EP0998758A1 - Gravure a sec d'oxydes d'indium et d'etain - Google Patents

Gravure a sec d'oxydes d'indium et d'etain

Info

Publication number
EP0998758A1
EP0998758A1 EP98931554A EP98931554A EP0998758A1 EP 0998758 A1 EP0998758 A1 EP 0998758A1 EP 98931554 A EP98931554 A EP 98931554A EP 98931554 A EP98931554 A EP 98931554A EP 0998758 A1 EP0998758 A1 EP 0998758A1
Authority
EP
European Patent Office
Prior art keywords
reactive gas
material layer
etch
etch method
hbr
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP98931554A
Other languages
German (de)
English (en)
Inventor
Jie Chen
Haruhiro Goto
Marc Michael Kollrack
Kai-An Wang
Tzy-Chung Wu
Yuen-Kui Wong
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AKT Inc
Original Assignee
Applied Komatsu Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Komatsu Technology Inc filed Critical Applied Komatsu Technology Inc
Publication of EP0998758A1 publication Critical patent/EP0998758A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials

Definitions

  • the invention is generally directed to dry etching of indium and tin oxides.
  • a flat glass panel display typically begins with a clean glass substrate.
  • Transistors are formed on the flat panel using film deposition and selective etching techniques. Sequential deposition, photo-lithography and selective etching of film layers on the substrate create individual transistors on the substrate. These devices, as well as metallic inter-connections, liquid crystal cells and other devices formed on the substrate are then used to create active matrix display screens on the substrate to create a flat panel display in which display states are electrically created in the individual pixels.
  • Opto-electronic devices such as liquid crystal displays (LCD's), charge coupled sensor devices (CCD's) and the like often include thin-film transparent electrodes disposed over a light transmitting or light receiving element.
  • the transparent electrodes are typically composed of an oxide of indium (InO) or an oxide of tin (SnO) or a mixture of these oxides or a compound having the general formulation: In x Sn y O z , where the z factor is greater than zero but less than 100%.
  • the formulation, In x Sn y O z is commonly known in the art as ITO.
  • a thin-film of the material making up the transparent electrodes is deposited on a substrate.
  • the thin-film is thereafter selectively etched so as to remove pre-specified portions and thereby define a desired wiring pattern.
  • wet etching Another drawback of wet etching is that its material removal rate tends to be highly sensitive to temperature variations. Tight temperature control, which also complicates the overall process and increases costs, is needed to compensate and prevent over or under etching.
  • Under etching refers to the condition where the transparent-electrode thin-film is not etched through thoroughly and undesired shorts appear in the resultant conductor patter.
  • Over etching refers to the condition where the transparent-electrode thin-film is etched through thoroughly and undesired etching of the underlying substrate begins and/or time and resources are wasted in trying to etch to a depth beyond that needed.
  • wet etching Yet a further drawback of wet etching is that it is isotropic.
  • the invention features an etch method which includes providing a layer made of a material selected from the group consisting of an indium oxide (InO) , a tin oxide (SnO) , a mixture of indium and tin oxides, a compound of indium and of tin and of oxygen having the general formulation In x Sn y O z where z is substantially greater than zero but less than 100% and where the sum x+y fills the remainder of the 100%, and a mixture of the preceding ones of the group members .
  • a reactive gas including hydrogen bromide (HBr) and hydrogen iodide (HI) is supplied to a vicinity of the material layer.
  • the reactive gas can include various mixtures of HBr and HI.
  • the reactive gas can include approximately fifty percent hydrogen bromide and approximately fifty percent hydrogen iodide.
  • the reactive gas can be supplied at a pressure at least as low as approximately 60 milliTorr. For example, a pressure of approximately 15 milliTorr can be used.
  • a mask layer can provided over the material layer.
  • the mask layer can have one or more apertures defined through the mask layer for exposing corresponding surface portions of the material layer to products of the reactive gas and the applied electric field.
  • a substrate can be provided below the material layer. A determination can then be made as to when the etch process etches through the material layer to the substrate, and the etch process can be halted at or about the time it is determined that the etch process has etched through the material layer to the substrate.
  • Respective amounts of HBr and HI can be provided in the reactive gas to control the uniformity of etching of a surface of the material layer.
  • Respective amounts of HBr and HI can also be provided in the reactive gas to control the size of a taper angle formed with respect to an etched portion of the material layer.
