JPS5674960A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS5674960A
JPS5674960A JP15073279A JP15073279A JPS5674960A JP S5674960 A JPS5674960 A JP S5674960A JP 15073279 A JP15073279 A JP 15073279A JP 15073279 A JP15073279 A JP 15073279A JP S5674960 A JPS5674960 A JP S5674960A
Authority
JP
Japan
Prior art keywords
substrate
layer
integrated circuit
polysilicon
inverter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15073279A
Other languages
Japanese (ja)
Inventor
Takayuki Otani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP15073279A priority Critical patent/JPS5674960A/en
Publication of JPS5674960A publication Critical patent/JPS5674960A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain an inverter with a small area and satisfactory characteristics by vertically forming an N-channel transistor for driver and a load resistance on the surface of a substrate with regard to the VMOS integrated circuit. CONSTITUTION:An N-substrate is provided as a source and an area close to the side of a P-layer 2 is overlapped so taht ''punch-through'' phenomenon which is apt to occur in a short channel may be prevented. In addition, an N-layer 4 is overlapped to form a drain and a gate electrode 5 is provided on a slope of ''V'' groove through the intermediary of a thin gate insulative film. An electrode 5 is made of polysilicon or aluminium. A high resistance element 6 is created vertically on the surface of the substrate by vertically attaching polysilicon, etc. on the surface of the substrate. Then this element is connected to metal wiring 8 through a low-resistance area 7. In addition, each layer is covered with an insulative layer 9. If a positive potential is applied to the wiring 8 and the substrate 1 is grounded, an inverter which enables a gate 5 to output a drain 4 with an input is obtained. Besides, the length of a channel can be prolonged, thus enhancing a current drive capability.
JP15073279A 1979-11-22 1979-11-22 Semiconductor integrated circuit Pending JPS5674960A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15073279A JPS5674960A (en) 1979-11-22 1979-11-22 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15073279A JPS5674960A (en) 1979-11-22 1979-11-22 Semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS5674960A true JPS5674960A (en) 1981-06-20

Family

ID=15503195

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15073279A Pending JPS5674960A (en) 1979-11-22 1979-11-22 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS5674960A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4851889A (en) * 1986-12-03 1989-07-25 Fuji Electric Co., Ltd. Insulated gate field effect transistor with vertical channel
US5164325A (en) * 1987-10-08 1992-11-17 Siliconix Incorporated Method of making a vertical current flow field effect transistor
EP0853818A4 (en) * 1995-08-21 1998-11-11 Siliconix Inc LOW-VOLTAGE SHORT CHANNEL DUAL DIFFUSION MOS TRANSISTOR
US5877538A (en) * 1995-06-02 1999-03-02 Silixonix Incorporated Bidirectional trench gated power MOSFET with submerged body bus extending underneath gate trench
US6096608A (en) * 1997-06-30 2000-08-01 Siliconix Incorporated Bidirectional trench gated power mosfet with submerged body bus extending underneath gate trench
JP2014033119A (en) * 2012-08-06 2014-02-20 Mitsubishi Electric Corp Semiconductor device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4851889A (en) * 1986-12-03 1989-07-25 Fuji Electric Co., Ltd. Insulated gate field effect transistor with vertical channel
US5164325A (en) * 1987-10-08 1992-11-17 Siliconix Incorporated Method of making a vertical current flow field effect transistor
US5576245A (en) * 1987-10-08 1996-11-19 Siliconix Incorporated Method of making vertical current flow field effect transistor
US5877538A (en) * 1995-06-02 1999-03-02 Silixonix Incorporated Bidirectional trench gated power MOSFET with submerged body bus extending underneath gate trench
EP0853818A4 (en) * 1995-08-21 1998-11-11 Siliconix Inc LOW-VOLTAGE SHORT CHANNEL DUAL DIFFUSION MOS TRANSISTOR
US6096608A (en) * 1997-06-30 2000-08-01 Siliconix Incorporated Bidirectional trench gated power mosfet with submerged body bus extending underneath gate trench
JP2014033119A (en) * 2012-08-06 2014-02-20 Mitsubishi Electric Corp Semiconductor device

Similar Documents

Publication Publication Date Title
WO1996016432A3 (en) Channel or source/drain structure of mosfet and method for fabricating the same
EP0348916A3 (en) Mosfet equivalent voltage drive semiconductor device
JPS55151363A (en) Mos semiconductor device and fabricating method of the same
JPS56165359A (en) Semiconductor device
JPS56110264A (en) High withstand voltage mos transistor
JPS5654064A (en) Semiconductor device
JPS5591874A (en) V-groove structure mosfet
JPS54137286A (en) Semiconductor device
JPS57121271A (en) Field effect transistor
JPS56150858A (en) Semiconductor device and manufacture thereof
JPS56133871A (en) Mos field effect semiconductor device with high breakdown voltage
JPS56165358A (en) Semiconductor device
JPS6459958A (en) Vertical field-effect transistor
JPS57180177A (en) Semiconductor device
JPS566464A (en) Semiconductor device and manufacture thereof
JPS6414960A (en) Semiconductor element
JPS56165356A (en) Mos semiconductor device
JPS6486561A (en) Vertical mos transistor
JPS5688366A (en) Semiconductor device
JPS56101758A (en) Semiconductor device
JPS57192083A (en) Semiconductor device
JPS57178359A (en) Semiconductor integrated circuit device
JPS56147467A (en) Cmos semiconductor device and manufacture thereof
JPS5736865A (en) Semiconductor device
JPS5752168A (en) Mos type semiconductor device