EP0595831A1 - Circuit limiteur de la puissance du signal optique emis par un laser - Google Patents

Circuit limiteur de la puissance du signal optique emis par un laser

Info

Publication number
EP0595831A1
EP0595831A1 EP92912937A EP92912937A EP0595831A1 EP 0595831 A1 EP0595831 A1 EP 0595831A1 EP 92912937 A EP92912937 A EP 92912937A EP 92912937 A EP92912937 A EP 92912937A EP 0595831 A1 EP0595831 A1 EP 0595831A1
Authority
EP
European Patent Office
Prior art keywords
laser
circuit arrangement
temperature
transistor
power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP92912937A
Other languages
German (de)
English (en)
Inventor
Thomas Neuhaus
Klaus Dr. Panzer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Priority to EP92912937A priority Critical patent/EP0595831A1/fr
Publication of EP0595831A1 publication Critical patent/EP0595831A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/06825—Protecting the laser, e.g. during switch-on/off, detection of malfunctioning or degradation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/06804—Stabilisation of laser output parameters by monitoring an external parameter, e.g. temperature

Definitions

  • Circuit arrangement for limiting the power of the optical signal emitted by a laser
  • the invention relates to a circuit arrangement for limiting the power of the optical signal emitted by a laser, an operating voltage source, a laser and the parallel connection of a plurality of series circuits of a resistor forming a circuit with the main electrodes of a transistor.
  • P 570 10 279 discloses a circuit arrangement in which an operating voltage source, a laser and the parallel circuit of a plurality of series circuits of a resistor form a circuit with the main electrodes of a transistor. According to the document, this circuit arrangement solves the problem of reduced power consumption compared to a circuit arrangement with only one transistor. There are no indications of a limitation of the power of the optical signal emitted by a laser in the event of a fault.
  • glass fiber transmission systems are increasingly being used for the transmission of messages, in which message signals present as electrical signals are converted into optical signals with the aid of a laser, which are fed via an optical fiber to a receiving device, where they are converted back into electrical signals .
  • the maximum permissible radiation (MZB) of the cornea is for an optical signal with a wavelength of 1300 nm and An optical power of 3 mW is achieved when the exit surface of the single-mode fiber from which the optical sign emerges is at a distance of 10 mm from the cornea.
  • MZB maximum permissible radiation
  • the transmission link is operated with lower power values than the above for the optical signal, so that there is no danger when the transmission link is disconnected; in the event of a malfunction, however, power values for the optical signal that exceed the permissible limit may occur.
  • the invention solves the problem of specifying a circuit arrangement for limiting the power of the optical signal emitted by a laser, in which if any component of the circuit arrangement fails, the power of the optical signal emitted by the laser within its operating temperature range is limited below a predetermined limit value .
  • the problem is solved in that at least some of the transistors on their control electrodes are acted upon by a control signal which is dependent on the temperature of the laser.
  • the circuit arrangement according to the invention has the advantage that the distribution of the current feeding the laser to a plurality of transistors means that each transistor has a correspondingly lead reduced current and must switch off, the shortened time required for switching off a reduced current is available for an increase in the operating frequency of the circuit arrangement.
  • FIG. 1 shows a circuit arrangement according to the invention.
  • FIG. 2 shows a graphical representation of measured values determined for the circuit arrangement shown in FIG. 1.
  • FIG. 1 shows a transistor T1 which is connected with its one main electrode via a resistor Rel to the terminal Vcc having the high potential of an operating voltage source having the potential difference Vcc-Vss at its terminals.
  • the other main electrode of the transistor T1 is connected to the anode of a laser diode LD, the cathode of which is connected to the terminal Vss of the operating voltage source which has the low potential.
  • the series circuit of the transistor T1 with the resistor Rel is connected in series with identical series circuits of a respective transistor T2, T3, T4 with a respective resistor R2, R3, R4.
  • the transistors T1 ... T4 may be given by PNP transistors with the trade name BC 808, which are connected to a respective resistor Re by their emitter.
