EP1220230A3 - Circuit et procédé pour le test d'une mémoire ferroélectrique - Google Patents

Circuit et procédé pour le test d'une mémoire ferroélectrique Download PDF

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Publication number
EP1220230A3
EP1220230A3 EP01309859A EP01309859A EP1220230A3 EP 1220230 A3 EP1220230 A3 EP 1220230A3 EP 01309859 A EP01309859 A EP 01309859A EP 01309859 A EP01309859 A EP 01309859A EP 1220230 A3 EP1220230 A3 EP 1220230A3
Authority
EP
European Patent Office
Prior art keywords
ferroelectric memory
memory device
testing
memory cells
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP01309859A
Other languages
German (de)
English (en)
Other versions
EP1220230A2 (fr
Inventor
David C. Mcclure
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics lnc USA
Original Assignee
STMicroelectronics lnc USA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics lnc USA filed Critical STMicroelectronics lnc USA
Publication of EP1220230A2 publication Critical patent/EP1220230A2/fr
Publication of EP1220230A3 publication Critical patent/EP1220230A3/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G11C2029/5004—Voltage

Landscapes

  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
EP01309859A 2000-12-29 2001-11-23 Circuit et procédé pour le test d'une mémoire ferroélectrique Withdrawn EP1220230A3 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/751,986 US6584007B2 (en) 2000-12-29 2000-12-29 Circuit and method for testing a ferroelectric memory device
US751986 2000-12-29

Publications (2)

Publication Number Publication Date
EP1220230A2 EP1220230A2 (fr) 2002-07-03
EP1220230A3 true EP1220230A3 (fr) 2004-06-16

Family

ID=25024360

Family Applications (1)

Application Number Title Priority Date Filing Date
EP01309859A Withdrawn EP1220230A3 (fr) 2000-12-29 2001-11-23 Circuit et procédé pour le test d'une mémoire ferroélectrique

Country Status (2)

Country Link
US (2) US6584007B2 (fr)
EP (1) EP1220230A3 (fr)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10102432B4 (de) * 2001-01-19 2005-09-22 Infineon Technologies Ag Testschaltung zur analogen Messung von Bitleitungssignalen ferroelektrischer Speicherzellen
DE10143033A1 (de) * 2001-09-01 2003-04-03 Infineon Technologies Ag Verfahren zum Zugreifen auf Speicherzellen eines DRAM-Speicherbausteins
US6754094B2 (en) * 2002-01-31 2004-06-22 Stmicroelectronics, Inc. Circuit and method for testing a ferroelectric memory device
KR100506459B1 (ko) * 2003-09-08 2005-08-05 주식회사 하이닉스반도체 불휘발성 강유전체 메모리 장치
KR100569585B1 (ko) * 2003-12-05 2006-04-10 주식회사 하이닉스반도체 내부 전원 드라이버 제어 회로
JP2008234780A (ja) * 2007-03-22 2008-10-02 Toshiba Microelectronics Corp 半導体記憶装置
KR100878315B1 (ko) * 2007-08-14 2009-01-14 주식회사 하이닉스반도체 반도체 집적회로
KR101069674B1 (ko) * 2009-06-08 2011-10-04 주식회사 하이닉스반도체 반도체 메모리 장치 및 이의 테스트 방법
US8922236B2 (en) * 2010-09-10 2014-12-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and method for inspecting the same
KR102398144B1 (ko) * 2014-09-26 2022-05-13 래디언트 테크놀러지즈, 인코포레이티드 강유전체 커패시터들을 이용하는 cmos 아날로그 메모리들
US9881661B2 (en) 2016-06-03 2018-01-30 Micron Technology, Inc. Charge mirror-based sensing for ferroelectric memory
US9697913B1 (en) 2016-06-10 2017-07-04 Micron Technology, Inc. Ferroelectric memory cell recovery
US11443175B2 (en) * 2018-07-11 2022-09-13 Silicon Storage Technology, Inc. Compensation for reference transistors and memory cells in analog neuro memory in deep learning artificial neural network

