EP1020253A2 - Halbleiterpolierverfahren und Halterplatte - Google Patents

Halbleiterpolierverfahren und Halterplatte Download PDF

Info

Publication number
EP1020253A2
EP1020253A2 EP00300218A EP00300218A EP1020253A2 EP 1020253 A2 EP1020253 A2 EP 1020253A2 EP 00300218 A EP00300218 A EP 00300218A EP 00300218 A EP00300218 A EP 00300218A EP 1020253 A2 EP1020253 A2 EP 1020253A2
Authority
EP
European Patent Office
Prior art keywords
wafer
holding plate
adhesion part
grooves
wax
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP00300218A
Other languages
English (en)
French (fr)
Other versions
EP1020253A3 (de
Inventor
Daisuke Nagano Denshi Co. Ltd. Kobayashi
Tsuyoshi Nagano Electronics Co. Ltd. Matsuzaki
H. Shin-Etsu Hand. Co. Ltd. Shirakawa Pl. Kudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Publication of EP1020253A2 publication Critical patent/EP1020253A2/de
Publication of EP1020253A3 publication Critical patent/EP1020253A3/de
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/129—Preparing bulk and homogeneous wafers by polishing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces

Definitions

  • the present invention relates to a holding plate to which a wafer is adhered through a wax, and a polishing method which is carried out by using the holding plate.
  • a wafer is polished as follows.
  • a wafer is adhered to a holding plate.
  • the wafer is pressed against a polishing pad which is spread on a turn table, by the holding plate.
  • the wafer is rubbed with the polishing pad.
  • As a method in which the wafer is adhered to the holding plate there are a wax-mounting polishing method and a waxless-mounting polishing method.
  • the waxless-mounting polishing method has the advantages of good productivity and low cost because it is not necessary to carry out an adhesion operation in which the wafer is adhered to the holding plate and a separating operation in which the wafer is separated from the holding plate and the polished wafer is easily cleaned.
  • the waxless-mounting polishing method there are problems about a flatness of the polished wafer, a local etching of a rear surface of the wafer, which is carried out by using an abrasive slurry, and the like.
  • the wax-mounting polishing method is used mainly.
  • the wafer is chucked by a vacuum chucking apparatus to apply the wax to the rear surface of the wafer.
  • the rear surface of the wafer is directed downwardly.
  • the wafer chucked by the vacuum chucking apparatus is released near the holding plate to drop the wafer on the holding plate by a self-weight thereof. Thereby, the wafer is adhered to the holding plate.
  • the center portion of the rear surface of the wafer is pressed against the holding plate by a vacuum chucking apparatus into which an air pad is incorporated in a situation that the wafer to which the wax is applied remains chucked or in a situation that the wafer is curved.
  • a holding plate which is made of glass, such as borosilicate glass or the like, or which is made of ceramics, such as alumina, silicon carbide or the like, is used. As the requirement for a flatness of a wafer becomes severe, a holding plate made of ceramics, which has a high rigidity is mainly used.
  • the present invention was developed in view of these problems.
  • An object of the present invention is to provide a holding plate having a construction in which bubbles are hard to be sealed between the holding plate and the rear surface of the wafer even by the wax-mounting polishing method and the thickness of the wax can be even, and to provide a polishing method in which the wafer can be polished by the holding plate so that the dimple is not caused after the wafer is polished.
  • the polishing method for wafer comprises the steps of; adhering a wafer to a wafer adhesion part of a holding plate through a wax, and rubbing the wafer with a polishing pad, wherein grooves are formed on the wafer adhesion part and extend to the outside of the wafer adhesion part.
  • the grooves may be formed on the whole wafer adhesion part.
  • the grooves may be formed at least on a portion of the wafer adhesion part, which is distant over a half of a radius of the wafer from a center of the wafer adhesion part.
  • the polishing method for wafer comprises the steps of; adhering a wafer to a wafer adhesion part of a holding plate through a wax, and rubbing the wafer with a polishing pad, wherein a surface roughness of at least a portion of the wafer adhesion part, which is distant over a half of a radius of the wafer from a center of the wafer adhesion part and that of a peripheral portion of the wafer adhesion part are approximately uniform, and an average roughness of the portion of the wafer adhesion part and that of the peripheral portion of the wafer adhesion part are from 0.5 to 1.5 ⁇ m.
  • a holding plate comprises; a wafer adhesion part for adhering a wafer through a wax, and grooves which are formed on the wafer adhesion part and extend to the outside of the wafer adhesion part.
  • the grooves may be formed on the whole wafer adhesion part.
  • the grooves may be formed at least on a portion of the wafer adhesion part, which is distant over a half of a radius of the wafer from a center of the wafer adhesion part.
