EP1093142A2 - Actuateur électrostatique à mouvement double pour mems micro-relais - Google Patents

Actuateur électrostatique à mouvement double pour mems micro-relais Download PDF

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Publication number
EP1093142A2
EP1093142A2 EP20000203564 EP00203564A EP1093142A2 EP 1093142 A2 EP1093142 A2 EP 1093142A2 EP 20000203564 EP20000203564 EP 20000203564 EP 00203564 A EP00203564 A EP 00203564A EP 1093142 A2 EP1093142 A2 EP 1093142A2
Authority
EP
European Patent Office
Prior art keywords
substrate
micromachine
electrode
actuating
actuating electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP20000203564
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German (de)
English (en)
Inventor
David John Bishop
Cristian A. Bolle
Jungsang Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nokia of America Corp
Original Assignee
Lucent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lucent Technologies Inc filed Critical Lucent Technologies Inc
Publication of EP1093142A2 publication Critical patent/EP1093142A2/fr
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H59/00—Electrostatic relays; Electro-adhesion relays
    • H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics

Definitions

  • the present invention relates to micro-electromechanical systems (MEMS) and, more particularly, to electrostatic actuation of MEMS devices in flip-chip bonded geometry.
  • MEMS micro-electromechanical systems
  • Micro-electro-mechanical Systems have widespread uses in communications systems for performing, among other things, switching, relaying and wavelength routing functions. Electrostatic actuation is used to impart relative movement to thin membranes used in such devices. When thin membranes are brought into contact over a large area, the membranes tend to stick to each other due to surface-related attractive forces. Once this happens, it is difficult to separate the membranes due to the large surface-to-volume ratio, and the flexibility of the thin membranes. In surface micromachined devices where the mechanical devices are typically thin plates of structural materials like poly-crystalline silicon, this phenomenon is referred to as stiction. Since electrostatic actuation can only provide an attractive force, it is usually impossible to recover, e.g. to reset a device, once a micromachine sticks to the substrate. The only known way to recover is to mechanically detach the micromachine from the substrate with a needle probe.
  • CMOS relay devices use electrostatic actuation for moving two membranes into contact with each other to establish an electrical connection. Typical relays depend on mechanical restoration or spring forces to separate the two surfaces when electrical isolation between the two surfaces is necessary.
  • a known MEMS device 10 is shown in FIG. 1.
  • the device includes a substrate 12 and a mobile micromachine, such as a cantilever 14 having a movable end 18 and a fixed end 16 secured to substrate 12.
  • the cantilever 14 is controlled by an actuating electrode plate 20 which provides an electrostatic pulling force on cantilever 14 for moving edge 18 downward to substrate 12 when a voltage is applied between the cantilever 14 and the actuating electrode 20.
  • a contact electrode 22 is disposed underneath the cantilever 14 and serves as a switch contact for closing a switch when the cantilever end 18 is in a first position (an "on” condition) and for opening the switch when the cantilever end 18 is in a second position (an “off” condition).
  • a voltage must be continuously applied to the actuation electrode. When the voltage is no longer applied, (i.e. the switch is to be turned off), spring force in the cantilever causes end 18 to return to the second position.
  • this actuation mechanism has many advantages, it suffers from a few limitations. The most significant is that it can only provide an attractive force, and the resulting motion is thus in or toward a single direction. Another limitation is that when the contact material wears, the surface attraction force tends to increase. At the same time, and in particular for the device depicted in FIG. 10, as the mechanical cantilever fatigues, the restorative force tends to decrease. The combined effect causes the micro-relay to stick, resulting in device operation failure. Such failures are common in many MEMS devices where stiction destroys the mobility of the mechanical parts.
  • a dual motion micro-electromechanical actuator for imparting controlled motion in both first and second directions to a micromachine, such as a diaphragm or cantilever.
  • the actuator includes a first substrate upon which a first actuating electrode is formed, and a second substrate spatially separated from the first substrate, upon which a second actuating electrode is formed.
  • a micromachine is disposed between the first and second actuating electrodes.
  • one of the actuation electrodes is selectively activated, such as by the application of a voltage, an electrostatic attraction force is produced between the micromachine and the activated electrode for moving the micromachine in the direction of the activated electrode, i.e. toward either the first substrate or the second substrate.
  • the micromachine is configured as a cantilever having one end fixed to the first substrate, with the other end moveable between the first and second substrates.
  • a pair of contact electrodes are also included.
  • One of the contact electrodes is supported by the second substrate and the other contact electrode is supported by the micromachine.
  • the general concept of the inventive dual electrostatic actuator is demonstrated by an arrangement that includes three spaced-apart and parallel arranged conduction plates, namely an upper actuation electrode plate 42, a lower actuation electrode plate 44 and a middle electrode plate 46.
  • the upper and lower electrode plates are attached to separate substrates (not shown) and the middle plate is mechanically mobile relative to the top and bottom plates.
