EP0379828A2 - Dispositif de traitement par plasma multipolaire à induction de radiofréquence - Google Patents

Dispositif de traitement par plasma multipolaire à induction de radiofréquence Download PDF

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Publication number
EP0379828A2
EP0379828A2 EP89480185A EP89480185A EP0379828A2 EP 0379828 A2 EP0379828 A2 EP 0379828A2 EP 89480185 A EP89480185 A EP 89480185A EP 89480185 A EP89480185 A EP 89480185A EP 0379828 A2 EP0379828 A2 EP 0379828A2
Authority
EP
European Patent Office
Prior art keywords
chamber
plasma
work piece
induction
accordance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP89480185A
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German (de)
English (en)
Other versions
EP0379828B1 (fr
EP0379828A3 (fr
Inventor
Dennis Keith Coultas
John Howard Keller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
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International Business Machines Corp
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Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of EP0379828A2 publication Critical patent/EP0379828A2/fr
Publication of EP0379828A3 publication Critical patent/EP0379828A3/fr
Application granted granted Critical
Publication of EP0379828B1 publication Critical patent/EP0379828B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32688—Multi-cusp fields

Definitions

  • This invention relates to apparatus for plasma processing of substrates, and more particularly to subtractive (etch­ing) and additive (deposition) processing of electronic circuit chips and packaging materials.
  • the problem with capacitive coupling of R.F. energy to a plasma employed for etching or depositing films is that to increase power to the level required to generate the plasma required, the voltage will be so high that the charged particles in the plasma will be accelerated to an excessive level of kinetic energy and will tend to sputter the work piece and to etch or sputter away any masks.
  • the effect will be to chamfer the mask opening, i.e. increase the size of openings in masks by etching the edges of the masks.
  • the effect also leads to ion damage and loss of selectivity. This is unacceptable as the requirements in the art are to decrease the size of openings as dimensions are decreasing in microelectronics. Instead one would like the flexibility of varying the ion energy according to the desired process.
  • U.S. patent 3,705,091 of Jacob for "Gas Discharge Appara­tus” shows a cylindrical glass reaction chamber coaxially wound with a helical R.F. coil energized by high frequency (13.5 mHz) R.F. to generate a plasma in a vacuum for etching of a tray of semiconductor slices.
  • the system operates in the 1 Torr pressure range and produces mainly reactive radicals.
  • the Jacob system does not operate in the desired reactive ion etching, RIE mode of this inven­tion. In the pressure range desired for the present inven­tion of 1 to 50 mTorr, the Jacob system would produce very non-uniform and very slow etching. No means for confining the plasma is shown.
  • Desilets et al describes a reactive ion etching tool having a cylindrical reactive ion etching chamber acting as an anode and a plate arrangement acting as a cathode and wherein an R.F. signal applied between cathode and anode acts to produce an active glow region within the chamber with a dark space existing over the internal surfaces thereof.
  • a reactive ion etching chamber structure has an internal top surface and sidewall surfaces forming a physically symmetrical arrangement with respect to the cathode plate positioned between the sidewall surfaces below the top surface, the top surface and surfaces being uniform except for gas input and exhaust ports with the gas exhaust ports having an opening dimension less than the thickness of the dark space existing over the internal surface.
  • dry processing appara­tus for plasma etching or deposition includes a chamber for plasma processing having an external wall for housing a work piece with a surface to be plasma processed in a gas.
  • a source of an induction field is located outside the chamber on its opposite side from the work piece.
  • a radio frequency (R.F.) induction field applied to the chamber generates a plasma in the gas.
  • the plasma is confined within the external wall in the chamber by magnetic dipoles providing a surface magnetic field for confining the plasma.
