EP0356570A1 - Miroir de courant - Google Patents

Miroir de courant Download PDF

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Publication number
EP0356570A1
EP0356570A1 EP88114376A EP88114376A EP0356570A1 EP 0356570 A1 EP0356570 A1 EP 0356570A1 EP 88114376 A EP88114376 A EP 88114376A EP 88114376 A EP88114376 A EP 88114376A EP 0356570 A1 EP0356570 A1 EP 0356570A1
Authority
EP
European Patent Office
Prior art keywords
transistor
current
current mirror
transistors
current source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP88114376A
Other languages
German (de)
English (en)
Inventor
Wilhelm Dipl.-Ing. König
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Priority to EP88114376A priority Critical patent/EP0356570A1/fr
Priority to DE19893913446 priority patent/DE3913446A1/de
Publication of EP0356570A1 publication Critical patent/EP0356570A1/fr
Withdrawn legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/262—Current mirrors using field-effect transistors only

Definitions

  • the invention relates to a current mirror in integrated circuit technology with one of the emitter-collector path or from the conductive channel of a first transistor, a current mirror input and a current source series circuit in a reference circuit, with the emitter-collector path or Conductive channel of a second transistor in a circuit for a mirrored current and with a connection between the bases or gates of the first and the second transistor on the one hand and the current mirror input on the other.
  • CMOS Analog Circuit Design Allen and Holberg, Holt, Rinehart & Winston Inc., New York, 1987, pages 387 and 388 and "Analysis and Design of Integrated Circuits", Second Edition, Gray and Meyer , John Wiley & Sons, New York, 1984, pages 741 and 742.
  • Wilson or cascode current mirrors described in the literature mentioned are used instead of simple current mirrors. Because of the transistors connected in series with the emitter-collector paths or the conductive channels and the threshold voltages increased in MOS circuits due to the substrate control effect, relatively high voltage drops across the current mirror output are necessary so that the transistors do not become saturated and thereby the output resistance is greatly reduced. Since there is a standard supply voltage of 5 V for the digital functions on the block and an additional higher supply voltage for the analog function is undesirable, this solution has narrow limits.
  • the invention is based on the object of specifying a current mirror in which there are fewer errors in the current conversion, that is to say smaller differences between the input and output currents than in the known current mirrors.
  • this object is achieved according to the invention in that a third transistor as a controllable resistor or regulated current source with its emitter-collector path or its conductive channel to the emitter-collector path or to the conductive channel of the second transistor in Is connected in series and that a differential or operational amplifier is provided, the plus input of which is connected to the current mirror input, the minus input of which is connected to the connection point of the second and third transistor and the output of which is connected to the base or gate of the third transistor.
  • a third transistor as a controllable resistor or regulated current source with its emitter-collector path or its conductive channel to the emitter-collector path or to the conductive channel of the second transistor in Is connected in series and that a differential or operational amplifier is provided, the plus input of which is connected to the current mirror input, the minus input of which is connected to the connection point of the second and third transistor and the output of which is connected to the base or gate of the third transistor.
  • a simple differential amplifier standard circuit will meet the requirements for amplification and offset voltage in most cases. The additional power requirement is therefore low.
  • a multi-stage differential amplifier can also be used for higher demands on the precision of the implementation.
  • the current mirror according to the invention can advantageously be used in circuits with multiple current mirroring, such as bias potential generators.
  • the solution according to the invention is suitable for all applications in which an exact current mirroring with a small voltage drop across the current mirror output is required. It only requires little development effort and is not limited to MOS circuits.
  • FIG. 1 shows a current mirror according to the invention.
  • This contains n-channel field effect transistors T1 to T3, a differential amplifier D1, a current source Q and a connecting line L1.
  • the current mirror input is labeled E1 and the current mirror output is labeled A1.
  • the differential amplifier D1 compares the voltages at the current mirror input E1 and between the transistors T2 and T3 and keeps the differential voltage with the transistor T3 to a minimum. It can operate both in the resistance range as a regulated resistor and in the current source range as a regulated current source.
  • FIG. 2 shows an arrangement with two current mirrors according to the invention for generating bias potentials U1 and U2.
  • This arrangement contains the current mirror according to FIG. 1 for generating the bias potential U1 at the current mirror input E1.
  • the transistors T1 to T3 are n-channel field effect transistors.
  • the arrangement contains a further current mirror with - because of the different current direction - p-channel field effect transistors T4 to T6, with a differential amplifier D2 with a connecting line L2, with a current mirror input E2 and with a current mirror output A2.
  • U B denotes the operating voltage.
  • the first current mirror operates in the manner already described with reference to FIG. 1.
  • the conductive channel of the p-channel field effect transistor T4 is inserted into the circuit of the mirrored current I O1 .
  • the connection point between the transistors T3 and T4 is the current mirror input E2.
  • the current I O1 reflected in the first current mirror is simultaneously the reference current I Ref2 of the second current mirror. This works like the first and generates the bias potential U2 at the current mirror input E2.
  • the mirrored current of the second current mirror is designated imt I O2 .

