EP1386342A2 - Systeme de deviation pour un appareil a faisceau de particules - Google Patents

Systeme de deviation pour un appareil a faisceau de particules

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Publication number
EP1386342A2
EP1386342A2 EP02724193A EP02724193A EP1386342A2 EP 1386342 A2 EP1386342 A2 EP 1386342A2 EP 02724193 A EP02724193 A EP 02724193A EP 02724193 A EP02724193 A EP 02724193A EP 1386342 A2 EP1386342 A2 EP 1386342A2
Authority
EP
European Patent Office
Prior art keywords
particle beam
charged particles
corrector
magnetic
deflector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP02724193A
Other languages
German (de)
English (en)
Inventor
Matthias Brunner
Ralf Schmid
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AKT Electron Beam Tech GmbH
Original Assignee
AKT Electron Beam Tech GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AKT Electron Beam Tech GmbH filed Critical AKT Electron Beam Tech GmbH
Publication of EP1386342A2 publication Critical patent/EP1386342A2/fr
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/153—Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path

Definitions

  • the invention relates to a particle beam apparatus and a device for the energy-corrected deflection of a particle beam from charged particles and a method for the energy-corrected deflection of a particle beam.
  • Devices for deflecting particle beams from charged particles are used for particle beam devices such as e.g. Electron microscopes, devices of electron or ion beam lithography and used for display devices. It is usually a question of deflecting a particle beam of charged particles from an incident direction into variable directions in order to be able to move to different positions on a target surface.
  • the deflection of particle beams from an direction of incidence to a direction of exit is generally carried out by using electrical or magnetic fields which exert lateral forces on the particle beam.
  • the electric or magnetic fields are generated by deflectors, the electric or magnetic multipoles, e.g. Dipoles or quadrupoles.
  • the deflection angle between the direction of incidence and the direction of exit a ⁇ , which a homogeneous magnetic field of strength B perpendicular to the particle beam causes on the particle beam, is given by
  • SQRT (W) is the square root of the kinetic particle energy W of the charged particles and k m is a constant which depends on the particle mass, particle charge, the magnetic field strength and the angle between the magnetic field and the particle beam direction.
  • Eq. (1) applies in particular in the event that the deflection angle is small compared to the angle between the particle beam and the magnetic field.
  • k e is a constant that depends on the particle mass, particle charge, the electric field strength and the angle between the electric field and the particle beam direction.
  • Eq. (2) applies in particular to the case where the deflection angle is small compared to the angle between the particle beam and the electric field.
  • the dependence of the deflection angle on the particle energy W leads to the fact that only particles with a predefined energy value change direction by the predefined deflection angle. Particles with higher energy than the given energy value are deflected less and particles with lower energy are deflected more. Since the charged particles of a particle beam have a certain scatter in energy in practice, the dependence of the deflection angle on the energy of the charged particles leads to the fact that particle beams from charged particles experience an energy-dependent expansion when deflected. An energy-dependent expansion of a particle beam, which is also called _ _mci _.___.
  • a device for how a particle beam of charged particles can be deflected in an energy-corrected manner by a predetermined deflection angle is disclosed in the patent application US 4,362,945.
  • An electric field and a magnetic field are superimposed therein perpendicularly, the forces of the electric field on the charged particles of the particle beam counteracting the forces of the magnetic field on the charged particles.
  • the strength of the magnetic field is also so great that the predetermined magnetic deflection angle ⁇ m is twice as large as the predetermined electrical deflection angle ⁇ e , as a result of which the energy-dependent deviations from the predetermined deflection angle compensate one another.
  • the deflection angle ⁇ the following therefore applies to the deflection angle ⁇ :
  • the particle beam deflection points of a deflector result from the cross point that the beam axis of the incident particle beam forms with the axis of the particle beam emerging from the respective field.
  • deflectors require a large opening so that deflected particle beams can be passed through the deflector unhindered even with a large deflection angle.
  • a large opening means large baffle spacings and large coil spacings.
  • the electrical potential at the deflection plates and the currents at the coils must be scaled up accordingly. This leads to a further increase in the £ _., ⁇ . Voltages and / or coil currents of the deflector, which thereby makes it even larger and further limits the possible uses.
  • the present invention is therefore based on the object of a particle beam apparatus, a device and a method for energy-corrected deflection To provide particle beam, which do not have the disadvantages described above.
  • the .5 device and the inventive method allow an energy-corrected deflection of a particle beam by a predetermined deflection angle without the disadvantages mentioned above.
  • the corrector exerts forces on the incident particle beam which correspond to the directions of the
  • the corrector thus preferably compensates for an energy-dependent expansion of the particle beam, which the deflector would add to the particle beam without a corrector.
  • the corrector which provides the first electrical and the first magnetic field, can have a small opening since the first electrical and the first magnetic field of the corrector are set according to the invention such that