  • the surface magnetic field is confined to the space adjacent to the external wall.
  • An R.F. generator provides an R.F. generated bias to the work piece.
  • the chamber is lined with a material inert to a plasma or noncontaminating to the work piece, and the induction source in the form of an involut or spiral induction coil is located on the exterior of the liner material on the opposite side of the chamber from the work piece. Delivery of and distribution of the gas to the chamber is uniform about the periphery of the top cover because a manifold is located about the periphery of the chamber.
  • An orifice for controlling the gas pressure of the gas being admitted to the chamber is formed by the surface of the chamber and the manifold admits gas from the manifold into the chamber at a uniform pressure about the periphery of the cover of the chamber.
  • a surface magnetic field is posi­tioned adjacent to the induction coil to confine the field at the top of the chamber. It is further preferred that a capacitive or inductive reactance be connected in series with the induction coil to adjust the R.F. generated bias.
  • FIG. 1 shows apparatus 9 which includes an evacuated chamber 10 containing a semiconductor wafer 11 that com­prises a work piece to be treated with a plasma process.
  • a gas is admitted to chamber 10 from annular manifold 14 via annular orifice 15. The gas is used to form a plasma for processing of wafer 11 by etching or deposition.
  • a liner 16 forming a cylindrical outer wall contains the gas which is to be energized to form a plasma.
  • liner 16 is composed of quartz or another material which is nearly, i.e. substantially, inert or noncontaminating to the plasma to be contained in plasma processing chamber 10.
  • the cover 17 of the chamber 10 is composed of quartz also.
  • the chamber 10 is surrounded by quartz lined liner 16 and cover 17 on the sides and the top with the wafer 11 on the bottom.
  • the wafer 11 is supported on metallic base 23, but is insulated therefrom by an insulating coating on the upper surface of base 23.
  • a flat insulating ring 40 is provided on top of base 23 at the periphery of the wafer 11 and with an indentation 32 for supporting the edges of wafer 11. Ring 40 separates the plasma from the surfaces below, and it is shown shaped with indentation 32 to retain the wafer 11 in a central position at the base of chamber 10.
  • the gas is admitted to the chamber 10 from gas input port 12 through line 13 to annular manifold 14 formed by annular base 27 and the cover 17.
  • the manifold 14 is about 0.275 inches deep.
  • the manifold 14 is connected to chamber 10 through a circumferential, narrow annular orifice 15 of about 0.005 inches which maintains sufficient pressure of the gas in manifold 14 that the gas is distributed at a relatively uniform pressure about the entire circumference of the top of chamber 10.
  • the gas in manifold 14 passes through orifice 15 between the top of the lip of annular base 27 and the lower surface of cover 17 in substantially equal quantities per unit time all about the circumferen­tial area, i.e. the periphery, at the top of chamber 10 so that the plasma will be more highly uniform within the chamber 10.
  • the pressure of the gas in chamber 10 is at a low pressure of about 1-5 mTorr.
  • the gas to be exhausted from chamber 10 passes through annular orifice 18 at the base of the liner 16 or between magnets 21 into exhaust vacuum pumping manifold 19 and out through port 89, which is connected to vacuum pumps (not shown for convenience of illustration.)
  • Apparatus to provide magnetic confinement of the plasma is employed in the form of multiple-magnetic-dipoles (multipoles) 21 with vertical axes as shown in FIGS. 1, 2 and 3.
  • the multipoles 21 have their fields directed at right angles towards the vertical axis of the cylindrical chamber 10.
  • Multipoles 21 are arranged about the periphery of liner 16 in the classic magnetic confinement cylindri­cal arrangement.
  • the multipoles have their magnetic field directed inwardly as indicated by the plan view in FIG. 2. With this arrangement the alternating of the north and south poles (of multipoles 21) directed inwardly, looking down as in FIG.
  • Source 30 is connected by line 38 to the outer end of coil 22 at terminal 47.
  • the other end of source 30 is also connected to ground completing the circuit.
  • the inner end of spiral coil 22 is connected at terminal 28 by line 46 through switch 48 and line 39 to a bond 29 on the grounded wall 31 of apparatus 9 which is at electrical ground.
