EP1294534A1 - Verfahren und vorrichtung zur "in-situ" überwachung der dicke während des chemisch-mechanischen planiervorganges - Google Patents

Verfahren und vorrichtung zur "in-situ" überwachung der dicke während des chemisch-mechanischen planiervorganges

Info

Publication number
EP1294534A1
EP1294534A1 EP01937595A EP01937595A EP1294534A1 EP 1294534 A1 EP1294534 A1 EP 1294534A1 EP 01937595 A EP01937595 A EP 01937595A EP 01937595 A EP01937595 A EP 01937595A EP 1294534 A1 EP1294534 A1 EP 1294534A1
Authority
EP
European Patent Office
Prior art keywords
polishing
substrate
monitoring system
inductor
signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP01937595A
Other languages
English (en)
French (fr)
Other versions
EP1294534B1 (de
EP1294534B2 (de
Inventor
Hiroji Hanawa
Nils Johansson
Boguslaw A. Swedek
Manoocher Birang
Fritz C. Redeker
Rajeev Bajaj
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/574,008 external-priority patent/US6924641B1/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to EP05077315A priority Critical patent/EP1618991B1/de
Publication of EP1294534A1 publication Critical patent/EP1294534A1/de
Publication of EP1294534B1 publication Critical patent/EP1294534B1/de
Application granted granted Critical
Publication of EP1294534B2 publication Critical patent/EP1294534B2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/013—Devices or means for detecting lapping completion
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
    • B24B49/04—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent involving measurement of the workpiece at the place of grinding during grinding operation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/10—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means

Definitions

  • in-situ monitoring of the substrate has been performed, e.g., with optical or capacitance sensors, in order to detect the polishing endpoint.
  • Other proposed endpoint detection techniques have involved measurements of friction, motor current, slurry chemistry, acoustics and conductivity.
  • One detection technique that has been considered is to induce an eddy current in the metal layer and measure the change in the eddy current as the metal layer is removed.
  • Another reoccurring problem in CMP is dishing of the substrate surface when polishing a filler layer to expose an underlying layer. Specifically, once the underlying layer is exposed, the portion of the filler layer located between the raised areas of the patterned underlying layer can be overpolished, creating concave depressions in the substrate surface. Dishing can render the substrate unsuitable for integrated circuit fabrication, thereby lowering process yield.
  • the core may consists essentially of ferrite, and may includes two prongs and a connecting portion between the two prongs.
  • the first coil may be wound around the connecting portion, and the second coil may be wound around at least one of the two prongs.
  • the second coil and the capacitor may be connected in parallel.
  • the sensor may be positioned on a side of a polishing pad opposite the substrate.
  • the polishing pad may includes an upper layer and a lower layer, and an aperture may be formed in at least a portion of the lower layer adjacent the core.
  • a computer may receive the output signal.
  • the invention is directed to a chemical mechanical polishing apparatus.
  • the apparatus has a polishing pad, a carrier to hold a substrate against a first side of the polishing surface, an eddy current sensor, and a motor coupled to at least one of the polishing pad and carrier head for generating relative motion therebetween.
  • the sensor includes at least one inductor positioned on a second side of the polishing pad opposite the substrate, an oscillator electrically coupled to the at least one inductor to induce an alternating current in the coil and generate an alternating magnetic field, and a capacitor electrically coupled to the at least one inductor.
  • Implementations of the invention may include one or more of the following features.
  • a platen may support the polishing pad, and the at least one inductor may be positioned in a recess in a top surface of the platen.
  • the platen may rotates, and a position sensor may determine an angular position of the platen and a controller to sample data from the eddy current sensor when the at least one inductor is positioned adjacent the substrate.
  • a recess may be formed in the second side of the polishing pad.
  • the polishing pad may include a cover layer on the first side of the polishing pad and a backing layer on the second side of the polishing pad, and the recess may be formed by removing a portion of the backing layer.
  • FIG. 3B is a schematic top view of a platen from the polishing station of FIG. 3 A.
  • FIG. 4 is a schematic circuit diagram of the eddy current monitoring system.
  • FIG. 5 is a schematic cross-sectional view illustrating a magnetic field generated by the eddy current monitoring system.
  • the substrate backing assembly 212 includes a flexible internal membrane 216, a flexible external membrane 218, an internal support structure 220, an external support structure 230, an internal spacer ring 222 and an external spacer ring 232.
  • the flexible internal membrane 216 includes a central portion which applies pressure to the wafer 10 in a controllable area.
  • the volume between the base assembly 204 and the internal membrane 216 that is sealed by an inner flap 244 provides the pressurizable floating lower chamber 234.
  • the annular volume between the base assembly 204 and the internal membrane 216 that is sealed by the inner flap 244 and outer flap 246 defines the pressurizable floating upper chamber 236.
  • the sealed volume between the internal membrane 216 and the external membrane 218 defines a pressurizable outer chamber 238.
  • the computer could determine that the endpoint criteria have been satisfied for the outer radial ranges but not for the inner radial ranges. This would indicate that the underlying layer has been exposed in an annular outer area but not in an inner area of the substrate. In this case, the computer could reduce the diameter of the area in which pressure is applied so that pressure is applied only to the inner area of the substrate, thereby reducing dishing and erosion on the outer area of the substrate.