  • the middle plate is referred to as a micromachine and may be configured, for example, as a diaphragm, a cantilever, or other movable type component.
  • a first voltage source applies a voltage V 1 between the top plate 42 and micromachine 46 and a second voltage source applies a voltage V 2 between the bottom plate 44 and micromachine 46.
  • a positive (or negative) voltage V 1 is applied while V 2 is 0.
  • a positive (or negative) voltage is applied for V 2 while voltage V 1 is 0. In this manner, a positive actuation force may be imparted to the micromachine in either selected direction (upward or downward) depending on the desired direction of movement thereof.
  • the sizes of the plates 42, 44 and 46 range from about 1 to 10,000 microns per side, with a thickness of between about 0.01 to 10 microns.
  • the spacing between the plates is between about 0.5 and 500 microns.
  • the values for the voltages V 1 and V 2 are between about 0.1 and 500 V.
  • FIGs. 3a and 3b show a presently preferred embodiment of a MEMS relay.
  • the device like the prior art of FIG. 1, includes a substrate 12 and a movable micromachine, such as a cantilever 14 having a movable end 18 and a fixed end 16 secured to substrate 12.
  • the cantilever 14 is controlled by an actuating electrode plate 20 which provides an electrostatic pulling force on cantilever 14 for moving edge 18 downward to substrate 12 when a voltage is applied between the cantilever 14 and the actuating electrode 20.
  • a contact electrode 22 is disposed on the cantilever 14 and serves as a switch contact.
  • a second actuator section 50 for use with the single actuator 10 of FIG. 3a is depicted in FIG.
  • second actuator section 50 is combined with the single actuator 10 of FIG. 3a, a dual actuator device 60 is formed, as shown in FIGs. 4-6.
  • second substrate 52 is not depicted in FIG. 4.
  • the dual actuator device 60 is a mechanical relay employing a cantilever 14 as the mobile micromachine actuating member.
  • the cantilever may be fabricated of a conductive material or of an insulating material upon which a conductive material is deposited. End 16 of cantilever 14 is fixed to the lower substrate 12 and the first actuating electrode is disposed between the lower substrate and the cantilever.
  • a contact electrode 22 is formed on the cantilever for functioning, in this particular described embodiment, as a section of a relay switch. As explained above, when a voltage is applied to actuating electrode 20, an attraction force is produced for causing cantilever 14 to pivot about fixed end 16 so that moving end 18 is pulled down toward lower substrate 12.
  • a positive voltage is applied between actuating electrode 54 and the movable cantilever 14 which responsively generates an attraction electrostatic force for pulling cantilever 14 toward second substrate 52.
  • This causes contact electrode 22 disposed on cantilever 14 to become electrically connected to contact electrode 56 without relying on an inherent spring force of the cantilever 14.
  • a positive voltage will continue to be applied to second actuating electrode 54.
  • Another desired characteristic for a relay is the high open-state maximum voltage characteristic. This is the voltage that can be applied across the contact electrodes of the relay when the switch is open, without changing the relay status or damaging the relay itself.
  • a voltage across the contact electrodes themselves can act as an actuation force, that is, a voltage applied between the two contact electrodes will pull the contact electrodes together and tend to close the switch. Therefore, any design optimization to reduce the actuation voltage will also, in general, decrease the open-state maximum voltage in electrostatically actuated MEMS relays.
  • One added advantage of the inventive dual actuator design 60 is that the second actuation electrode 54 (used to actively open the switch) can be actively biased during the open state to counteract the force generated by large voltage difference across the contact electrodes. This effectively increases the open-state maximum voltage.
  • the preferred embodiment for the dual electrostatic actuator 60 utilizes a flip-chip bonded geometry.
  • the lower actuation electrode 20 and the mobile micromachine 14 are fabricated on a single substrate (e.g., substrate 12) using surface micromachining technology, while the upper actuation electrode 54 is fabricated on second substrate 52.
  • the upper actuation electrode 54 is to be assembled in an appropriate location with respect to the mobile micromachine 14 and the lower actuation electrode 20 by means of flip-chip bonding so that the produced electrostatic actuation force will be properly directed.
  • Spacers (not shown) of accurate thickness can be disposed between the upper and lower substrates to control the gap or spacing between the mobile micromachine 14 and upper actuation electrode 54; the spacing or gap between the mobile micromachine 14 and upper actuation electrode 54 determines the amount of force produced by the upper actuation electrode for a given voltage.
  • the preferred embodiment includes insulating layers 64, 65 and 66.
  • the insulating layers are preferably formed of silicon dioxide or silicon nitride. As shown in FIGs. 5 and 6, insulating layer 64 electrically isolates second substrate 52 from second actuating electrode 54, insulating layer 65 electrically isolates cantilever 14 from contact electrode 22, and insulating layer 66 electrically isolates first substrate 12 from the first actuating electrode 20.
  • electrical shorting between the actuating electrodes 20, 54 and the mobile micromachine cantilever 14 should be avoided because the high voltages required for actuation can cause spark welding of delicate micromachined components. Electrical shorting can be avoided by imbedding the actuation electrodes under an insulating layer 68, 69, also preferably formed of silicon dioxide or silicon nitride, or by shaping the actuation electrodes in such a manner that any regions of contact between the actuator electrodes and the micromachine have a potential difference of zero.