  • the grooves may be formed in a grid shape, in a linear shape or in a concentrically circular shape, on the whole wafer adhesion surface of the holding plate.
  • the width of the grooves may be from 5 to 2000 ⁇ m.
  • the depth of the grooves may be from 2 to 500 ⁇ m.
  • the pitch of the grooves may be from 1 to 15 mm.
  • the surface roughness of at least the portion of the wafer adhesion part, which is distant over a half of a radius of the wafer from a center of the wafer adhesion part of the wafer adhesion surface and that of a peripheral portion of the wafer adhesion part are approximately uniform, and the average roughness thereof are 0.5 to 1.5 ⁇ m, the air to be sealed between the wafer and the holding plate easily escapes to the outside of the wafer adhesion part and is dispersed by many concaves between the wafer and the holding plate. As a result, a polishing can be carried out without causing the dimple.
  • the unnecessary wax flows into many concaves and the thickness of the wax becomes thin and even as a whole.
  • the polishing method for wafer is carried out by adhering a wafer to a wafer adhesion part of a holding plate through a wax, and by rubbing the wafer with a polishing pad, wherein grooves are formed on the wafer adhesion part and extend to the outside of the wafer adhesion part, the air to be sealed between the wafer and the holding plate escapes to the outside of the wafer adhesion part through the grooves. Further, the unnecessary wax flows into the grooves. As a result, a polishing can be carried out without causing the dimple.
  • FIG. 1 is a perspective view showing the rear surface side of the holding plate according to the first embodiment.
  • the holding plate 1a is a block made of ceramics. Grooves 2a are formed in a grid shape on the whole rear surface thereof (wafer adhesion surface).
  • FIG. 2 is a perspective view showing the rear surface side of the holding plate according to the second embodiment.
  • the holding plate 1b is a block made of ceramics.
  • a large number of grooves 2b are formed in a linear shape on the whole rear surface thereof.
  • FIG. 3 is a perspective view showing the rear surface side of the holding plate according to the third embodiment.
  • the holding plate 1c is a block made of ceramics. Grooves 2c are formed in a concentrically circular shape on the whole rear surface thereof.
  • the width of the grooves is from 5 ⁇ m to 2000 ⁇ m.
  • the depth thereof is from 2 ⁇ m to 500 ⁇ m.
  • the pitch is preferably from 1 mm to 15 mm.
  • the reason why the upper limit of the width of the grooves is 2000 ⁇ m is that when the width thereof exceeds the upper limit, the possibility that the shape of the groove is transferred to the wafer by the polishing becomes high.
  • the reason why the lower limit of the width of the grooves is 5 ⁇ m is that when the width thereof is less than the lower limit, the bubbles are sealed between the wafer and the holding plate and an unnecessary wax are hard to escape to the grooves.
  • the reason why the upper limit of the depth of the grooves is 500 ⁇ m is that even though the depth thereof exceeds the upper limit, it is not desired to improve the effect more than the case in which the depth does not exceed the upper limit. Further, when the depth exceeds the upper limit, the holding plate is hard to be cleaned. On the other hand, the reason why the lower limit of the depth of the grooves is 2 ⁇ m is that when the depth thereof is less than the lower limit, the bubbles and the unnecessary wax are hard to escape to the grooves.
  • the pitch thereof may be changed according to the size of bubble which is introduced when the wafer is adhered, that is, according to the size of the dimple of the wafer after the polishing
  • the reason why the upper limit of the pitch of the grooves is 15 mm is that when the pitch thereof exceeds the upper limit, the grooves cannot cover all of the bubble generation parts and all of the gathered wax.
  • the reason why the lower limit of the pitch of the grooves is 1 mm is that when the pitch thereof is less than the lower limit, the edges of the grooves are easily broken.
  • the portion which is the rear surface of the holding plate except the groove portion thereof is as flat as possible.
  • the average roughness thereof is 0.40 ⁇ m and the standard deviation thereof is 0.03 ⁇ m, or the roughness thereof is smaller than the above roughness.
  • the shape thereof may be a quadrilateral shape, a semicircular shape (an arced shape), a V-shape or the like, and may be one in which the sealed bubbles and the unnecessary wax can be removed.
  • the shape of the grooves is one in which the edges thereof are round.
  • the grooves are formed in a grid shape or the like on the whole rear surface of the holding plate, the grooves may be formed on the rear surface of the holding plate partially.