  • the charged particles with de _ y ⁇ _ b c enes energy value maintain their direction. Only the charged particles with ⁇ ron of the energy deviating from the given energy value are changed in direction. The size of the opening of the corrector is no longer determined by the maximum deflection angle of the
  • 5 particle beam but determined by the degree of scattering of the particle energies around the specified energy value. In many particle beam apparatuses, this is small enough to to make the opening of the corrector sufficiently small.
  • the opening of the corrector is blenkplattenabstand or generally by the A given by the coil pitch of the baffle plates and coils of the corrector. 5
  • the invention makes it possible to distribute the functions of the deflection and the energy correction to two spatially separate units, namely the corrector and the deflector. This allows both components to be independent
  • the corrector which must provide high electrical or magnetic field strengths, can have a small aperture and the deflector, which must provide small electrical or magnetic field strengths
  • the deflector 15 must be equipped with a large opening.
  • the deflector in particular can be manufactured with a small volume. This means that the particle beam apparatus also has a small working distance
  • the ⁇ f _ ⁇ .v__. Objective lens (7) which is given, for example, by the bore diameter, can be significantly reduced, which significantly reduces the effort for the lens optics.
  • the particle beam (3) is preferably adjusted so that its distance from the optical axis (20) as it passes through the objective lens (7) is less than 2 mm and preferably less than 0.5 mm.
  • the corrector changes the direction of the charged particles as a function of their energy. These changes in direction are such that the deflector focuses the charged particles with the second electric field or the second magnetic field. In this respect, the corrector corrects the 10 energy-dependent expansion of the particle beam that the deflector would produce without a corrector.
  • Particle beam devices with a particle beam source, objective lens, corrector and deflector are used as
  • Target surfaces can e.g. be the samples or surfaces of samples that match the
  • Target surfaces can also be samples that are to be structured with the focused particle beam, e.g. Wafers for micromechanics or microelectronics or biological samples; Finally, target surfaces can be samples that are to be structured with the focused particle beam, e.g. Wafers for micromechanics or microelectronics or biological samples; Finally, target surfaces can be samples that are to be structured with the focused particle beam, e.g. Wafers for micromechanics or microelectronics or biological samples; Finally, target surfaces can
  • 15 can also be surfaces which are excited by the bombardment with the particle beam for any other reactions such as lighting or switching.
  • the charged particles are preferably free electrons or ions.
  • the particle beam is preferably limited to a maximum beam diameter by aperture diaphragms, electrical or magnetic lenses or other devices, the 5 particle beam direction and the particle beam cross section characterizing a beam axis.
  • the beam axis is preferred of the particle beam generated at the particle beam source largely identical to the beam axis of the incident particle beam to be deflected or to the optical axis of the objective lens.
  • the charged particles of the particle beam are preferably accelerated to a predetermined energy value, so that the particle beam, when it arrives on the objective lens, on the corrector or on the deflector, consists of charged particles with energies scattered by a predetermined energy value L0.
  • the objective lens of the particle beam apparatus is preferably a magnetic, electrical or electromagnetic lens, which has a focusing effect on the particle beam
  • the degree of focusing of the particle beam is crucial for a good spatial resolution with which a sample is observed, structured or otherwise treated.
  • the charged particle beam traverses the objective lens along the optical axis.
  • Such a particle beam guidance is possible if the deflector is arranged behind the objective lens in the particle beam.
  • _; _. For the greatest possible spatial resolution of a 0 particle beam apparatus, _; _. required that the objective lens is arranged very close, ie a few millimeters above the target surface. In this case one speaks of a short working distance. The short working distance can cause considerable problems if additional optical components such as a deflector have to be attached between the 5 objective lens and the target surface. To avoid placing the deflector in front of the objective lens there is great interest in making the spatial dimensions of the deflector as small as possible.
  • the device according to the invention solves this problem because, in a first preferred embodiment, the corrector in front of the objective lens and the deflector behind the objective lens
  • the corrector according to the invention leaves the direction of the charged particles with the specified energy value, it can be ensured that the charged particles with the specified energy value cross the objective lens along their optical axis.
  • the working distance is large, e.g. larger than about 30 mm,
  • the first deflector is used for the deflection large opening required, only comparatively small electrical or magnetic fields must deliver.
  • the corrector changes the direction of the charged particles depending on their energy, so that the particle beam is expanded. Only the direction of the charged particles with the specified energy value is maintained when crossing the corrector. This is achieved when the ratio of the field strengths from the first magnetic field, B, to the first electric field, E, which is perpendicular thereto, essentially by the relationship:
  • the opening of the corrector can be chosen so small that it has to be adapted to the expansion of the particle beam, but not to an additional deflection of the particle beam.
