EP0865663A1 - Chambre de traitement a plasma hf ou chambre de revetement pecvd, leurs utilisations et procede de revetement de cd - Google Patents

Chambre de traitement a plasma hf ou chambre de revetement pecvd, leurs utilisations et procede de revetement de cd

Info

Publication number
EP0865663A1
EP0865663A1 EP96937971A EP96937971A EP0865663A1 EP 0865663 A1 EP0865663 A1 EP 0865663A1 EP 96937971 A EP96937971 A EP 96937971A EP 96937971 A EP96937971 A EP 96937971A EP 0865663 A1 EP0865663 A1 EP 0865663A1
Authority
EP
European Patent Office
Prior art keywords
chamber
substrate
coating
generator
arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP96937971A
Other languages
German (de)
English (en)
Inventor
Jürgen WEICHART
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
OC Oerlikon Balzers AG
Original Assignee
Balzers AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Balzers AG filed Critical Balzers AG
Publication of EP0865663A1 publication Critical patent/EP0865663A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32238—Windows
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma

Definitions

  • the present invention is based on problems and needs which have arisen in the production of CDs.
  • the resulting solutions can, however, be used in a fundamental way for other applications. Therefore, in the present description, the needs and problems in CD production are specifically taken as a starting point. Approaches according to the invention are described in order to then, generally speaking, show how the principles found can generally be used.
  • the aforementioned coating is also foreign to the species.
  • the above-mentioned problems are dealt with in their formation according to the Characteristic of claim 1 solved, ie in that the high-frequency discharge circuit also includes the substrate as a capacitive coupling element.
  • a metal-coated dielectric substrate also acts as an electrode with respect to high-frequency plasmas in the lower frequency range.
  • the basic finding according to claim 1 is that the required high-frequency power can thereby be kept low, which solves the problem of the temperature load. At the same time, however, such high coating rates are achieved that the required effective protective layers can be removed in extremely short coating times, even of one second.
  • deposited protective layers with a comparable layer thickness are even harder than conventional lacquer layers. Furthermore, the layers are deposited practically exclusively on the high-frequency coupling surface acting substrate surface to be coated.
  • a chamber which is optimized in every respect results from the simultaneous implementation of the coupling technique according to claim 1 on the chamber with minimum volume according to claim 2.
  • a protective coating method according to the invention for storage disks, in particular optical storage disks, such as CDs, is therefore also created, which is embodied in the continuous production process as a vacuum coating method and is therefore of the same type as the fast sputtering method usually provided for metal coating .
  • a high-frequency PECVD method is preferably used, in which the high-frequency plasma discharge energy is coupled into the process space via the substrate.
  • PECVD designed coating chamber according to the invention schematically and in cross section;
  • FIG. 2 shows a further coating chamber according to the invention specifically designed for the Hf-PECVD protective coating of CDs
  • FIG. 4 schematically, in a representation analogous to FIG. 3, the coupling technique used in the chamber according to FIG. 2 on a substrate without a metal coating;
  • FIG. 5 in a representation analogous to Figs. 3 and 4, a further coupling technique according to the invention
  • FIG. 6 schematically, an Hf-PECVD coating chamber according to the invention, which, combined, has the features according to the invention of the chamber according to FIG. 1 and the chamber according to FIG. 2.
  • the chamber according to the invention around the central axis C is extremely flat, in the special case as a flat cylinder.
  • the two-dimensional chamber walls 5 lying opposite each other with respect to the central axis C are essentially identical and carry, centrally, each pumping nozzle 7, a receptacle 9 for the periphery of the substrates to be coated 1. Because the chamber itself is designed according to the invention, which is not the case when the substrates 1 to be coated are picked up, the substrates 1 are shown in dashed lines.
  • the receptacles 9 each define receptacle surfaces 11 for the substrates 1 to be raised.
  • the pump nozzles 7 are designed such that they protrude through the openings provided in the substrate and, if necessary, also serve to hold or position the substrate with the receptacles 9.
  • the chamber walls 5 are spaced such that the receiving surfaces 11 for the substrates 1 are at a distance A which must be at least large enough to avoid uncontrollable cavity discharges between the plates, which is at least 10 mm.
  • the deposition on the cylinder jacket surfaces should be as small as possible, so that the distance A should be smaller than the plate radius.
  • gas feeds 13 which are connected to a reactive gas tank (not shown), open into the area of both walls 5, preferably distributed.
  • Pump units (not shown) are connected to the pumping nozzle 7.
  • the latter is connected to a generator 19 for maintaining the plasma discharge in the process space 20, as are preferably both walls 5.
  • the generator 19 can be designed as a DC generator or as an AC generator or emit a superimposition of the DC + AC signal or can emit a pulsating signal.
  • the layer thickness measured on a measuring circle with a radius of 20 mm on the CD, was 430 nm, and 436 nm on a measuring circle with a radius of 55 mm.
