EP1237198A1 - Capteur de rayonnement et détecteur de rayonnement pour un tomographe assisté par ordinateur - Google Patents

Capteur de rayonnement et détecteur de rayonnement pour un tomographe assisté par ordinateur Download PDF

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Publication number
EP1237198A1
EP1237198A1 EP02100166A EP02100166A EP1237198A1 EP 1237198 A1 EP1237198 A1 EP 1237198A1 EP 02100166 A EP02100166 A EP 02100166A EP 02100166 A EP02100166 A EP 02100166A EP 1237198 A1 EP1237198 A1 EP 1237198A1
Authority
EP
European Patent Office
Prior art keywords
sensor
radiation
temperature
radiation sensor
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP02100166A
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German (de)
English (en)
Inventor
Gereon Dr. Vogtmeier
Francisco Dr. Morales Serrano
Stefan Dr. Schneider
Olaf Dr. Such
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Intellectual Property and Standards GmbH
Koninklijke Philips NV
Original Assignee
Philips Intellectual Property and Standards GmbH
Philips Corporate Intellectual Property GmbH
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Intellectual Property and Standards GmbH, Philips Corporate Intellectual Property GmbH, Koninklijke Philips Electronics NV filed Critical Philips Intellectual Property and Standards GmbH
Publication of EP1237198A1 publication Critical patent/EP1237198A1/fr
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers