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Amplifiers (AREA)
EP88114376A 1988-09-02 1988-09-02 Miroir de courant Withdrawn EP0356570A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP88114376A EP0356570A1 (fr) 1988-09-02 1988-09-02 Miroir de courant
DE19893913446 DE3913446A1 (de) 1988-09-02 1989-04-24 Stromspiegel

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP88114376A EP0356570A1 (fr) 1988-09-02 1988-09-02 Miroir de courant

Publications (1)

Publication Number Publication Date
EP0356570A1 true EP0356570A1 (fr) 1990-03-07

Family

ID=8199265

Family Applications (1)

Application Number Title Priority Date Filing Date
EP88114376A Withdrawn EP0356570A1 (fr) 1988-09-02 1988-09-02 Miroir de courant

Country Status (2)

Country Link
EP (1) EP0356570A1 (fr)
DE (1) DE3913446A1 (fr)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0403195A1 (fr) * 1989-06-12 1990-12-19 Inmos Limited Circuit miroir de courant
US5103123A (en) * 1990-09-17 1992-04-07 Motorola, Inc. Phase detector having all NPN transistors
EP0485973A3 (en) * 1990-11-16 1992-07-08 Kabushiki Kaisha Toshiba Switching constant current source circuit
EP0715239A1 (fr) * 1994-11-30 1996-06-05 STMicroelectronics S.r.l. Mirroir de courant de haute précision pour alimentation à basse tension
WO1997001283A1 (fr) * 1995-06-27 1997-01-16 British Technology Group Limited Appareil a courant constant
WO1998032062A1 (fr) * 1997-01-17 1998-07-23 Telefonaktiebolaget Lm Ericsson (Publ) Dispositif et procede permettant de determiner la valeur d'un courant
US5954572A (en) * 1995-06-27 1999-09-21 Btg International Limited Constant current apparatus
EP1160642A1 (fr) * 2000-05-31 2001-12-05 Zentrum Mikroelektronik Dresden GmbH Circuit de limitation de courant
EP1315063A1 (fr) * 2001-11-14 2003-05-28 Dialog Semiconductor GmbH Référence de courant indépendante de la tension de seuil d'un transistor MOS
RU2362203C1 (ru) * 2007-11-29 2009-07-20 Государственное образовательное учреждение высшего профессионального образования "Южно-Российский государственный университет экономики и сервиса" (ГОУ ВПО "ЮРГУЭС") Токовое зеркало
CN113282130A (zh) * 2021-06-08 2021-08-20 西安中颖电子有限公司 一种高精度led恒流驱动电路

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0523266B1 (fr) * 1991-07-17 1996-11-06 Siemens Aktiengesellschaft Miroir à courant intégrable
DE102017208187B4 (de) * 2017-05-16 2025-10-30 Continental Automotive Technologies GmbH Elektronisches Modul sowie Kraftfahrzeug und Verfahren zum Begrenzen eines Eingangsstroms während eines Einschaltvorgangs des Moduls

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3611171A (en) * 1969-12-11 1971-10-05 Ibm Integrated circuit video amplifier
US3904976A (en) * 1974-04-15 1975-09-09 Rca Corp Current amplifier
EP0262480A1 (fr) * 1986-09-24 1988-04-06 Siemens Aktiengesellschaft Circuit miroir de courant

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4283673A (en) * 1979-12-19 1981-08-11 Signetics Corporation Means for reducing current-gain modulation due to differences in collector-base voltages on a transistor pair
US4677323A (en) * 1985-07-22 1987-06-30 American Telephone & Telegraph Co., At&T Bell Laboratories Field-effect transistor current switching circuit

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3611171A (en) * 1969-12-11 1971-10-05 Ibm Integrated circuit video amplifier
US3904976A (en) * 1974-04-15 1975-09-09 Rca Corp Current amplifier
EP0262480A1 (fr) * 1986-09-24 1988-04-06 Siemens Aktiengesellschaft Circuit miroir de courant

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
ELECTRONICS LETTERS vol. 13, no. 11, 26 Mai 1977, Herts Seite 311 - 312; W.J. BARKER: "Negative Current-Mirror using NPN transistors" *

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0403195A1 (fr) * 1989-06-12 1990-12-19 Inmos Limited Circuit miroir de courant
US5087891A (en) * 1989-06-12 1992-02-11 Inmos Limited Current mirror circuit
US5103123A (en) * 1990-09-17 1992-04-07 Motorola, Inc. Phase detector having all NPN transistors
EP0485973A3 (en) * 1990-11-16 1992-07-08 Kabushiki Kaisha Toshiba Switching constant current source circuit
US5235218A (en) * 1990-11-16 1993-08-10 Kabushiki Kaisha Toshiba Switching constant current source circuit
EP0715239A1 (fr) * 1994-11-30 1996-06-05 STMicroelectronics S.r.l. Mirroir de courant de haute précision pour alimentation à basse tension
WO1997001283A1 (fr) * 1995-06-27 1997-01-16 British Technology Group Limited Appareil a courant constant
US5954572A (en) * 1995-06-27 1999-09-21 Btg International Limited Constant current apparatus
WO1998032062A1 (fr) * 1997-01-17 1998-07-23 Telefonaktiebolaget Lm Ericsson (Publ) Dispositif et procede permettant de determiner la valeur d'un courant
US6011385A (en) * 1997-01-17 2000-01-04 Telefonaktiebolaget Lm Ericsson Method and apparatus for measuring and regulating current to a load
EP1160642A1 (fr) * 2000-05-31 2001-12-05 Zentrum Mikroelektronik Dresden GmbH Circuit de limitation de courant
EP1315063A1 (fr) * 2001-11-14 2003-05-28 Dialog Semiconductor GmbH Référence de courant indépendante de la tension de seuil d'un transistor MOS
RU2362203C1 (ru) * 2007-11-29 2009-07-20 Государственное образовательное учреждение высшего профессионального образования "Южно-Российский государственный университет экономики и сервиса" (ГОУ ВПО "ЮРГУЭС") Токовое зеркало
CN113282130A (zh) * 2021-06-08 2021-08-20 西安中颖电子有限公司 一种高精度led恒流驱动电路

Also Published As

Publication number Publication date
DE3913446A1 (de) 1990-03-15

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