  • the directions of the charged particles with the predetermined energy value are preferred by the correction. _..._, i maintain that the changes in the particle trajectories are less than 3 degrees and preferably less than 1 degree.
  • the changes in direction carried out on the charged particles are such that the subsequent deflector focuses the changed-direction and the direction-left charged particles.
  • the deflector is connected directly behind the corrector, since the corrector has left the charged particles with a predetermined energy value on the beam axis.
  • Control of the particle beam between the corrector and deflector are arranged. This can make an energy correcting
  • the objective lens is arranged between the corrector and the deflector, the particle beam passing through the objective lens along the optical axis. In this case, the deflection in the particle beam direction is carried out behind the objective lens.
  • the object preferably points. " " " ' __ a focal length that focuses the particle beam on the same point as the deflector. This enables a focal point with the smallest possible extent to be created. The smaller the focus point, the greater the resolution with which the
  • the device for energy-corrected deflection and preferably also the particle beam apparatus have a control system which controls the deflector and the corrector as a function of the predetermined deflection angle.
  • the 5 control causes, on the one hand, that the charged particles with the specified energy value maintain their direction when passing through the corrector regardless of the specified deflection angle and the deflector focuses the charged particles on a target surface LO regardless of the specified deflection angle.
  • the target area can be, for example, the surface of a sample to be observed, a sample to be structured and in particular a sample to be tested.
  • the focus area is the area that the cross section of the deflected particle beam forms with the target area.
  • the focus area is preferably independent of the predefined one
  • the focus area is preferably independent of the predefined one
  • Generating particle beams are also known as Wien filters.
  • the Vienna filter has mainly been used Energy analysis and for the separation of charged particles of different energy without the additional condition to compensate for the energy-dependent deflection errors of a subsequent deflector. 5
  • the corrector preferably has a first electrical multipole for generating a first electrical field and a first magnetic multipole for generating a first magnetic field.
  • the first electric LO field and the first magnetic field preferably exert lateral forces on the charged particles, which are opposed to one another.
  • the oppositely directed forces preferably compensate on average, so that the direction of charged particles is left with a predetermined energy.
  • the expansion of the particle beam by the corrector can be changed by changing the B and E field strength can be freely set with constant B / E ratio.
  • the B and E field strengths are set according to the invention at a constant B / E ratio so that the deflector focuses the charged particles of the expanded particle beam. With a constant B / E ratio, the B and E field strengths are preferably further adjusted such that the charged particles are focused on the target surface.
  • the charged particles are preferably further focused on the target surface with a focal area which, independently of the given deflection angle, is smaller than ten times the cross-sectional area of the particle beam incident on the corrector and preferably smaller than the simple cross-sectional area of the particle beam incident on the corrector.
  • the superposition of the first electric field with the first magnetic field causes the Particle beam deflection points of the first electric field and the first magnetic field are close together.
  • the particle beam deflection point of the first electrical field results from the point of intersection which the beam axis of the incident particle beam forms with the axis of the particle beam emerging from the first electrical field when the first magnetic field is switched off.
  • the particle beam deflection point of the first magnetic field results from the point of intersection formed by the beam axis of the incident particle beam with the beam axis of the particle beam emerging from the first magnetic field when the first electrical field is switched off.
  • the first electric field and the first magnetic field are preferably superimposed on one another in such a way that the particle beam deflection points of the first electric field and of the first magnetic field are closer together than 10 mm, closer than 5 mm and preferably closer than 1 mm. This ensures that the corrector not only leaves the direction of the charged particles with the specified energy value but also prevents a parallel displacement of these charged particles.
  • the deflector has a second electrical multipole for generating the second electrical field.
  • the deflector is an electrical deflector.
  • the deflector has a second magnetic
  • the deflector is __ lt -. a __etic deflector.
  • the deflector generates both a second electrical and a second magnetic field.
  • the deflector preferably has either a second electrical one
  • the deflector is therefore preferably either an electrical deflector or a magnetic deflector.
  • the first and / or second electrical multipole is an electrical dipole which has two opposite deflection plates which generate the first and / or second electrical field.
  • the predetermined deflection of the particle beam can thus take place in the plane given by the particle beam direction and the plane given by the direction of the first electric field.
  • the deflected particle beam can only drive the points of a line LO on the target surface.
  • the distance between the deflecting plates preferably determines the size of the opening of the deflector and preferably also that of the corrector.
