EP0913833A3 - Dispositif de mémoire non-volatile à semi-conducteur - Google Patents

Dispositif de mémoire non-volatile à semi-conducteur Download PDF

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Publication number
EP0913833A3
EP0913833A3 EP98308874A EP98308874A EP0913833A3 EP 0913833 A3 EP0913833 A3 EP 0913833A3 EP 98308874 A EP98308874 A EP 98308874A EP 98308874 A EP98308874 A EP 98308874A EP 0913833 A3 EP0913833 A3 EP 0913833A3
Authority
EP
European Patent Office
Prior art keywords
memory cell
voltage
control gate
drain
bit lines
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP98308874A
Other languages
German (de)
English (en)
Other versions
EP0913833A2 (fr
EP0913833B1 (fr
Inventor
Yasuaki Hirano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of EP0913833A2 publication Critical patent/EP0913833A2/fr
Publication of EP0913833A3 publication Critical patent/EP0913833A3/fr
Application granted granted Critical
Publication of EP0913833B1 publication Critical patent/EP0913833B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0491—Virtual ground arrays
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
EP98308874A 1997-10-30 1998-10-29 Dispositif de mémoire non-volatile à semi-conducteur Expired - Lifetime EP0913833B1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP29916797A JP3558510B2 (ja) 1997-10-30 1997-10-30 不揮発性半導体記憶装置
JP29916797 1997-10-30
JP299167/97 1997-10-30

Publications (3)

Publication Number Publication Date
EP0913833A2 EP0913833A2 (fr) 1999-05-06
EP0913833A3 true EP0913833A3 (fr) 1999-10-06
EP0913833B1 EP0913833B1 (fr) 2005-12-07

Family

ID=17869001

Family Applications (1)

Application Number Title Priority Date Filing Date
EP98308874A Expired - Lifetime EP0913833B1 (fr) 1997-10-30 1998-10-29 Dispositif de mémoire non-volatile à semi-conducteur

Country Status (6)

Country Link
US (1) US6067251A (fr)
EP (1) EP0913833B1 (fr)
JP (1) JP3558510B2 (fr)
KR (1) KR19990037481A (fr)
DE (1) DE69832683T2 (fr)
TW (1) TW415070B (fr)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10008002C2 (de) * 2000-02-22 2003-04-10 X Fab Semiconductor Foundries Split-gate-Flash-Speicherelement, Anordnung von Split-gate-Flash-Speicherelementen und Methode zum Löschen derselben
JP2002026154A (ja) 2000-07-11 2002-01-25 Sanyo Electric Co Ltd 半導体メモリおよび半導体装置
DE60133619T2 (de) * 2000-12-05 2009-06-10 Halo Lsi Design And Device Technology Inc. Programmier- und Löschverfahren in Zwilling-MONOS-Zellenspeichern
US7057938B2 (en) * 2002-03-29 2006-06-06 Macronix International Co., Ltd. Nonvolatile memory cell and operating method
US6649453B1 (en) * 2002-08-29 2003-11-18 Micron Technology, Inc. Contactless uniform-tunneling separate p-well (CUSP) non-volatile memory array architecture, fabrication and operation
US7151692B2 (en) * 2004-01-27 2006-12-19 Macronix International Co., Ltd. Operation scheme for programming charge trapping non-volatile memory
US7075828B2 (en) * 2004-04-26 2006-07-11 Macronix International Co., Intl. Operation scheme with charge balancing erase for charge trapping non-volatile memory
CN100463138C (zh) * 2004-04-26 2009-02-18 旺宏电子股份有限公司 电荷陷入非易失性存储器的电荷平衡操作方法
US7133313B2 (en) * 2004-04-26 2006-11-07 Macronix International Co., Ltd. Operation scheme with charge balancing for charge trapping non-volatile memory
US7209390B2 (en) * 2004-04-26 2007-04-24 Macronix International Co., Ltd. Operation scheme for spectrum shift in charge trapping non-volatile memory
US7164603B2 (en) * 2004-04-26 2007-01-16 Yen-Hao Shih Operation scheme with high work function gate and charge balancing for charge trapping non-volatile memory
US7190614B2 (en) * 2004-06-17 2007-03-13 Macronix International Co., Ltd. Operation scheme for programming charge trapping non-volatile memory
US20060113586A1 (en) * 2004-11-29 2006-06-01 Macronix International Co., Ltd. Charge trapping dielectric structure for non-volatile memory
JP4683995B2 (ja) * 2005-04-28 2011-05-18 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置
US7397699B2 (en) * 2005-07-27 2008-07-08 Atmel Corporation Channel discharging after erasing flash memory devices
US7242622B2 (en) * 2005-12-06 2007-07-10 Macronix International Co., Ltd. Methods to resolve hard-to-erase condition in charge trapping non-volatile memory
US8223540B2 (en) 2007-02-02 2012-07-17 Macronix International Co., Ltd. Method and apparatus for double-sided biasing of nonvolatile memory
US7486567B2 (en) * 2007-04-30 2009-02-03 Macronix International Co., Ltd Method for high speed programming of a charge trapping memory with an enhanced charge trapping site

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3851317A (en) * 1973-05-04 1974-11-26 Ibm Double density non-volatile memory array
EP0573170A1 (fr) * 1992-06-01 1993-12-08 National Semiconductor Corporation Réseau de cellules EEPROM à haute densité d'intégration présentant un schéma de programmation nouveau et procédé de fabrication
EP0697702A2 (fr) * 1994-08-19 1996-02-21 Kabushiki Kaisha Toshiba Dispositif de mémoire à semi-conducteur et circuit de commutation à haut voltage
US5546402A (en) * 1992-09-11 1996-08-13 International Business Machines Corporation Flash-erase-type nonvolatile semiconductor storage device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5222040A (en) * 1990-12-11 1993-06-22 Nexcom Technology, Inc. Single transistor eeprom memory cell
JP3231437B2 (ja) * 1992-07-06 2001-11-19 株式会社日立製作所 不揮発性半導体記憶装置
US5515319A (en) * 1993-10-12 1996-05-07 Texas Instruments Incorporated Non-volatile memory cell and level shifter
JP3273582B2 (ja) * 1994-05-13 2002-04-08 キヤノン株式会社 記憶装置
US6475846B1 (en) * 1995-05-18 2002-11-05 Texas Instruments Incorporated Method of making floating-gate memory-cell array with digital logic transistors
US5789776A (en) * 1995-09-22 1998-08-04 Nvx Corporation Single poly memory cell and array

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3851317A (en) * 1973-05-04 1974-11-26 Ibm Double density non-volatile memory array
EP0573170A1 (fr) * 1992-06-01 1993-12-08 National Semiconductor Corporation Réseau de cellules EEPROM à haute densité d'intégration présentant un schéma de programmation nouveau et procédé de fabrication
US5546402A (en) * 1992-09-11 1996-08-13 International Business Machines Corporation Flash-erase-type nonvolatile semiconductor storage device
EP0697702A2 (fr) * 1994-08-19 1996-02-21 Kabushiki Kaisha Toshiba Dispositif de mémoire à semi-conducteur et circuit de commutation à haut voltage

Also Published As

Publication number Publication date
JPH11134886A (ja) 1999-05-21
JP3558510B2 (ja) 2004-08-25
US6067251A (en) 2000-05-23
DE69832683D1 (de) 2006-01-12
KR19990037481A (ko) 1999-05-25
EP0913833A2 (fr) 1999-05-06
TW415070B (en) 2000-12-11
EP0913833B1 (fr) 2005-12-07
DE69832683T2 (de) 2006-08-17

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