EP0259878A2 - Elément émetteur d'électrons - Google Patents

Elément émetteur d'électrons Download PDF

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Publication number
EP0259878A2
EP0259878A2 EP87113260A EP87113260A EP0259878A2 EP 0259878 A2 EP0259878 A2 EP 0259878A2 EP 87113260 A EP87113260 A EP 87113260A EP 87113260 A EP87113260 A EP 87113260A EP 0259878 A2 EP0259878 A2 EP 0259878A2
Authority
EP
European Patent Office
Prior art keywords
electron emission
area
type semiconductor
emission element
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP87113260A
Other languages
German (de)
English (en)
Other versions
EP0259878A3 (fr
EP0259878B1 (fr
Inventor
Akira Suzuki
Takeo Tsukamoto
Akira Shimizu
Masao Sugata
Isamu Shimoda
Masahiko Okunuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP61212821A external-priority patent/JPS6369118A/ja
Priority claimed from JP61234501A external-priority patent/JPS6391926A/ja
Priority claimed from JP28424086A external-priority patent/JP2601462B2/ja
Priority claimed from JP29768386A external-priority patent/JP2601464B2/ja
Priority claimed from JP1819187A external-priority patent/JP2603233B2/ja
Application filed by Canon Inc filed Critical Canon Inc
Publication of EP0259878A2 publication Critical patent/EP0259878A2/fr
Publication of EP0259878A3 publication Critical patent/EP0259878A3/fr
Application granted granted Critical
Publication of EP0259878B1 publication Critical patent/EP0259878B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/308—Semiconductor cathodes, e.g. cathodes with PN junction layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/34—Photo-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/34—Photoemissive electrodes
    • H01J2201/342—Cathodes
    • H01J2201/3421—Composition of the emitting surface
    • H01J2201/3423—Semiconductors, e.g. GaAs, NEA emitters

Definitions

  • the photoelectric converting junction area composed of the semiconductor area of a conductive type, semiconductor area of opposite conductive type, and conductive area superposed on the transparent electrode, is unified, on the transparent substrate, with an MIM electron emission element composed of said conductive area, insulting area and metal layer.
  • the electrode of the photoelectric converting junction area and the conductive area of the MIM electron emission element are used commonly, and an insulating area is provided for electric insulation, and there is thus reached a simple structure enabling integration.
  • said photoelectric converting junction area is formed only under the recess of the metal layer, constituting the electron emitting portion of the MIM electron emission element, thereby achieving efficient electron emission.
  • the electron emission element is provided with a transparent electrode, a P-type semiconductor area formed on said transparent electrode, and an electrode formed on said P-type semiconductor area, whereby a voltage is applied across said transparent electrode and said electrode, and light is irradiated through said transparent electrode, thereby emitting the electrons generated in said P-type semiconductor from an electron emitting face at an end of said semiconductor area. It is extremely simple in structure, consisting of the P-type semiconductor area and electrodes and allowing light irradiation through the transparent electrode, thereby enabling easy manufacture and high integration.
  • the substrate 102 is transparent, and is composed, for example, of glass, ceramics, or an insulating crystal such as GaAs, GaSb, InAs, GaP or spinell (MgAl2O4).
  • the conductive area 205 serves as an electrode of the photoelectric converting junction area and also as the conductive layer of the MIM electron emission element, thus simplifying the entire structure.
  • the insulating area 206 serves as the insulating layer of the MIM electron emission element, and also insulates the lateral faces of the photoelectric converting junction area, thus preventing the deterioration of characteristic by current leak.
  • the photoelectric converting junction area for the photo­electric conversion and the MIM electron emission element for electron emission are mutually superposed and unified to enable high integration, and said junction area is formed only under the recess for electron emission, thereby improving the efficiency thereof. Besides said efficiency is further improved by the presence of area of the work function reducing material 208 in the recess 209. It is therefore rendered possible to produce, in integrated manner, photoexcitable electron emission elements having plural electron sources such as an image sensor.
  • Fig. 10A is a schematic view of an electron emission element in which a forward bias voltage is applied to a PN junction to inject electrons into the P-layer
  • Fig. 10B is a schematic chart showing the current-voltage characteristic thereof.
  • transparent electrodes 3011 - 3014 and electrodes 3031 - 3034 are made to cross each other to form a matrix, and a P-type semiconductor area (not shown) is formed at each crossing point.
  • a voltage V can be applied to desired P-type semiconductor areas by applying said voltage to desired transparent electrodes 3011 - 3014 and desired electrodes 3031 - 3034 through the control transistors T21 - T24 and T11 - T14.
  • the conductive layer 404 is composed of a metal such as Al or a semiconductor such as Si.
  • the insulating layer 405 is preferably composed, also from the standpoint of manufacture, of Al2O3 if the conductive layer is composed of Al, or of SiO2 if the conductive layer is composed of Si.
  • the metal layer 406 is composed of Al, Au or Pt.