  • the grooves are formed at least on a portion of the wafer adhesion part, which is distant over the half of the radius of the wafer from the center of the wafer adhesion part of the wafer adhesion surface, preferably. From the experience, there is much possibility that the dimple of the wafer, which is considered to be caused by the bubbles and the gathered wax exists in the portion of the wafer adhesion part, which is distant over the half of the radius of the wafer from the center of the wafer adhesion part of the wafer adhesion surface.
  • the grooves extend to the outside of the wafer adhesion part.
  • the present invention is not especially limited to the extent of the grooves. When the grooves extend to the outside of the wafer adhesion part about 3mm, the extent of the grooves is sufficient to remove the sealed bubbles and the unnecessary wax.
  • the holding plate may be manufactured by a known method.
  • a plate having a desired thickness is prepared.
  • the plate is cut off so as to have a desired shape.
  • a holding plate having a disk shape is manufactured.
  • a sintering agent and a binder are added to a material powder, such as alumina, silicon carbide, if necessary.
  • the material powder is formed and is sintered at a predetermined temperature.
  • the holding plate having a disk shape is manufactured.
  • the grooves may be formed by a known mechanical process or the like.
  • the formed material powder can be sintered.
  • FIG. 5 is a perspective view showing the rear surface side of the holding plate according to the fourth embodiment.
  • the holding plate 1d is a block made of ceramics.
  • the surface roughness of the whole wafer adhesion surface is approximately uniform and the average roughness thereof is from 0.5 ⁇ m to 1.5 ⁇ m.
  • the reason why the average roughness is 0.5 ⁇ m to 1.5 ⁇ m will be explained.
  • the reason why the upper limit of the average roughness is 1.5 ⁇ m is that when the average roughness exceeds the upper limit, the flatness of the surface of the wafer is damaged after the wafer is polished.
  • the reason why the lower limit of the average roughness is 0.5 ⁇ m is that when the average roughness is less than lower limit, the air and the unnecessary wax are hard to escape to the concaves of the holding plate 1d.
  • the average roughness of the whole rear surface of the holding plate is from 0.5 ⁇ m to 1.5 ⁇ m
  • the average roughness of a portion of the rear surface of the holding plate may be from 0.5 ⁇ m to 1.5 ⁇ m.
  • the average roughness of at least the portion of the wafer adhesion part, which is distant over the half of the radius of the wafer from the center of the wafer adhesion part of the wafer adhesion surface and that of the peripheral portion of the wafer adhesion part are from 0.5 ⁇ m to 1.5 ⁇ m, preferably.
  • the reason therefor or is the same as the above description.
  • a lapping or the like which is a known method may be carried out.
  • the wafer is adhered to the above holding plates 1a to 1d by the wax-mounting method according to the earlier technique.
  • the polishing apparatus 10 comprises a turn table 11, an abrasive slurry supplying member 12, a top ring 13, a top ring rotating member (not shown in the figure) and a turn table rotating member (not shown in the figure).
  • the holding plate 1 When the adhesion of the wafer to the holding plate 1 (1a to 1d) finishes, the holding plate 1 is located under the top ring 13 to contact the wafer W with the polishing pad 14 spread on the turn table 11. The top ring 13 is lowered to press the wafer W against the polishing pad 14 through the holding plate 1. While the top ring rotating member and the turn table rotating member are driven, the abrasive slurry is supplied from a nozzle of the abrasive slurry supplying member 12 to polish the wafer W. When the polishing is finished, the top ring 13 is raised to take out the holding plate 1. Then, the wafer W is separated from the holding plate 1.
  • the average roughness thereof was 0.4 ⁇ m and the standard deviation thereof was 0.03 ⁇ m.
  • the wafers were polished as follows to evaluate the holding plate.
  • the number of the examined wafers was 140.
  • the wafers were polished under the same conditions.
  • the dimple was not caused on the surfaces of the wafers at all.
  • an alumina sintered body having no grooves which has a diameter of 630 mm and a thickness of 20 mm and in which the average roughness is within the range of the present invention.
  • the 140 wafers which were polished under the same conditions as the above description were examined.
  • the average roughness of the holding plate which was to be used in the experiment was measured by using the "handy surf E-30A" made by Tokyo Seimitsu Co. Ltd.
  • the surface of the holding plate was divided by 5 lines 36 degree each.
  • the average roughness was measured in 5 segments having a length of 4 mm on the respective lines at fixed intervals, that is, a total of 25 segments.
  • the mean value of the average roughness of each segment was 1.00 ⁇ m.
  • the standard deviation thereof was 0.15 ⁇ m.
  • the cycle of the main roughness component was several tens ⁇ m.
  • the rate of causing a dimple was about 12 to 15 %.
  • the average roughness of the holding plate according to the earlier technique was 0.40 ⁇ m.
  • the standard deviation thereof was 0.03 ⁇ m.
  • the method for measuring the average roughness is the same as the above described method.