  • magnetic multipole confinement by magnets 32 located above cover 17 on its surface can be added adjacent to coil 22 to reduce the plasma loss to cover 17.
  • Reactance 50 can be a variable or fixed reactance which is capacitive or inductive, as desired, to adjust the R.F. bias on the plasma.
  • the connection of reactance 50 in series with coil 22, between terminal 28 and ground connection 29, is employed for the case where one is using the R.F. coil 22 alone, i.e. not using R.F. bias from source 24.
  • Reactance 50 is useful in a case in which it is desired to use R.F. induction without the R.F. bias from source 24. In this case one can vary the ion energy over a somewhat smaller range 10eV to 80 eV.
  • one varies the impedance to ground (from the center of the coil 22, bypassing line 39 when switch 48 is opened to close the circuit to ground through reactance 50 and lines 49, 51 and 39 as well as bond 29).
  • This allows one to go from the smallest amount of capacitive coupling (equivalent to middle turn 34 being at R.F. ground poten­tial) with a value of capacitive impedance equal to one half of the coils inductive impedance to somewhat more capacitive coupling for reactance 50 being inductive.
  • coil 22 includes a spiral with termi­nals, tapped holes comprising terminals 28 and 47 respec­tively for joining lines 28 and 38 to coil 22.
  • Coil 22 is shown having three turns with the second (middle) turn 34 from transition 33 to transition 35 being substantially wider to enhance the inductive qualities of the coil 22.
  • Both the outer turn 36 and the inner turn 37 are of about the same width.
  • the advantage of this design is that the plasma is more uniform beneath the second (middle) turn 34 than it would be with a coil with a single width. In general this principle applies regardless of how many turns are involved. What is involved with the variation in width (i.e. cross-sectional area) is that the inductances of the three turns are rebalanced.
  • the R.F. energy from the coil 22 ionizes the gas in cham­ber 10 into a sustained plasma for additive or subtractive processing of the wafer 11.
  • the wafer 11 is supported on metallic base 23.
  • Metallic base 23 cools wafer 11 with electrostatic clamping and backside cooling not shown for convenience of illustration, but as is well understood by those skilled in the art.
  • Base 23 is connected to an R.F. biasing source 24 at a frequency above about 13 MHz, preferably at 40 MHz which sets up an R.F. bias between the wafer 11 and the plasma, leading to a D.C. bias on the wafer 11.
  • the use of different frequencies reduces cou­pling between the two power supplies.
  • the high frequency R.F. bias gives a more monotonic distribution of ion energy, so there is improved control of ion energy for better selectivity of the rate of etching.
  • This R.F. bias provides ion energy control of the ions from the plasma as the R.F. level of the base 23 is varied by R.F. source 24.
  • a dark space exists upon the upper surface of the wafer 11.
  • the use of R.F. coil 22 instead of a capacitively coupled R.F. electrode to generate the plasma affords the advantage of reducing and controlling the kinetic energy of the ions striking the walls of liner 16 and wafer 11, thereby reducing the damage that can be done by ions and electrons at the high energy levels required for plasma processing contemplated for use with this apparatus. This also gives the flexibility of adjust­ing the ion energy according to process needs.
  • the other dotted curve is for a system in which the plasma is formed by an R.F. diode, i.e. capacitively coupled R.F.. It can be seen that at higher power levels, the R.F. induction produces far higher ion current at a given power level plus a linear rate of increase which are both pre­ferred characteristics. Ion current does not saturate as power increases, so very high plasma densities can be achieved at low ion kinetic energies.
  • This system can replace wet HF solutions for etching of thin layers.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Plasma Technology (AREA)
  • Electrodes Of Semiconductors (AREA)
EP19890480185 1989-01-25 1989-12-19 Dispositif de traitement par plasma multipolaire à induction de radiofréquence Expired - Lifetime EP0379828B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US30193389A 1989-01-25 1989-01-25
US301933 1989-01-25

