EP0259878A3 - Elément émetteur d'électrons - Google Patents
Elément émetteur d'électrons Download PDFInfo
- Publication number
- EP0259878A3 EP0259878A3 EP87113260A EP87113260A EP0259878A3 EP 0259878 A3 EP0259878 A3 EP 0259878A3 EP 87113260 A EP87113260 A EP 87113260A EP 87113260 A EP87113260 A EP 87113260A EP 0259878 A3 EP0259878 A3 EP 0259878A3
- Authority
- EP
- European Patent Office
- Prior art keywords
- semiconductor substrate
- electron emission
- emission element
- type semiconductor
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 abstract 5
- 239000000758 substrate Substances 0.000 abstract 5
- 230000001443 photoexcitation Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/308—Semiconductor cathodes, e.g. cathodes with PN junction layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/34—Photo-emissive cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/34—Photoemissive electrodes
- H01J2201/342—Cathodes
- H01J2201/3421—Composition of the emitting surface
- H01J2201/3423—Semiconductors, e.g. GaAs, NEA emitters
Landscapes
- Cold Cathode And The Manufacture (AREA)
- Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
Applications Claiming Priority (10)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP212821/86 | 1986-09-11 | ||
| JP61212821A JPS6369118A (ja) | 1986-09-11 | 1986-09-11 | 電子放出素子 |
| JP61234501A JPS6391926A (ja) | 1986-10-03 | 1986-10-03 | 電子放出装置 |
| JP234501/86 | 1986-10-03 | ||
| JP284240/86 | 1986-12-01 | ||
| JP28424086A JP2601462B2 (ja) | 1986-12-01 | 1986-12-01 | 光励起電子放出素子 |
| JP29768386A JP2601464B2 (ja) | 1986-12-16 | 1986-12-16 | 電子放出素子 |
| JP297683/86 | 1986-12-16 | ||
| JP18191/87 | 1987-01-30 | ||
| JP1819187A JP2603233B2 (ja) | 1987-01-30 | 1987-01-30 | 光スイツチング電子放出素子 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| EP0259878A2 EP0259878A2 (fr) | 1988-03-16 |
| EP0259878A3 true EP0259878A3 (fr) | 1990-01-24 |
| EP0259878B1 EP0259878B1 (fr) | 1997-05-14 |
Family
ID=27520000
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP87113260A Expired - Lifetime EP0259878B1 (fr) | 1986-09-11 | 1987-09-10 | Elément émetteur d'électrons |
Country Status (2)
| Country | Link |
|---|---|
| EP (1) | EP0259878B1 (fr) |
| DE (1) | DE3752064T2 (fr) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2271464A (en) * | 1992-08-21 | 1994-04-13 | Sharp Kk | Photoemission apparatus. |
| US5336902A (en) * | 1992-10-05 | 1994-08-09 | Hamamatsu Photonics K.K. | Semiconductor photo-electron-emitting device |
| US5349177A (en) * | 1993-02-22 | 1994-09-20 | Itt Corporation | Image intensifier tube having a solid state electron amplifier |
| US5471051A (en) * | 1993-06-02 | 1995-11-28 | Hamamatsu Photonics K.K. | Photocathode capable of detecting position of incident light in one or two dimensions, phototube, and photodetecting apparatus containing same |
| EP0642147B1 (fr) * | 1993-09-02 | 1999-07-07 | Hamamatsu Photonics K.K. | Photo-émetteur, tube à électrons, et photodétecteur |
| JP5342769B2 (ja) | 2006-12-28 | 2013-11-13 | 浜松ホトニクス株式会社 | 光電陰極、電子管及び光電子増倍管 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3119947A (en) * | 1961-02-20 | 1964-01-28 | Clevite Corp | Semiconductive electron emissive device |
| FR1460237A (fr) * | 1964-12-16 | 1966-11-25 | Matsushita Electric Industrial Co Ltd | élément photo-électrique à couches minces |
| US3624273A (en) * | 1968-11-22 | 1971-11-30 | Alfred J Gale | Flat screen display devices using an array of charged particle sources |
| US3872489A (en) * | 1973-02-22 | 1975-03-18 | Gte Laboratories Inc | Electron emission from a cold cathode |
| EP0041119A1 (fr) * | 1980-06-02 | 1981-12-09 | International Business Machines Corporation | Dispositif d'émission d'électrons à froid |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1023257A (en) * | 1963-08-30 | 1966-03-23 | Rauland Corp | Photoemissive device |
| JPS5220222B2 (fr) * | 1973-06-28 | 1977-06-02 |
-
1987
- 1987-09-10 DE DE19873752064 patent/DE3752064T2/de not_active Expired - Fee Related
- 1987-09-10 EP EP87113260A patent/EP0259878B1/fr not_active Expired - Lifetime
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3119947A (en) * | 1961-02-20 | 1964-01-28 | Clevite Corp | Semiconductive electron emissive device |
| FR1460237A (fr) * | 1964-12-16 | 1966-11-25 | Matsushita Electric Industrial Co Ltd | élément photo-électrique à couches minces |
| US3624273A (en) * | 1968-11-22 | 1971-11-30 | Alfred J Gale | Flat screen display devices using an array of charged particle sources |