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EP20000203564 1999-10-15 2000-10-16 Actuateur électrostatique à mouvement double pour mems micro-relais Withdrawn EP1093142A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US41942299A 1999-10-15 1999-10-15
US419422 1999-10-15

Publications (1)

Publication Number Publication Date
EP1093142A2 true EP1093142A2 (fr) 2001-04-18

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JP (1) JP2001179699A (fr)
CA (1) CA2323189A1 (fr)

Cited By (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100387239B1 (ko) * 2001-04-26 2003-06-12 삼성전자주식회사 Ｍｅｍｓ 릴레이 및 그 제조방법
EP1343189A3 (fr) * 2002-03-06 2003-11-19 Murata Manufacturing Co., Ltd. Dispositif microélectroméchanique RF
WO2004046019A1 (fr) * 2002-11-19 2004-06-03 Baolab Microsystems S.L. Relais miniaturise et utilisations correspondantes
ES2217988A1 (es) * 2003-11-18 2004-11-01 Baolab Microsystems S.L. Circuito regulador y usos correspondientes.
EP1343190A3 (fr) * 2002-03-08 2005-04-20 Murata Manufacturing Co., Ltd. Elément à capacité variable
WO2008080086A1 (fr) * 2006-12-22 2008-07-03 Analog Devices, Inc. Procédé et dispositif de commande d'un commutateur
US7742215B2 (en) 2005-02-23 2010-06-22 Pixtronix, Inc. Methods and apparatus for spatial light modulation
US7746529B2 (en) 2005-02-23 2010-06-29 Pixtronix, Inc. MEMS display apparatus
US7782026B2 (en) 2004-05-19 2010-08-24 Baolab Microsystems S.L. Regulator circuit and corresponding uses
CN101510486B (zh) * 2009-03-24 2011-01-05 中北大学 微致动开关
US8018307B2 (en) 2003-06-26 2011-09-13 Nxp B.V. Micro-electromechanical device and module and method of manufacturing same
US8115989B2 (en) 2009-09-17 2012-02-14 Qualcomm Mems Technologies, Inc. Anti-stiction electrode
US8411281B2 (en) 2010-11-24 2013-04-02 Denso Corporation Fabry-perot interferometer having an increased spectral band
US8482496B2 (en) 2006-01-06 2013-07-09 Pixtronix, Inc. Circuits for controlling MEMS display apparatus on a transparent substrate
US8520285B2 (en) 2008-08-04 2013-08-27 Pixtronix, Inc. Methods for manufacturing cold seal fluid-filled display apparatus
US8519945B2 (en) 2006-01-06 2013-08-27 Pixtronix, Inc. Circuits for controlling display apparatus
US8519923B2 (en) 2005-02-23 2013-08-27 Pixtronix, Inc. Display methods and apparatus
US8526096B2 (en) 2006-02-23 2013-09-03 Pixtronix, Inc. Mechanical light modulators with stressed beams
US8599463B2 (en) 2008-10-27 2013-12-03 Pixtronix, Inc. MEMS anchors
WO2014063958A2 (fr) 2012-10-22 2014-05-01 Commissariat à l'énergie atomique et aux énergies alternatives Recuperateur d'energie
US9082353B2 (en) 2010-01-05 2015-07-14 Pixtronix, Inc. Circuits for controlling display apparatus
US9087486B2 (en) 2005-02-23 2015-07-21 Pixtronix, Inc. Circuits for controlling display apparatus
US9135868B2 (en) 2005-02-23 2015-09-15 Pixtronix, Inc. Direct-view MEMS display devices and methods for generating images thereon
US9134552B2 (en) 2013-03-13 2015-09-15 Pixtronix, Inc. Display apparatus with narrow gap electrostatic actuators
US9158106B2 (en) 2005-02-23 2015-10-13 Pixtronix, Inc. Display methods and apparatus
US9176318B2 (en) 2007-05-18 2015-11-03 Pixtronix, Inc. Methods for manufacturing fluid-filled MEMS displays
US9229222B2 (en) 2005-02-23 2016-01-05 Pixtronix, Inc. Alignment methods in fluid-filled MEMS displays
US9261694B2 (en) 2005-02-23 2016-02-16 Pixtronix, Inc. Display apparatus and methods for manufacture thereof
US9336732B2 (en) 2005-02-23 2016-05-10 Pixtronix, Inc. Circuits for controlling display apparatus
US9500853B2 (en) 2005-02-23 2016-11-22 Snaptrack, Inc. MEMS-based display apparatus
CN112038091A (zh) * 2020-08-04 2020-12-04 厚元技术（香港）有限公司 一种基于mems结构的可调电容