Definitions

  • the invention relates to a radiation sensor in an integrated design and a Radiation detector with at least one such radiation sensor and an associated one Evaluation.
  • Radiation sensors with an integrated, microelectronic design have at least one light and / or X-ray sensitive sensor element arranged on a chip, wherein the sensor element provides an output signal, the strength of which is from the sensor element indicates the amount of radiation absorbed.
  • Such an X-ray sensor is e.g. in the DE 42 27 096 A1 discloses. Radiation sensors used for light and / or x-rays are sensitive, are described in DE 40 02 429 A1, EP 0 434 154 B1 and EP 0 440 282 B1.
  • Such a radiation sensor typically contains one Larger number of sensor elements arranged in a matrix.
  • the sensor elements can For example, in the case of a chip implemented in CMOS technology, it is designed as a photodiode his.
  • the functional relationship between the output signal of a sensor element and The amount of radiation absorbed depends on various factors, in particular the temperature prevailing on the chip plays a major role. For this Basically, it is desirable to compensate for the factors mentioned in order to get the real thing To be able to determine the value of the amount of radiation absorbed more precisely.
  • two of the on a photosensor chip existing photo elements as reference elements for compensation purposes Reservations. These reference elements do not become like all other photo elements exposed to measuring light, but one of them is covered by a metallic layer completely shielded from light, while an external electrical current is impressed on the other becomes.
  • the two reference elements thus represent the state of minimal or maximum illumination of a light-sensitive photo element, the corresponding Output signals of the reference elements are subjected to the same processing as the output signals of the other photo elements. So from the two reference elements obtained reference values can be used by the evaluation electronics to Correct the output signals of the measuring photo elements accordingly. In this way different interferences, which affect the generation and Processing of the output signal of a light-sensitive photo element, in particular temperature and voltage fluctuations, production-related Tolerances and the like. A separate recording of the individual influences is, however not possible.
  • the radiation sensor contains an integrated design at least one light and / or X-ray sensitive sensor element, the Output signal shows the amount of radiation absorbed by it. Furthermore, the Radiation sensor at least one temperature sensor, the output signal of which on Temperature sensor shows prevailing temperature.
  • a temperature sensor is thus integrated on the chip of the radiation sensor, through which a direct and precise determination of the temperature at the radiation sensor is possible.
  • This temperature corresponds to the temperature at which the entire radiation sensor chip is located, since this has an almost homogeneous temperature distribution due to its small expansion.
  • the exact arrangement of the temperature sensor is therefore usually not critical.
  • the temperature sensor is preferably arranged in such a way that in each case it detects a temperature value that is as representative as possible. This is the case, for example, in the middle or at a symmetrically located position on the chip.
  • the temperature sensor By knowing the temperature prevailing on the chip, it is possible to compensate the output signals delivered by the light and / or X-ray sensitive sensor elements with regard to their temperature behavior, so that the true value of the amount of radiation absorbed can be determined.
  • a maximum precision of the temperature measurement is achieved, which could not be achieved with an externally arranged temperature sensor.
  • the integration of such a temperature sensor can be implemented particularly inexpensively in the course of the production of the radiation sensor chip.
  • Sensors can also distribute several temperature sensors on the radiation sensor chip can be arranged so that, if necessary, a temperature distribution on the chip and / or an average temperature can be determined.
  • this relates to a radiation sensor in Integrated design, which in turn is at least one sensitive to light and / or X-rays Contains sensor element, the output signal of which from the sensor element indicates the amount of radiation absorbed.
  • the radiation sensor also contains at least one Another sensor element, which for a different physical size than the light and / or X-ray sensitive sensor elements is sensitive, the light and / or X-ray sensitive Sensor elements and the other sensor element of the same type Deliver output signals and as similar components to an evaluation unit can be connected.
  • the further sensor element can be, for example, a sensor for a Magnetic field, for an acceleration, for an electromagnetic radiation outside the already measured frequency range (X-rays when the primary sensor elements are sensitive to light; Light when the primary sensor elements are sensitive to X-rays are; UV; Infrared; etc.), for a force or a pressure or for chemical Trade substances.
  • a sensor for a Magnetic field for an acceleration, for an electromagnetic radiation outside the already measured frequency range (X-rays when the primary sensor elements are sensitive to light; Light when the primary sensor elements are sensitive to X-rays are; UV; Infrared; etc.), for a force or a pressure or for chemical Trade substances.
  • it can also be a Act temperature sensor, the output signal of which prevails at the temperature sensor Temperature.
  • the output signal of this additional sensor element is basically of the same type as the output signal of the light and / or X-ray sensitive Sensor elements, for example with analog signals Voltage signal, a charge signal or a current signal, or in the case of digital signals Signal of the same bit width as the digital output signals of the sensor elements.
  • the light and / or X-ray sensitive sensor elements and the further sensor element therefore use the same data format, which creates a prerequisite for them as Components of the same type can be connected to an evaluation unit.
  • the evaluation unit therefore does not differentiate according to whether it is an output signal from a light and / or X-ray sensitive sensor element or an output signal of the reads in further sensor elements.
  • the explained design of the radiation sensor has the advantage that no special evaluation electronics is required for the other sensor element or elements, but that this reading can be carried out by the same evaluation unit, which also is responsible for the light and / or X-ray sensitive sensor elements.
  • the light and / or X-ray sensitive Sensor elements on the radiation sensor in matrix form in rows and columns arranged.
  • a temperature sensor in an integrated design, it preferably contains a current mirror two parallel paths, in which the same current flow prevails.
  • a bipolar transistor In both paths a bipolar transistor is arranged with its emitter-collector path, the Base of this transistor is short-circuited to the collector.