Publications (3)

Publication Number Publication Date
EP0379828A2 true EP0379828A2 (fr) 1990-08-01
EP0379828A3 EP0379828A3 (fr) 1991-01-09
EP0379828B1 EP0379828B1 (fr) 1995-09-27

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Country Status (3)

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EP (1) EP0379828B1 (fr)
JP (1) JPH0770532B2 (fr)
DE (1) DE68924413T2 (fr)

Cited By (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0413282A3 (en) * 1989-08-14 1991-07-24 Lam Research Corporation Method and apparatus for producing magnetically-coupled planar plasma
US5241245A (en) * 1992-05-06 1993-08-31 International Business Machines Corporation Optimized helical resonator for plasma processing
US5280154A (en) * 1992-01-30 1994-01-18 International Business Machines Corporation Radio frequency induction plasma processing system utilizing a uniform field coil
WO1994006263A1 (fr) * 1992-09-01 1994-03-17 The University Of North Carolina At Chapel Hill Plasma a couplage inductif regule par champ magnetique a haute pression
EP0633713A1 (fr) * 1993-07-05 1995-01-11 Alcatel Cit Réacteur à plasma pour un procédé de dépôt ou de gravure
US5433812A (en) * 1993-01-19 1995-07-18 International Business Machines Corporation Apparatus for enhanced inductive coupling to plasmas with reduced sputter contamination
EP0688037A1 (fr) * 1994-06-14 1995-12-20 Sumitomo Metal Industries, Ltd. Système de traitement par plasma micro-ondes
US5518547A (en) * 1993-12-23 1996-05-21 International Business Machines Corporation Method and apparatus for reducing particulates in a plasma tool through steady state flows
US5521351A (en) * 1994-08-30 1996-05-28 Wisconsin Alumni Research Foundation Method and apparatus for plasma surface treatment of the interior of hollow forms
US5522934A (en) * 1994-04-26 1996-06-04 Tokyo Electron Limited Plasma processing apparatus using vertical gas inlets one on top of another
US5525159A (en) * 1993-12-17 1996-06-11 Tokyo Electron Limited Plasma process apparatus
US5529657A (en) * 1993-10-04 1996-06-25 Tokyo Electron Limited Plasma processing apparatus
US5540800A (en) * 1994-06-23 1996-07-30 Applied Materials, Inc. Inductively coupled high density plasma reactor for plasma assisted materials processing
US5540824A (en) * 1994-07-18 1996-07-30 Applied Materials Plasma reactor with multi-section RF coil and isolated conducting lid
US5565114A (en) * 1993-03-04 1996-10-15 Tokyo Electron Limited Method and device for detecting the end point of plasma process
US5587038A (en) * 1994-06-16 1996-12-24 Princeton University Apparatus and process for producing high density axially extending plasmas
US5614055A (en) * 1993-08-27 1997-03-25 Applied Materials, Inc. High density plasma CVD and etching reactor
US5653811A (en) * 1995-07-19 1997-08-05 Chan; Chung System for the plasma treatment of large area substrates
DE19606375A1 (de) * 1996-02-21 1997-08-28 Balzers Prozes Systeme Gmbh Plasmaquelle mit eingekoppelten Whistler- oder Helikonwellen
US5683537A (en) * 1993-10-04 1997-11-04 Tokyo Electron Limited Plasma processing apparatus
US5688357A (en) * 1995-02-15 1997-11-18 Applied Materials, Inc. Automatic frequency tuning of an RF power source of an inductively coupled plasma reactor
US5739051A (en) * 1993-03-04 1998-04-14 Tokyo Electron Limited Method and device for detecting the end point of plasma process