  • the first is N-(2-aminoethyl)-2-aminoethyl-N-(2-aminoethyl)-2-aminoethyl-N-(2-aminoethyl)-2-aminoethyl-N-(2-aminoethyl)-2-aminoethyl-N-(2-aminoethyl)-2-aminoethyl-N-(2-aminoethyl)-2-aminoethyl-N-(2-aminoethyl)-2-aminoethyl-N-(2-aminoethyl)-2-aminoethyl-N-(2-aminoethyl)-2-aminoethyl-N-(2-aminoethyl)-2-aminoethyl-N-(2-aminoethyl)-2-aminoethyl-N-(2-aminoeth
  • Quadrupole or an electrical octupole which have deflection plates, which are preferably arranged symmetrically to the beam axis. In this case, by applying suitable voltages to the opposite one
  • Deflection plates generate first and / or second electrical fields which can deflect the particle beam in any plane lying on the beam axis. This allows the distracted
  • the distance preferably determines the
  • the first and / or second magnetic multipole is a magnetic dipole
  • the field strength of the first and / or second magnetic field is preferably controlled by a coil current at the magnetic dipole. This allows the predetermined deflection of the particle beam in
  • the direction of the magnetic field being given by the orientation of the magnetic dipole.
  • the first and / or the second magnetic multipole is a magnetic quadrupole or a magnetic octupole, which are preferably arranged symmetrically to the beam axis.
  • the field strength of the first and / or second magnetic field is preferably controlled by a plurality of coil currents on the magnetic quadrupole or magnetic octupole.
  • first magnetic fields can be generated, which can deflect the particle beam in every plane lying on the beam axis.
  • the particle beam can drive the points of a surface on the target surface when the particle beam is deflected.
  • the deflector has a second electrical multipole
  • the first and second electrical multipoles are aligned with one another in such a way that they can generate first and second electrical fields that are parallel or antiparallel to one another on the particle beam. An energy-correcting deflection can thus be carried out in an advantageous manner.
  • the deflector has a second magnetic multipole
  • the first and second magnetic multipoles are aligned with one another in such a way that they generate first and second magnetic fields parallel or antiparallel to one another on the particle beam.
  • the second magnetic field in the particle beam region is preferably perpendicular to the second electrical field.
  • the coils of the magnetic multipoles are preferably saddle coils or Toroidal coils. Furthermore, the first and / or second magnetic field are preferably bundled by magnetic pole shoes.
  • the controller automatically controls the first deflector and corrector when a predetermined deflection angle is entered, so that for each predetermined deflection angle the first electrical field required for the energy-corrected deflection, the first magnetic LO field and the second electrical or the second magnetic Field are generated automatically.
  • the control is preferably carried out synchronously so that the energy-corrected deflection persists at all times.
  • the controller preferably has a predetermined algorithm which calculates and executes the parameters required for controlling the corrector and the first deflector for each predetermined deflection angle. With this algorithm, preference is given to every predetermined deflection angle of the
  • 10 particle beam calculates the voltages required for the electrodes of the electrical multipoles and the coil currents for the magnetic multipoles.
  • the charged particles of the particle beam are preferred.
  • the electron source is a thermal one
  • Electrons in a filament emit them.
  • Electron sources can, for example, tungsten filament sources, LaB 6 -
  • Thermal electron sources have the advantage that they are easy to manufacture and can be operated even under a comparatively weak vacuum. Their disadvantage is that they have comparatively high particle beams
  • Particle beam apparatus with the objective lens in front of the corrector.
  • FIGS. 2a-b show a first embodiment of an L5 device according to the invention for energy-corrected deflection with two different predetermined deflection angles.
  • 3a-b show a second embodiment of a device according to the invention for energy-corrected deflection with two different predetermined deflection angles.
  • Fig. 4 shows an embodiment of a
  • Fig.la schematically shows a first embodiment of a particle beam apparatus 50 according to the invention.
  • the deflector 18 is in the particle beam direction
  • correction optics can be realized. This allows the deflector 18 to be made spatially small, so that it too can fit in with a small working distance between objective lens 7 and target surface 22.
  • Attaching the deflector 18 behind the objective lens 7 is therefore of importance, since as a result the particle beam 3 can always pass through the optical axis of the objective lens 7, which is preferably arranged axially symmetrically to the beam axis 20, so that chromatic and spherical errors of the objective lens 7 do not occur or hardly occur.
  • the LO deflection by the deflector 18 only takes place after the objective lens 7 in FIG.
  • the particle beam apparatus 50 further has a particle beam source 40, which emits charged particles into the vacuum 44.
  • the particle beam source 40 is a thermal electron source, for example a LaB 6 source, a tungsten filament source or one
  • thermal field emission source that emits the electrons by thermal excitation.
  • typical temperatures for the emission operation are in the range between 1000 C to approximately 4000 C and preferably between 1600 C and 3000 C. After the emission, the
  • the acceleration and preferably by 0 aperture diaphragms which are shown in FIG. _.
  • the particle beam 3 consisting of electrons with an energy 5 scattered by the predetermined energy value.
  • the scatter of the energy depends, for example, on the voltage stability of the voltage at the anode 41 and on the type of particle beam source 40.
