EP1104061A3 - Halbleiterlaserfeld und optischer abtaster - Google Patents

Halbleiterlaserfeld und optischer abtaster Download PDF

Info

Publication number: EP1104061A3
Authority: EP; European Patent Office
Prior art keywords: semiconductor laser; laser array; optical scanner; mount; chip
Prior art date: 1999-11-29
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

EP00126100A

Other languages

English (en)

French (fr)

Other versions

EP1104061A2 (de

EP1104061B1 (de

Inventor

Yasuo c/o Canon Kabusiki Kaisha Suzuki

Kazuhiko c/o Canon Kabusiki Kaisha Ito

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Canon Inc

Original Assignee

Canon Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1999-11-29

Filing date

2000-11-29

Publication date

2002-11-13

2000-11-29 Application filed by Canon Inc filed Critical Canon Inc

2001-05-30 Publication of EP1104061A2 publication Critical patent/EP1104061A2/de

2002-11-13 Publication of EP1104061A3 publication Critical patent/EP1104061A3/de

2006-03-01 Application granted granted Critical

2006-03-01 Publication of EP1104061B1 publication Critical patent/EP1104061B1/de

2020-11-29 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Links

239000004065 semiconductor Substances 0.000 title abstract 3
230000003287 optical effect Effects 0.000 title abstract 2
229910000679 solder Inorganic materials 0.000 abstract 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
- H01S5/0237—Fixing laser chips on mounts by soldering
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings

Landscapes

Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Electromagnetism (AREA)
Optics & Photonics (AREA)
Semiconductor Lasers (AREA)
Mechanical Optical Scanning Systems (AREA)
Laser Beam Printer (AREA)
Facsimile Heads (AREA)

EP00126100A 1999-11-29 2000-11-29 Halbleiterlaserfeld und optischer Abtaster Expired - Lifetime EP1104061B1 (de)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP33844999		1999-11-29
JP33844999A JP2001156379A (ja)	1999-11-29	1999-11-29	半導体レーザアレイおよび光走査装置

Publications (3)

Publication Number	Publication Date
EP1104061A2 EP1104061A2 (de)	2001-05-30
EP1104061A3 true EP1104061A3 (de)	2002-11-13
EP1104061B1 EP1104061B1 (de)	2006-03-01

Family

ID=18318269

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
EP00126100A Expired - Lifetime EP1104061B1 (de)	1999-11-29	2000-11-29	Halbleiterlaserfeld und optischer Abtaster

Country Status (4)

Country	Link
US (1)	US6867796B1 (de)
EP (1)	EP1104061B1 (de)
JP (1)	JP2001156379A (de)
DE (1)	DE60026220T2 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2006313875A (ja) *	2005-04-08	2006-11-16	Mitsubishi Electric Corp	半導体レーザ装置
JP2009130206A (ja)	2007-11-26	2009-06-11	Mitsubishi Electric Corp	半導体発光装置及びその製造方法
US10297976B2 (en) *	2015-05-19	2019-05-21	Ii-Vi Laser Enterprise Gmbh	Low thermal resistance, stress-controlled diode laser assemblies

Citations (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS61206286A (ja) *	1985-03-09	1986-09-12	Sony Corp	半導体レ−ザ装置の製造方法
JPS63131104A (ja) *	1986-11-20	1988-06-03	Nippon Telegr & Teleph Corp <Ntt>	ハイブリツド光集積回路
US4916710A (en) *	1988-06-27	1990-04-10	Mitsubishi Denki Kabushiki Kaisha	Multi-point emission type semiconductor laser device therefor
JPH0918087A (ja) *	1995-06-27	1997-01-17	Nec Corp	マルチビーム半導体レーザ装置
WO1997025641A2 (de) *	1996-01-09	1997-07-17	Siemens Aktiengesellschaft	Optoelektronische sendebaugruppe
EP0823760A2 (de) *	1996-08-06	1998-02-11	The Furukawa Electric Co., Ltd.	Vielfachhalbleiterlaseranordnung
JPH1039173A (ja) *	1996-05-23	1998-02-13	Ricoh Co Ltd	光モジュール
JPH1048557A (ja) *	1996-07-30	1998-02-20	Canon Inc	走査光学装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2539878B2 (ja)	1988-02-12	1996-10-02	三菱電機株式会社	レ―ザプリンタ用半導体レ―ザ装置の駆動方法
JPH0522530A (ja)	1991-07-17	1993-01-29	Canon Inc	レーザ光源装置
JP3377553B2 (ja)	1993-05-13	2003-02-17	三菱電機株式会社	半導体レーザ装置
JPH1158828A (ja)	1997-08-14	1999-03-02	Fuji Xerox Co Ltd	レーザアレイ画像形成装置

1999
- 1999-11-29 JP JP33844999A patent/JP2001156379A/ja active Pending
2000
- 2000-11-24 US US09/718,364 patent/US6867796B1/en not_active Expired - Fee Related
- 2000-11-29 EP EP00126100A patent/EP1104061B1/de not_active Expired - Lifetime
- 2000-11-29 DE DE60026220T patent/DE60026220T2/de not_active Expired - Lifetime

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS61206286A (ja) *	1985-03-09	1986-09-12	Sony Corp	半導体レ−ザ装置の製造方法
JPS63131104A (ja) *	1986-11-20	1988-06-03	Nippon Telegr & Teleph Corp <Ntt>	ハイブリツド光集積回路
US4916710A (en) *	1988-06-27	1990-04-10	Mitsubishi Denki Kabushiki Kaisha	Multi-point emission type semiconductor laser device therefor
JPH0918087A (ja) *	1995-06-27	1997-01-17	Nec Corp	マルチビーム半導体レーザ装置
WO1997025641A2 (de) *	1996-01-09	1997-07-17	Siemens Aktiengesellschaft	Optoelektronische sendebaugruppe
JPH1039173A (ja) *	1996-05-23	1998-02-13	Ricoh Co Ltd	光モジュール
JPH1048557A (ja) *	1996-07-30	1998-02-20	Canon Inc	走査光学装置
EP0823760A2 (de) *	1996-08-06	1998-02-11	The Furukawa Electric Co., Ltd.	Vielfachhalbleiterlaseranordnung

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 011, no. 041 (E - 478) 6 February 1987 (1987-02-06) *
PATENT ABSTRACTS OF JAPAN vol. 012, no. 388 (P - 771) 17 October 1988 (1988-10-17) *
PATENT ABSTRACTS OF JAPAN vol. 1997, no. 05 30 May 1997 (1997-05-30) *
PATENT ABSTRACTS OF JAPAN vol. 1998, no. 06 30 April 1998 (1998-04-30) *

Also Published As

Publication number	Publication date
EP1104061A2 (de)	2001-05-30
DE60026220D1 (de)	2006-04-27
EP1104061B1 (de)	2006-03-01
DE60026220T2 (de)	2006-11-16
JP2001156379A (ja)	2001-06-08
US6867796B1 (en)	2005-03-15

Legal Events

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2002-09-27	PUAL	Search report despatched	Free format text: ORIGINAL CODE: 0009013
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2003-05-21	17P	Request for examination filed	Effective date: 20030327
2003-06-18	17Q	First examination report despatched	Effective date: 20030430
2003-07-30	AKX	Designation fees paid	Designated state(s): DE FR GB IT
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2005-09-06	GRAS	Grant fee paid	Free format text: ORIGINAL CODE: EPIDOSNIGR3
2006-01-13	GRAA	(expected) grant	Free format text: ORIGINAL CODE: 0009210
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