EP0576692B1 - Intensificateur d'images muni à capteur d'images - Google Patents
Intensificateur d'images muni à capteur d'images Download PDFInfo
- Publication number
- EP0576692B1 EP0576692B1 EP92110505A EP92110505A EP0576692B1 EP 0576692 B1 EP0576692 B1 EP 0576692B1 EP 92110505 A EP92110505 A EP 92110505A EP 92110505 A EP92110505 A EP 92110505A EP 0576692 B1 EP0576692 B1 EP 0576692B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- image
- protective layer
- image intensifier
- layer
- image sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010410 layer Substances 0.000 claims description 24
- 239000011241 protective layer Substances 0.000 claims description 18
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 230000000694 effects Effects 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims description 3
- 239000005355 lead glass Substances 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 2
- -1 indium-tin-oxide compound Chemical class 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- 238000001444 catalytic combustion detection Methods 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 229910052681 coesite Inorganic materials 0.000 description 4
- 229910052906 cristobalite Inorganic materials 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 229910052682 stishovite Inorganic materials 0.000 description 4
- 229910052905 tridymite Inorganic materials 0.000 description 4
- 239000000758 substrate Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000002594 fluoroscopy Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J31/00—Cathode ray tubes; Electron beam tubes
- H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
- H01J31/50—Image-conversion or image-amplification tubes, i.e. having optical, X-ray, or analogous input, and optical output
- H01J31/501—Image-conversion or image-amplification tubes, i.e. having optical, X-ray, or analogous input, and optical output with an electrostatic electron optic system
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2231/00—Cathode ray tubes or electron beam tubes
- H01J2231/50—Imaging and conversion tubes
- H01J2231/50005—Imaging and conversion tubes characterised by form of illumination
- H01J2231/5001—Photons
- H01J2231/50031—High energy photons
- H01J2231/50036—X-rays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2231/00—Cathode ray tubes or electron beam tubes
- H01J2231/50—Imaging and conversion tubes
- H01J2231/50057—Imaging and conversion tubes characterised by form of output stage
- H01J2231/50068—Electrical
- H01J2231/50073—Charge coupled device [CCD]
Definitions
- the invention relates to an image intensifier with a vacuum housing, an input luminescent screen, an electron optics and an image sensor mounted on the opposite side of the vacuum housing inside the luminescent screen.
- Such an image intensifier is described in EP-A-0 083 240, which is used in medical diagnostics for examination with X-rays.
- the X-ray image intensifier provides two-dimensional fluoroscopy images in the form of video images.
- the X-ray quanta are absorbed in a scintillator of the entrance fluorescent screen and converted into light.
- the emitted light quanta release electrons in a photocathode of the entrance fluorescent screen.
- These electrons are accelerated in the electrical field of the electron optics and focused on an image sensor, which converts the electron image into a video image and delivers corresponding video signals.
- Such an X-ray image intensifier directly gives electrical image signals for further processing in a digital image system or for video image display.
- Image sensors as solid-state image recorders are usually based on the charge shift principle (CCD) and, in their usual design, are suitable for the detection of photons in the visible range.
- Back-thinned CCDs can be used for the detection of electrons.
- Electron irradiation of a CCD from the front would also affect the extremely thin insulating layer, which may consist of SiO2, for example, and the conductive displacement structures (gates) of the semiconductor substrate separates.
- the requirements for this insulating layer are very high due to the high field strengths. Irradiations with charged particles, for example electrons, lead to the formation of quasi-solid ions and thus to the formation of intermediate states (F centers) in the band gap of SiO2. These traps lead to increased dark current and a deterioration in charge transfer efficiency. The charging effects also lead to a change in the shift potential at the gates.
- the invention is based on the object of providing image intensifiers with image sensors of the type mentioned at the outset, in which the image sensors are protected from the impinging electrons so that they can be used without problems.
- the image sensor is an optical CCD converter which is provided with a luminescent layer on the side facing the input luminescent screen and that a transparent protective layer is arranged between the CCD converter and the luminescent layer, which slows down impinging electrons.
- This protective layer ensures that the electrons are braked in such a way that they no longer reach the image sensor.
- the protective layer should have sufficient electrical conductivity so that the formation of F centers does not occur.
- the protective layer consists of a material with a high specific weight, for example an indium-tin-oxide compound or lead glass.
- the x-ray image intensifier with a vacuum housing 1.
- the x-ray image intensifier On the side facing the x-rays 2, the x-ray image intensifier has an input luminescent screen 3 in the interior of the vacuum housing 1 which contains a luminescent layer applied to a photocathode.
- the electrons 4 emanating from the photocathode are accelerated and focused on an image sensor 6 by electron optics 5.
- This image sensor 6 converts the incident electrons 4 into an electrical signal, which is further processed as a video signal and displayed on a monitor.
- FIG. 2 shows the cross section through the image sensor 6 according to the invention, which may have a CCD converter 7 to 10.
- a CCD converter 7 to 10 On a substrate 7, an epitaxial layer 8 for charge collection and transport of the electrons is applied, which is covered by an SiO2 insulation layer 9.
- SiO2 insulation layer 9 On the SiO2 insulation layer 9 there are the gate structures 10.
- a protective layer 11 according to the invention is arranged, which may consist of indium tin oxide (ITO), for example.