  • thermal Particle beam sources are known to produce particle beams with greater energy spread compared to cold field emission sources.
  • the energy spread of the particle beam by a predetermined 5 energy value of 20 keV is less than about 5 eV and preferably less than 2 V. This energy spread can lead to an energy-dependent expansion of the particle beam in the case of a non-energy-corrected deflection, which increases the spatial resolving power of a Particle beam apparatus -0 impaired.
  • the invention is largely independent of the energy of the charged particles of the particle beam. It is preferably applied to particle beam apparatus with .5 particle beams 3 in the energy range between 500 eV and 15 keV and even more preferably in the two energy ranges between 700 eV and 2000 eV or 6 keV and 10 keV.
  • the cross section of the particle beam 3 incident on the corrector 5 is preferably smaller than the opening of the
  • Objective lens larger than 200 ⁇ m and preferably larger than 400
  • the corrector 5 carries out the changes of direction 15 according to the invention on the charged particles as a function of their energy, the corrector 5 being set so that the charged particles with the predetermined energy keep their direction within a deviation of 3 degrees and preferably within 1 degree ,
  • the Particle beam 3 is expanded depending on the energy due to its energy spread.
  • La therefore shows the particle beam 9 with the charged particles with a predetermined energy value, a particle beam 9a with charged particles with an energy less than the predetermined energy and the particle beam 9b with charged particles with an energy greater than the predetermined energy value.
  • the corrector 5 preferably does not change the energy of the charged particles of the particle beam 3 or does so by less than 1%.
  • the energy-dependent expansion of the particle beam 3 in this embodiment is determined by the electrical field of an electrical multipole, e.g. an electrical dipole, quadrupole or octupole, and by the magnetic field of one
  • .5 magnetic multipoles e.g. a magnetic dipole, quadrupole or octupole (both not shown in Fig. la). Both fields overlap, so that they preferentially exert the same opposite forces on the charged particles with predetermined energy at each point
  • objective lens 7 serves to focus the particle beam 3 onto the target surface 22, which e.g. the
  • the objective lens 7 is ordinary
  • the objective lens 7 is arranged less than 60 cm, in another preferred embodiment less than 10 mm millimeters in front of the target surface 22.
  • the charged particles with predetermined energy 9 preferably pass through the objective lens along the optical axis 7.
  • the beam of charged particles with a predetermined energy 9 is guided through the objective lens 7 without refraction, as a result of which spherical and chromatic aberration effects of the objective lens 7 are eliminated.
  • L5 9b has passed through the objective lens, it strikes the deflector 18.
  • the deflector 18 deflects the beam of charged particles with a predetermined energy value by the predetermined deflection angle 12. Because of the energy-dependent deflection force inherent in the deflector 18, it focuses
  • the first electric field and the first magnetic field of the corrector are set so that the deflector 18 at one
  • predetermined deflection angle 12 generates a minimum focus area 24. Due to the additional focusing by the objective lens 7, the focus area 24 can be smaller than the cross-section of the particle beam 3 when entering the corrector 5, despite the deflection.
  • the objective lens is preferred
  • the deflector 18 has an electrical multipole electrode (not shown in FIG.
  • Particle beam 3 performs.
  • the deflection by the deflector 18 can also be carried out by the second magnetic field 5.
  • the present embodiment preferably has a controller 30 which, based on the stipulation of a predetermined deflection angle 12 via the control input 26, the electrical and electrical signals required for optimal focusing
  • L5 magnetic fields from the corrector 5 and the first deflector 18 are calculated and set via a control.
  • the controller 30 can calculate the electrical and magnetic fields of the corrector 5 and the first deflector 18 such that the focus area 24 on the target area 22 is minimized
  • the controller 30 preferably also controls the objective lens 7, so that the objective lens 7 also focuses the particle beam 3 onto the target surface 20.
  • the focus area 24 can also with a large predetermined deflection 12
  • the focus area 24 and thus the spatial resolution of the particle beam apparatus 50 can thus be significantly smaller than in conventional particle beam apparatuses in which the deflector is in front of the
  • Fig. Lb shows an embodiment of a particle beam apparatus 50 according to the invention as in Fig. La with the difference that the objective lens 7 is arranged in front of the corrector 5.
  • This embodiment has the advantage that the particle beam 35 can pass through the objective lens 7 independently of the energy of the charged particles along the optical axis 7 thereof. This further reduces spherical or chromatic aberration effects through the objective lens 7 in comparison to FIG.
  • LO space it is not always possible to place both corrector 5 and deflector 18 between a target surface and objective lens 7.
  • FIGS. 2a and 2b show an embodiment of the device 1 according to the invention, e.g. in one
  • 0 particle beam apparatus 50 in _ _.._ or lb can be installed.
  • 2a and 2b show the device 1 with a particle beam 3 incident from the direction of incidence 2, which is deflected in an energy-corrected manner by two predetermined deflection angles 12.
  • the particle beam 3 incident from the direction of incidence 2 first falls on the corrector 5 has a first electrical multipole 71 and a first magnetic multipole 74.
  • the first electrical multipole 71 generates the first electrical field 70, which exerts a lateral force on the incident particle beam 3.
