EP1312984A3 - Lithographischer Projektionsapparat und Verfahren zur Herstellung einer Vorrichtung - Google Patents

Lithographischer Projektionsapparat und Verfahren zur Herstellung einer Vorrichtung Download PDF

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Publication number
EP1312984A3
EP1312984A3 EP02257914A EP02257914A EP1312984A3 EP 1312984 A3 EP1312984 A3 EP 1312984A3 EP 02257914 A EP02257914 A EP 02257914A EP 02257914 A EP02257914 A EP 02257914A EP 1312984 A3 EP1312984 A3 EP 1312984A3
Authority
EP
European Patent Office
Prior art keywords
space
molecular oxygen
lithographic projection
projection apparatus
device manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP02257914A
Other languages
English (en)
French (fr)
Other versions
EP1312984B1 (de
EP1312984A2 (de
Inventor
Willem Van Schaik
Bastiaan Matthias Mertens
Hans Meiling
Norbertus Benedictus Koster
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML Netherlands BV
Original Assignee
ASML Netherlands BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASML Netherlands BV filed Critical ASML Netherlands BV
Publication of EP1312984A2 publication Critical patent/EP1312984A2/de
Publication of EP1312984A3 publication Critical patent/EP1312984A3/de
Application granted granted Critical
Publication of EP1312984B1 publication Critical patent/EP1312984B1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70933—Purge, e.g. exchanging fluid or gas to remove pollutants

Landscapes

  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Environmental & Geological Engineering (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Toxicology (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Lenses (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
EP02257914A 2001-11-19 2002-11-15 Verfahren zur Herstellung einer Vorrichtung Expired - Lifetime EP1312984B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/988,391 US6828569B2 (en) 2001-11-19 2001-11-19 Lithographic projection apparatus, device manufacturing method and device manufactured thereby
US988391 2001-11-19

Publications (3)

Publication Number Publication Date
EP1312984A2 EP1312984A2 (de) 2003-05-21
EP1312984A3 true EP1312984A3 (de) 2005-05-25
EP1312984B1 EP1312984B1 (de) 2007-03-14

Family

ID=25534075

Family Applications (1)

Application Number Title Priority Date Filing Date
EP02257914A Expired - Lifetime EP1312984B1 (de) 2001-11-19 2002-11-15 Verfahren zur Herstellung einer Vorrichtung

Country Status (8)

Country Link
US (2) US6828569B2 (de)
EP (1) EP1312984B1 (de)
JP (1) JP4194831B2 (de)
KR (1) KR100767829B1 (de)
CN (1) CN1322545C (de)
DE (1) DE60218802T2 (de)
SG (1) SG120897A1 (de)
TW (1) TWI266960B (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7476491B2 (en) 2004-09-15 2009-01-13 Asml Netherlands B.V. Lithographic apparatus, gas supply system, method for purging, and device manufacturing method and device manufactured thereby