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
EP00300218A 1999-01-18 2000-01-13 Halbleiterpolierverfahren und Halterplatte Withdrawn EP1020253A3 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP986199 1999-01-18
JP986199 1999-01-18

Publications (2)

Publication Number Publication Date
EP1020253A2 true EP1020253A2 (de) 2000-07-19
EP1020253A3 EP1020253A3 (de) 2001-05-23

Family

ID=11731930

Family Applications (1)

Application Number Title Priority Date Filing Date
EP00300218A Withdrawn EP1020253A3 (de) 1999-01-18 2000-01-13 Halbleiterpolierverfahren und Halterplatte

Country Status (5)

Country Link
US (1) US6402594B1 (de)
EP (1) EP1020253A3 (de)
KR (1) KR20000053507A (de)
MY (1) MY133452A (de)
TW (1) TW421622B (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1046462A3 (de) * 1999-03-26 2001-03-21 Ibiden Co., Ltd. Halteplatte für Scheiben bei Schleifmaschinen und Verfahren zur Herstellung dieser Platte

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3342686B2 (ja) * 1999-12-28 2002-11-11 信越半導体株式会社 ウェーハ研磨方法及びウェーハ研磨装置
US20010024877A1 (en) 2000-03-17 2001-09-27 Krishna Vepa Cluster tool systems and methods for processing wafers
US6672943B2 (en) 2001-01-26 2004-01-06 Wafer Solutions, Inc. Eccentric abrasive wheel for wafer processing
US6648743B1 (en) * 2001-09-05 2003-11-18 Lsi Logic Corporation Chemical mechanical polishing pad
KR20030057981A (ko) * 2001-12-29 2003-07-07 주식회사 실트론 연마 장치
DE10235482B3 (de) * 2002-08-02 2004-01-22 Süss Microtec Lithography Gmbh Vorrichtung zum Fixieren dünner und flexibler Substrate
TWI228768B (en) * 2002-08-08 2005-03-01 Jsr Corp Processing method of polishing pad for semiconductor wafer and polishing pad for semiconductor wafer
US6866560B1 (en) 2003-01-09 2005-03-15 Sandia Corporation Method for thinning specimen
USD559063S1 (en) * 2004-03-17 2008-01-08 Jsr Corporation Polishing pad
USD559064S1 (en) 2004-03-17 2008-01-08 Jsr Corporation Polishing pad
USD560457S1 (en) * 2004-10-05 2008-01-29 Jsr Corporation Polishing pad
TWD111897S1 (zh) * 2004-10-05 2006-07-11 股份有限公司 研磨用墊片
USD559648S1 (en) * 2004-10-05 2008-01-15 Jsr Corporation Polishing pad
USD559066S1 (en) 2004-10-26 2008-01-08 Jsr Corporation Polishing pad
USD684551S1 (en) * 2011-07-07 2013-06-18 Phuong Van Nguyen Wafer polishing pad holder
USD678745S1 (en) * 2011-07-07 2013-03-26 Phuong Van Nguyen Spinning insert polishing pad
WO2013089502A1 (en) * 2011-12-16 2013-06-20 Lg Siltron Inc. Apparatus and method for polishing wafer