  • the areas of the bipolar transistors are different sizes. With such an arrangement the current arising in the current paths is approximately proportional to the temperature of the Bipolar transistors.
  • a temperature sensor constructed in the manner described can have a further current mirror have parallel to the two current paths mentioned, the output current this current mirror is coupled out as an output current signal of the temperature sensor and for an evaluation can be used.
  • a voltage as the output signal of the temperature sensor to win.
  • the difference between the Emitter-base voltages of the two bipolar transistors from a decoupling circuit determined and then provided as an output voltage for an external tap.
  • the invention further relates to a radiation detector, which is used as an X-ray detector is particularly suitable for use in an X-ray computer tomograph.
  • the Radiation detector contains at least one radiation sensor of the type explained above and an associated evaluation unit for reading and evaluating the radiation sensor provided output signals.
  • the radiation sensor accordingly contains one on the chip integrated temperature sensor or another sensor element, and preferably that of This sensor element used data format the same as that of the light and / or X-ray sensitive sensor elements.
  • the evaluation unit of the imaging The system can then output the light and / or X-ray sensitive signals Treat sensor elements and the other sensor element in the same way, so that none different circuits for the different sensor elements are required. The Rather, differentiated evaluation of the various signals is based solely on the one used Software controlled.
  • the evaluation unit is preferably set up so that they the output signals of the light and / or X-ray sensitive sensor elements of the radiation sensor with the help of the Temperature sensor measured temperature value corrected.
  • the output signals hang a light and / or X-ray sensitive element such as of a photodiode on a CMOS chip is very different from that prevailing on the chip Temperature.
  • the relationships are basically known, so that when they are known the temperature arithmetically or by means of a suitable circuit Compensation for the temperature can be carried out.
  • the microchip integrated temperature sensor allows particularly high precision the correction, since the temperature value recorded with it is very precise and virtually without Delay in time corresponds to the true temperature of the sensor element.
  • Evaluation unit can be set up so that it uses the measured temperature value Diagnosis of the operating state of the radiation sensor can perform. So can for example, malfunction of the chip or the area surrounding the chip to an unusual Increase in temperature on the chip, which is above the measured Temperature value can be detected. Likewise, aging of the chip can result from elevated temperatures can be determined by the temperature sensor. After all, it is at more complex arrangements with multiple radiation sensor chips, such as those in particular a computer tomograph can also be found, the spatial Determine temperature distribution and thereby unfavorable or incorrect temperature distributions recognizable in the arrangement. Increased by using the temperature sensor the reliability of the imaging system is therefore considerably higher.
  • the X-ray detector contains essentially a radiation sensor chip 10 and an associated one Evaluation unit 13.
  • the radiation sensor chip 10 is preferably in CMOS technology produced and contains light-sensitive materials arranged in a matrix-like manner on a detector surface Sensor elements 11.
  • the output voltage generated by a photodiode depends, among other things. heavily of the temperature at which the photodiode works. About this dependency compensate and precisely from the output signal of the photodiode 11 to the absorbed To be able to close the amount of light, it is therefore important to adjust the temperature of the photodiode 11 to know as exactly as possible.
  • This knowledge of the temperature is achieved according to the invention at least one temperature sensor 12 arranged on the chip 10 is obtained. Because on The chip 10 generally sets an approximately homogeneous temperature distribution precise geometric arrangement of the temperature sensor 12 is less critical. Different from in Figure 1, however, the temperature sensor can also be in the center or be arranged in a central area of the chip 10 in order to ensure one as possible to determine a representative temperature value. Furthermore, several such Temperature sensors can be provided, from which the temperature signal is redundant or can be determined as the mean. By integrating the temperature sensor 12 on the microchip 10, temperature measurement is particularly simple, without the need for additional parts or components outside the chip.
  • the temperature sensor 12 is set up in such a way that it is evaluated by the evaluation unit 13 can be treated identically to the photopixels 11 so that its addressing, its Control and the reading process can run accordingly.
  • the Temperature sensor 12 how the photodiodes 11 get a row / column address (Z ', S'), through which he can be addressed.
  • FIG. 2 shows a possible circuit for a temperature sensor 12a integrated on a chip 10, at whose output a current signal I out is emitted.
  • the entire microchip is implemented using CMOS technology, the CMOS transistors T 3 , T 4 , T 5 and T 6 representing a current mirror.
  • the current mirror consists of two parallel current paths between the supply voltage V CC and ground GND, namely a first path via transistors T 5 and T 3 on the one hand and a second path via transistors T 6 and T 4 and resistor R on the other.
  • the transistors are located in the current paths over their emitter-collector paths.
  • the bases of the transistors T 5 and T 6 and the transistors T 3 and T 4 are coupled.
  • the bases of transistors T 5 and T 6 are connected to the connecting line between transistors T 6 and T 4
  • the bases of transistors T 3 and T 4 are connected to the connecting line between transistors T 5 and T 3 .
  • a bipolar transistor T 1 or T 2 is also integrated via the emitter-collector path, the collectors being connected to ground (GND).
  • the bipolar transistors T 1 and T 2 differ only in the areas by a factor n.
  • the resistor R sets the current I through the current paths. This current I is directly proportional to the absolute temperature of the two bipolar transistors.
  • the current I is in turn reflected with the aid of the CMOS transistor T 7 on the output as the output current I out , in which case an amplification factor may also be used.
  • a variant of the circuit described is shown as a temperature sensor 12b in FIG. 3.
  • a temperature sensor 12b There is not a current signal at the output, but a voltage signal V out .
  • the difference in the emitter-base voltages of the two bipolar transistors T 1 and T 2 is determined in the circuit with the aid of a differential amplifier A.
  • the output voltage is also proportional to the temperature of both transistors. If the differential amplifier has a gain factor, it is possible to influence the slope of the temperature characteristic.