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10209493B4 (de) * 2002-03-07 2007-03-22 Carl Zeiss Smt Ag Verfahren zur Vermeidung von Kontamination auf optischen Elementen, Vorrichtung zur Regelung von Kontamination auf optischen Elementen und EUV-Lithographievorrichtung
US20050229947A1 (en) * 2002-06-14 2005-10-20 Mykrolis Corporation Methods of inserting or removing a species from a substrate
ITTO20020787A1 (it) * 2002-09-10 2004-03-11 St Microelectronics Srl Macchina di impiantazione ionica perfezionata, relativo
US7189291B2 (en) * 2003-06-02 2007-03-13 Entegris, Inc. Method for the removal of airborne molecular contaminants using oxygen gas mixtures
US7384149B2 (en) * 2003-07-21 2008-06-10 Asml Netherlands B.V. Lithographic projection apparatus, gas purging method and device manufacturing method and purge gas supply system
US20060285091A1 (en) * 2003-07-21 2006-12-21 Parekh Bipin S Lithographic projection apparatus, gas purging method, device manufacturing method and purge gas supply system related application
US20060119811A1 (en) * 2004-12-07 2006-06-08 Asml Netherlands B.V. Radiation exposure apparatus comprising a gas flushing system
CN101095084A (zh) * 2004-12-14 2007-12-26 拉多韦有限公司 形成用于光刻转印的准直uv光线的方法和设备
DE102005031792A1 (de) * 2005-07-07 2007-01-11 Carl Zeiss Smt Ag Verfahren zur Entfernung von Kontamination von optischen Elementen, insbesondere von Oberflächen optischer Elemente sowie ein optisches System oder Teilsystem hierfür
JP2009503899A (ja) * 2005-08-03 2009-01-29 インテグリス・インコーポレーテッド 移送容器
US7986395B2 (en) * 2005-10-24 2011-07-26 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography apparatus and methods
KR100739424B1 (ko) * 2005-10-28 2007-07-13 삼성전기주식회사 비활성 기체 주입을 이용한 노광 장치 및 인쇄회로 기판의 제조 방법
US7405417B2 (en) * 2005-12-20 2008-07-29 Asml Netherlands B.V. Lithographic apparatus having a monitoring device for detecting contamination
US20070284541A1 (en) * 2006-06-08 2007-12-13 Vane Ronald A Oxidative cleaning method and apparatus for electron microscopes using UV excitation in a oxygen radical source
US8507879B2 (en) * 2006-06-08 2013-08-13 Xei Scientific, Inc. Oxidative cleaning method and apparatus for electron microscopes using UV excitation in an oxygen radical source
US8564759B2 (en) * 2006-06-29 2013-10-22 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for immersion lithography
JP4802937B2 (ja) * 2006-08-24 2011-10-26 大日本印刷株式会社 フォトマスクの洗浄方法
KR100817066B1 (ko) * 2006-10-11 2008-03-27 삼성전자주식회사 기판 노광 및 광학요소 세정을 인시츄로 수행할 수 있는극자외선 노광장치 및 그에 구비된 광학요소의 세정방법
JP2008277585A (ja) * 2007-04-27 2008-11-13 Canon Inc 露光装置の洗浄装置及び露光装置
NL1036769A1 (nl) * 2008-04-23 2009-10-26 Asml Netherlands Bv Lithographic apparatus, device manufacturing method, cleaning system and method for cleaning a patterning device.
US8394203B2 (en) * 2008-10-02 2013-03-12 Molecular Imprints, Inc. In-situ cleaning of an imprint lithography tool
DE102009045008A1 (de) * 2008-10-15 2010-04-29 Carl Zeiss Smt Ag EUV-Lithographievorrichtung und Verfahren zum Bearbeiten einer Maske
US8633459B2 (en) * 2011-03-02 2014-01-21 Cymer, Llc Systems and methods for optics cleaning in an EUV light source
JP2013080810A (ja) * 2011-10-04 2013-05-02 Lasertec Corp Ｅｕｖマスク検査装置及びｅｕｖマスク検査方法
JP6034598B2 (ja) * 2012-05-31 2016-11-30 ギガフォトン株式会社 Ｅｕｖ光生成装置の洗浄方法
KR102427325B1 (ko) 2015-06-03 2022-08-01 삼성전자주식회사 노광 장치 및 노광 장치 세정 방법
DE102016216266A1 (de) 2016-08-30 2017-08-31 Carl Zeiss Smt Gmbh Vorrichtung und Verfahren zur Reinigung eines Objekts
DE102017114216A1 (de) * 2017-06-27 2018-04-19 Asml Netherlands B.V. Anordnung zur Kontaminationsreduzierung in einem optischen System, insbesondere in einer mikrolithographischen Projektionsbelichtungsanlage
CN112204472B (zh) * 2018-05-28 2024-10-11 Asml荷兰有限公司 光刻设备
CN114072732A (zh) * 2019-07-01 2022-02-18 Asml荷兰有限公司 用于对图案化装置和其他衬底进行表面处理的表面处理设备和方法
CN113031391B (zh) * 2021-03-05 2023-06-30 中国科学院光电技术研究所 一种简易紫外纳米压印光刻装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010026354A1 (en) * 2000-03-27 2001-10-04 Nikon Corporation Optical instrument, gas replacement method and cleaning method of optical instrument, exposure apparatus, exposure method and manufacturing method for devices
US20010030740A1 (en) * 1997-04-23 2001-10-18 Nikon Corporation Optical exposure apparatus and photo-cleaning method
JP2001293442A (ja) * 2000-04-17 2001-10-23 Canon Inc 光学素子の洗浄方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5099557A (en) * 1988-07-08 1992-03-31 Engelsberg Audrey C Removal of surface contaminants by irradiation from a high-energy source
US5559584A (en) * 1993-03-08 1996-09-24 Nikon Corporation Exposure apparatus
BE1007907A3 (nl) 1993-12-24 1995-11-14 Asm Lithography Bv Lenzenstelsel met in gasgevulde houder aangebrachte lenselementen en fotolithografisch apparaat voorzien van een dergelijk stelsel.
EP0997761A4 (de) * 1997-06-10 2000-09-13 Nippon Kogaku Kk Optische vorrichtung,verfahren zu deren reinigung,projektionsausrichter und verfahren zur herstellung derselben
JPH1116802A (ja) * 1997-06-19 1999-01-22 Toshiba Corp 露光方法及び露光装置
US6014398A (en) * 1997-10-10 2000-01-11 Cymer, Inc. Narrow band excimer laser with gas additive
WO1999005708A1 (en) 1997-07-22 1999-02-04 Nikon Corporation Projection exposure method, projection aligner, and methods of manufacturing and optically cleaning the aligner
JPH11224839A (ja) * 1998-02-04 1999-08-17 Canon Inc 露光装置とデバイス製造方法、ならびに該露光装置の光学素子クリーニング方法
AU1801700A (en) * 1998-12-28 2000-07-24 Nikon Corporation Method for cleaning optical device, exposure apparatus and exposure method, method for manufacturing device, and device
US6394109B1 (en) * 1999-04-13 2002-05-28 Applied Materials, Inc. Method and apparatus for removing carbon contamination in a sub-atmospheric charged particle beam lithography system
US6387602B1 (en) * 2000-02-15 2002-05-14 Silicon Valley Group, Inc. Apparatus and method of cleaning reticles for use in a lithography tool
US6724460B2 (en) * 2001-11-19 2004-04-20 Asml Netherlands B.V. Lithographic projection apparatus, device manufacturing method, device manufactured thereby, cleaning unit and method of cleaning contaminated objects
KR100772125B1 (ko) * 2002-06-26 2007-10-31 이유브이 리미티드 라이어빌러티 코포레이션 방사 주입된 표면 오염을 감소시키는 공정