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KR100492004B1 (ko) * 2002-11-01 2005-05-30 한국전자통신연구원 미세전자기계적 시스템 기술을 이용한 고주파 소자
KR100599115B1 (ko) 2004-07-20 2006-07-12 삼성전자주식회사 진동형 멤스 스위치 및 그 제조방법
US7751173B2 (en) 2006-02-09 2010-07-06 Kabushiki Kaisha Toshiba Semiconductor integrated circuit including circuit for driving electrostatic actuator, micro-electro-mechanical systems, and driving method of electrostatic actuator
JP4703585B2 (ja) * 2006-02-09 2011-06-15 株式会社東芝 半導体集積回路及び静電型アクチュエータの駆動方法
US7928333B2 (en) * 2009-08-14 2011-04-19 General Electric Company Switch structures
US20140267443A1 (en) * 2013-03-14 2014-09-18 Qualcomm Mems Technologies, Inc. Electromechanical systems device with segmented electrodes
KR101823329B1 (ko) * 2016-04-04 2018-01-30 주식회사 풍산 전기식 기폭관용 mems 릴레이 및 이를 이용한 포일 폭발형 전기식 기폭장치

Cited By (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100387239B1 (ko) * 2001-04-26 2003-06-12 삼성전자주식회사 Ｍｅｍｓ 릴레이 및 그 제조방법
EP1343189A3 (fr) * 2002-03-06 2003-11-19 Murata Manufacturing Co., Ltd. Dispositif microélectroméchanique RF
US6713695B2 (en) 2002-03-06 2004-03-30 Murata Manufacturing Co., Ltd. RF microelectromechanical systems device
EP1343190A3 (fr) * 2002-03-08 2005-04-20 Murata Manufacturing Co., Ltd. Elément à capacité variable
US7027284B2 (en) 2002-03-08 2006-04-11 Murata Manufacturing Co., Ltd. Variable capacitance element
WO2004046019A1 (fr) * 2002-11-19 2004-06-03 Baolab Microsystems S.L. Relais miniaturise et utilisations correspondantes
CN100410165C (zh) * 2002-11-19 2008-08-13 宝兰微系统公司 小型继电器和相应的用途
US7446300B2 (en) 2002-11-19 2008-11-04 Baolab Microsystems, S. L. Miniature electro-optic device having a conductive element for modifying the state of passage of light between inlet/outlet points and corresponding uses thereof
US7876182B2 (en) 2002-11-19 2011-01-25 Baolab Microsystems S. L. Miniaturized relay and corresponding uses
US8018307B2 (en) 2003-06-26 2011-09-13 Nxp B.V. Micro-electromechanical device and module and method of manufacturing same
ES2217988A1 (es) * 2003-11-18 2004-11-01 Baolab Microsystems S.L. Circuito regulador y usos correspondientes.
US7782026B2 (en) 2004-05-19 2010-08-24 Baolab Microsystems S.L. Regulator circuit and corresponding uses
US8519923B2 (en) 2005-02-23 2013-08-27 Pixtronix, Inc. Display methods and apparatus
US9087486B2 (en) 2005-02-23 2015-07-21 Pixtronix, Inc. Circuits for controlling display apparatus
US7746529B2 (en) 2005-02-23 2010-06-29 Pixtronix, Inc. MEMS display apparatus
US7927654B2 (en) 2005-02-23 2011-04-19 Pixtronix, Inc. Methods and apparatus for spatial light modulation
US7742215B2 (en) 2005-02-23 2010-06-22 Pixtronix, Inc. Methods and apparatus for spatial light modulation
US9500853B2 (en) 2005-02-23 2016-11-22 Snaptrack, Inc. MEMS-based display apparatus
US9336732B2 (en) 2005-02-23 2016-05-10 Pixtronix, Inc. Circuits for controlling display apparatus
US9274333B2 (en) 2005-02-23 2016-03-01 Pixtronix, Inc. Alignment methods in fluid-filled MEMS displays