USD769200S1 (en) * 2013-05-15 2016-10-18 Ebara Corporation Elastic membrane for semiconductor wafer polishing apparatus
GB2510457B (en) * 2013-11-12 2017-06-07 Rolls Royce Plc Method and apparatus for forming thin discs
CN104716090B (zh) * 2015-03-16 2017-07-18 中国航天科技集团公司第九研究院第七七一研究所 一种tsv晶圆表面抛光方法
WO2020203639A1 (ja) * 2019-04-03 2020-10-08 株式会社クラレ 研磨パッド
CN118116861B (zh) * 2024-01-24 2025-07-22 晋城市光机电产业协调服务中心(晋城市光机电产业研究院) 一种晶圆减薄用托盘及晶圆减薄方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53111594A (en) 1977-02-23 1978-09-29 Fujitsu Ltd Method of mounting workpiece on holder
US4519168A (en) * 1979-09-18 1985-05-28 Speedfam Corporation Liquid waxless fixturing of microsize wafers
JPH071759B2 (ja) 1990-05-10 1995-01-11 信越半導体株式会社 半導体ウェーハの研磨方法
US5177907A (en) 1991-11-12 1993-01-12 Summitt Molding & Engineering, Inc. Plastic lens block with ribs
JP3024373B2 (ja) * 1992-07-07 2000-03-21 信越半導体株式会社 シート状弾性発泡体及びウェーハ研磨加工用治具
CA2138410A1 (en) * 1992-07-17 1994-02-03 Lawrence W. Craighead Method of processing a lens and means for use in the method
US5584746A (en) * 1993-10-18 1996-12-17 Shin-Etsu Handotai Co., Ltd. Method of polishing semiconductor wafers and apparatus therefor
US5534106A (en) * 1994-07-26 1996-07-09 Kabushiki Kaisha Toshiba Apparatus for processing semiconductor wafers
US6126528A (en) * 1995-09-18 2000-10-03 3M Innovative Properties Company Preformed ophthalmic lens base block with textured surface
JPH09201765A (ja) * 1996-01-25 1997-08-05 Shin Etsu Handotai Co Ltd バッキングパッドおよび半導体ウエーハの研磨方法
JP3618220B2 (ja) * 1998-03-30 2005-02-09 信越半導体株式会社 薄板の研磨方法および薄板保持プレート
US6142853A (en) 1998-12-23 2000-11-07 Lucent Technologies, Inc. Method and apparatus for holding laser wafers during a fabrication process to minimize breakage
US6475068B1 (en) 1999-03-26 2002-11-05 Ibiden Co., Ltd. Wafer holding plate for wafer grinding apparatus and method for manufacturing the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1046462A3 (de) * 1999-03-26 2001-03-21 Ibiden Co., Ltd. Halteplatte für Scheiben bei Schleifmaschinen und Verfahren zur Herstellung dieser Platte
US6475068B1 (en) * 1999-03-26 2002-11-05 Ibiden Co., Ltd. Wafer holding plate for wafer grinding apparatus and method for manufacturing the same
US6916228B2 (en) 1999-03-26 2005-07-12 Ibiden Co., Ltd. Wafer holding plate for wafer grinding apparatus and method for manufacturing the same
US7029379B2 (en) 1999-03-26 2006-04-18 Ibiden Co., Ltd. Wafer holding plate for wafer grinding apparatus and method for manufacturing the same