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
  • Length Measuring Devices With Unspecified Measuring Means (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
EP01937595A 2000-05-19 2001-05-18 Verfahren und vorrichtung zur "in-situ" überwachung der dicke während des chemisch-mechanischen planiervorganges Expired - Lifetime EP1294534B2 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP05077315A EP1618991B1 (de) 2000-05-19 2001-05-18 Polierkissen

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US574008 1995-12-18
US09/574,008 US6924641B1 (en) 2000-05-19 2000-05-19 Method and apparatus for monitoring a metal layer during chemical mechanical polishing
US21722800P 2000-07-10 2000-07-10
US217228P 2000-07-10
US22166800P 2000-07-27 2000-07-27
US221668P 2000-07-27
PCT/US2001/016290 WO2001089765A1 (en) 2000-05-19 2001-05-18 In-situ endpoint detection and process monitoring method and apparatus for chemical mechanical polishing

Related Child Applications (1)

Application Number Title Priority Date Filing Date
EP05077315A Division EP1618991B1 (de) 2000-05-19 2001-05-18 Polierkissen

Publications (3)

Publication Number Publication Date
EP1294534A1 true EP1294534A1 (de) 2003-03-26
EP1294534B1 EP1294534B1 (de) 2006-01-18
EP1294534B2 EP1294534B2 (de) 2006-01-25

Family

ID=27396396

Family Applications (1)

Application Number Title Priority Date Filing Date
EP01937595A Expired - Lifetime EP1294534B2 (de) 2000-05-19 2001-05-18 Verfahren und vorrichtung zur "in-situ" überwachung der dicke während des chemisch-mechanischen planiervorganges

Country Status (7)

