EP1034534A1 - Procede de fabrication d'une tete magnetique comportant une couche mince - Google Patents
Procede de fabrication d'une tete magnetique comportant une couche minceInfo
- Publication number
- EP1034534A1 EP1034534A1 EP99931254A EP99931254A EP1034534A1 EP 1034534 A1 EP1034534 A1 EP 1034534A1 EP 99931254 A EP99931254 A EP 99931254A EP 99931254 A EP99931254 A EP 99931254A EP 1034534 A1 EP1034534 A1 EP 1034534A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- face
- layer structure
- wear
- substrate
- resistant material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 38
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 7
- 239000010409 thin film Substances 0.000 title claims abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 48
- 239000000463 material Substances 0.000 claims abstract description 42
- 238000011282 treatment Methods 0.000 claims abstract description 15
- 230000008021 deposition Effects 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 33
- 230000001681 protective effect Effects 0.000 claims description 28
- 238000000151 deposition Methods 0.000 claims description 9
- 238000005498 polishing Methods 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 5
- 230000002463 transducing effect Effects 0.000 abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 239000000696 magnetic material Substances 0.000 description 3
- 229910019912 CrN Inorganic materials 0.000 description 2
- 229910019923 CrOx Inorganic materials 0.000 description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3916—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide
- G11B5/3919—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path
- G11B5/3922—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path the read-out elements being disposed in magnetic shunt relative to at least two parts of the flux guide structure
- G11B5/3925—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path the read-out elements being disposed in magnetic shunt relative to at least two parts of the flux guide structure the two parts being thin films
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3103—Structure or manufacture of integrated heads or heads mechanically assembled and electrically connected to a support or housing
- G11B5/3106—Structure or manufacture of integrated heads or heads mechanically assembled and electrically connected to a support or housing where the integrated or assembled structure comprises means for conditioning against physical detrimental influence, e.g. wear, contamination
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3967—Composite structural arrangements of transducers, e.g. inductive write and magnetoresistive read
Definitions
- the invention relates to a method of manufacturing a thin-film magnetic head having a head face, in which method a layer structure is formed on a substrate, whereafter a wear-resistant material is deposited on a surface constituted by a face of the substrate and a face of the layer structure.
- the invention also relates to a method of manufacturing a thin-film magnetic head having a head face, in which method a layer structure is formed on a substrate, whereafter a protective body is provided on the layer structure, and subsequently a wear-resistant material is deposited on a surface constituted by a face of the substrate, a face of the layer structure and a face of the protective body.
- Such a method is known from GB-A 2 269 931.
- the known method starts from a substrate, particularly a ferrite substrate, on which a layer structure constituted by magnetic layers, electrically conducting layers and insulation layers is formed, in which method the structure is realized in such a way that flux guides, transducing elements and transducing gaps are formed in the layer structure.
- the layer structure is protected by a counterblock of a non-magnetic material.
- a face is formed by grinding and/ or polishing, on which face Cr 2 O 3 is deposited for forming a wear-resistant layer constituting a contact face and having a thickness of between 10 and 100 nm.
- the magnetic head has the drawback that the wear-resistant layer which is present renders the head-to-medium distance, measured at the most critical position, namely at the location of the layer structure, relatively large so that considerable losses of information transfer which are coherent with said distance may occur during use. It is an object of the invention to provide a method of the type described in the opening paragraph, with which magnetic heads can be manufactured which are wear- resistant, on the one hand, but have only minimal transducing losses, on the other hand.
- the method according to the invention in which a layer structure is formed on a substrate, whereafter a wear-resistant material is deposited on a surface constituted by a face of the substrate and a face of the layer structure is therefore characterized in that, prior to depositing the wear-resistant material, the surface is selectively etched chemically, the face of the substrate being moved backwards with respect to the face of the layer structure, and subsequently, after deposition of the wear-resistant material, wear- resistant material is removed from the face of the layer structure by means of a mechanical treatment, and the head face is formed.
- the method according to the invention in which a layer structure is formed on a substrate, whereafter a protective body is provided on the layer structure, and subsequently a wear-resistant material is deposited on a surface constituted by a face of the substrate, a face of the layer structure and a face of the protective body is therefore characterized in that, prior to depositing the wear-resistant material, the surface is selectively etched chemically, the face of the substrate and the face of the protective body being moved backwards with respect to the face of the layer structure, and subsequently, after deposition of the wear-resistant material, wear-resistant material is removed from the face of the layer structure by means of a mechanical treatment, and the head face is formed.
- the face of the substrate and the face of the protective body, if any, are etched, but the face of the layer structure is not etched or etched only to a small extent so that, after etching, the layer structure projects at a head face side constituted by the surface with respect to the substrate and the protective body, if any.
- a non-magnetic material is preferably used as a wear-resistant material.
- Suitable, known materials are, for example, diamond-like carbon, CrN, CrO x and Cr 2 O 3 .
- a polishing and/or grinding treatment are examples of mechanical treatments.
- the mechanical treatment preferably includes lapping, such as band lapping, or polishing.