  • the first magnetic multipole 74 generates a first magnetic field 73, which exerts a lateral force on the incident particle beam 3, which counteracts the lateral force of the first electrical field 70.
  • the ratio of the two field strengths is set so that the forces on the charged particles with the specified energy value compensate on average. As a result, the direction of the incident charged particles with the predetermined energy value when crossing the
  • the orientation of the first electric field 70 and the first magnetic field 73 is set such that charged particles with an energy smaller than the predetermined energy value experience a change in direction that corresponds to the predetermined deflection angle
  • a beam of such charged particles is designated by 9a in FIG. 2a.
  • a beam of charged particles with an energy higher than the predetermined energy value undergoes a change in direction that is in the same direction as that of the
  • a beam of such charged particles is designated by 9b in FIG. 2a.
  • the first electrical multipole 71 and the first magnetic multipole 74 are preferably oriented such that the first
  • the first 5 electrical multipole 71 and the first magnetic multipole 74 are quadrupoles or octupoles.
  • the plane in which the particle beam 3 is expanded can be freely set by the selection of suitable voltages at the electrodes of the electrical multipole 71 and suitable currents in the coils LO of the magnetic multipole 74. An energy-corrected deflection in any desired plane that leads along the beam axis 20 is thus possible through a suitable control of the field strengths.
  • the particle beam 3 widened by the corrector 5 then enters the deflector 18.
  • the deflector 18 has a second electrical multipole 61 which generates a second electrical field 60.
  • the second is analogous to the corrector 5
  • 0 electrical multipole 61 preferably a dipole, quadrupole or octupole, depending on whether the first electrical multipole 71 is a dipole, quadrupole or octupole.
  • the second electrical multipole 61 is preferably arranged symmetrically to the beam axis 20. In this way it can be guaranteed
  • FIG. 2a further shows a controller 30, which preferably matches the field strengths of the electrical and magnetic fields of the corrector 5 and deflector 18 to one another. This is
  • LO is particularly necessary if the predefined deflection angle 12 is changed continuously, since for each predefined deflection angle 12 changed electrical and magnetic fields must be applied in the corrector 5 and the first deflector 18. In particular, if the focus area 24
  • the field strengths of the corrector 5 and the first deflector 18 must be precisely coordinated. This coordination is preferably based on a calculation using a predetermined algorithm in the controller 30
  • Fig. 2b shows the device 1 with the difference to Fig. 2a that the predetermined deflection angle 12 is larger.
  • the larger change in the deflection angle 12 requires a stronger one
  • the particle beam is deflected by the predetermined deflection angle 12 not by an electric field but by the second magnetic field 63, which is generated by a second magnetic multipole 64.
  • the direction of the second magnetic field 63 is preferably the same as the direction of the first magnetic field 73 in order to achieve an optimal energy correction during deflection.
  • the second magnetic multipole 64 is preferably a dipole, quadrupole or LO octupole, depending on whether the first magnetic multipole 74 is a dipole, quadrupole or octupole.
  • 4a and 4b show a schematic embodiment of a corrector 5 with a magnetic quadrupole and a: 5 electrical quadrupole.
  • 4a shows a cross section through the corrector 5 in the plane perpendicular to the beam axis 20
  • FIG. 5b shows the same corrector 5 from the side along the beam axis 20.
  • Pole shoes 110 attached, which are each rotated at a 90 degree angle to one another and together form the magnetic quadrupole.
  • the four coils 108 and the four pole shoes 110 are preferably symmetrical to the beam axis
  • Beam axis 20 are generated with any direction of rotation about the beam axis 20.
  • the four baffle plates 106 are furthermore attached symmetrically to the four pole shoes 110, which together form the electrical quadrupole.
  • a first electric field perpendicular to the beam axis 20 can be generated with any direction of rotation about the beam axis 20.
  • the first electrical field can be oriented perpendicular to the beam direction 20 and perpendicular to the direction of the first magnetic field.
  • the corrector 5 can expand the particle beam 3 in each plane along 5 the beam direction, so that the particle beam 3 can be deflected in any direction with the aid of the deflector 18 in an energy-corrected manner.
  • magnetic pole pieces 110 and the four deflection plates 106 with respect to the beam axis 20 ensures that the first magnetic field and the second electrical field can be perpendicular to one another with high precision on the beam axis 20; due to the largely identical arrangement of the
  • the diameter of the opening 114 is given by the distance between the opposite baffle plates 106. Because the corrector 5 does not deflect the particle beam but only widens it, the diameter of the opening 114 can be kept small, which significantly reduces the expenditure for the generation of the necessary first electrical and first magnetic field.
  • the corrector 5 with the electrical or magnetic quadrupole is only one example of how the corrector can be constructed. For many applications, electrical and magnetic dipoles are sufficient instead of quadrupoles. The two
  • L5 dipoles can be designed similarly as shown in FIGS. 4a and 4b, the difference preferably being that instead of the four pole shoes, coils and deflection plates rotated by 90 degrees to one another, only two pole shoes, coils and deflection plates rotated by 180 degrees to one another are arranged are. 0
  • the corrector 5 can have electrical and magnetic octupoles instead of dipoles or quadrupoles.
  • the electrical and magnetic octupoles have instead of the four pole shoes rotated 90 degrees to each other,