  • the respective amounts of HBr and HI can be selected to achieve a taper angle in the range from approximately 30 degrees to approximately 72 degrees or higher.
  • respective amounts of HBr and HI can be provided in the reactive gas to control the etch rate of the material layer.
  • respective amounts of HBr and HI can be provided in the reactive gas to control the selectivity of etching of the material layer compared to a substrate.
  • the invention features one or more of the following advantages.
  • a mixture of HI and HBr it is possible to achieve an etch whose uniformity is better than the uniformity which results from using either HBr or HI alone.
  • the improved uniformity can be used for relatively large surface areas, such as those typically used in flat panel displays.
  • the relative amounts of HBr and HI in the reactive gas can be selected to control the taper angle of the etched material depending upon the subsequent processing which may be required.
  • Using a mixture of HBr and HI as the reactive gas can provide both a relatively highly selective etch as well as a relatively residue- free etch.
  • FIG. 1 is a cross-sectional schematic of a reactive ion etch (RIE) system for carrying out a dry etch process in accordance with the invention.
  • RIE reactive ion etch
  • FIG. 2 illustrates a taper angle that results from etching a transparent-electrode material layer.
  • Fig. 1 schematically shows in cross-section a reactive ion etch (RIE) system 100.
  • RIE reactive ion etch
  • System 100 includes a substrate-supporting cathode 110 that is spaced-apart from an opposed anode 180 within a low-pressure chamber 105.
  • the anode 180 may be a discrete element as shown or it may be defined by one or more of the inner walls of the etch chamber 105 rather than being a separate element.
  • the inner walls of the chamber define the anode, and the cathode is placed centrally within the chamber so that multiple faces of the cathode oppose corresponding inner walls of the chamber. The latter implementation allows for the simultaneous etch of two or more workpieces in one chamber .
  • a radio frequency (RF) generator 190 is coupled electrically to the cathode 110 and anode 180 for producing an RF field between the opposed faces of the cathode and anode.
  • the RF field may be of a single frequency or multiple frequencies.
  • a combination of approximately 13.56 megahertz (MHz) for plasma creation and approximately 400 kilohertz (kHz) for ion acceleration can be used.
  • a gas supply means 150 which can include a gas container or gas tank, is operatively coupled to the low- pressure chamber 105 for supplying a reactive gas 155 into the chamber 105.
  • the reactive gas 155 may include a mixture of hydrogen-bromide (HBr) and hydrogen-iodide
  • a flow-rate control means 153 such as a valve, is provided for regulating the inflow rate of the reactive gas 155 so as to maintain a desired level of inflow (e.g., 100 seem, which is the flow of gas which fills up per minute a volume of 100 cc to a pressure of 1 atmosphere at 0 °C) .
  • a desired level of inflow e.g. 100 seem, which is the flow of gas which fills up per minute a volume of 100 cc to a pressure of 1 atmosphere at 0 °C
  • a desired level of inflow e.g., 100 seem, which is the flow of gas which fills up per minute a volume of 100 cc to a pressure of 1 atmosphere at 0 °C
  • a desired level of inflow e.g., 100 seem, which is the flow of gas which fills up per minute a volume of 100 cc to a pressure of 1 atmosphere at 0 °C
  • inert carrier gas such as argon, helium or
  • the flow rate of the supplied reactive gas 155 should be approximately 100 to 200 seem, although higher or lower flow rates may be desirable in certain implementations.
  • a pressure regulator 177 is provided along the exhaust path of a vacuum pump 170 for maintaining a desired pressure level within chamber 105.
  • the pressure level should be at least as low as approximately 60 mTorr, although higher pressure levels may be appropriate in certain applications. Pressure levels at least as low as approximately 30 mTorr are desirable. In some applications, a pressure level of approximately 15 mTorr provides a particularly uniform etch across the surface of the etched material. In general, it is desirable to maintain the ratio of vapor pressure to chamber pressure at least as high as 10 5 .
  • a workpiece 115 which has a transparent-electrode material layer 130 to be etched, is mounted on the cathode 110.
  • the workpiece 115 can include a substrate 120 onto which the transparent-electrode material layer 130 is deposited.
  • the substrate 120 may be composed of one or more layers of materials such as glass (Si0 2 ) , silicon nitride (Si 3 N 4 ) , amorphous silicon (a-Si) , poly or mono-crystalline silicon (p-Si or Si) , or other materials as may be suitable for a specific opto-electronic application.
  • the transparent-electrode material layer 130 can be a thin-film having a thickness of 1500 angstroms or less and comprising ITO, an indium oxide, a tin oxide, or a mixture of these oxides.
  • a pre-patterned mask 140 that has been formed by photolithography or other suitable techniques is provided about the material layer 130 which is to be etched.
