EP0694932B1 - Drosselspuleanordnung - Google Patents
Drosselspuleanordnung Download PDFInfo
- Publication number
- EP0694932B1 EP0694932B1 EP95304759A EP95304759A EP0694932B1 EP 0694932 B1 EP0694932 B1 EP 0694932B1 EP 95304759 A EP95304759 A EP 95304759A EP 95304759 A EP95304759 A EP 95304759A EP 0694932 B1 EP0694932 B1 EP 0694932B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- metallisation
- inductor
- spiral
- layer
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/0006—Printed inductances
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/28—Coils; Windings; Conductive connections
- H01F27/29—Terminals; Tapping arrangements for signal inductances
- H01F27/292—Surface mounted devices
Definitions
- Very compact inductors may also be realised in an integrated form within the upper metallisation layers of a multichip module type D (MCM-D) substrate structure.
- MCM-D multichip module type D
- Such inductors can provide inductance values between 1 and 100 nH within a 1mm square footprint (using single or multilayer spiral structures), with self resonant frequencies between 20GHz and 500 Mhz.
- Quality factor in these MCM-D inductors is determined by the inductor resistance at low frequencies, while the peak quality factor is related to the nature and dielectric structure of the substrate employed.
- High resistivity silicon substrates with inductors defined in an aluminiumm-polyimide structure can provide quality factors between about 5 and 20, depending upon the inductor structure and inductance value.
- the inductor device comprises a trimmable metallisation layer formed on the second major surface of said second substrate.
- the completed single or multilayer plated copper inductor structure is then coated with a suitable passivation (for example a layer of silicon nitride) or a metallic, non-solderable barrier layer material (for example chromium or titanium). If a nonconducting passivation layer is employed, then vias are opened in this layer at the locations where input and output connections are required.
- a suitable passivation for example a layer of silicon nitride
- a metallic, non-solderable barrier layer material for example chromium or titanium
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Coils Or Transformers For Communication (AREA)
- Magnetic Heads (AREA)
- Input Circuits Of Receivers And Coupling Of Receivers And Audio Equipment (AREA)
- Vehicle Body Suspensions (AREA)
- Semiconductor Integrated Circuits (AREA)
- Control Of Motors That Do Not Use Commutators (AREA)
Claims (8)
- Drosselspulen-Einrichtung für eine Anbringung auf einem Multichip-Modul, auf einer Direkt-Chip-Befestigungs-Anordnung oder auf einer Oberflächenanbringungs-Anordnung, wobei das Multichip-Modul, die Direkt-Chip-Befestigungs-Anordnung oder die Oberflächenanbringungs-Anordnung umfasst: ein erstes im wesentlichen planares Substrat (4) aus einem elektrisch isolierenden Material, wobei das erste Substrat darauf eine Vielzahl von elektrisch verbindenden Strukturen aufweist, dadurch gekennzeichnet, dass die Einrichtung ein zweites im wesentlichen planares Substrat (2) aus einem elektrisch isolierenden Material, welches erste und zweite gegenüberliegende Hauptoberflächen aufweist, eine spiralförmige Metallisierungsstruktur (1), die auf der ersten Hauptoberfläche des zweiten Substrats (2) ein induktives Element definierend gebildet ist, und eine Vielzahl von Lötbumps (3), die auf der ersten Hauptoberfläche gebildet sind, wobei wenigstens zwei der Lötbumps auf der spiralförmigen Metallisierungsstruktur (1) zum elektrischen Verbinden der spiralförmigen Metallisierungsstruktur mit jeweiligen der elektrisch verbindenden Strukturen auf dem ersten Substrat (4) gebildet sind.
- Drosselspulen-Einrichtung nach Anspruch 1, wobei eine trimmbare Metallisierungsschicht (6) auf der zweiten Hauptoberfläche des zweiten Substrats (2) gebildet ist.
- Drosselspulen-Einrichtung nach Anspruch 1, wobei die spiralförmige Metallisierungsstruktur (1) auf einer Schicht (5) aus einem Material mit geringer Permitivität, aufgebracht auf dem zweiten Substrat, gebildet ist.
- Drosselspulen-Einrichtung nach Anspruch 2, wobei die trimmbare Metallisierungsschicht (6) in einem konzentrischen Ringmuster gebildet ist.
- Drosselspulen-Einrichtung nach Anspruch 2, wobei die trimmbare Metallisierungsschicht (6) in einem spiralförmigen Muster gebildet ist.
- Drosselspulen-Einrichtung nach Anspruch 1, wobei wenigstens ein Teil der spiralförmigen Metallisierungsstruktur (1) mit einer nicht-lötbaren Metallisierungsschicht beschichtet ist.