Landscapes

  • Cold Cathode And The Manufacture (AREA)
  • Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
EP87113260A 1986-09-11 1987-09-10 Elément émetteur d'électrons Expired - Lifetime EP0259878B1 (fr)

Applications Claiming Priority (10)

Application Number Priority Date Filing Date Title
JP212821/86 1986-09-11
JP61212821A JPS6369118A (ja) 1986-09-11 1986-09-11 電子放出素子
JP61234501A JPS6391926A (ja) 1986-10-03 1986-10-03 電子放出装置
JP234501/86 1986-10-03
JP284240/86 1986-12-01
JP28424086A JP2601462B2 (ja) 1986-12-01 1986-12-01 光励起電子放出素子
JP29768386A JP2601464B2 (ja) 1986-12-16 1986-12-16 電子放出素子
JP297683/86 1986-12-16
JP18191/87 1987-01-30
JP1819187A JP2603233B2 (ja) 1987-01-30 1987-01-30 光スイツチング電子放出素子

Publications (3)

Publication Number Publication Date
EP0259878A2 true EP0259878A2 (fr) 1988-03-16
EP0259878A3 EP0259878A3 (fr) 1990-01-24
EP0259878B1 EP0259878B1 (fr) 1997-05-14

Family

ID=27520000

Family Applications (1)

Application Number Title Priority Date Filing Date
EP87113260A Expired - Lifetime EP0259878B1 (fr) 1986-09-11 1987-09-10 Elément émetteur d'électrons

Country Status (2)

Country Link
EP (1) EP0259878B1 (fr)
DE (1) DE3752064T2 (fr)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2271464A (en) * 1992-08-21 1994-04-13 Sharp Kk Photoemission apparatus.
EP0592731A1 (fr) * 1992-10-05 1994-04-20 Hamamatsu Photonics K.K. Dispositif semi-conducteur émettant des photoélectrons
EP0627756A1 (fr) * 1993-06-02 1994-12-07 Hamamatsu Photonics K.K. Photocathode, phototube et dispositif photodétecteur
EP0642147A1 (fr) * 1993-09-01 1995-03-08 Hamamatsu Photonics K.K. Photo-émetteur, tube à électrons, et photodétecteur
EP0721654A4 (fr) * 1993-09-29 1996-05-30 Int Standard Electric Corp Tube intensificateur d'images
EP1939917A3 (fr) * 2006-12-28 2008-07-23 Hamamatsu Photonics K.K. Photocathode, tube photomultiplicateur et tube d'électron

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3119947A (en) * 1961-02-20 1964-01-28 Clevite Corp Semiconductive electron emissive device
GB1023257A (en) * 1963-08-30 1966-03-23 Rauland Corp Photoemissive device
GB1117759A (en) * 1964-12-16 1968-06-26 Matsushita Electric Industrial Co Ltd Photoemissive device
US3624273A (en) * 1968-11-22 1971-11-30 Alfred J Gale Flat screen display devices using an array of charged particle sources
US3872489A (en) * 1973-02-22 1975-03-18 Gte Laboratories Inc Electron emission from a cold cathode
JPS5220222B2 (fr) * 1973-06-28 1977-06-02
US4352117A (en) * 1980-06-02 1982-09-28 International Business Machines Corporation Electron source

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2271464A (en) * 1992-08-21 1994-04-13 Sharp Kk Photoemission apparatus.
US6057639A (en) * 1992-08-21 2000-05-02 Sharp Kabushiki Kaisha Photoemission apparatus with spatial light modulator
EP0592731A1 (fr) * 1992-10-05 1994-04-20 Hamamatsu Photonics K.K. Dispositif semi-conducteur émettant des photoélectrons
US5336902A (en) * 1992-10-05 1994-08-09 Hamamatsu Photonics K.K. Semiconductor photo-electron-emitting device
EP0627756A1 (fr) * 1993-06-02 1994-12-07 Hamamatsu Photonics K.K. Photocathode, phototube et dispositif photodétecteur
US5471051A (en) * 1993-06-02 1995-11-28 Hamamatsu Photonics K.K. Photocathode capable of detecting position of incident light in one or two dimensions, phototube, and photodetecting apparatus containing same
EP0642147A1 (fr) * 1993-09-01 1995-03-08 Hamamatsu Photonics K.K. Photo-émetteur, tube à électrons, et photodétecteur
US5591986A (en) * 1993-09-02 1997-01-07 Hamamatsu Photonics K.K. Photoemitter electron tube and photodetector
US5747826A (en) * 1993-09-02 1998-05-05 Hamamatsu Photonics K.K. Photoemitter electron tube, and photodetector
EP0721654A4 (fr) * 1993-09-29 1996-05-30 Int Standard Electric Corp Tube intensificateur d'images
EP1939917A3 (fr) * 2006-12-28 2008-07-23 Hamamatsu Photonics K.K. Photocathode, tube photomultiplicateur et tube d'électron
US8421354B2 (en) 2006-12-28 2013-04-16 Hamamatsu Photonics K.K. Photocathode, photomultiplier and electron tube

Also Published As

Publication number Publication date
EP0259878A3 (fr) 1990-01-24
DE3752064T2 (de) 1997-11-06
DE3752064D1 (de) 1997-06-19
EP0259878B1 (fr) 1997-05-14

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