  • the polycarbonate CD substrate showed no thermal impairment whatsoever.
  • a disadvantage of the chamber presented in FIG. 1 is that the preferably annular electrode 17 is also coated.
  • the coating rate determined on the electrode 17 in the example mentioned above was approximately three times higher than on the substrate. In the event of prolonged operation without cleaning, problems can therefore arise as a result of flaking layers from the electrode, which can contaminate the substrate coating and / or disrupt the plasma discharge.
  • FIG. 1 This shows the chamber according to the invention, again specifically for the protective coating of circular disk-shaped dielectric substrates, in particular storage disks with plastic substrates, again in particular for CDs.
  • the pumping nozzle 7 is designed such that it protrudes through the center opening of the inserted substrate 1.
  • the reactive gas inlets 13 open, preferably distributed, whereby in the embodiment shown here, in contrast to that according to FIG. 1, which is not mandatory, however, a separate gas inlet 13a for the reactive gas 0 2 is provided with a separate pump nozzle 7a.
  • the remaining metallic parts of the chamber are connected to the reference potential, in particular ground potential.
  • both socket 7 and flange 13a are preferably electrically insulated from the chamber wall or formed as an insulator (not shown), the chamber wall is at reference potential.
  • the electrode 21 on the one hand, the plastic body of the substrate 1 on the other hand and the metal coating 3 act as coupling capacitance, through which the high-frequency energy is transmitted into the Reaction space 20 is coupled.
  • the metal layer 3 or its surface acts as an equipotential surface, the uniformity of the coating thickness distribution is very good, for example with deviations of at most 4% from the mean.
  • the deposition rate on reactor parts not to be coated was measured at a distance of 1/30 of the CD coating rate at a distance from the CD surface to be coated.
  • optical storage disks such as CDs
  • Base pressure ⁇ 8Pa, which can be achieved in a very short time with a two-stage rotary vane pump.
  • Process pressure 30 to 10OPa, preferably approx. 60Pa.
  • Monomer preferably a siloxane compound, such as, for example, hexamethyldisiloxane or divinyltetramethyldisiloxane c, preferably supplied on the circumference of the substrate to be coated.
  • siloxane compound such as, for example, hexamethyldisiloxane or divinyltetramethyldisiloxane c
  • Another reactive gas preferably oxygen, not necessarily supplied at the periphery of the substrate to be coated.
  • Plasma operating frequency 1 to 500 MHz, preferably 13.56 MHz for reasons of availability.
  • Process time 1 to 15sec.
  • a plasma pretreatment in pure oxygen is preferably carried out for a process time of 0.1 to isec.
  • the coating process carried out with the chambers according to the invention runs at relatively high pressure and is not sensitive to residual air, i.e. as mentioned, a two-stage rotary vane pump is sufficient for pumping.
  • the high-frequency power required is low, for example 600W, which enables corresponding savings, inter alia when the generator is provided.
  • Effective corrosion protection layers can be produced in very short process cycle times of lsec. With a comparable layer thickness, the layers are harder than wet-applied lacquer layers. The deposition takes place practically only as desired on the substrate.
  • the chambers, both according to Fig. 1 and Fig. 2 can be easily set up for automatic handling.
  • the procedure according to FIG. 2 with high-frequency coupling through the substrate can be used for many other high-frequency plasma treatment methods, e.g. be used for reactive etching processes of the substrate, further e.g. for the deposition of dielectric intermediate layers or metal organic compounds as metallic layers on dielectric substrates.
  • microwave energy can be injected into the process space 20 through the dielectric substrate 1, provided that it is not metallically coated, where the substrate 1 is non-conductively coated or etched.
  • a non-metallic precoated substrate 1 can be treated by coupling the high-frequency energy of the generator 19 into the process space 20 via the electrode 21 and thereby acting as a capacitance counterelectrode with respect to the electrode 21. It should be emphasized that, as shown specifically in FIG. 5, in the chamber according to FIG. 2 as well as in FIG. 4 the electrode 21 does not have to be exposed against the process space 20 in order to contact the substrate 1 directly. It can be covered electrically.
  • the coupling method according to the invention can also be carried out if, as with the CD, the surface to be coated and / or the back of the substrate is metal-coated.
  • the dielectric carrier of the substrates takes on the function of a coupling capacitance in an HF discharge.
  • the resulting soap-bias voltage on the metal layer has an advantageous effect on increasing the coating rate and its uniformity - by forming an equipotential surface.
  • the electrode surface or its projection should not be larger than the surface of the metal layer.
  • FIG. 6 shows a further preferred embodiment of a chamber according to the invention, which results from the consideration of FIGS. 1 and 2 without further explanation.
  • the coupling principle via the substrate 1 according to FIG. 2 is used on the chamber according to FIG. 1.
  • the two coupling electrodes 21 provided on the chamber according to FIG. 6 are preferably operated by the same high-frequency generator if a symmetrical discharge, as in the vast majority of cases, is to be achieved, as shown in dashed lines at 19a.
  • the flanges 13a and the connecting piece 7, what has been said in relation to FIG. 2 applies.