US5753044A (en) * 1995-02-15 1998-05-19 Applied Materials, Inc. RF plasma reactor with hybrid conductor and multi-radius dome ceiling
US5783492A (en) * 1994-03-04 1998-07-21 Tokyo Electron Limited Plasma processing method, plasma processing apparatus, and plasma generating apparatus
US5851294A (en) * 1995-10-23 1998-12-22 Watkins-Johnson Company Gas injection system for semiconductor processing
US5938883A (en) * 1993-01-12 1999-08-17 Tokyo Electron Limited Plasma processing apparatus
US5942855A (en) * 1996-08-28 1999-08-24 Northeastern University Monolithic miniaturized inductively coupled plasma source
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US5982100A (en) * 1997-07-28 1999-11-09 Pars, Inc. Inductively coupled plasma reactor
US5994207A (en) * 1997-05-12 1999-11-30 Silicon Genesis Corporation Controlled cleavage process using pressurized fluid
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US6051073A (en) * 1998-02-11 2000-04-18 Silicon Genesis Corporation Perforated shield for plasma immersion ion implantation
US6103599A (en) * 1997-07-25 2000-08-15 Silicon Genesis Corporation Planarizing technique for multilayered substrates
US6136140A (en) * 1993-01-12 2000-10-24 Tokyo Electron Limited Plasma processing apparatus
US6214162B1 (en) 1996-09-27 2001-04-10 Tokyo Electron Limited Plasma processing apparatus
US6213050B1 (en) 1998-12-01 2001-04-10 Silicon Genesis Corporation Enhanced plasma mode and computer system for plasma immersion ion implantation
US6228176B1 (en) 1998-02-11 2001-05-08 Silicon Genesis Corporation Contoured platen design for plasma immerson ion implantation
US6248250B1 (en) 1995-02-15 2001-06-19 Applied Materials Inc. RF plasma reactor with hybrid conductor and multi-radius dome ceiling
US6270617B1 (en) 1995-02-15 2001-08-07 Applied Materials, Inc. RF plasma reactor with hybrid conductor and multi-radius dome ceiling
US6291793B1 (en) 1994-10-31 2001-09-18 Appplied Materials, Inc. Inductively coupled plasma reactor with symmetrical parallel multiple coils having a common RF terminal
US6335293B1 (en) 1998-07-13 2002-01-01 Mattson Technology, Inc. Systems and methods for two-sided etch of a semiconductor substrate
US6369348B2 (en) 1997-06-30 2002-04-09 Applied Materials, Inc Plasma reactor with coil antenna of plural helical conductors with equally spaced ends
US6465051B1 (en) 1994-04-28 2002-10-15 Applied Materials, Inc. Method of operating high density plasma CVD reactor with combined inductive and capacitive coupling
US6890838B2 (en) 1997-07-18 2005-05-10 Silicon Genesis Corporation Gettering technique for wafers made using a controlled cleaving process
WO2005057607A3 (fr) * 2003-12-13 2005-11-17 Roth & Rau Ag Source plasma destinee a la production d'un plasma de couplage inductif
US7056808B2 (en) 1999-08-10 2006-06-06 Silicon Genesis Corporation Cleaving process to fabricate multilayered substrates using low implantation doses
USRE40963E1 (en) * 1993-01-12 2009-11-10 Tokyo Electron Limited Method for plasma processing by shaping an induced electric field
US8993410B2 (en) 2006-09-08 2015-03-31 Silicon Genesis Corporation Substrate cleaving under controlled stress conditions
CN108271309A (zh) * 2016-12-30 2018-07-10 中微半导体设备(上海)有限公司 一种电感耦合等离子处理装置
US11444221B2 (en) 2008-05-07 2022-09-13 Silicon Genesis Corporation Layer transfer of films utilizing controlled shear region
CN121709505A (zh) * 2026-02-13 2026-03-20 上海邦芯半导体科技有限公司 一种反应腔室及晶圆处理设备

