EP0924737A1 - Array aus diamant/wasserstoffhaltigen Elektroden - Google Patents
Array aus diamant/wasserstoffhaltigen Elektroden Download PDFInfo
- Publication number
- EP0924737A1 EP0924737A1 EP98204254A EP98204254A EP0924737A1 EP 0924737 A1 EP0924737 A1 EP 0924737A1 EP 98204254 A EP98204254 A EP 98204254A EP 98204254 A EP98204254 A EP 98204254A EP 0924737 A1 EP0924737 A1 EP 0924737A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- diamond
- hydrogen
- electron
- coating
- containing material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 37
- 239000010432 diamond Substances 0.000 title claims abstract description 37
- 229910052739 hydrogen Inorganic materials 0.000 title claims abstract description 17
- 239000001257 hydrogen Substances 0.000 title claims abstract description 17
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 title claims abstract description 14
- 239000000463 material Substances 0.000 claims abstract description 24
- 238000000576 coating method Methods 0.000 claims abstract description 22
- 239000011248 coating agent Substances 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 229920006395 saturated elastomer Polymers 0.000 claims abstract description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 6
- 238000004519 manufacturing process Methods 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 11
- 239000002245 particle Substances 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 150000002431 hydrogen Chemical class 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 238000007639 printing Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 4
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 229910052744 lithium Inorganic materials 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000007858 starting material Substances 0.000 description 3
- 239000000725 suspension Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- 238000010849 ion bombardment Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- -1 arsenic organic compound Chemical class 0.000 description 1
- OEYOHULQRFXULB-UHFFFAOYSA-N arsenic trichloride Chemical compound Cl[As](Cl)Cl OEYOHULQRFXULB-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000000572 ellipsometry Methods 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004050 hot filament vapor deposition Methods 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 150000002903 organophosphorus compounds Chemical class 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- FAIAAWCVCHQXDN-UHFFFAOYSA-N phosphorus trichloride Chemical compound ClP(Cl)Cl FAIAAWCVCHQXDN-UHFFFAOYSA-N 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 150000003388 sodium compounds Chemical class 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 238000001370 static light scattering Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- 238000004402 ultra-violet photoelectron spectroscopy Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/308—Semiconductor cathodes, e.g. cathodes with PN junction layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/304—Field emission cathodes
- H01J2201/30446—Field emission cathodes characterised by the emitter material
- H01J2201/30453—Carbon types
- H01J2201/30457—Diamond
Definitions
- the invention relates to an electron-emitting component with an arrangement (Array) of one or more electron-emitting electrodes that form a Have substrate and a coating with a diamond-containing material.
- a such component is for use in screens, for light generation, in Electron microscopes and for other areas of application in which electron emitting Electrodes are used.
- Diamond-containing material are used as electron-emitting cover layers of electrodes very suitable because diamond has a negative electron affinity and therefore emits electrons even at low field strengths.
- Diamond is chemically inert, hard and changes under the manufacturing conditions not for screens. Despite these advantages of diamond as an electron emitter
- electrode material As such, diamond is electrical non-conductive. To be able to use it as a material for pixel electrodes, you can increase its conductivity by doping or you can use it in a Use material combination with another electrically conductive material.
- a field emission cathode which consists of a layer contains a conductive material and a layer of an amorphous diamond film, which is deposited over the conductive material to cover emission areas form, and in which the amorphous diamond as a material with lower effective Work function works.
- Each emission area contains at least two sub-regions with different electron affinity.
- the object of the present invention is to use an electron-emitting component an array of one or more field-emitting electrodes that have a substrate and a coating with a diamond-containing material, to provide its electron emission evenly over the entire Electrode area is distributed and the work function of the electrons is low and is constant.
- the object is achieved by an electron-emitting component with an arrangement (array) of one or more electron-emitting Electrodes that have a substrate and a coating containing a diamond Have material, the coating with a diamond-containing material has hydrogen-saturated top layer.
- Such a component emits electrons at lower voltages than components with coatings made of diamond not saturated with hydrogen. At a voltage of less than 10V / ⁇ m, emission currents of 1 nA / 0.25 cm 2 or 4 nA / cm 2 are obtained .
- the component according to the invention is therefore suitable, for example, for flat screens which require a current density of 0.1A / mm 2 at a voltage below 25 V.
- the coating on the substrate is printed.