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Particle Accelerators (AREA)
  • Electron Beam Exposure (AREA)

Abstract

Appareil à faisceau de particules et dispositif permettant de dévier à raison d'un angle de déviation prédéterminé, avec correction d'énergie, un faisceau de particules incident le long d'un axe de rayonnement, ledit faisceau de particules étant composé de particules chargées avec des énergies dispersées autour d'une valeur d'énergie prédéterminée. Ledit dispositif possède un correcteur qui soumet les particules chargées à des modifications de direction en fonction de leur énergie, à l'aide d'un premier champ électrique et d'un premier champ magnétique superposé, la direction des particules chargées qui présentent la valeur d'énergie prédéterminée restant maintenue lors de la traversée du correcteur. Ledit dispositif comporte en outre un déflecteur monté en aval du correcteur. Ce déflecteur dévie les particules chargées qui possèdent la valeur d'énergie prédéterminée à raison d'un angle de déviation prédéterminé par rapport à l'axe de rayonnement, à l'aide d'un second champ électrique ou d'un second champ magnétique, ledit déflecteur concentrant les particules chargées. Ledit dispositif comporte encore une commande destinée à commander le correcteur et le déflecteur.
EP02724193A 2001-05-11 2002-03-04 Systeme de deviation pour un appareil a faisceau de particules Withdrawn EP1386342A2 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10122957A DE10122957B4 (de) 2001-05-11 2001-05-11 Teilchenstrahlapparat mit energiekorrigierter Strahlablenkung sowie Vorrichtungund Verfahren zur energiekorrigierten Ablenkung eines Teilchenstrahls
DE10122957 2001-05-11
PCT/EP2002/002324 WO2002093610A2 (fr) 2001-05-11 2002-03-04 Systeme de deviation pour un appareil a faisceau de particules