- a magnetic head obtained in accordance with one of the methods according to the invention has the advantage that the substrate and the protective body, if any, is, or are, protected adequately against wear during co-operation with a magnetic tape or magnetic disc without the protection used, i.e. the wear-resistant layer formed, necessarily leading to an increase of the head-to-medium distance.
- the transfer of information may therefore be equal to that of a magnetic head without a wear-resistant layer.
- the wear-protecting measure is not at the expense of loss of output of the magnetic head.
- the layer structure may comprise one or more write elements and/or one or more read elements, as well as one or more magnetic flux guides.
- Optimal results are achieved if, in the methods according to the invention.
- the wear-resistant material which is present on the face of the layer structure is removed completely. In this treatment, some material of the layer structure may also be removed.
- a magnetic information medium to be scanned and/or to be written directly bounds the layer structure during operation, so that transducing losses may be minimal.
- the methods according to the invention are eminently suitable for use with relatively soft substrate materials. For this reason, an embodiment is characterized in that the method starts from a substrate of a semiconductor material.
- the substrate is preferably provided with an integrated circuit.
- the semiconductor substrate is further preferably constituted by a silicon wafer. Integrated circuits may be formed, or may have been formed relatively easily in such a silicon wafer by means of known and conventional techniques.
- a silicon substrate can be chemically structured in a relatively easy manner, but such a substrate has the problem of a relatively small wear resistance.
- this problem is completely solved by using one of the methods according to the invention, in which the substrate is protected on the head face by a wear-resistant layer.
- a protective body it is preferred to use a body of a semiconductor material, particularly silicon. Because of the etching process, the substrate and the protective body are preferably made of one and the same material. When monocrystalline materials are used, the same crystal arrangement is preferably used for the same reason in the substrate and the protective body.
- the invention also relates to a magnetic head obtainable by means of one of the methods according to the invention.
- the magnetic head according to the invention is preferably implemented as defined in claim 8, 9 or 10.
- Fig. 1 is a diagrammatic perspective view of an embodiment of an assembly of a substrate, a layer structure and a protective body,
- Fig. 2 is a diagrammatic perspective view of the assembly after performing a selective etching process
- Fig. 3 is a diagrammatic perspective view of the assembly after performing the selective etching process and subsequently depositing wear-resistant material
- Fig. 4 is a diagrammatic perspective view of an embodiment of a magnetic head according to the invention
- Fig. 5 is a diagrammatic cross-section of the embodiment of the magnetic head under operating conditions.
- the method starts from a substrate 1 on which a layer structure 3 is formed, whereafter a counterblock or a protective body 5 is provided.
- the assembly thus formed is provided, for example, by means of polishing with a slightly curved surface 7 in this embodiment, constituting a head face side of the assembly.
- the surface 7 actually comprises a face la of the substrate 1 , a face 3a of the layer structure 3 and a face 5a of the protective body 5.
- the material of the substrate 1 and the protective body 5 is silicon in this embodiment.
- the layer structure 3 comprises layers of a magnetic material, such as SiO 2 or Al 2 O 3 , and layers of a ferromagnetic material such as an NiFe alloy or a CoZrNb alloy.
- the surface 7 is etched by using a chemical etching process which is selective for silicon but does not attack or hardly attacks the materials of the layer structure 3.
- a chemical etching process which is selective for silicon but does not attack or hardly attacks the materials of the layer structure 3.
- the faces la and 5a of the substrate 1 and the protective body 5, respectively are therefore moved backwards with respect to the face 3 a of the layer structure 3.
- the resultant new faces are denoted by la' and 5a', respectively, in Fig. 2.
- Silicon may be selectively etched, for example, in a KOH solution, preferably after a short HF immersion in a solution for the purpose of removing an oxide layer which may be present. Another suitable possibility is the use of reactive ion etching in SF 6 .
- etching took place for 20 seconds in a 1 % HF solution and for 100 seconds in a KOH solution at 70°C.
- the layer structure was hardly etched, while the face of the substrate and the protective body had moved backwards through a distance of approximately 500 nm.
- a wear-resistant material 9 such as CrN, CrO x or Cr 2 O 3 is deposited on the faces la', 3a and 5a' until a layer having a thickness of, for example, 50 or 100 nm is formed.
- the wear-resistant material 9 is removed from the face 3 a of the layer structure 3 by means of a mechanical treatment, for example a grinding and/or polishing treatment.
- a head face 10 is formed which actually comprises a face 1 la of a wear-resistant layer 11 formed on the substrate 1, a face 13a of the layer structure 3 and a face 15a of a wear-resistant layer 15 formed on the protective body 5.
- This face of the layer structure 3 mentioned here may be the face 3 a but may be alternatively a new face obtained during the mechanical treatment if material of the layer structure 3 itself is removed during said treatment.
- the faces 11a, 13a and 15a are preferably flush with each other, i.e. they merge steplessly.
- the embodiment of the magnetic head according to the invention has a substrate 2, a layer structure 3 and a protective body 5.