- the coating can be done by standard printing processes, e.g. Inkjet printing, cliché printing etc. are produced and distinguished by a very good liability.
- the diamond-containing material contains diamond particles contains a diameter of 5 to 100 nm. These layers are thin and even. They are resistant to wear from ion bombardment by residual gas ions, because the coating has no emitter tips or similar exhibits by ion bombardment could be removed.
- the invention also relates to a method for producing an arrangement of one or more electron-emitting electrodes, in which a substrate with a coating is provided with a diamond-containing material and their Surface with a hydrogen or carbon / hydrogen plasma up to Saturation with hydrogen to form a hydrogen-saturated top layer is treated.
- the coating is preferably coated with a diamond Material printed on a substrate. This process makes it inexpensive Large-area electrode arrays with a large number of electrodes are obtained show homogeneous behavior, i.e. where the properties of an electrode on the other hand shows no deviations.
- the method is also particularly suitable for coating temperature-sensitive substrates.
- Fig. 1 Electron-emitting component with an electrode array.
- An electron-emitting device contains a single or an array of electrodes, i.e. a variety of similar electrodes that are different from each other divided or separated, arranged in a line or a plane and thereby form a linear or planar electron source.
- a Such an array can be, for example, ⁇ 1,000 or even several hundred thousand include individual electrodes.
- the coating 1 made of a diamond-containing material with a hydrogen-saturated cover layer is arranged on the substrate.
- the component further comprises means for making electrical contact or for applying an extraction field.
- the coating with a diamond-containing material and a hydrogen-saturated one usually has a nominal one, measured by means of ellipsometry Layer thickness from 5 nm to 700 nm. The by differential light scattering or mechanical scanning of the layers measured average roughness (rms) 5 nm to 500 nm.
- the diamond-containing material has a negative electron affinity using UV photoelectron spectroscopy can be measured. It can humiliate the electrical resistance with one or more of the elements boron, nitrogen, Phosphorus, lithium, sodium or arsenic can be doped. Boron is preferred as the dopant.
- the diamond-containing material contains not only sp 3 -bonded carbon but also sp 2 -bonded carbon, which also contributes to the reduction in resistance.
- the coating is made from a fine crystalline diamond Starting material, which is produced by the known methods.
- the starting material containing diamond can e.g. using microwave plasma CVD a gas mixture of a carbon-containing gas that contains hydrogen, oxygen, Contains halogens and / or an inert gas.
- a gas mixture of a carbon-containing gas that contains hydrogen, oxygen, Contains halogens and / or an inert gas For the separation of doped nanocrystalline diamond layers becomes the gas phase for on-board doping Boron chloride or diborane, for nitrogen doping nitrogen or ammonia, for the phosphorus doping phosphorus chloride or an organophosphorus compound, for the doping with lithium and sodium the corresponding metal vapors or organic lithium or sodium compounds and arsenic chloride for arsenic doping or added an arsenic organic compound.
- a diamond one Material created by laser ablation of graphite or by explosion synthesis is obtained is suitable. It can contain diamond-containing particles with a particle size from 5 to 100 nm can be used. The use of is preferred Particles with a size of ⁇ 60 nm.
- a printing paste is made from the fine-crystalline, diamond-containing starting material manufactured.
- the diamond-containing starting powder is in an aqueous or suspended organic solvents and with binders, dispersants, Suspension stabilizers, liquefiers, pressure oils, etc. processed into a printing paste.
- the printing paste is made using a conventional printing technique, e.g. Screen printing process, flexographic process or an inkjet printing process printed on the substrate in a structured electrode pattern.
- a structured electrode pattern can consist, for example, of individual strips, a grid pattern or from individual round, rectangular or square Points on a lower electrode.
- the printed layer is dried and burned in if necessary.
- the coating prepared in this way is then subjected to a hydrogen treatment subjected until the surface of the layer is hydrogen saturated.
- This treatment can be a plasma-activated CVD method, for example and carried out in a PECVD apparatus.
- Another possibility is to carry out the hydrogen treatment in a thermal CVD process, e.g. in a hot wire CVD reactor.
- a first process step fine diamond-containing particles were combined in one organic solvents with a high vacuum resistant resin as a binder stirred a suspension.
- the suspension is on a Printed metal surface and then dried at 80 ° C. Subsequently there is a hydrogen plasma treatment in a microwave reactor at 4 kW Power, 200 mbar pressure and a temperature of 600 ° C.
