EP1145298A3 - Verfahren zur herstellung von schottky-dioden - Google Patents

Verfahren zur herstellung von schottky-dioden

Info

Publication number: EP1145298A3
Authority: EP; European Patent Office
Prior art keywords: schottky diodes; producing schottky; producing; diodes; schottky
Prior art date: 1998-05-26
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Withdrawn

Application number

EP99934481A

Other languages

English (en)

French (fr)

Other versions

EP1145298A2 (de

Inventor

Reinhard Losehand

Hubert Werthmann

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Infineon Technologies AG

Original Assignee

Infineon Technologies AG

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1998-05-26

Filing date

1999-05-11

Publication date

2002-11-20

1999-05-11 Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG

2001-10-17 Publication of EP1145298A2 publication Critical patent/EP1145298A2/de

2002-11-20 Publication of EP1145298A3 publication Critical patent/EP1145298A3/de

Status Withdrawn legal-status Critical Current

Links

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/01—Manufacture or treatment
- H10D8/051—Manufacture or treatment of Schottky diodes
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/60—Schottky-barrier diodes

EP99934481A 1998-05-26 1999-05-11 Verfahren zur herstellung von schottky-dioden Withdrawn EP1145298A3 (de)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
DE19823482		1998-05-26
DE19823482		1998-05-26
PCT/DE1999/001429 WO1999062113A2 (de)	1998-05-26	1999-05-11	Verfahren zur herstellung von schottky-dioden

Publications (2)

Publication Number	Publication Date
EP1145298A2 EP1145298A2 (de)	2001-10-17
EP1145298A3 true EP1145298A3 (de)	2002-11-20

Family

ID=7868961

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
EP99934481A Withdrawn EP1145298A3 (de)	1998-05-26	1999-05-11	Verfahren zur herstellung von schottky-dioden

Country Status (4)

Country	Link
US (1)	US6551911B1 (de)
EP (1)	EP1145298A3 (de)
JP (1)	JP2003514371A (de)
WO (1)	WO1999062113A2 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US8338906B2 (en) *	2008-01-30	2012-12-25	Taiwan Semiconductor Manufacturing Co., Ltd.	Schottky device

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4107719A (en) *	1975-02-19	1978-08-15	Siemens Aktiengesellschaft	Inverse planar transistor
US4414737A (en)	1981-01-30	1983-11-15	Tokyo Shibaura Denki Kabushiki Kaisha	Production of Schottky barrier diode
US4796069A (en) *	1981-05-13	1989-01-03	International Business Machines Corporation	Schottky diode having limited area self-aligned guard ring and method for making same
US4691435A (en) *	1981-05-13	1987-09-08	International Business Machines Corporation	Method for making Schottky diode having limited area self-aligned guard ring
JPS60157268A (ja) *	1984-01-26	1985-08-17	Rohm Co Ltd	シヨツトキバリアダイオ−ド
US4835580A (en) *	1987-04-30	1989-05-30	Texas Instruments Incorporated	Schottky barrier diode and method
JPH0618276B2 (ja) *	1988-11-11	1994-03-09	サンケン電気株式会社	半導体装置
CA2008176A1 (en)	1989-01-25	1990-07-25	John W. Palmour	Silicon carbide schottky diode and method of making same
WO1991004581A1 (en) *	1989-09-21	1991-04-04	Unisearch Limited	Guard barrier for schottky barrier devices
JP2809826B2 (ja) *	1990-06-29	1998-10-15	三菱電機株式会社	半導体装置の製造方法
JP2002517091A (ja) *	1998-05-26	2002-06-11	インフィネオンテクノロジースアクチエンゲゼルシャフト	ショットキーダイオードを製造するための方法
US6066884A (en) *	1999-03-19	2000-05-23	Lucent Technologies Inc.	Schottky diode guard ring structures

1999
- 1999-05-11 EP EP99934481A patent/EP1145298A3/de not_active Withdrawn
- 1999-05-11 WO PCT/DE1999/001429 patent/WO1999062113A2/de not_active Ceased
- 1999-05-11 JP JP2000551431A patent/JP2003514371A/ja active Pending
2000
- 2000-01-26 US US09/491,767 patent/US6551911B1/en not_active Expired - Lifetime

Also Published As

Publication number	Publication date
EP1145298A2 (de)	2001-10-17
WO1999062113A3 (de)	2002-10-03
WO1999062113A2 (de)	1999-12-02
JP2003514371A (ja)	2003-04-15
US6551911B1 (en)	2003-04-22

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Legal Events

Date	Code	Title	Description
2001-08-31	PUAI	Public reference made under article 153(3) epc to a published international application that has entered the european phase	Free format text: ORIGINAL CODE: 0009012
2001-10-17	17P	Request for examination filed	Effective date: 20000121
2001-10-17	AK	Designated contracting states	Kind code of ref document: A2 Designated state(s): DE FI FR GB IT NL
2001-10-17	XX	Miscellaneous (additional remarks)	Free format text: DERZEIT SIND DIE WIPO-PUBLIKATIONSDATEN A3 NICHT VERFUEGBAR.
2002-10-04	PUAK	Availability of information related to the publication of the international search report	Free format text: ORIGINAL CODE: 0009015
2002-11-20	AK	Designated contracting states	Kind code of ref document: A3 Designated state(s): DE FI FR GB IT NL
2004-12-24	STAA	Information on the status of an ep patent application or granted ep patent	Free format text: STATUS: THE APPLICATION HAS BEEN WITHDRAWN
2005-02-09	18W	Application withdrawn	Effective date: 20041221