Country Link
EP (1) EP1294534B2 (de)
JP (4) JP5542293B2 (de)
KR (1) KR100827871B1 (de)
AT (1) ATE315980T1 (de)
DE (3) DE60116757T4 (de)
TW (1) TW496812B (de)
WO (1) WO2001089765A1 (de)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8485862B2 (en) 2000-05-19 2013-07-16 Applied Materials, Inc. Polishing pad for endpoint detection and related methods
US6608495B2 (en) 2001-03-19 2003-08-19 Applied Materials, Inc. Eddy-optic sensor for object inspection
US6966816B2 (en) * 2001-05-02 2005-11-22 Applied Materials, Inc. Integrated endpoint detection system with optical and eddy current monitoring
US6811466B1 (en) 2001-12-28 2004-11-02 Applied Materials, Inc. System and method for in-line metal profile measurement
US7001242B2 (en) * 2002-02-06 2006-02-21 Applied Materials, Inc. Method and apparatus of eddy current monitoring for chemical mechanical polishing
JP2005517290A (ja) * 2002-02-06 2005-06-09 アプライド　マテリアルズ　インコーポレイテッド 渦電流モニタリングシステムを備えた化学機械的研磨の為の方法及び装置
DE10310262A1 (de) 2002-03-28 2003-10-23 Esec Trading Sa Einrichtung für die Montage von Halbleiterchips
EP1349199A1 (de) * 2002-03-28 2003-10-01 Esec Trading S.A. Einrichtung für die Montage von Halbleiterchips
US7205166B2 (en) * 2002-06-28 2007-04-17 Lam Research Corporation Method and apparatus of arrayed, clustered or coupled eddy current sensor configuration for measuring conductive film properties
US7112961B2 (en) 2002-12-13 2006-09-26 Applied Materials, Inc. Method and apparatus for dynamically measuring the thickness of an object
US6788050B2 (en) * 2002-12-23 2004-09-07 Lam Research Corp. System, method and apparatus for thin-film substrate signal separation using eddy current
KR100902893B1 (ko) * 2003-01-13 2009-06-16 엘지전자 주식회사 광디스크 표면의 기계적 내구성 검사 장치 및 방법
US7008296B2 (en) * 2003-06-18 2006-03-07 Applied Materials, Inc. Data processing for monitoring chemical mechanical polishing
JP2005051076A (ja) * 2003-07-29 2005-02-24 Trecenti Technologies Inc 半導体装置の製造方法
US7112960B2 (en) 2003-07-31 2006-09-26 Applied Materials, Inc. Eddy current system for in-situ profile measurement
KR100947230B1 (ko) 2003-09-16 2010-03-11 엘지전자 주식회사 광디스크 표면의 기계적 내구성 검사 장치 및 방법
EP1758711B1 (de) * 2004-06-21 2013-08-07 Ebara Corporation Poliervorrichtung und polierverfahren
JP2006128563A (ja) * 2004-11-01 2006-05-18 Toyo Tire & Rubber Co Ltd 半導体ウエハ研磨用研磨パッドおよび半導体デバイスの製造方法
JP2009026850A (ja) * 2007-07-18 2009-02-05 Elpida Memory Inc Ｃｍｐ装置及びｃｍｐによるウェハー研磨方法
JP2009033038A (ja) * 2007-07-30 2009-02-12 Elpida Memory Inc Ｃｍｐ装置及びｃｍｐによるウェハー研磨方法
JP4319692B2 (ja) 2007-09-03 2009-08-26 株式会社東京精密 研磨終了時点の予測・検出方法とその装置並びにリアルタイム膜厚モニタ方法とその装置
JP5495493B2 (ja) * 2008-02-07 2014-05-21 株式会社東京精密 膜厚測定装置、及び膜厚測定方法
DE102008021569A1 (de) 2008-04-30 2009-11-05 Advanced Micro Devices, Inc., Sunnyvale System und Verfahren zur optischen Endpunkterkennung während des CMP unter Anwendung eines substratüberspannenenden Signals
JP5513795B2 (ja) * 2009-07-16 2014-06-04 株式会社荏原製作所 研磨方法および装置
JP5513821B2 (ja) * 2009-09-17 2014-06-04 株式会社荏原製作所 渦電流センサ、研磨装置、めっき装置、研磨方法、めっき方法
US9023667B2 (en) * 2011-04-27 2015-05-05 Applied Materials, Inc. High sensitivity eddy current monitoring system
US9308618B2 (en) 2012-04-26 2016-04-12 Applied Materials, Inc. Linear prediction for filtering of data during in-situ monitoring of polishing
US9067295B2 (en) * 2012-07-25 2015-06-30 Applied Materials, Inc. Monitoring retaining ring thickness and pressure control
US9205527B2 (en) * 2012-11-08 2015-12-08 Applied Materials, Inc. In-situ monitoring system with monitoring of elongated region
US9636797B2 (en) * 2014-02-12 2017-05-02 Applied Materials, Inc. Adjusting eddy current measurements
JP6423600B2 (ja) * 2014-03-12 2018-11-14 株式会社荏原製作所 膜厚測定装置、及び、研磨装置
TW201710029A (zh) 2015-09-01 2017-03-16 荏原製作所股份有限公司 渦電流檢測器
JP6779633B2 (ja) 2016-02-23 2020-11-04 株式会社荏原製作所 研磨装置
CN106985059B (zh) * 2017-04-27 2018-12-28 厦门大学 一种空心球体内外球面研抛方法及装置
CN107520740A (zh) * 2017-09-18 2017-12-29 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） 一种化学机械抛光中光谱终点的检测方法、装置及系统
CN111316403B (zh) * 2018-03-12 2024-12-13 应用材料公司 在抛光原位监测期间的滤波
TWI689081B (zh) 2018-10-02 2020-03-21 華邦電子股份有限公司 非揮發性記憶體裝置的製造方法
TWI850338B (zh) * 2019-02-28 2024-08-01 美商應用材料股份有限公司 拋光墊、化學機械拋光系統、及控制拋光墊的背襯層的剛度的方法
CN117597215A (zh) 2021-07-06 2024-02-23 应用材料公司 使用光学传感器的化学机械抛光振动测量
CN120129586A (zh) * 2022-10-27 2025-06-10 应用材料公司 利用平台中的传感器进行载体头声波监测