  • the mask 140 has an aperture 145 defined therethrough for exposing a surface portion 135 of the transparent- electrode material layer 130. Unexposed portions of material layer 130 are protected from etching by the material of the mask 140.
  • the mask 140 can be composed of materials such as photoresist deposited to a thickness of 1.5 microns ( ⁇ m) .
  • the chamber 105 is sealed to maintain pressures at least as low as 60 mTorr in the vicinity of the workpiece 115.
  • the vacuum pump 170 is coupled to the low-pressure chamber 105 for evacuating exhaust gases 165 from the chamber 105 and for maintaining a desired low pressure within the chamber 105.
  • the RF generator 190 is activated by the etch- controller 176 to provide an oscillating electric field between the cathode 110 and anode 180 for etching through the exposed portion of material layer 130 in a single step and stopping after etch-through has been achieved.
  • the frequency (f) of the generated RF field is preferably in the range of approximately 400 kHz to 13.56 MHz. If desired, the generated RF field may have a combination of multiple frequencies such as both 13.56 MHz and 400 kHz and these combined multiple frequencies may be developed by separate oscillators.
  • the lower frequency field is often developed so as to predominate in the vicinity of the substrate-supporting cathode 110 and is referred to as the pedestal RF.
  • the higher frequency field is often developed so as to predominate in the vicinity of the plasma above the workpiece 115 and is referred to as the plasma RF .
  • the power density (W) of the applied RF field should be at least approximately 0.5 watt per centimeter squared (0.5 W/cm 2 ) as measured relative to the exposed surface area 135 of material layer 130. In certain implementations, a power density of at least approximately 2 W/cm 2 is desirable, although higher or lower power densities are appropriate in other situations. In general, the etch rate tends to increase at higher power densities. However, at higher power densities, photoresist can become more difficult to remove following the dry etch.
  • the intensity (volts/cm) of the RF field is sufficiently large to disassociate the next-described reactive gas 155 into atomic constituents (free radicals) .
  • field intensity in the range of 300 to 800 volts/cm is created in the vicinity of the exposed surface portion 135 of material layer 130.
  • the gas source 150 supplies a steady stream of a reactive gas 155 including or consisting of a mixture of hydrogen bromide (HBr) and hydrogen iodide (HI) .
  • a reactive gas 155 including or consisting of a mixture of hydrogen bromide (HBr) and hydrogen iodide (HI) .
  • the gas consists essentially of fifty percent HBr and fifty percent HI by volume.
  • a temperature controller 109 such as a fluid- cooled heat exchanger, is coupled to the cathode 110 to maintain the temperature of the cathode in the range of approximately 5 to 80 oc.
  • the temperature of the substrate 120 should be maintained at approximately 120 oC or less, and preferably at 100 °c or less to prevent damage to the films on the substrate 120.
  • the temperature of the substrate 120 is determined by thermal transfer through the cathode 110 to the temperature controller 109.
  • the temperature of the plasma 160 that forms in the vicinity of the surface portion 135 can be significantly higher and tends to be sporadic as the plasma fluctuates.
  • a spectroscopic analyzer 175 is provided along the exhaust path of vacuum pump 170 for optically scanning the exhaust gases 165, analyzing the results and thereby determining the chemical composition of the exhaust gases 165.
  • the spectroscopic analyzer 175 is designed to distinguish between exhaust gases 165 that do or do not contain one or more compounds in the by-product group consisting of: water vapor (H 2 0) , indium iodides (In x I y ), tin iodides (Sn x I y ) , indium bromides (In x Br y ) , and tin bromides (Sn x Br y ) and tin hydrides (Sn x H y ) .
  • TABLE-1 lists some of the chemical reactions that are believed to occur between the freed constituents H * , Br * and I * and In, Sn and O to produce volatile byproducts.
  • the spectroscopic analyzer 175 includes an optical detector that is sensitive in the visible light range of ⁇ l equal to approximately 450 to 452 nanometers.
  • the spectroscopic analyzer 175 is coupled to an etch-controller 176 that turns off the RF generator 190 and thereby halts the etch process when the analyzer 175 indicates that effective etch-through has been achieved.
  • etch-through' is used here to mean the condition when etching has progressed sufficiently far into the transparent-electrode layer so that a useable wiring pattern is created in the transparent-electrode layer without leaving behind undesired shorts or low resistance paths between conductors of that layer that are to be electrically isolated from one another.
  • a second spectroscopic detector referred to as an OES (Optical Emission Spectroscope) 108, can be installed approximately in line with the workpiece surface so as to detect plasma induced light emission ⁇ 2 of indium (In) or tin (Sn) approximately in the plane 107 of a surface portion 135.