  • the base connections which form the control electrodes of the transistors T1 ... T4, are each connected to the terminal Vcc via a resistor Rbl ... Rb4. These base connections are each connected via a resistor Rvl ... Rv4 to the collector of a transistor T5.
  • the resistors Rv2 ... Rv4 are temperature-dependent resistors with a negative temperature coefficient, which have the same resistance value as the resistor Rvl at an average temperature of the operating temperature range of the laser diode.
  • the resistors Rv2 ... Rv4 as indicated by a dashed line labeled Temp, are arranged in relation to the laser diode LD in such a way that the resistances essentially take on the temperature of the laser diode.
  • the collector of transistor T5 is connected to terminal Vcc via a resistor Rc5.
  • the emitter of transistor T5 is connected to terminal Vss via a resistor Re5.
  • the base of transistor T5 is connected via a resistor Rb5 to the control voltage connection Ss of the circuit arrangement.
  • the control voltage connection Ss is supplied with a control voltage which is output by a control circuit, not shown, and which may assume voltage values between 0 and 3 V. For small control voltages close to 0 V, transistor T5 remains blocked, causing its collector to assume the high potential of terminal Vcc. For increasing values of
  • the control voltage of the transistor T5 becomes increasingly low-resistance, with a voltage being established at the collector of the transistor T5 when the transistor T5 is completely turned on, which voltage is essentially determined by the resistance ratio of Rc5 to Re5. If the resistor Rc5 and the resistor Re5 have the same resistance value, when the transistor T5 is completely switched on, a voltage value is set at its collector which corresponds approximately to half the operating voltage potential Vcc-Vss. For voltage values at the collector of transistor T5 that are clearly below the potential of terminal Vcc, a current flows through a respective resistor Rel ... Re4, the associated emitter-base path of the respective transistor T1 ... T4, the respective resistor Rvl ...
  • the resistors Rbl ... Rb4, which together with the associated resistors Rvl ... Rv4 when the associated transistors T1 ... T4 are turned on to provide a suitable emitter-base voltage, are used when the transistors T1 are blocked. ..T4 for accelerated clearing of charge carriers in the space charge zone of the emitter-base transition of a respective transistor T1 ... T4 and thus for an accelerated blocking of these transistors.
  • each individual transistor must carry a correspondingly reduced current, as a result of which the correspondingly smaller number of charge carriers in the emitter Collector path of a respective transistor T1 ... T4 results in a shortened switch-off time of the transistors, which in turn allows an increased operating frequency of the circuit arrangement.
  • the resistor Rvl via the transistor T1 allows a basic current through the laser diode LD, while the resistors Rv2 ... Rv4 allow the current flowing through the associated transistors T2 ... T4 to the laser diode LD control that with increasing operating temperature of the laser diode larger values for the current through the laser diode are permitted.
  • Figure 2 shows the profile obtained for a circuit arrangement of Figure 1 by measuring a to achieve a predetermined power of light emitted from the laser diode LD optical signal required laser current IL and a Maxi ⁇ maelstrom IM over a temperature range of -20 ⁇ C to 60 ° C.
  • the maximum current IM indicates the maximum current through the laser diode LD that is permitted by the circuit arrangement.
  • the maximum current IM has on the one hand a difference to the laser current IL over the entire temperature range, which is available as a reserve for an increased current requirement of the laser diode due to aging; on the other hand, the maximum current IM at most assumes such a value for each temperature in the temperature range that the limit value for the maximum permissible power of the optical signal emitted by the laser diode LD is maintained.
  • the circuit arrangement according to the invention can be dimensioned such that the named relationships of maximum current IM to laser current IL are also observed, taking into account component tolerances.
  • the circuit arrangement according to the invention thus also ensures that the control circuit fails, for example due to there can be a failure of the monitor photodiode of the control circuit and in which the control circuit outputs a maximum voltage to the control voltage connection Ss, exercise the entire operating temperature range for maintaining the limit value of the power of the optical signal emitted by the laser diode LD.