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4005359A (en) * 1975-11-07 1977-01-25 Smoot William N Resonant frequency measuring device for gauging coating thickness
JPS5842902A (ja) * 1981-09-08 1983-03-12 Toyo Seikan Kaisha Ltd プレスの打抜き不良検出装置
US4829251A (en) * 1983-08-31 1989-05-09 Helmut Fischer Electromagnetic probe for measuring the thickness of thin coatings on magnetic substrates
JPS63212804A (ja) * 1987-02-28 1988-09-05 Sumitomo Metal Ind Ltd 膜厚測定方法
US5355083A (en) * 1988-11-16 1994-10-11 Measurex Corporation Non-contact sensor and method using inductance and laser distance measurements for measuring the thickness of a layer of material overlaying a substrate
DE4002083A1 (de) * 1990-01-25 1991-08-01 Hoechst Ag Flaechen- oder schlauchfoermige folie auf basis von cellulosehydrat
JP3431115B2 (ja) * 1995-03-28 2003-07-28 アプライド マテリアルズ インコーポレイテッド ケミカルメカニカルポリシングの操作をインシチュウでモニタするための装置及び方法
US5893796A (en) * 1995-03-28 1999-04-13 Applied Materials, Inc. Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus
US5559428A (en) * 1995-04-10 1996-09-24 International Business Machines Corporation In-situ monitoring of the change in thickness of films
US5660672A (en) * 1995-04-10 1997-08-26 International Business Machines Corporation In-situ monitoring of conductive films on semiconductor wafers
US5644221A (en) * 1996-03-19 1997-07-01 International Business Machines Corporation Endpoint detection for chemical mechanical polishing using frequency or amplitude mode
JP3303963B2 (ja) * 1997-01-20 2002-07-22 株式会社東京精密 ウェーハの厚み加工量測定装置
JP2973404B2 (ja) * 1997-07-11 1999-11-08 株式会社東京精密 ウェーハ研磨装置
JP3001051B2 (ja) * 1997-08-22 2000-01-17 日本電気株式会社 半導体ウェハ研磨終点検出装置
US6068539A (en) * 1998-03-10 2000-05-30 Lam Research Corporation Wafer polishing device with movable window
US6162368A (en) * 1998-06-13 2000-12-19 Applied Materials, Inc. Technique for chemical mechanical polishing silicon
JP3907414B2 (ja) * 2000-01-17 2007-04-18 株式会社荏原製作所 ポリッシング装置
JP3916375B2 (ja) * 2000-06-02 2007-05-16 株式会社荏原製作所 ポリッシング方法および装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO0189765A1 *

Also Published As

Publication number Publication date
TW496812B (en) 2002-08-01
EP1294534B1 (de) 2006-01-18
KR100827871B1 (ko) 2008-05-07
JP2014209643A (ja) 2014-11-06
JP2014208401A (ja) 2014-11-06
JP5542293B2 (ja) 2014-07-09
ATE315980T1 (de) 2006-02-15
DE60116757D1 (de) 2006-04-06
DE60132385D1 (de) 2008-02-21
WO2001089765A1 (en) 2001-11-29
DE60132385T2 (de) 2008-05-15
JP2003534649A (ja) 2003-11-18
KR20030001529A (ko) 2003-01-06
JP2013058762A (ja) 2013-03-28
JP6041833B2 (ja) 2016-12-14
DE60116757T4 (de) 2007-01-18
JP5980843B2 (ja) 2016-08-31
EP1294534B2 (de) 2006-01-25
DE60116757T2 (de) 2006-07-27
JP5778110B2 (ja) 2015-09-16