  • the OES 108 is coupled to the etch- controller 176 so as to turn off the RF generator 190 and thereby halt the etch process when effective etch-through is indicated to have been reached by an empirically- determined reduction in ⁇ 2 emissions of In or Sn in the plane 107.
  • the OES 108 has a faster response time than the exhaust spectroscopic analyzer 175 because the OES 108 does not wait for exhaust gases to reach it .
  • the exhaust spectroscopic analyzer 175 may be used to verify readings obtained from the OES 108 to assure that the OES 108 is operating correctly before plasma shut-off occurs.
  • Another way that the time point of effective etch- through of material layer 130 can be determined is by looking for peaks in plasma induced light emission ⁇ 3 of hydrogen (H) , bromine (Br) and/or iodine (I) approximately in the plane 107 of the surface portion 135.
  • the combination of H, Br and/or I emission peaks, and In and/or Sn emission minima may be used to determine the time point for turning off RF generator 190.
  • OES 108 can also be used to detect plasma- induced light emission by the released constituents of the substrate 120 as etch-through is achieved. The detection of this event may also be used to determine the appropriate time to turn off the RF generator 190.
  • FIG. 2 illustrates the workpiece 115 after the transparent-electrode material layer 130 has been etched using a reactive gas 155 consisting essentially of HBr and HI.
  • the etched sidewalls 132 of the ITO layer 130 form a taper angle with the surface of the substrate 120 as shown in FIG. 2.
  • the taper angle can be varied from as low as approximately 30 degrees to as high as approximately 72 degrees.
  • TABLE-2 shows experimental results obtained for the case where the material layer 130 consists essentially of ITO.
  • the sample size was approximately 360 mm by 465 mm.
  • the RF generator 190 was set to a single frequency of 13.56 MHz for both the pedestal and the plasma.
  • the lower power level was set to define a power density of about 1.19 W/cm 2 relative to the exposed surface 135 of the ITO layer 130.
  • the total flow of the reactive gas was approximately 120 seem. In general, the uniformity is indicative of the variation in depth of the etch across the surface of the workpiece 115.
  • the use of a reactive gas consisting essentially of a mixture of HBr and HI improved the uniformity of the etch across the surface of the workpiece 115 compared to a reactive gas consisting essentially of HI alone.
  • the uniformity was determined as follows. The depth of the etch was measured at sixteen points on the workpiece 115, and the maximum, minimum and average depths were noted. The uniformity was set equal to the difference between the maximum and minimum depths, divided by twice the average depth.
  • the uniformity of the etch achieved using HBr alone is not as good as the uniformity achieved using HI alone under similar conditions.
  • the amount of HBr in the reactive gas 155 can be varied from slightly more than zero percent to slightly less than one-hundred percent. While a reactive gas consisting of approximately fifty percent HBr and fifty percent HI yields a substantially uniform etch of the exposed layer 135, the relative amounts of HBr and HI can be selected to control the taper angle of the etched material.
  • a taper angle of about 72 degrees resulted from using pure HI as the reactive gas 155.
  • a taper angle of about 50 degrees resulted.
  • the greater the ratio of HI to HBr in the reactive gas 155 the greater the taper angle.
  • the greater the ratio of HI to HBr the greater the selectivity. This makes it possible to achieve a more uniform final etch through the material layer 130 without resulting in significant etching of the substrate 120.
  • the addition of HBr to the reactive gas 155 can provide a cleaner etch, resulting in less residue compared to the situation where HI alone is used as the reactive gas.
  • using a mixture of HBr and HI as the reactive gas 155 can provide both a selective etch as well as a relatively residue-free etch.
  • HBr tends to etch the surface of the ITO layer which is closer to the edges of the substrate more quickly than it etches the surface near the center
  • HI tends to etch the surface of the ITO layer which is closer to the center of the substrate more quickly than it etches the surface near the edges.
  • HBr and HI compensate one another to achieve a more uniform etch.
  • the observed uniform etch rate using a mixture of HBr and HI gases is believed to be due to both chemical and mechanical mechanisms.
  • the applied HBr and HI gases dissociate in the presence of the RF energy field to form free radicals H * , Br * and I * , where the symbol * indicates that each respective radical may be charged or uncharged.
  • Electrically charged ones of the freed radicals (ions) are accelerated by the RF field to bombard the exposed thin-film surface 135. This bombardment is believed to result in physical breakup or micro-fragmentation of the exposed surface 135.
  • the micro-fragments then react chemically with either the charged or uncharged radicals, H * , Br * and I * .