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

L'invention a pour objet une chambre de revêtement prévue pour doter des substrats diélectriques de revêtements protecteurs, tout en maintenant des températures appropriées pour des matières plastiques pendant de courtes durées de cycles de travail. Un plasma haute fréquence est produit à travers le substrat (1) par couplage d'énergie haute fréquence à partir d'un générateur (19), les surfaces marginales opposées de l'enceinte de traitement (20) étant formées par les surfaces sensiblement fermées des substrats à revêtir.
EP96937971A 1995-12-08 1996-11-27 Chambre de traitement a plasma hf ou chambre de revetement pecvd, leurs utilisations et procede de revetement de cd Withdrawn EP0865663A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CH347795 1995-12-08
CH3477/95 1995-12-08
PCT/CH1996/000420 WO1997022136A1 (fr) 1995-12-08 1996-11-27 Chambre de traitement a plasma hf ou chambre de revetement pecvd, leurs utilisations et procede de revetement de cd

Publications (1)

Publication Number Publication Date
EP0865663A1 true EP0865663A1 (fr) 1998-09-23

Family

ID=4256821

Family Applications (1)

Application Number Title Priority Date Filing Date
EP96937971A Withdrawn EP0865663A1 (fr) 1995-12-08 1996-11-27 Chambre de traitement a plasma hf ou chambre de revetement pecvd, leurs utilisations et procede de revetement de cd

Country Status (4)

Country Link
US (1) US6432492B2 (fr)
EP (1) EP0865663A1 (fr)
JP (1) JP2000501785A (fr)
WO (1) WO1997022136A1 (fr)

Families Citing this family (12)