- the current-voltage curve can be measured and the emission can be observed with the aid of a luminescent layer.
- the current-voltage curve of this arrangement was measured. At a voltage of 6V / ⁇ m an emission current of 4 nA / cm 2 was achieved.
Landscapes
- Cold Cathode And The Manufacture (AREA)
Abstract
Description
Die Strom-Spannungskurve dieser Anordnung wurde gemessen. Bei einer Spannung von 6V/µm wurde ein Emissionsstrom von 4 nA/cm2 erreicht.
Claims (5)
- Elektronenemittierendes Bauteil mit einer Anordnung (Array) von einer oder mehreren elektronenemittierenden Elektroden, die ein Substrat und eine Beschichtung mit einem diamanthaltigen Material aufweisen,
dadurch gekennzeichnet,
daß die Beschichtung mit einem diamanthaltigen Material eine wasserstoffgesättigte Deckschicht hat. - Elektronenemittierendes Bauteil gemäß Anspruch 1,
dadurch gekennzeichnet,
daß die Beschichtung auf das Substrat aufgedruckt ist. - Elektronenemittierendes Bauteil gemäß Anspruch 1,
dadurch gekennzeichnet,
daß das diamanthaltige Material Diamantpartikel mit einem Durchmesser von 5 bis 100 nm enthält. - Verfahren zur Herstellung einer Anordnung von einer oder mehreren elektronenemittierenden Elektroden, bei dem ein Substrat mit einer Beschichtung mit einem diamanthaltigen Material versehen wird und deren Oberfläche mit einem Wasserstoff- oder Kohlenstoff/Wasserstoff-Plasma bis zur Sättigung mit Wasserstoff zur Bildung einer wasserstoffgesättigten Deckschicht behandelt wird.
- Verfahren gemäß Anspruch 4,
dadurch gekennzeichnet,
daß ein Substrat mit einer Beschichtung mit einem diamanthaltigen Material bedruckt wird.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE1997157141 DE19757141A1 (de) | 1997-12-20 | 1997-12-20 | Array aus Diamant/wasserstoffhaltigen Elektroden |
| DE19757141 | 1997-12-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| EP0924737A1 true EP0924737A1 (de) | 1999-06-23 |
Family
ID=7852922
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP98204254A Withdrawn EP0924737A1 (de) | 1997-12-20 | 1998-12-15 | Array aus diamant/wasserstoffhaltigen Elektroden |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP0924737A1 (de) |
| JP (1) | JPH11265654A (de) |
| DE (1) | DE19757141A1 (de) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2793603A1 (fr) * | 1999-03-06 | 2000-11-17 | Smiths Industries Plc | Dispositif emetteur d'electrons et procede de fabrication d'un tel dispositif |
| WO2005022579A1 (en) * | 2003-08-29 | 2005-03-10 | University Of Bristol | Field emitter device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AT513190B9 (de) * | 2012-08-08 | 2014-05-15 | Berndorf Hueck Band Und Pressblechtechnik Gmbh | Vorrichtung und Verfahren zur Plasmabeschichtung eines Substrats, insbesondere eines Pressblechs |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0609532A1 (de) * | 1993-02-01 | 1994-08-10 | Motorola, Inc. | Elektronenemitter |
| EP0709870A1 (de) * | 1994-10-31 | 1996-05-01 | AT&T Corp. | Verfahren und Vorrichtung zur Herstellung von teilchenförmigen und verbesserten field-effekt Emittern und so erhaltene Produkte |
| EP0718864A1 (de) * | 1994-12-22 | 1996-06-26 | AT&T Corp. | Feldemissionsvorrichtung mit ultrafeinen Diamantteilchen-Emittoren |
| EP0725415A2 (de) * | 1995-01-31 | 1996-08-07 | AT&T Corp. | Feldemissionsvorrichtungen unter Verwendung von aktivierten emittierenden Diamantpartikelnherstellungsverfahren |
| WO1996033507A1 (en) * | 1995-04-21 | 1996-10-24 | The Regents Of The University Of California | Diamond thin film electron emitter |
| US5619093A (en) * | 1995-03-31 | 1997-04-08 | The United States Of America As Represented By The Secretary Of The Navy | Electron field emission |