Similar Documents

Publication Publication Date Title
EP1294534B2 (de) Verfahren und vorrichtung zur "in-situ" überwachung der dicke während des chemisch-mechanischen planiervorganges
US6602724B2 (en) Chemical mechanical polishing of a metal layer with polishing rate monitoring
US7008297B2 (en) Combined eddy current sensing and optical monitoring for chemical mechanical polishing
US6924641B1 (en) Method and apparatus for monitoring a metal layer during chemical mechanical polishing
US7682221B2 (en) Integrated endpoint detection system with optical and eddy current monitoring
KR20130033346A (ko) 고감도 실시간 프로파일 제어 와전류 모니터링 시스템
WO2011094590A2 (en) High sensitivity real time profile control eddy current monitoring system
EP1618991B1 (de) Polierkissen

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20021219

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR

RBV Designated contracting states (corrected)

Designated state(s): AT BE CH CY DE FR GB IT LI NL

RIN1 Information on inventor provided before grant (corrected)

Inventor name: REDEKER, FRITZ, C.

Inventor name: HANAWA, HIROJI

Inventor name: BIRANG, MANOOCHER

Inventor name: BAJAJ, RAJEEV

Inventor name: JOHANSSON, NILS

Inventor name: SWEDEK, BOGUSLAW, A.

17Q First examination report despatched

Effective date: 20040623

GRAP Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOSNIGR1

GRAS Grant fee paid

Free format text: ORIGINAL CODE: EPIDOSNIGR3

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

PUAH Patent maintained in amended form

Free format text: ORIGINAL CODE: 0009272

PUAD Information related to the publication of a b2 document modified or deleted

Free format text: ORIGINAL CODE: 0009399EPPU

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): AT BE CH CY DE FR GB IT LI NL

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: IT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT;WARNING: LAPSES OF ITALIAN PATENTS WITH EFFECTIVE DATE BEFORE 2007 MAY HAVE OCCURRED AT ANY TIME BEFORE 2007. THE CORRECT EFFECTIVE DATE MAY BE DIFFERENT FROM THE ONE RECORDED.

Effective date: 20060118

Ref country code: BE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20060118

Ref country code: AT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20060118

Ref country code: NL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20060118

REG Reference to a national code

Ref country code: GB

Ref legal event code: FG4D

27A Patent maintained in amended form

Effective date: 20060125

AK Designated contracting states

Kind code of ref document: B2

Designated state(s): AT BE CH CY DE FR GB IT LI NL

DB2 B2 document published (deleted)

Free format text: NO PUBLICATION OF B2 DOCUMENT

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: GB

Payment date: 20060313

Year of fee payment: 6

REF Corresponds to:

Ref document number: 60116757

Country of ref document: DE

Date of ref document: 20060406

Kind code of ref document: P

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: FR

Payment date: 20060428

Year of fee payment: 6

NLV1 Nl: lapsed or annulled due to failure to fulfill the requirements of art. 29p and 29m of the patents act
REG Reference to a national code

Ref country code: GB

Ref legal event code: 711B

ET Fr: translation filed
PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

26N No opposition filed

Effective date: 20061019

GBPC Gb: european patent ceased through non-payment of renewal fee

Effective date: 20070518

REG Reference to a national code

Ref country code: FR

Ref legal event code: ST

Effective date: 20080131

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GB

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20070518

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: FR

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20070531

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: CH

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20060531

Ref country code: LI

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20060531

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: CY

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20060118

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: DE

Payment date: 20110531

Year of fee payment: 11

REG Reference to a national code

Ref country code: DE

Ref legal event code: R119

Ref document number: 60116757

Country of ref document: DE

Effective date: 20121201

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: DE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20121201