Landscapes

  • Measurement Of Radiation (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Apparatus For Radiation Diagnosis (AREA)
EP02100166A 2001-02-22 2002-02-21 Capteur de rayonnement et détecteur de rayonnement pour un tomographe assisté par ordinateur Withdrawn EP1237198A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10108430 2001-02-22
DE10108430A DE10108430A1 (de) 2001-02-22 2001-02-22 Strahlungssensor und Strahlungsdetektor für einen Computertomographen

Publications (1)

Publication Number Publication Date
EP1237198A1 true EP1237198A1 (fr) 2002-09-04

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EP02100166A Withdrawn EP1237198A1 (fr) 2001-02-22 2002-02-21 Capteur de rayonnement et détecteur de rayonnement pour un tomographe assisté par ordinateur

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US (1) US20020131626A1 (fr)
EP (1) EP1237198A1 (fr)
JP (1) JP2002277556A (fr)
DE (1) DE10108430A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9526468B2 (en) 2014-09-09 2016-12-27 General Electric Company Multiple frame acquisition for exposure control in X-ray medical imagers

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6654443B1 (en) 2002-02-25 2003-11-25 Ge Medical Systems Global Technology Co., Llc Thermal sensing detector cell for a computed tomography system and method of manufacturing same
US20050109935A1 (en) * 2003-10-30 2005-05-26 Manlove Gregory J. Sensor and method of transmitting data in multiple protocols
US20050109111A1 (en) * 2003-10-30 2005-05-26 Delphi Technologies, Inc. Sensor and method of transmitting sensor data
JP4528547B2 (ja) * 2004-03-30 2010-08-18 株式会社東芝 半導体放射線検出器の劣化異常検出装置
EP1997144A2 (fr) * 2006-03-15 2008-12-03 Koninklijke Philips Electronics N.V. Dispositif semi-conducteur destiné à la détection de rayonnements
DE102006037633B4 (de) * 2006-08-10 2008-06-19 Infineon Technologies Ag Halbleiterchip mit Beschädigungs-Detektierschaltung und ein Verfahren zum Herstellen eines Halbleiterchips
DE102007054832A1 (de) 2007-11-16 2009-05-14 Siemens Ag Flachbilddetektor mit Temperatursensor
KR101052164B1 (ko) * 2008-11-27 2011-07-26 한국원자력연구원 방사선 및 가스 동시 측정센서 및 이의 제조방법
JPWO2023190086A1 (fr) * 2022-03-29 2023-10-05

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US5420419A (en) * 1992-06-19 1995-05-30 Honeywell Inc. Camera for producing video output signal, infrared focal plane array package for such camera, and method and apparatus for generating video signals from passive focal plane array of elements on a semiconductor substrate
WO1999003262A1 (fr) * 1997-07-07 1999-01-21 Institut Für Mikroelektronik Stuttgart Procede et configuration de circuit pour compenser les fluctuations dans les capteurs d'images cmos, dues a la temperature, a la tension et a la fabrication.
EP0957630A2 (fr) * 1998-05-11 1999-11-17 Hewlett-Packard Company Architecture d'amplificateur de colonne dans un capteur d'image à pixel actif
JP2001251556A (ja) * 2000-03-08 2001-09-14 Minolta Co Ltd 固体撮像装置

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JPH07191769A (ja) * 1993-12-27 1995-07-28 Toshiba Corp 基準電流発生回路
US6515285B1 (en) * 1995-10-24 2003-02-04 Lockheed-Martin Ir Imaging Systems, Inc. Method and apparatus for compensating a radiation sensor for ambient temperature variations
JPH10332494A (ja) * 1997-06-03 1998-12-18 Oki Data:Kk 温度検出回路、駆動装置及びプリンタ
US6256404B1 (en) * 1997-10-10 2001-07-03 Analogic Corporation Computed tomography scanning apparatus and method using adaptive reconstruction window
US6297671B1 (en) * 1998-09-01 2001-10-02 Texas Instruments Incorporated Level detection by voltage addition/subtraction

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Publication number Priority date Publication date Assignee Title
US5420419A (en) * 1992-06-19 1995-05-30 Honeywell Inc. Camera for producing video output signal, infrared focal plane array package for such camera, and method and apparatus for generating video signals from passive focal plane array of elements on a semiconductor substrate
WO1999003262A1 (fr) * 1997-07-07 1999-01-21 Institut Für Mikroelektronik Stuttgart Procede et configuration de circuit pour compenser les fluctuations dans les capteurs d'images cmos, dues a la temperature, a la tension et a la fabrication.
EP0957630A2 (fr) * 1998-05-11 1999-11-17 Hewlett-Packard Company Architecture d'amplificateur de colonne dans un capteur d'image à pixel actif
JP2001251556A (ja) * 2000-03-08 2001-09-14 Minolta Co Ltd 固体撮像装置

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9526468B2 (en) 2014-09-09 2016-12-27 General Electric Company Multiple frame acquisition for exposure control in X-ray medical imagers

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JP2002277556A (ja) 2002-09-25
US20020131626A1 (en) 2002-09-19
DE10108430A1 (de) 2002-09-05

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