EP1479108A1 - Structure de transistor bipolaire - Google Patents

Structure de transistor bipolaire

Info

Publication number
EP1479108A1
EP1479108A1 EP02707105A EP02707105A EP1479108A1 EP 1479108 A1 EP1479108 A1 EP 1479108A1 EP 02707105 A EP02707105 A EP 02707105A EP 02707105 A EP02707105 A EP 02707105A EP 1479108 A1 EP1479108 A1 EP 1479108A1
Authority
EP
European Patent Office
Prior art keywords
transistor structure
emitter
base
thyristor
bipolar transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP02707105A
Other languages
German (de)
English (en)
Inventor
Cesare Ronsisvalle
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Publication of EP1479108A1 publication Critical patent/EP1479108A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs
    • H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs

Definitions

  • the present invention relates to an improved bipolar transistor structure. More particularly, the invention relates to a bipolar transistor structure having conventional base, collector and emitter terminals.
  • the invention relates specifically, but not exclusively, to a bipolar transistor inserted into a bipolar transistors Darlington configuration and the following description is given with reference to this field of application with the only purpose to simplify its disclosure.
  • These kind of small spark engines normally include an electronic starter using power transistors and, in the most occasions, power .transistors in a Darlington configuration.
  • a transistor Darlington configuration includes a couple of bipolar transistors connected one to the other with a common collector terminal and with the base terminal of a first or driver transistor connected to the base terminal of a second transistor.
  • bipolar power transistors are often used connected one to the other in a Darlington configuration.
  • the technical problem of the present invention is that of providing a new bipolar transistor structure, inside a Darlington configuration if that is the case, such a structure having functional and structural features allowing to simplify the corresponding driving circuit or even to omit it.
  • Such a transistor structure should be suitable for semiconductor ' integration by a simple manufacturing process at low costs. Disclosure of Invention
  • the solution idea behind the invention is that of integrating on a same chip the power bipolar transistor and a Thyristor SCR device between the base terminal and the emitter terminal of said transistor.
  • the driving circuit of the Darlington configuration is extremely simplified and a simple current pulse signal on the gate terminal of the Thyristor SCR device allows realising a short-circuit between the base and the emitter terminals of the power transistor thus turning off the power transistor itself or the Darlington configuration wherein it is inserted.
  • a transistor of that kind is inside a Darlington configuration it's preferable to use an Emitter Switching .technology so that the base and emitter regions in the semiconductor chip are obtained by buried layers and corresponding sinker contact regions.
  • the invention further relates to a manufacturing process of such a transistor structure as defined in claims 8 and following.
  • - Figure 1 is a schematic view of a Darlington transistors structure realised according to the present invention
  • - Figure 2 shows a schematic view in a vertical cross section and enlarged scale of an integrated semiconductor circuit portion including at least a transistor according to the scheme of Figure 1;
  • Figures 3 and 4 show respective schematic views in vertical cross section and enlarged scale of a semiconductor material portion that is subjected to the process phase according to the present invention for manufacturing an integrated transistors structure as shown in Figure 2;
  • the Darlington structure 1 comprises a first driver transistor Tl, of the NPN type, having conventional terminals: a base Bl terminal, a collector Cl terminal and an emitter El terminal.
  • the transistor Tl is a power transistor for application with high currents and voltages.
  • the Darlington structure 1 comprises a second power transistor T2, of the NPN type, having conventional terminals: a base B2 terminal, a collector C2 terminal a d an emitter E2 terminal.
  • this second transistor T2 is a bipolar power transistor.
  • the two transistors Tl and T2 are connected one to the other with the emitter El of the first transistor Tl connected to the base B2 of the second transistor T2 and with common collectors Cl and C2 terminals.
  • the common collectors Cl and C2 correspond to the collector terminal C of the whole structure;
  • the base Bl of the first transistor Tl is the base terminal B of the whole structure while the emitter terminal E2 of - the second transistor is the emitter of the whole structure 1.
  • the terminal B, C and E correspond to the terminal of a single bipolar transistor and the whole portion included inside the dotted line may be considered a single power transistor.
  • the collector terminal C is normally coupled to a voltage supply reference.
  • a resistance R is connected between the collector terminal C and the base terminal B of the Darlington structure 1 ; the resistance R is integrated in the same chip.
  • the resistance R is a high voltage type, that is to say it is suitable to withstand high voltage values between its terminals. This resistance may be integrated according to what disclosed in the US patent No. 5,053,743.
  • an electronic device 3 a SCR thyristor device, is connected between the base B and the emitter E of the Darlington structure 1.
  • the thyristor device 3 is realised in a four-layer PNPN structur ,. that will be disclosed after.
  • the Darlington structure 1, the resistance R and the SCR thyristor device 3 are integrated into the same semiconductor material portion and form a monolithic integrated circuit.
  • the structure 1 may be manufactured even with an Emitter Switching (E.S) technology.
  • E.S Emitter Switching
  • both the emitter E and the base B are realised with buried layers and contact sinker wells, as shown in figure 2.
  • the Darlington structure 1 may be considered integrating also the driving circuit.
  • the driving circuit of the Darlington configuration is so simplified if compared to know " solutions that with a simple pulse signal on the gate terminal of the thyristor 3 SCR it's possible to establish a short circuit between the base B and the emitter E thus turning off the Darlington configuration.
  • a very simple circuit is required to apply the more suitable current pulse to the gate terminal of the thyristor.
  • the figures that represent cross sections of integrated circuit portions during its manufacturing process are not reproduced in scale but are reproduced to show the most important features of the invention.
  • the inventive process initially provides for a diffusion step.
  • the doping phases and the kind of the diffused regions are always disclosed just as a indicative and non-limitative example since they may be implemented in a dual manner.
  • This layer 5 has an N- type doping and a resistivity and thickness corresponding to the voltage level that the structure 1 may stand as a whole.
  • This epitaxial layer 5 may or may not contain an optional energy layer.
  • a first buried layer 6 (P-BL) is then realised to form the base B of the first transistor Tl and so of the Darlington structure 1.
  • a thermal oxide layer is formed on the surface; an aperture is defined through this oxide layer to realise, by a photolithography technique, a second buried layer 7 (N-BL) allowing to obtain the emitter E2 of the second transistor T2 of the Darlington structure 1.
  • a second " epitaxial layer 8 is grown having the same resistivity type of the first epitaxial layer 5 but with a thickness of few micron, for instance 4-6 micron, as schematically shown in figure 3.
  • the process is carried on with a diffusion phase of so-called sinker wells 9, 10, of the P and N type respectively, which are obtained inside the second epitaxial layer 8 and are provided to contact the corresponding base and emitter regions, that is the first 6 and the second buried layer 7.
  • the sinker diffusion 9, of the P type, is also used to form the anode of the thyristor 3 SCR.
  • FIG. 4 Obviously, at one side of figure 4 there are the first and the second transistors Tl, T2 of the Darlington configuration.
  • the other figures 5 and 6 show an enlarged portion of the same semiconductor material allowing seeing even the Darlington structure.
  • These layers 11, 12 are obtained by diffusion and are of a P and N+ type respectively. These layers 11, 12 are provided for the P body and N source regions of the thyristor in the Emitter Switching structure.
  • the layers obtained at the end of this process step provide a PNPN four layers structure as clearly shown in figure 5. More particularly, the P layer 11 is the gate of the thyristor device 3 while the N+ layer 12 is its cathode.
  • a gate contact 14 is provided over the P region 11 for the thyristor SCR that also correspond to the base B of the structure 1.
  • the thyristor area so realised is suitably sized so that the direct voltage drop (Vf) on this component is minor than the voltage drop base-emitter (Vbe) of the structure 1. In this manner an efficient short circuit is realised between the base B and the emitter E.
  • a second metallic layer 15 is provided to contact the anode of the thyristor 3 SCR and the base B of the Darlington structure 1 with the high voltage resistance R that is connected to the voltage supply reference.
  • the improved Darlington structure according to the present invention do solves the technical problem and reached various advantages the first of which is given on the fact that, inside a single integrated power circuit, a simple and efficient driving circuit is obtained for the transistor or the transistors Darlington structure.
  • the turning off speed is not very high but this is not a problem for the kind of applications wherein the Darlington structure is integrated.