- Drosselspulen-Einrichtung nach Anspruch 1, wobei wenigstens ein Teil der spiralförmigen Metallisierungsstruktur (1) mit einer Schicht aus einem elektrisch isolierenden Material beschichtet ist.
- Drosselspulen-Einrichtung nach Anspruch 1, wobei das zweite Substrat (2) ein Ferritmaterial ist.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB9415316A GB2292016B (en) | 1994-07-29 | 1994-07-29 | Inductor device |
| GB9415316 | 1994-07-29 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| EP0694932A1 EP0694932A1 (de) | 1996-01-31 |
| EP0694932B1 true EP0694932B1 (de) | 2003-02-26 |
Family
ID=10759075
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP95304759A Expired - Lifetime EP0694932B1 (de) | 1994-07-29 | 1995-07-07 | Drosselspuleanordnung |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP0694932B1 (de) |
| JP (1) | JPH0864422A (de) |
| AT (1) | ATE233428T1 (de) |
| DE (1) | DE69529709D1 (de) |
| GB (1) | GB2292016B (de) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19854234C1 (de) * | 1998-11-24 | 2000-06-21 | Bosch Gmbh Robert | Induktives Bauelement mit planarer Leitungsstruktur und Verfahren zur Herstellung desselben |
| US6310386B1 (en) * | 1998-12-17 | 2001-10-30 | Philips Electronics North America Corp. | High performance chip/package inductor integration |
| JP4005762B2 (ja) * | 1999-06-30 | 2007-11-14 | 株式会社東芝 | 集積回路装置及びその製造方法 |
| AU2001274414A1 (en) * | 2000-06-30 | 2002-01-08 | Jds Uniphase Corporation | Microelectronic packages including reactive components, and methods of fabricating the same |
| US6894593B2 (en) * | 2003-02-12 | 2005-05-17 | Moog Inc. | Torque motor |
| JP4291164B2 (ja) | 2004-01-08 | 2009-07-08 | 富士通メディアデバイス株式会社 | 弾性表面波装置 |
| JP2008198923A (ja) * | 2007-02-15 | 2008-08-28 | Matsushita Electric Ind Co Ltd | コイル部品 |
| US8539666B2 (en) | 2011-11-10 | 2013-09-24 | Harris Corporation | Method for making an electrical inductor and related inductor devices |
| CN110797333B (zh) * | 2018-08-01 | 2026-05-08 | 台达电子工业股份有限公司 | 功率模块及其制造方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2079066B (en) * | 1980-06-23 | 1983-09-21 | Hull Corp | Trimmable electrical inductors |
| JPS58196005A (ja) * | 1982-05-10 | 1983-11-15 | Toutsuu:Kk | インダクタおよびその製造方法 |
| JPS63116410A (ja) * | 1986-11-05 | 1988-05-20 | Fujikura Ltd | プリントコイルとそのインダクタンス調整方法 |
| GB8902431D0 (en) * | 1989-02-03 | 1989-03-22 | Plessey Co Plc | Flip chip solder bond structure for devices with gold based metallisation |
| EP0398485B1 (de) * | 1989-05-16 | 1995-08-09 | Gec-Marconi Limited | Verfahren zur Herstellung einer Flip-Chip-Lötstruktur für Anordnungen mit Gold-Metallisierung |
| US5349743A (en) * | 1991-05-02 | 1994-09-27 | At&T Bell Laboratories | Method of making a multilayer monolithic magnet component |
| EP0529503A1 (de) * | 1991-08-22 | 1993-03-03 | Hewlett-Packard Company | Flip-chip-Vorrichtung mit flexibler Befestigung |
| US5363080A (en) * | 1991-12-27 | 1994-11-08 | Avx Corporation | High accuracy surface mount inductor |
| JPH06140267A (ja) * | 1992-10-29 | 1994-05-20 | Kyocera Corp | インダクタンスの調整方法 |
| GB2290171B (en) * | 1994-06-03 | 1998-01-21 | Plessey Semiconductors Ltd | Inductor chip device |
-
1994
- 1994-07-29 GB GB9415316A patent/GB2292016B/en not_active Expired - Fee Related
-
1995
- 1995-07-07 DE DE69529709T patent/DE69529709D1/de not_active Expired - Lifetime
- 1995-07-07 EP EP95304759A patent/EP0694932B1/de not_active Expired - Lifetime
- 1995-07-07 AT AT95304759T patent/ATE233428T1/de not_active IP Right Cessation
- 1995-07-25 JP JP7209222A patent/JPH0864422A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0864422A (ja) | 1996-03-08 |
| GB9415316D0 (en) | 1994-09-21 |
| ATE233428T1 (de) | 2003-03-15 |
| GB2292016B (en) | 1998-07-22 |
| GB2292016A (en) | 1996-02-07 |
| EP0694932A1 (de) | 1996-01-31 |
| DE69529709D1 (de) | 2003-04-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0694933B1 (de) | Struktur einer abgleichbaren Drosselspule | |
| US5747870A (en) | Multi-chip module inductor structure | |