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5254482A (en) * 1990-04-16 1993-10-19 National Semiconductor Corporation Ferroelectric capacitor test structure for chip die
US5274583A (en) * 1992-01-02 1993-12-28 National Semiconductor Corporation Charge-integrating preamplifier for ferroelectric memory
DE19813706A1 (de) * 1997-08-12 1999-02-18 Mitsubishi Electric Corp Integrierte Halbleiter-Schaltungsvorrichtung
US5909394A (en) * 1998-08-24 1999-06-01 Taiwan Semiconductor Manufacturing Co., Ltd. Precharge circuit for preventing invalid output pulses caused by current sensing circuits in flash memory devices
US6031777A (en) * 1998-06-10 2000-02-29 Integrated Silicon Solution, Inc. Fast on-chip current measurement circuit and method for use with memory array circuits
US6046926A (en) * 1997-10-15 2000-04-04 Kabushiki Kaisha Toshiba Ferroelectric memory and screening method therefor

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6122492A (ja) * 1984-07-11 1986-01-31 Hitachi Ltd ダイナミツク型ｒａｍ
JP3348298B2 (ja) 1992-10-08 2002-11-20 ソニー株式会社 カセット収納ケース
US5608679A (en) * 1994-06-02 1997-03-04 Intel Corporation Fast internal reference cell trimming for flash EEPROM memory
JP3774500B2 (ja) * 1995-05-12 2006-05-17 株式会社ルネサステクノロジ 半導体記憶装置
US5764577A (en) * 1997-04-07 1998-06-09 Motorola, Inc. Fusleless memory repair system and method of operation
JPH1117123A (ja) * 1997-06-23 1999-01-22 Rohm Co Ltd 不揮発性記憶素子
JP3727157B2 (ja) * 1997-11-19 2005-12-14 Ｎｅｃエレクトロニクス株式会社 半導体記憶装置及びその試験方法
JPH11154400A (ja) * 1997-11-21 1999-06-08 Toshiba Corp 半導体記憶装置およびそのテスト方法
JPH11261017A (ja) * 1998-03-16 1999-09-24 Fujitsu Ltd 半導体記憶装置
JP4587500B2 (ja) * 1998-11-11 2010-11-24 ルネサスエレクトロニクス株式会社 半導体集積回路、メモリモジュール、記憶媒体、及び半導体集積回路の救済方法
JP3775716B2 (ja) * 2000-05-25 2006-05-17 シャープ株式会社 強誘電体型記憶装置およびそのテスト方法
US6359819B1 (en) * 2000-12-29 2002-03-19 Stmicroelectronics, Inc.. Circuit and method for performing a stress test on a ferroelectric memory device
US6590799B1 (en) * 2002-05-29 2003-07-08 Agilent Technologies, Inc. On-chip charge distribution measurement circuit

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5254482A (en) * 1990-04-16 1993-10-19 National Semiconductor Corporation Ferroelectric capacitor test structure for chip die
US5274583A (en) * 1992-01-02 1993-12-28 National Semiconductor Corporation Charge-integrating preamplifier for ferroelectric memory
DE19813706A1 (de) * 1997-08-12 1999-02-18 Mitsubishi Electric Corp Integrierte Halbleiter-Schaltungsvorrichtung
US6046926A (en) * 1997-10-15 2000-04-04 Kabushiki Kaisha Toshiba Ferroelectric memory and screening method therefor
US6031777A (en) * 1998-06-10 2000-02-29 Integrated Silicon Solution, Inc. Fast on-chip current measurement circuit and method for use with memory array circuits
US5909394A (en) * 1998-08-24 1999-06-01 Taiwan Semiconductor Manufacturing Co., Ltd. Precharge circuit for preventing invalid output pulses caused by current sensing circuits in flash memory devices

Also Published As

Publication number Publication date
US20030206462A1 (en) 2003-11-06
US20020085406A1 (en) 2002-07-04
US6584007B2 (en) 2003-06-24
US6816400B2 (en) 2004-11-09
EP1220230A2 (fr) 2002-07-03

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