- ITO indium tin oxide
- An electron-permeable layer is on the phosphor layer 12
- An electrical insulation layer 14 can be provided between the protective layer 11 and the gate structures 10, in order to prevent interference from the electrically conductive protective layer 11.
- the electrons 4 strike the image sensor 6, penetrate the aluminum layer 13 and penetrate into the phosphor layer 12, generating photons 15 which can penetrate the transparent protective layer 11, are detected in the image sensor 6 and can be read out as charges.
- the transparent protective layer instead of the ITO protective layer, however, a layer of lead glass or amorphous silicon (aSi) can also be used, for example. It is essential that the transparent protective layer should have a high specific weight in order to be able to keep the optically effective thickness as small as possible, so that complete electron absorption is ensured regardless of the luminescent layer to be used.
- aSi amorphous silicon
Landscapes
- Transforming Light Signals Into Electric Signals (AREA)
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
- Measurement Of Radiation (AREA)
- Solid State Image Pick-Up Elements (AREA)
Claims (7)
- Amplificateur de brillance comportant une enceinte à vide (1), un écran luminescent (3) d'entrée, une optique électronique (5) et un détecteur d'images (6 à 10), qui est disposé du côté de l'enceinte à vide (1) opposé à l'écran luminescent (3), à l'intérieur de cette enceinte, caractérisé par le fait que le détecteur d'images (6 à 10) est un convertisseur optique CCD, qui est pourvu d'une couche luminescente (12) sur la face tournée vers l'écran luminescent d'entrée (3) et qu'entre le convertisseur CCD (6 à 10) et la couche luminescente (12) est disposée une couche transparente de protection (11), qui provoque un freinage d'électrons incidents (4).
- Amplificateur de brillance suivant la revendication 1, caractérisé par le fait que la couche de protection (11) a une conductivité électrique, qui empêche la formation de centres F.
- Amplificateur de brillance suivant la revendication 1 ou 2, caractérisé par le fait qu'une couche isolante (14) est disposée entre la couche de protection (11) et le détecteur d'images (6 à 10).
- Amplificateur de brillance suivant l'une des revendications 1 à 3, caractérisé par le fait que la couche de protection (11) est en un matériau de grande masse volumique.
- Amplificateur de brillance suivant l'une des revendications 1 à 4, caractérisé par le fait que la couche de protection (11) est en un composé d'oxyde d'indium et d'étain.
- Amplificateur de brillance suivant l'une des revendications 1 à 4, caractérisé par le fait que la couche de protection (11) est en verre au plomb.
- Amplificateur de brillance suivant l'une des revendications 1 à 4, caractérisé par le fait que la couche de protection (11) comporte du silicium amorphe (aSi).
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP92110505A EP0576692B1 (fr) | 1992-06-22 | 1992-06-22 | Intensificateur d'images muni à capteur d'images |
| DE59204942T DE59204942D1 (de) | 1992-06-22 | 1992-06-22 | Bildverstärker mit Bildsensor |
| US08/081,826 US5349178A (en) | 1992-06-22 | 1993-06-22 | Image intensifier with protected image sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP92110505A EP0576692B1 (fr) | 1992-06-22 | 1992-06-22 | Intensificateur d'images muni à capteur d'images |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| EP0576692A1 EP0576692A1 (fr) | 1994-01-05 |
| EP0576692B1 true EP0576692B1 (fr) | 1996-01-03 |
Family
ID=8209736
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP92110505A Expired - Lifetime EP0576692B1 (fr) | 1992-06-22 | 1992-06-22 | Intensificateur d'images muni à capteur d'images |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US5349178A (fr) |
| EP (1) | EP0576692B1 (fr) |
| DE (1) | DE59204942D1 (fr) |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL177160C (nl) * | 1977-10-24 | 1985-08-01 | Philips Nv | Roentgenbeeldversterkerbuis. |
| EP0083240B1 (fr) * | 1981-12-25 | 1988-06-01 | Kabushiki Kaisha Toshiba | Capteur d'images à l'état solide à haute résolution |
| NL8202546A (nl) * | 1982-06-23 | 1984-01-16 | Philips Nv | Stralingsdetector. |
| FR2629267B1 (fr) * | 1988-03-22 | 1996-01-26 | Thomson Csf | Dispositif de conversion chromatique d'une image obtenue en rayonnement electromagnetique et procede de fabrication correspondant |
| NL8901711A (nl) * | 1989-07-05 | 1991-02-01 | Philips Nv | Stralingsdetector voor elementaire deeltjes. |
| FR2652447A1 (fr) * | 1989-09-22 | 1991-03-29 | Philips Electronique Lab | Tube a rayons cathodiques muni d'un photodeviateur. |
| FR2666448B1 (fr) * | 1990-09-04 | 1992-10-16 | Thomson Tubes Electroniques | Tube intensificateur d'image a isolation electrique optimisee. |
-
1992
- 1992-06-22 EP EP92110505A patent/EP0576692B1/fr not_active Expired - Lifetime
- 1992-06-22 DE DE59204942T patent/DE59204942D1/de not_active Expired - Fee Related
-
1993
- 1993-06-22 US US08/081,826 patent/US5349178A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US5349178A (en) | 1994-09-20 |
| EP0576692A1 (fr) | 1994-01-05 |
| DE59204942D1 (de) | 1996-02-15 |
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