US9261694B2 (en) 2005-02-23 2016-02-16 Pixtronix, Inc. Display apparatus and methods for manufacture thereof
US9229222B2 (en) 2005-02-23 2016-01-05 Pixtronix, Inc. Alignment methods in fluid-filled MEMS displays
US9177523B2 (en) 2005-02-23 2015-11-03 Pixtronix, Inc. Circuits for controlling display apparatus
US9158106B2 (en) 2005-02-23 2015-10-13 Pixtronix, Inc. Display methods and apparatus
US9135868B2 (en) 2005-02-23 2015-09-15 Pixtronix, Inc. Direct-view MEMS display devices and methods for generating images thereon
US8519945B2 (en) 2006-01-06 2013-08-27 Pixtronix, Inc. Circuits for controlling display apparatus
US8482496B2 (en) 2006-01-06 2013-07-09 Pixtronix, Inc. Circuits for controlling MEMS display apparatus on a transparent substrate
US9128277B2 (en) 2006-02-23 2015-09-08 Pixtronix, Inc. Mechanical light modulators with stressed beams
US8526096B2 (en) 2006-02-23 2013-09-03 Pixtronix, Inc. Mechanical light modulators with stressed beams
CN101563745B (zh) * 2006-12-22 2014-09-03 美国亚德诺半导体公司 用于驱动开关的方法和装置
WO2008080086A1 (fr) * 2006-12-22 2008-07-03 Analog Devices, Inc. Procédé et dispositif de commande d'un commutateur
US9176318B2 (en) 2007-05-18 2015-11-03 Pixtronix, Inc. Methods for manufacturing fluid-filled MEMS displays
US8891152B2 (en) 2008-08-04 2014-11-18 Pixtronix, Inc. Methods for manufacturing cold seal fluid-filled display apparatus
US8520285B2 (en) 2008-08-04 2013-08-27 Pixtronix, Inc. Methods for manufacturing cold seal fluid-filled display apparatus
US9116344B2 (en) 2008-10-27 2015-08-25 Pixtronix, Inc. MEMS anchors
US8599463B2 (en) 2008-10-27 2013-12-03 Pixtronix, Inc. MEMS anchors
US9182587B2 (en) 2008-10-27 2015-11-10 Pixtronix, Inc. Manufacturing structure and process for compliant mechanisms
CN101510486B (zh) * 2009-03-24 2011-01-05 中北大学 微致动开关
US8115989B2 (en) 2009-09-17 2012-02-14 Qualcomm Mems Technologies, Inc. Anti-stiction electrode
US9082353B2 (en) 2010-01-05 2015-07-14 Pixtronix, Inc. Circuits for controlling display apparatus
US8411281B2 (en) 2010-11-24 2013-04-02 Denso Corporation Fabry-perot interferometer having an increased spectral band
WO2014063958A2 (fr) 2012-10-22 2014-05-01 Commissariat à l'énergie atomique et aux énergies alternatives Recuperateur d'energie
US9647578B2 (en) 2012-10-22 2017-05-09 Commissariat à l'énergie atomique et aux énergies alternatives Energy harvester
US9134552B2 (en) 2013-03-13 2015-09-15 Pixtronix, Inc. Display apparatus with narrow gap electrostatic actuators
CN112038091A (zh) * 2020-08-04 2020-12-04 厚元技术（香港）有限公司 一种基于mems结构的可调电容
CN112038091B (zh) * 2020-08-04 2022-08-19 厚元技术（香港）有限公司 一种基于mems结构的可调电容
US12142441B2 (en) 2020-08-04 2024-11-12 Accula Technologies Hong Kong Company Limited MEMS structure-based adjustable capacitor

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JP2001179699A (ja) 2001-07-03
CA2323189A1 (fr) 2001-04-15

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