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Publication number Priority date Publication date Assignee Title
US7387081B2 (en) * 2003-01-23 2008-06-17 3M Innovative Properties Company Plasma reactor including helical electrodes
US20040146262A1 (en) * 2003-01-23 2004-07-29 3M Innovative Properties Company Frozen-fluid fiber guide
EP2256782B1 (fr) * 2009-05-25 2018-08-29 Applied Materials, Inc. Source de dépôt de plasma et procédé pour déposer des films minces
US8741394B2 (en) 2010-03-25 2014-06-03 Novellus Systems, Inc. In-situ deposition of film stacks
US9028924B2 (en) 2010-03-25 2015-05-12 Novellus Systems, Inc. In-situ deposition of film stacks
KR102025441B1 (ko) 2012-04-06 2019-09-25 노벨러스 시스템즈, 인코포레이티드 증착 후 소프트 어닐링
US9117668B2 (en) 2012-05-23 2015-08-25 Novellus Systems, Inc. PECVD deposition of smooth silicon films
US9388491B2 (en) 2012-07-23 2016-07-12 Novellus Systems, Inc. Method for deposition of conformal films with catalysis assisted low temperature CVD
US8895415B1 (en) 2013-05-31 2014-11-25 Novellus Systems, Inc. Tensile stressed doped amorphous silicon
CN106282973A (zh) * 2015-06-26 2017-01-04 核工业西南物理研究院 用于管内壁镀膜的装置及方法
US10802588B2 (en) * 2015-09-17 2020-10-13 Qualcomm Incorporated Deflecting film with mechanical protrusion for actuation and tactile feedback
CN109801824B (zh) * 2017-11-15 2022-07-22 北京北方华创微电子装备有限公司 介质窗组件及反应腔室

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JPS5930130B2 (ja) * 1979-09-20 1984-07-25 富士通株式会社 気相成長方法
JPS60119784A (ja) * 1983-12-01 1985-06-27 Kanegafuchi Chem Ind Co Ltd 絶縁金属基板の製法およびそれに用いる装置
JP2635021B2 (ja) * 1985-09-26 1997-07-30 宣夫 御子柴 堆積膜形成法及びこれに用いる装置
US5275850A (en) * 1988-04-20 1994-01-04 Hitachi, Ltd. Process for producing a magnetic disk having a metal containing hard carbon coating by plasma chemical vapor deposition under a negative self bias
US4877641A (en) * 1988-05-31 1989-10-31 Olin Corporation Process for plasma depositing silicon nitride and silicon dioxide films onto a substrate
US5192717A (en) * 1989-04-28 1993-03-09 Canon Kabushiki Kaisha Process for the formation of a polycrystalline semiconductor film by microwave plasma chemical vapor deposition method
DE4022708A1 (de) * 1990-07-17 1992-04-02 Balzers Hochvakuum Aetz- oder beschichtungsanlagen
JP3008038B2 (ja) 1991-08-09 2000-02-14 住友金属工業株式会社 平行平板型プラズマ装置
JPH05243160A (ja) * 1992-02-28 1993-09-21 Nec Yamagata Ltd 半導体デバイス製造用プラズマｃｖｄ装置
DE4301189C2 (de) * 1993-01-19 2000-12-14 Leybold Ag Vorrichtung zum Beschichten von Substraten
CH687986A5 (de) * 1993-05-03 1997-04-15 Balzers Hochvakuum Plasmabehandlungsanlage und Verfahren zu deren Betrieb.
EP0626683B1 (fr) 1993-05-27 1999-08-11 Canon Kabushiki Kaisha Appareil de traitement par des micro-ondes et procédé de fabrication d'un film inorganique et diélectrique
DE69408405T2 (de) * 1993-11-11 1998-08-20 Nissin Electric Co Ltd Plasma-CVD-Verfahren und Vorrichtung
JPH07161493A (ja) * 1993-12-08 1995-06-23 Fujitsu Ltd プラズマ発生装置及び方法
JP3571785B2 (ja) * 1993-12-28 2004-09-29 キヤノン株式会社 堆積膜形成方法及び堆積膜形成装置
JP3387616B2 (ja) * 1994-04-18 2003-03-17 キヤノン株式会社 プラズマ処理装置

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Also Published As

Publication number Publication date
US6432492B2 (en) 2002-08-13
JP2000501785A (ja) 2000-02-15
WO1997022136A1 (fr) 1997-06-19
US20010007245A1 (en) 2001-07-12

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