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010030740A1 (en) * 1997-04-23 2001-10-18 Nikon Corporation Optical exposure apparatus and photo-cleaning method
US20010026354A1 (en) * 2000-03-27 2001-10-04 Nikon Corporation Optical instrument, gas replacement method and cleaning method of optical instrument, exposure apparatus, exposure method and manufacturing method for devices
JP2001293442A (ja) * 2000-04-17 2001-10-23 Canon Inc 光学素子の洗浄方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
BLOOMSTEIN T M ET AL: "Laser cleaning of optical elements in 157-nm lithography", PROCEEDINGS OF THE SPIE - THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING SPIE-INT. SOC. OPT. ENG USA, vol. 4000, July 2000 (2000-07-01), pages 1537 - 1545, XP002321000, ISSN: 0277-786X *
PATENT ABSTRACTS OF JAPAN vol. 2002, no. 02 2 April 2002 (2002-04-02) *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7476491B2 (en) 2004-09-15 2009-01-13 Asml Netherlands B.V. Lithographic apparatus, gas supply system, method for purging, and device manufacturing method and device manufactured thereby

Also Published As

Publication number Publication date
TW200407680A (en) 2004-05-16
US6828569B2 (en) 2004-12-07
JP4194831B2 (ja) 2008-12-10
CN1322545C (zh) 2007-06-20
CN1474234A (zh) 2004-02-11
KR20030075136A (ko) 2003-09-22
EP1312984B1 (de) 2007-03-14
DE60218802D1 (de) 2007-04-26
US20050112508A1 (en) 2005-05-26
JP2003234287A (ja) 2003-08-22
EP1312984A2 (de) 2003-05-21
US20030096193A1 (en) 2003-05-22
DE60218802T2 (de) 2007-12-06
US7115886B2 (en) 2006-10-03
KR100767829B1 (ko) 2007-10-17
SG120897A1 (en) 2006-04-26
TWI266960B (en) 2006-11-21

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