12-12 Gibson Stewart Harry Procede de fabrication d'un circuit integre
EP0421645A3 (en) * 1989-10-04 1992-08-05 Holtronic Technologies Limited Apparatus for and method of optical inspection in a total internal reflection holographic imaging system
EP0462698A3 (en) * 1990-05-18 1992-10-07 Holtronic Technologies Limited Masks for high quality images from total internal reflection holograms
EP0560310A3 (en) * 1992-03-13 1994-07-27 Holtronic Technologies Ltd Method for the manufacture of high-quality total internal reflection holograms
KR100313355B1 (ko) * 1993-05-24 2002-04-06 알리 레자 노바리 인쇄된패턴의배율을변경시키는방법및장치

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0421645A3 (en) * 1989-10-04 1992-08-05 Holtronic Technologies Limited Apparatus for and method of optical inspection in a total internal reflection holographic imaging system
WO1991017488A3 (fr) * 1990-05-03 1991-12-12 Gibson Stewart Harry Procede de fabrication d'un circuit integre
EP0462698A3 (en) * 1990-05-18 1992-10-07 Holtronic Technologies Limited Masks for high quality images from total internal reflection holograms
EP0560310A3 (en) * 1992-03-13 1994-07-27 Holtronic Technologies Ltd Method for the manufacture of high-quality total internal reflection holograms
KR100313355B1 (ko) * 1993-05-24 2002-04-06 알리 레자 노바리 인쇄된패턴의배율을변경시키는방법및장치

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US4857425A (en) 1989-08-15
GB8714761D0 (en) 1987-07-29
GB2193344A (en) 1988-02-03
GB2193344B (en) 1990-08-29
EP0251681A3 (fr) 1989-09-06
CA1273129A (fr) 1990-08-21
JPS6327017A (ja) 1988-02-04
KR880001041A (ko) 1988-03-31
JPH0362299B2 (fr) 1991-09-25
IN169623B (fr) 1991-11-23
GB8615908D0 (en) 1986-08-06
MY101569A (en) 1991-12-17

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