| US5478773A (en) | Method of making an electronic device having an integrated inductor | |
| EP0685857B1 (de) | Chip-induktivität Anordnung | |
| US6727571B2 (en) | Inductor and method for adjusting the inductance thereof | |
| KR100885352B1 (ko) | 반도체 장치 및 반도체 장치의 제조 방법 | |
| US20030162386A1 (en) | Semiconductor device and its manufacturing method | |
| CA1182583A (en) | Thin film discrete decoupling capacitor | |
| US5773897A (en) | Flip chip monolithic microwave integrated circuit with mushroom-shaped, solder-capped, plated metal bumps | |
| JP2006287196A (ja) | 高qプレーナインダクタおよびipd応用例 | |
| US20080090406A1 (en) | Via attached to a bond pad utilizing a tapered interconnect | |
| EP0694932A1 (de) | Drosselspuleanordnung | |
| KR100844063B1 (ko) | 전자 기판의 제조 방법, 전자 기판, 및 전자 기기 | |
| US20040164819A1 (en) | Variable capacitance circuit, variable capacitance thin film capacitor and radio frequency device | |
| CN110690131A (zh) | 一种具有大键合力的三维异构焊接方法 | |
| US6159817A (en) | Multi-tap thin film inductor | |
| CN110739236A (zh) | 一种具有防溢锡结构的新三维异构堆叠方法 | |
| CN117769126A (zh) | 高共面度的电子元件及其制作方法 | |
| US5874199A (en) | Method of forming oversized solder bumps | |
| US12620530B2 (en) | Device and process for implementing silicon carbide (SiC) surface mount devices | |
| KR100348250B1 (ko) | 마이크로 수동소자의 제조 방법 | |
| CN119153232B (zh) | 电容芯片结构以及制造方法 | |
| WO2001004953A1 (en) | Method for manufacturing a semiconductor device having a metal layer floating over a substrate | |
| WO2002001638A2 (en) | Microelectronic packages including reactive components, and methods of fabricating the same | |
| JP2005302907A (ja) | インダクタ |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
| AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AT DE ES FR IT |
|
| 17P | Request for examination filed |
Effective date: 19960716 |
|
| RAP1 | Party data changed (applicant data changed or rights of an application transferred) |
Owner name: MITEL SEMICONDUCTOR LIMITED |
|
| 17Q | First examination report despatched |
Effective date: 19981209 |
|
| RAP1 | Party data changed (applicant data changed or rights of an application transferred) |
Owner name: INTARSIA CORPORATION |
|
| RBV | Designated contracting states (corrected) |
Designated state(s): AT DE ES FR IT |
|
| GRAG | Despatch of communication of intention to grant |
Free format text: ORIGINAL CODE: EPIDOS AGRA |
|
| GRAG | Despatch of communication of intention to grant |
Free format text: ORIGINAL CODE: EPIDOS AGRA |
|
| GRAH | Despatch of communication of intention to grant a patent |
Free format text: ORIGINAL CODE: EPIDOS IGRA |
|
| GRAH | Despatch of communication of intention to grant a patent |
Free format text: ORIGINAL CODE: EPIDOS IGRA |
|
| GRAA | (expected) grant |
Free format text: ORIGINAL CODE: 0009210 |
|
| AK | Designated contracting states |
Designated state(s): AT DE ES FR IT |
|
| PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: IT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT;WARNING: LAPSES OF ITALIAN PATENTS WITH EFFECTIVE DATE BEFORE 2007 MAY HAVE OCCURRED AT ANY TIME BEFORE 2007. THE CORRECT EFFECTIVE DATE MAY BE DIFFERENT FROM THE ONE RECORDED. Effective date: 20030226 Ref country code: FR Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20030226 Ref country code: AT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20030226 |
|
| REF | Corresponds to: |
Ref document number: 69529709 Country of ref document: DE Date of ref document: 20030403 Kind code of ref document: P |
|
| PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: DE Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20030527 |
|
| PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: ES Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20030828 |
|
| PLBE | No opposition filed within time limit |
Free format text: ORIGINAL CODE: 0009261 |
|
| STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT |
|
| EN | Fr: translation not filed | ||
| 26N | No opposition filed |
Effective date: 20031127 |