- the layer structure 3 comprises a magnetoresistive element 101, possibly provided with equipotential strips, a bias winding 103 and a magnetic yoke comprising a first magnetic layer 105 and a second, interrupted magnetic layer 107a, 107b.
- the layers 105 and 107a, 107b are formed, for example, from an NiFe alloy or a CoZrNb alloy.
- the layer structure 3 has a plurality of insulation layers 109 of, for example, SiO 2 or Al 2 O 3 which are used for insulating the magnetoresistive element 101, the bias winding 103 and the magnetic yoke with respect to one another.
- the magnetic head according to the invention has a head face 10 which comprises a face 11a of a wear-resistant layer 11 present on the substrate 1, a face 13a of the layer structure 3 and a face 15a of a wear-resistant layer 15 present on the protective body 5.
- the magnetic head co-operates with a magnetic recording medium, in this example a magnetic tape 201 which is movable with respect to the magnetic head in a direction x.
- the layer structure may be implemented in many other ways than is shown in the Figures. Instead of only one magnetoresistive element, several of these elements may be used.
- the layer structure may be alternatively provided with inductive elements. Moreover, materials other than the ones mentioned may be used.
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Magnetic Heads (AREA)
Abstract
L'invention concerne un procédé permettant de fabriquer une tête magnétique comportant une couche mince, résistant à l'usure et présentant des pertes de transduction minimales. Une structure en couche (3) est formée sur un substrat (1), un matériau (9) résistant à l'usure étant ensuite déposé sur une surface constituée par une face du substrat et une face de la structure en couche. Avant le dépôt du matériau résistant à l'usure, la surface est sélectivement gravée par attaque chimique, la face du substrat étant déplacée vers l'arrière par rapport à la face de la structure en couche. Après le dépôt du matériau résistant à l'usure, ce matériau est retiré de la face de la surface en couche au moyen d'un traitement mécanique, et une face de tête (10) est formée.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP99931254A EP1034534A1 (fr) | 1998-07-13 | 1999-07-02 | Procede de fabrication d'une tete magnetique comportant une couche mince |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP98202354 | 1998-07-13 | ||
| EP98202354 | 1998-07-13 | ||
| PCT/EP1999/004710 WO2000004534A1 (fr) | 1998-07-13 | 1999-07-02 | Procede de fabrication d'une tete magnetique comportant une couche mince |
| EP99931254A EP1034534A1 (fr) | 1998-07-13 | 1999-07-02 | Procede de fabrication d'une tete magnetique comportant une couche mince |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| EP1034534A1 true EP1034534A1 (fr) | 2000-09-13 |
Family
ID=8233922
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP99931254A Withdrawn EP1034534A1 (fr) | 1998-07-13 | 1999-07-02 | Procede de fabrication d'une tete magnetique comportant une couche mince |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP1034534A1 (fr) |
| JP (1) | JP2002520765A (fr) |
| CN (1) | CN1273664A (fr) |
| WO (1) | WO2000004534A1 (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2353136B (en) * | 1999-05-18 | 2003-08-06 | Hewlett Packard Co | Wear resistant magnetic write head |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL1015985C2 (nl) * | 2000-08-22 | 2002-03-11 | Onstream B V | Magneetkop. |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL7211910A (fr) * | 1972-09-01 | 1974-03-05 | ||
| US5687045A (en) * | 1991-09-20 | 1997-11-11 | Hitachi, Ltd. | Thin film magnetic head and production method thereof and magnetic disk drive equipped with this thin film magnetic head |
| JP2543641B2 (ja) * | 1991-11-18 | 1996-10-16 | 日本碍子株式会社 | 固定磁気ディスク装置用コアスライダおよびその製造方法 |
| DE4294247T1 (de) * | 1991-11-25 | 1994-01-13 | Digital Equipment Corp | Zwei-Schichten-Ätzprozess |
| JPH07182628A (ja) * | 1993-12-21 | 1995-07-21 | Hitachi Ltd | 磁気ヘッド、磁気記憶装置および磁気ディスク記憶装置 |
| JP3305880B2 (ja) * | 1994-01-25 | 2002-07-24 | ティーディーケイ株式会社 | 薄膜磁気ヘッド及び磁気記録再生装置 |
| US5617273A (en) * | 1995-06-07 | 1997-04-01 | International Business Machines Corporation | Thin film slider with protruding R/W element formed by chemical-mechanical polishing |
-
1999
- 1999-07-02 EP EP99931254A patent/EP1034534A1/fr not_active Withdrawn
- 1999-07-02 WO PCT/EP1999/004710 patent/WO2000004534A1/fr not_active Ceased
- 1999-07-02 CN CN 99801130 patent/CN1273664A/zh active Pending
- 1999-07-02 JP JP2000560573A patent/JP2002520765A/ja active Pending
Non-Patent Citations (1)
| Title |
|---|
| See references of WO0004534A1 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2353136B (en) * | 1999-05-18 | 2003-08-06 | Hewlett Packard Co | Wear resistant magnetic write head |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2000004534A1 (fr) | 2000-01-27 |
| JP2002520765A (ja) | 2002-07-09 |
| CN1273664A (zh) | 2000-11-15 |
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