Publications (1)

Publication Number Publication Date
EP1386342A2 true EP1386342A2 (fr) 2004-02-04

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EP02724193A Withdrawn EP1386342A2 (fr) 2001-05-11 2002-03-04 Systeme de deviation pour un appareil a faisceau de particules

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Country Link
US (1) US7105833B2 (fr)
EP (1) EP1386342A2 (fr)
JP (1) JP3899317B2 (fr)
KR (1) KR100881236B1 (fr)
DE (1) DE10122957B4 (fr)
TW (1) TW565871B (fr)
WO (1) WO2002093610A2 (fr)

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EP1517353B1 (fr) 2003-09-11 2008-06-25 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Système pour reduire la dispersion en énergie d'un faisceau de particules chargées pour un système à faisceau de particules chargées
EP1517354B1 (fr) 2003-09-11 2008-05-21 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Système à deux étages pour réduire la dispersion en énergie d'un faisceau de particules chargées pour un système à faisceau de particules chargées
JP5033314B2 (ja) * 2004-09-29 2012-09-26 株式会社日立ハイテクノロジーズ イオンビーム加工装置及び加工方法
KR101279028B1 (ko) * 2005-02-17 2013-07-02 가부시키가이샤 에바라 세이사꾸쇼 전자선장치
EP1883094B1 (fr) * 2006-07-24 2012-05-02 ICT, Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Appareil à faisceau de particules et procédé pour l'examen d'un échantillon
JP4273141B2 (ja) * 2006-07-27 2009-06-03 株式会社日立ハイテクノロジーズ 集束イオンビーム装置
JP5162113B2 (ja) * 2006-08-07 2013-03-13 ギガフォトン株式会社 極端紫外光源装置
US8487269B2 (en) * 2007-02-28 2013-07-16 Siemens Aktiengesellschaft Combined radiation therapy and magnetic resonance unit
TWI479570B (zh) 2007-12-26 2015-04-01 奈華科技有限公司 從樣本移除材料之方法及系統
JP2010062141A (ja) * 2008-08-04 2010-03-18 Komatsu Ltd 極端紫外光源装置
JP5645386B2 (ja) * 2009-09-30 2014-12-24 株式会社日立製作所 電磁場印加装置
EP2385542B1 (fr) * 2010-05-07 2013-01-02 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Dispositif à faisceau électrique doté de moyen de compensation de dispersion et procédé de son fonctionnement
JP6053919B2 (ja) * 2012-05-31 2016-12-27 シーメンス アクチエンゲゼルシヤフトＳｉｅｍｅｎｓ Ａｋｔｉｅｎｇｅｓｅｌｌｓｃｈａｆｔ 荷電粒子を偏向させる偏向板および偏向装置
US9691588B2 (en) 2015-03-10 2017-06-27 Hermes Microvision, Inc. Apparatus of plural charged-particle beams
KR200488645Y1 (ko) * 2016-12-09 2019-03-06 (주)트리플코어스코리아 음전극의 방열구조 및 이를 포함하는 플라즈마 스크러버
KR20240007062A (ko) * 2022-07-07 2024-01-16 가부시키가이샤 뉴플레어 테크놀로지 실장 기판, 블랭킹 애퍼처 어레이 칩, 블랭킹 애퍼처 어레이 시스템 및 멀티 하전 입자 빔 조사 장치

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Also Published As

Publication number Publication date
WO2002093610A2 (fr) 2002-11-21
KR100881236B1 (ko) 2009-02-03
US20040188630A1 (en) 2004-09-30
TW565871B (en) 2003-12-11
JP3899317B2 (ja) 2007-03-28
US7105833B2 (en) 2006-09-12
WO2002093610A3 (fr) 2003-03-20
DE10122957A1 (de) 2002-11-21
KR20040005943A (ko) 2004-01-16
JP2004527885A (ja) 2004-09-09
DE10122957B4 (de) 2005-06-02

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