Also Published As

Publication number Publication date
TW421622B (en) 2001-02-11
KR20000053507A (ko) 2000-08-25
EP1020253A3 (de) 2001-05-23
US6402594B1 (en) 2002-06-11
MY133452A (en) 2007-11-30

Similar Documents

Publication Publication Date Title
EP1020253A2 (de) Halbleiterpolierverfahren und Halterplatte
US6872127B2 (en) Polishing pad conditioning disks for chemical mechanical polisher
JP3605927B2 (ja) ウエハーまたは基板材料の再生方法
US6193587B1 (en) Apparatus and method for cleansing a polishing pad
EP1205280B1 (de) Halbleiterscheibepolierverfahren und vorrichtung
JP2002305168A (ja) 研磨方法及び研磨装置および半導体装置の製造方法
CN1299335C (zh) 晶片的研磨方法及晶片研磨用研磨垫
US6565705B2 (en) Wafer carrier used for chemical mechanic polishing
KR101052325B1 (ko) Ｃｍｐ 패드 컨디셔너 및 그 제조방법
JP3109558B2 (ja) ウエハ保持具
JP2006080329A (ja) 化学的機械的研磨装置
JPH06208980A (ja) 研磨装置
JPH09246216A (ja) 半導体ウェ−ハの製造方法
JP4793680B2 (ja) 半導体ウェーハの研磨方法
JPH11333703A (ja) ポリッシング加工機
JP3695842B2 (ja) ウエハの研磨装置及びウエハの研磨方法
KR200175263Y1 (ko) 화학적.기계적연마 장치의 폴리싱 패드용 콘디셔너의 구조
JPH03173129A (ja) 研磨装置
JP2000271864A (ja) ウェーハの研磨方法および研磨ブロック
JP2000308961A (ja) 貼付プレートおよびその製法
JP4202703B2 (ja) 研磨装置
JP3638138B2 (ja) ウエーハ保持盤の作製方法及びウエーハの研磨方法
EP1779971A1 (de) Vorrichtung zum Abrichten eines CMP-Polierkissens und Verfahrung zur Herstellung einer derartigen Vorrichtung
JP2005033139A (ja) 半導体ウェーハ研磨用のウェーハ保持板
KR100596094B1 (ko) 배치 드레싱-기계적 화학연마 장치 및 그 방법

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): DE GB

AX Request for extension of the european patent

Free format text: AL;LT;LV;MK;RO;SI

PUAL Search report despatched

Free format text: ORIGINAL CODE: 0009013

AK Designated contracting states

Kind code of ref document: A3

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE

AX Request for extension of the european patent

Free format text: AL;LT;LV;MK;RO;SI

17P Request for examination filed

Effective date: 20011102

AKX Designation fees paid

Free format text: DE GB

17Q First examination report despatched

Effective date: 20040602

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20041013