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

Dans un circuit limiteur de la puissance du signal optique émis par un laser (LD), le courant est fourni par le laser grâce à une pluralité de montages en série d'un transistor (T1, T2, T3, T4) et d'une résistance (Re1, Re2, Re3, Re4), ces montages en série étant interconnectés en parallèle. En outre, une limitation du courant maximal s'écoulant dans le laser en fonction de la température de fonctionnement du laser est assurée par un signal de commande variable avec la température et transmis aux électrodes de commande des transistors.
EP92912937A 1991-07-24 1992-06-25 Circuit limiteur de la puissance du signal optique emis par un laser Withdrawn EP0595831A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP92912937A EP0595831A1 (fr) 1991-07-24 1992-06-25 Circuit limiteur de la puissance du signal optique emis par un laser

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
EP91112451 1991-07-24
EP91112451 1991-07-24
PCT/EP1992/001435 WO1993002493A1 (fr) 1991-07-24 1992-06-25 Circuit limiteur de la puissance du signal optique emis par un laser
EP92912937A EP0595831A1 (fr) 1991-07-24 1992-06-25 Circuit limiteur de la puissance du signal optique emis par un laser

Publications (1)

Publication Number Publication Date
EP0595831A1 true EP0595831A1 (fr) 1994-05-11

Family

ID=8206978

Family Applications (1)

Application Number Title Priority Date Filing Date
EP92912937A Withdrawn EP0595831A1 (fr) 1991-07-24 1992-06-25 Circuit limiteur de la puissance du signal optique emis par un laser

Country Status (3)

Country Link
US (1) US5394419A (fr)
EP (1) EP0595831A1 (fr)
WO (1) WO1993002493A1 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4116133B2 (ja) * 1997-07-31 2008-07-09 株式会社東芝 温度依存型定電流発生回路およびこれを用いた光半導体素子の駆動回路
EP1003257B1 (fr) * 1998-11-19 2006-03-08 Alcatel Méthode et système pour prolonger la durée de vie utile d'un laser
US7521985B2 (en) * 2005-07-01 2009-04-21 Semiconductor Components Industries, L.L.C. Method for regulating temperature and circuit therefor
DE102008021588B4 (de) * 2008-04-30 2011-05-19 Esw Gmbh Laser und Verfahren zur Erzeugung gepulster Laserstrahlung
CA2922421C (fr) * 2013-10-07 2018-03-06 Halliburton Energy Services, Inc. Procedes de limitation de puissance destines a etre utilises avec des systemes optiques dans des endroits situes dans des zones dangereuses

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5710279A (en) * 1980-06-20 1982-01-19 Hitachi Ltd Driving current for light emitting diode and semiconductor laser
JPS5754382A (en) * 1980-09-19 1982-03-31 Matsushita Electric Ind Co Ltd Power source device for laser diode
JPS5955083A (ja) * 1982-09-24 1984-03-29 Fujitsu Ltd 半導体レ−ザ−出力安定化方式
DE3614691A1 (de) * 1986-04-30 1987-11-05 Siemens Ag Integrierbarer impulsverstaerker
JPH02228084A (ja) * 1989-03-01 1990-09-11 Fujitsu Ltd 半導体レーザの駆動回路
JPH0360087A (ja) * 1989-07-27 1991-03-15 Fujitsu Ltd 半導体レーザの駆動回路
DE4210022A1 (de) * 1992-03-27 1993-09-30 Sel Alcatel Ag Ansteuerschaltung für einen Laser

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO9302493A1 *

Also Published As

Publication number Publication date
US5394419A (en) 1995-02-28
WO1993002493A1 (fr) 1993-02-04

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