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US6263941B1 (en) 1999-08-10 2001-07-24 Silicon Genesis Corporation Nozzle for cleaving substrates
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JP3787079B2 (ja) 2001-09-11 2006-06-21 株式会社日立製作所 プラズマ処理装置
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JP4657620B2 (ja) 2004-04-13 2011-03-23 株式会社日立ハイテクノロジーズ プラズマ処理装置

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Cited By (72)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0413282A3 (en) * 1989-08-14 1991-07-24 Lam Research Corporation Method and apparatus for producing magnetically-coupled planar plasma
US5280154A (en) * 1992-01-30 1994-01-18 International Business Machines Corporation Radio frequency induction plasma processing system utilizing a uniform field coil
US5241245A (en) * 1992-05-06 1993-08-31 International Business Machines Corporation Optimized helical resonator for plasma processing
WO1994006263A1 (fr) * 1992-09-01 1994-03-17 The University Of North Carolina At Chapel Hill Plasma a couplage inductif regule par champ magnetique a haute pression
US5648701A (en) * 1992-09-01 1997-07-15 The University Of North Carolina At Chapel Hill Electrode designs for high pressure magnetically assisted inductively coupled plasmas
US5938883A (en) * 1993-01-12 1999-08-17 Tokyo Electron Limited Plasma processing apparatus
US6265031B1 (en) 1993-01-12 2001-07-24 Tokyo Electron Limited Method for plasma processing by shaping an induced electric field
US6136140A (en) * 1993-01-12 2000-10-24 Tokyo Electron Limited Plasma processing apparatus
US6136139A (en) * 1993-01-12 2000-10-24 Tokyo Electron Limited Plasma processing apparatus
USRE40963E1 (en) * 1993-01-12 2009-11-10 Tokyo Electron Limited Method for plasma processing by shaping an induced electric field
US5433812A (en) * 1993-01-19 1995-07-18 International Business Machines Corporation Apparatus for enhanced inductive coupling to plasmas with reduced sputter contamination
US5622635A (en) * 1993-01-19 1997-04-22 International Business Machines Corporation Method for enhanced inductive coupling to plasmas with reduced sputter contamination
US5565114A (en) * 1993-03-04 1996-10-15 Tokyo Electron Limited Method and device for detecting the end point of plasma process
US5739051A (en) * 1993-03-04 1998-04-14 Tokyo Electron Limited Method and device for detecting the end point of plasma process
FR2707449A1 (fr) * 1993-07-05 1995-01-13 Cit Alcatel Réacteur à plasma pour un procédé de dépôt ou de gravure.
EP0633713A1 (fr) * 1993-07-05 1995-01-11 Alcatel Cit Réacteur à plasma pour un procédé de dépôt ou de gravure
US5614055A (en) * 1993-08-27 1997-03-25 Applied Materials, Inc. High density plasma CVD and etching reactor
US5529657A (en) * 1993-10-04 1996-06-25 Tokyo Electron Limited Plasma processing apparatus
US5683537A (en) * 1993-10-04 1997-11-04 Tokyo Electron Limited Plasma processing apparatus
US5525159A (en) * 1993-12-17 1996-06-11 Tokyo Electron Limited Plasma process apparatus
US5518547A (en) * 1993-12-23 1996-05-21 International Business Machines Corporation Method and apparatus for reducing particulates in a plasma tool through steady state flows
US5543184A (en) * 1993-12-23 1996-08-06 International Business Machines Corporation Method of reducing particulates in a plasma tool through steady state flows
US5783492A (en) * 1994-03-04 1998-07-21 Tokyo Electron Limited Plasma processing method, plasma processing apparatus, and plasma generating apparatus
US5522934A (en) * 1994-04-26 1996-06-04 Tokyo Electron Limited Plasma processing apparatus using vertical gas inlets one on top of another
US6465051B1 (en) 1994-04-28 2002-10-15 Applied Materials, Inc. Method of operating high density plasma CVD reactor with combined inductive and capacitive coupling
EP0688037A1 (fr) * 1994-06-14 1995-12-20 Sumitomo Metal Industries, Ltd. Système de traitement par plasma micro-ondes
US5529632A (en) * 1994-06-14 1996-06-25 Sumitomo Metal Industries, Ltd. Microwave plasma processing system
US5587038A (en) * 1994-06-16 1996-12-24 Princeton University Apparatus and process for producing high density axially extending plasmas
US5540800A (en) * 1994-06-23 1996-07-30 Applied Materials, Inc. Inductively coupled high density plasma reactor for plasma assisted materials processing
US5540824A (en) * 1994-07-18 1996-07-30 Applied Materials Plasma reactor with multi-section RF coil and isolated conducting lid
US5521351A (en) * 1994-08-30 1996-05-28 Wisconsin Alumni Research Foundation Method and apparatus for plasma surface treatment of the interior of hollow forms
US6291793B1 (en) 1994-10-31 2001-09-18 Appplied Materials, Inc. Inductively coupled plasma reactor with symmetrical parallel multiple coils having a common RF terminal
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EP0379828B1 (fr) 1995-09-27
DE68924413D1 (de) 1995-11-02
JPH02235332A (ja) 1990-09-18
EP0379828A3 (fr) 1991-01-09
JPH0770532B2 (ja) 1995-07-31
DE68924413T2 (de) 1996-05-02

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