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)

Abstract

L'invention concerne une structure améliorée de transistor bipolaire (1) pouvant être intégrée dans une configuration Darlington, cette structure étant du type avec bornes classiques de base (B), de collecteur (C) et d'émetteur (E) et comprenant une résistance (R) entre le collecteur (C) et la base (B) et un dispositif de thyristor (3) SCR entre la base (B) et l'émetteur (E). La résistance (R) est une résistance haute tension destinée à maintenir normalement en fonction la structure de transistor alors que le thyristor est un circuit de mise hors circuit qui est activé et piloté sur sa borne de grille.
EP02707105A 2002-02-28 2002-02-28 Structure de transistor bipolaire Withdrawn EP1479108A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/IT2002/000123 WO2003073509A1 (fr) 2002-02-28 2002-02-28 Structure de transistor bipolaire

Publications (1)

Publication Number Publication Date
EP1479108A1 true EP1479108A1 (fr) 2004-11-24

Family

ID=27764146

Family Applications (1)

Application Number Title Priority Date Filing Date
EP02707105A Withdrawn EP1479108A1 (fr) 2002-02-28 2002-02-28 Structure de transistor bipolaire

Country Status (4)

Country Link
EP (1) EP1479108A1 (fr)
CN (1) CN100390996C (fr)
AU (1) AU2002241256A1 (fr)
WO (1) WO2003073509A1 (fr)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1303338A (fr) * 1970-10-06 1973-01-17
US4032958A (en) * 1972-12-29 1977-06-28 Sony Corporation Semiconductor device
JPS5272183A (en) * 1975-12-12 1977-06-16 Mitsubishi Electric Corp Semiconductor device with protecting device
GB2030765B (en) * 1978-10-02 1983-04-27 Lumenition Ltd Darlington transistor pairs
DE3123667C2 (de) * 1981-06-15 1985-04-18 Robert Bosch Gmbh, 7000 Stuttgart Darlington-Transistorschaltung
FR2646019B1 (fr) * 1989-04-14 1991-07-19 Sgs Thomson Microelectronics Resistance spirale haute tension
DE4207349A1 (de) * 1992-03-07 1993-09-09 Telefunken Microelectron Leistungs-spannungsbegrenzungsschaltung

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO03073509A1 *

Also Published As

Publication number Publication date
WO2003073509A1 (fr) 2003-09-04
AU2002241256A1 (en) 2003-09-09
CN100390996C (zh) 2008-05-28
CN1623233A (zh) 2005-06-01

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