| US3872489A (en) * | 1973-02-22 | 1975-03-18 | Gte Laboratories Inc | Electron emission from a cold cathode |
| EP0041119A1 (fr) * | 1980-06-02 | 1981-12-09 | International Business Machines Corporation | Dispositif d'émission d'électrons à froid |
Also Published As
| Publication number | Publication date |
|---|---|
| EP0259878A2 (fr) | 1988-03-16 |
| DE3752064T2 (de) | 1997-11-06 |
| DE3752064D1 (de) | 1997-06-19 |
| EP0259878B1 (fr) | 1997-05-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0439627A4 (en) | Organic electroluminescent element | |
| SU855782A1 (ru) | Эмиттер электронов | |
| SG67550A1 (en) | Field emission electron source method of producing the same and use of the same | |
| RU94011577A (ru) | Электронный электер и устройство с автоэлектронной эмиссией | |
| WO1999050874A3 (fr) | Photocathode a grille destinee a l'emission controlee de faisceaux d'electrons simples et multiples | |
| DE3563577D1 (en) | Semiconductor device for producing an electron beam | |
| CA2051758A1 (fr) | Element electroluminescent | |
| EP0379325A3 (fr) | Dispositif d'émission de lumière | |
| EP0359329A3 (fr) | Dispositifs émetteurs de lumière à semi-conducteur à grande bande interdite | |
| EP0351868A3 (fr) | Dispositif électroluminescent à semi-conducteur composé | |
| ATE152857T1 (de) | Bilderzeugungsvorrichtung | |
| JPS6417484A (en) | Semiconductor light emitting element | |
| EP0259878A3 (fr) | Elément émetteur d'électrons | |
| JPS6433833A (en) | Electron emitting element | |
| DE69104319D1 (de) | Halbleiter-Elektronenemittierendes Element. | |
| JPS52124885A (en) | Semiconductor light emitting device | |
| TW343342B (en) | Field emission device arc-suppressor | |
| KR830008382A (ko) | 전자총 | |
| CA2057977A1 (fr) | Dispositif luminescent a semiconducteur | |
| US4197552A (en) | Luminescent semiconductor devices | |
| JPS6431335A (en) | Electron beam generator | |
| JPS5679479A (en) | Photoelectric conversion device | |
| JPS5782712A (en) | Voltage value display element | |
| JPS5398790A (en) | Semiconductor light emitting element | |
| JPS6413183A (en) | Emission display element |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
| AK | Designated contracting states |
Kind code of ref document: A2 Designated state(s): DE FR GB |
|
| PUAL | Search report despatched |
Free format text: ORIGINAL CODE: 0009013 |
|
| AK | Designated contracting states |
Kind code of ref document: A3 Designated state(s): DE FR GB |
|
| 17P | Request for examination filed |
Effective date: 19900611 |
|
| 17Q | First examination report despatched |
Effective date: 19930211 |
|
| GRAG | Despatch of communication of intention to grant |
Free format text: ORIGINAL CODE: EPIDOS AGRA |
|
| GRAH | Despatch of communication of intention to grant a patent |
Free format text: ORIGINAL CODE: EPIDOS IGRA |
|
| GRAH | Despatch of communication of intention to grant a patent |
Free format text: ORIGINAL CODE: EPIDOS IGRA |
|
| GRAA | (expected) grant |
Free format text: ORIGINAL CODE: 0009210 |
|
| AK | Designated contracting states |
Kind code of ref document: B1 Designated state(s): DE FR GB |
|
| REF | Corresponds to: |
Ref document number: 3752064 Country of ref document: DE Date of ref document: 19970619 |
|
| PLBE | No opposition filed within time limit |
Free format text: ORIGINAL CODE: 0009261 |
|
| STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT |
|
| 26N | No opposition filed | ||
| REG | Reference to a national code |
Ref country code: GB Ref legal event code: IF02 |
|
| PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: FR Payment date: 20030909 Year of fee payment: 17 |
|
| PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: GB Payment date: 20030910 Year of fee payment: 17 |
|
| PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: DE Payment date: 20030918 Year of fee payment: 17 |
|
| PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: GB Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20040910 |
|
| PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: DE Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20050401 |
|
| GBPC | Gb: european patent ceased through non-payment of renewal fee |
Effective date: 20040910 |
|
| PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: FR Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20050531 |
|
| REG | Reference to a national code |
Ref country code: FR Ref legal event code: ST |