EP0853818A4 - Niederspannungs-kurzkanal-graben-dmos-transistor - Google Patents

Niederspannungs-kurzkanal-graben-dmos-transistor

Info

Publication number
EP0853818A4
EP0853818A4 EP96927387A EP96927387A EP0853818A4 EP 0853818 A4 EP0853818 A4 EP 0853818A4 EP 96927387 A EP96927387 A EP 96927387A EP 96927387 A EP96927387 A EP 96927387A EP 0853818 A4 EP0853818 A4 EP 0853818A4
Authority
EP
European Patent Office
Prior art keywords
low
mos transistor
short channel
voltage short
diffusion mos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP96927387A
Other languages
English (en)
French (fr)
Other versions
EP0853818A1 (de
Inventor
Dorman C Pitzer
Fwu-Iuan Hshieh
Mike F Chang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Vishay Siliconix Inc
Original Assignee
Siliconix Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siliconix Inc filed Critical Siliconix Inc
Publication of EP0853818A1 publication Critical patent/EP0853818A1/de
Publication of EP0853818A4 publication Critical patent/EP0853818A4/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform
EP96927387A 1995-08-21 1996-08-15 Niederspannungs-kurzkanal-graben-dmos-transistor Withdrawn EP0853818A4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US53715695A 1995-08-21 1995-08-21
US537156 1995-08-21
PCT/US1996/013039 WO1997007548A1 (en) 1995-08-21 1996-08-15 Low voltage short channel trench dmos transistor

Publications (2)

Publication Number Publication Date
EP0853818A1 EP0853818A1 (de) 1998-07-22
EP0853818A4 true EP0853818A4 (de) 1998-11-11

Family

ID=24141458

Family Applications (1)

Application Number Title Priority Date Filing Date
EP96927387A Withdrawn EP0853818A4 (de) 1995-08-21 1996-08-15 Niederspannungs-kurzkanal-graben-dmos-transistor

Country Status (3)

Country Link
EP (1) EP0853818A4 (de)
AU (1) AU6722396A (de)
WO (1) WO1997007548A1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6429481B1 (en) * 1997-11-14 2002-08-06 Fairchild Semiconductor Corporation Field effect transistor and method of its manufacture
DE19935442C1 (de) 1999-07-28 2000-12-21 Siemens Ag Verfahren zum Herstellen eines Trench-MOS-Leistungstransistors
DE10009345C1 (de) * 2000-02-28 2001-07-19 Infineon Technologies Ag Feldeffekt-Transistoranordnung mit hoher Latch-up-Festigkeit und Verfahren zu deren Herstellung
US6312993B1 (en) * 2000-02-29 2001-11-06 General Semiconductor, Inc. High speed trench DMOS
US6921939B2 (en) * 2000-07-20 2005-07-26 Fairchild Semiconductor Corporation Power MOSFET and method for forming same using a self-aligned body implant
JP4813762B2 (ja) * 2003-12-25 2011-11-09 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
US8698232B2 (en) 2010-01-04 2014-04-15 International Rectifier Corporation Semiconductor device including a voltage controlled termination structure and method for fabricating same

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5674960A (en) * 1979-11-22 1981-06-20 Toshiba Corp Semiconductor integrated circuit
US4369564A (en) * 1979-10-29 1983-01-25 American Microsystems, Inc. VMOS Memory cell and method for making same
US4767722A (en) * 1986-03-24 1988-08-30 Siliconix Incorporated Method for making planar vertical channel DMOS structures
US4814839A (en) * 1977-01-11 1989-03-21 Zaidan Hojin Handotai Kenkyu Shinkokai Insulated gate static induction transistor and integrated circuit including same
US5021845A (en) * 1985-08-30 1991-06-04 Texas Instruments Incorporated Semiconductor device and process fabrication thereof
US5298780A (en) * 1992-02-17 1994-03-29 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method of fabricating same
US5385853A (en) * 1992-12-02 1995-01-31 International Business Machines Corporation Method of fabricating a metal oxide semiconductor heterojunction field effect transistor (MOSHFET)
EP0717450A2 (de) * 1994-12-13 1996-06-19 Mitsubishi Denki Kabushiki Kaisha Vertikale Halbleiteranordnung mit isoliertem Gate und Vefahren zur Herstellung

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL184551C (nl) * 1978-07-24 1989-08-16 Philips Nv Veldeffekttransistor met geisoleerde stuurelektrode.
US5910669A (en) * 1992-07-24 1999-06-08 Siliconix Incorporated Field effect Trench transistor having lightly doped epitaxial region on the surface portion thereof
US5341011A (en) * 1993-03-15 1994-08-23 Siliconix Incorporated Short channel trenched DMOS transistor

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4814839A (en) * 1977-01-11 1989-03-21 Zaidan Hojin Handotai Kenkyu Shinkokai Insulated gate static induction transistor and integrated circuit including same
US4369564A (en) * 1979-10-29 1983-01-25 American Microsystems, Inc. VMOS Memory cell and method for making same
JPS5674960A (en) * 1979-11-22 1981-06-20 Toshiba Corp Semiconductor integrated circuit
US5021845A (en) * 1985-08-30 1991-06-04 Texas Instruments Incorporated Semiconductor device and process fabrication thereof
US4767722A (en) * 1986-03-24 1988-08-30 Siliconix Incorporated Method for making planar vertical channel DMOS structures
US5298780A (en) * 1992-02-17 1994-03-29 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method of fabricating same
US5385853A (en) * 1992-12-02 1995-01-31 International Business Machines Corporation Method of fabricating a metal oxide semiconductor heterojunction field effect transistor (MOSHFET)
EP0717450A2 (de) * 1994-12-13 1996-06-19 Mitsubishi Denki Kabushiki Kaisha Vertikale Halbleiteranordnung mit isoliertem Gate und Vefahren zur Herstellung

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 005, no. 141 (E - 073) 5 September 1981 (1981-09-05) *
See also references of WO9707548A1 *

Also Published As

Publication number Publication date
WO1997007548A1 (en) 1997-02-27
AU6722396A (en) 1997-03-12
EP0853818A1 (de) 1998-07-22

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