Landscapes

  • Drying Of Semiconductors (AREA)

Abstract

L'invention concerne un procédé de gravure qui comporte l'étape consistant à prévoir une couche constituée d'une matière sélectionnée dans le groupe formé par un oxyde d'indium (InO), un oxyde d'étain (SnO), un mélange d'oxydes d'indium et d'étain, un composé d'indium, d'étain et d'oxygène représenté par la formule générale InxSnyOz dans laquelle z est sensiblement supérieur à zéro, mais inférieur à 100 %, et la somme de x+y représente le reste des 100 %, et un mélange des éléments précédents du groupe. Un gaz réactif renfermant du bromure d'hydrogène (HBr) et de l'iodure d'hydrogène (HI) est fourni à proximité de la couche de matière. De plus, un champ électrique est prévu pour faire réagir le gaz réactif fourni avec la couche de matière, de façon à former des sous-produits volatils de gaz réactifs et de couche de matière.
EP98931554A 1997-06-25 1998-06-23 Gravure a sec d'oxydes d'indium et d'etain Withdrawn EP0998758A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US881323 1986-07-02
US88132397A 1997-06-25 1997-06-25
PCT/US1998/013139 WO1998059379A1 (fr) 1997-06-25 1998-06-23 Gravure a sec d'oxydes d'indium et d'etain

Publications (1)

Publication Number Publication Date
EP0998758A1 true EP0998758A1 (fr) 2000-05-10

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
EP98931554A Withdrawn EP0998758A1 (fr) 1997-06-25 1998-06-23 Gravure a sec d'oxydes d'indium et d'etain

Country Status (4)

Country Link
EP (1) EP0998758A1 (fr)
JP (1) JP2002506572A (fr)
KR (1) KR100489921B1 (fr)
WO (1) WO1998059379A1 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006135029A (ja) * 2004-11-04 2006-05-25 Sharp Corp ドライエッチング装置
US10546748B2 (en) 2017-02-17 2020-01-28 Lam Research Corporation Tin oxide films in semiconductor device manufacturing
KR102841279B1 (ko) 2018-03-19 2025-07-31 램 리써치 코포레이션 챔퍼리스 (chamferless) 비아 통합 스킴 (scheme)
WO2022020507A1 (fr) 2020-07-23 2022-01-27 Lam Research Corporation Formation avancée de motifs multiples auto-alignés au moyen d'oxyde d'étain
JP7652190B2 (ja) 2020-08-31 2025-03-27 株式会社レゾナック プラズマエッチング方法及び半導体素子の製造方法
WO2022226074A1 (fr) 2021-04-21 2022-10-27 Lam Research Corporation Minimisation de la durée de nettoyage d'une chambre d'oxyde d'étain

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JPH05251400A (ja) * 1992-03-09 1993-09-28 Nisshin Hightech Kk Ｉｔｏのドライエッチング方法
JPH06151380A (ja) * 1992-11-09 1994-05-31 Hitachi Ltd 金属／ｉｔｏ多層膜のエッチング方法
US5286337A (en) * 1993-01-25 1994-02-15 North American Philips Corporation Reactive ion etching or indium tin oxide
US5607602A (en) * 1995-06-07 1997-03-04 Applied Komatsu Technology, Inc. High-rate dry-etch of indium and tin oxides by hydrogen and halogen radicals such as derived from HCl gas
US5667631A (en) * 1996-06-28 1997-09-16 Lam Research Corporation Dry etching of transparent electrodes in a low pressure plasma reactor

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO9859379A1 *

Also Published As

Publication number Publication date
JP2002506572A (ja) 2002-02-26
KR100489921B1 (ko) 2005-05-17
WO1998059379A1 (fr) 1998-12-30
KR20010020474A (ko) 2001-03-15

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