| EP0836217A1 (de) * | 1996-10-14 | 1998-04-15 | Hamamatsu Photonics K.K. | Elektronenröhre |
| US5744195A (en) * | 1994-10-31 | 1998-04-28 | Lucent Technologies Inc. | Field emission devices employing enhanced diamond field emitters |
| WO1998027568A1 (en) * | 1996-12-18 | 1998-06-25 | Smiths Industries Public Limited Company | Diamond surfaces |
| WO1998044526A1 (en) * | 1997-03-27 | 1998-10-08 | Candescent Technologies Corporation | Fabrication and structure of electron emitters coated with material such as carbon |
-
1997
- 1997-12-20 DE DE1997157141 patent/DE19757141A1/de not_active Withdrawn
-
1998
- 1998-12-11 JP JP35200398A patent/JPH11265654A/ja not_active Withdrawn
- 1998-12-15 EP EP98204254A patent/EP0924737A1/de not_active Withdrawn
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0609532A1 (de) * | 1993-02-01 | 1994-08-10 | Motorola, Inc. | Elektronenemitter |
| EP0709870A1 (de) * | 1994-10-31 | 1996-05-01 | AT&T Corp. | Verfahren und Vorrichtung zur Herstellung von teilchenförmigen und verbesserten field-effekt Emittern und so erhaltene Produkte |
| US5744195A (en) * | 1994-10-31 | 1998-04-28 | Lucent Technologies Inc. | Field emission devices employing enhanced diamond field emitters |
| EP0718864A1 (de) * | 1994-12-22 | 1996-06-26 | AT&T Corp. | Feldemissionsvorrichtung mit ultrafeinen Diamantteilchen-Emittoren |
| EP0725415A2 (de) * | 1995-01-31 | 1996-08-07 | AT&T Corp. | Feldemissionsvorrichtungen unter Verwendung von aktivierten emittierenden Diamantpartikelnherstellungsverfahren |
| US5619093A (en) * | 1995-03-31 | 1997-04-08 | The United States Of America As Represented By The Secretary Of The Navy | Electron field emission |
| WO1996033507A1 (en) * | 1995-04-21 | 1996-10-24 | The Regents Of The University Of California | Diamond thin film electron emitter |
| EP0836217A1 (de) * | 1996-10-14 | 1998-04-15 | Hamamatsu Photonics K.K. | Elektronenröhre |
| WO1998027568A1 (en) * | 1996-12-18 | 1998-06-25 | Smiths Industries Public Limited Company | Diamond surfaces |
| WO1998044526A1 (en) * | 1997-03-27 | 1998-10-08 | Candescent Technologies Corporation | Fabrication and structure of electron emitters coated with material such as carbon |
Non-Patent Citations (3)
| Title |
|---|
| GEIS M W ET AL: "DIAMOND EMITTERS FABRICATION AND THEORY", May 1996, JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY: PART B, VOL. 14, NR. 3, PAGE(S) 2060 - 2067, XP000621834 * |
| HUANG Z -H ET AL: "MONTE CARLO SIMULATION OF HOT ELECTRON CHARGE TRANSPORT IN DIAMOND UNDER AN INTERNAL ELECTRIC FIELD", 28 August 1995, APPLIED PHYSICS LETTERS, VOL. 67, NR. 9, PAGE(S) 1235 - 1237, XP002036963 * |
| OKANO K ET AL: "FABRICATION OF A MINIATURE-SIZE PYRAMIDAL-SHAPE DIAMOND FIELD EMITTER ARRAY", 1 June 1995, IEEE ELECTRON DEVICE LETTERS, VOL. 16, NR. 6, PAGE(S) 239 - 241, XP000514716 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2793603A1 (fr) * | 1999-03-06 | 2000-11-17 | Smiths Industries Plc | Dispositif emetteur d'electrons et procede de fabrication d'un tel dispositif |
| FR2797712A1 (fr) * | 1999-03-06 | 2001-02-23 | Smiths Industries Plc | Dispositif emetteur d'electrons et procede de fabrication d'un tel dispositif |
| US6538368B1 (en) | 1999-03-06 | 2003-03-25 | Smiths Group Plc | Electron-emitting devices |
| WO2005022579A1 (en) * | 2003-08-29 | 2005-03-10 | University Of Bristol | Field emitter device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH11265654A (ja) | 1999-09-28 |
| DE19757141A1 (de) | 1999-06-24 |
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