EP1564818A2 - Banc optique, dispositif capteur optique avec un banc optique et procédé de fabrication - Google Patents

Banc optique, dispositif capteur optique avec un banc optique et procédé de fabrication Download PDF

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Publication number
EP1564818A2
EP1564818A2 EP05002281A EP05002281A EP1564818A2 EP 1564818 A2 EP1564818 A2 EP 1564818A2 EP 05002281 A EP05002281 A EP 05002281A EP 05002281 A EP05002281 A EP 05002281A EP 1564818 A2 EP1564818 A2 EP 1564818A2
Authority
EP
European Patent Office
Prior art keywords
light source
optical bench
optical
mirror
stand
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP05002281A
Other languages
German (de)
English (en)
Other versions
EP1564818A3 (fr
Inventor
Woong-Lin Hwang
Hyung Choi
Jae-Ho You
Yong-Sung Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of EP1564818A2 publication Critical patent/EP1564818A2/fr
Publication of EP1564818A3 publication Critical patent/EP1564818A3/fr
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/10—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G47/00—Article or material-handling devices associated with conveyors; Methods employing such devices
    • B65G47/74—Feeding, transfer, or discharging devices of particular kinds or types
    • B65G47/88—Separating or stopping elements, e.g. fingers
    • B65G47/8807—Separating or stopping elements, e.g. fingers with one stop
    • B65G47/8823—Pivoting stop, swinging in or out of the path of the article
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16F—SPRINGS; SHOCK-ABSORBERS; MEANS FOR DAMPING VIBRATION
    • F16F9/00—Springs, vibration-dampers, shock-absorbers, or similarly-constructed movement-dampers using a fluid or the equivalent as damping medium
    • F16F9/02—Springs, vibration-dampers, shock-absorbers, or similarly-constructed movement-dampers using a fluid or the equivalent as damping medium using gas only or vacuum
    • F16F9/0209—Telescopic
    • F16F9/0218—Mono-tubular units
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/12—Heads, e.g. forming of the optical beam spot or modulation of the optical beam
    • G11B7/123—Integrated head arrangements, e.g. with source and detectors mounted on the same substrate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/12—Heads, e.g. forming of the optical beam spot or modulation of the optical beam
    • G11B7/13—Optical detectors therefor
    • G11B7/131—Arrangement of detectors in a multiple array
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/12—Heads, e.g. forming of the optical beam spot or modulation of the optical beam
    • G11B7/135—Means for guiding the beam from the source to the record carrier or from the record carrier to the detector
    • G11B7/1362—Mirrors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/12—Heads, e.g. forming of the optical beam spot or modulation of the optical beam
    • G11B7/22—Apparatus or processes for the manufacture of optical heads, e.g. assembly
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires

Definitions

  • the present invention relates to an optical pickup, and more particularly, to an optical bench, on which metal wirings and optical parts can be formed, disposed on a substrate on which a photo detector and a silicon optical bench (SiOB) are monolithically formed, a thin optical pickup that employs the optical bench, and a method of manufacturing the optical bench.
  • SiOB silicon optical bench
  • optical pickup devices are essential, and techniques of producing optical pickups for mobile information devices that become further miniaturized are being developed.
  • FIGS. 1A and 1B are respectively a perspective view and a cross-sectional view illustrating an optical bench used for a conventional thin optical pickup.
  • the conventional optical bench includes a silicon substrate 12, a light source stand 20, a metal wiring 14 formed on the silicon substrate 12 and the light source stand 20, bonding pads 22, and solder pads 16.
  • a light source such as a laser diode is mounted on the light source stand 20, and light emitted from the light source is incident on a 45° tilted mirror surface 24, which is a crystal surface of the silicon substrate 12 etched to have a ⁇ 111 ⁇ orientation. That is, a light beam emitted from the light source is spread out with a certain angle and then is incident on a Si ⁇ 111 ⁇ mirror surface with a predetermined spot size. Accordingly, if the light source stand 20 does not have a predetermined height with respect to a bottom surface 30 of the substrate 12 between the light source stand 20 and the mirror surface, some of the light emitted from the light source can not reach the mirror and is lost when it hits the bottom surtace30 of the substrate 12.
  • the light source stand 20 in order for all the light emitted from the light source within a predetermined angle to reflect from the mirror surface 24 without loss, the light source stand 20 must have a certain height with respect to the bottom surface 30 of the silicon substrate 12.
  • An electrode for supplying power to the laser diode is formed on the light source stand 20, and the light source of the laser diode is a flip-chip bonded by a solder bumper 16 composed of Au/Sn on the electrode.
  • the light source stand 20 is formed by dry etching (for example, reactive ion etching) the silicon substrate 12, and then, the mirror surface 24 having a 45° tilted Si ⁇ 111 ⁇ crystal surface 24 and the bottom surface 30 are formed by wet etching.
  • dry etching for example, reactive ion etching
  • the mirror surface 24 having a 45° tilted Si ⁇ 111 ⁇ crystal surface 24 and the bottom surface 30 are formed by wet etching.
  • FIG. 2A is a cross-sectional view illustrating a problem that occurs when a metal wiring is formed on an optical bench used for a conventional thin film optical pickup by wet etching.
  • the portion of the photoresists at the corner portions A and B are peeled off.
  • the metal layer After patterning the photoresist using a lithography process, the metal layer must be wet etched using the patterned photoresist as a mask. At this time, the portion of the metal layer an the corner portions A and B are removed. Therefore, the metal wiring is not connected at the corner portions A and B. Also, in the deep trench formed in the vicinity of the light source stand 20, the photoresist may remain after developing due to insufficient exposure.
  • FIG. 2B is a cross-sectional view illustrating a problem that occurs when performing a lift-off process for forming a metal wiring on an optical bench used for a conventional thin film optical pickup.
  • FIG. 2B illustrates a problem that occurs when performing a lift-off process to avoid the wet etching problem depicted in FIG. 2A.
  • the developing is performed excessively to remove the photoresist in the trench, too much of the photoresist on the surface of the silicon substrate 12 is removed resulting in an increased width of the metal wiring which can cause difficulty for maintaining a gap between wirings. If the developing is not sufficient, since the photoresist remaining in the trench C can not be removed completely, the metal wiring 14 is removed when removing the photoresist in a subsequent lift-off process, thereby disconnecting the metal wiring 14.
  • an optical bench comprising: a light source generating light for recording or reproducing information to or from an optical disc; a photo detector receiving the light; a light source stand on which a light source is mounted; a mirror facing the light source stand; and a bottom surface between the light source stand and the mirror surface, wherein a surface on which the photo detector is formed and the light source stand are connected by a first sloped surface, and the light source stand and the bottom surface are connected by a second sloped surface.
  • a method of forming an optical bench comprising: dry etching a region of a silicon substrate to a first depth to form a light source stand mounting a light source on a silicon substrate on which a photo detector is mounted; and forming a mirror and a bottom surface in front of the light source stand by wet etching the dry etched silicon substrate using a wet etch mask having a compensation pattern, wherein the an upper surface of the substrate on which the photo detector is formed and the light source stand is connected by a first sloped surface, and the light source stand and the bottom surface is connected by a second sloped surface.
  • a thin optical pickup that records and reproduces information to and from an optical disc, comprising: a light source generating light; a photo detector receiving the light; an optical element irradiating the light to the optical disc; an optical bench comprising a light source stand on which the light source is mounted, and a mirror reflecting light to the optical element, disposed in front of the light source stand; a bottom surface between the light source stand and the mirror surface; a heat radiation means combined to a surface of the optical bench; and a supporting means comprising a plurality of bonding pads facing the heat radiation means with the optical bench interposed therebetween, wherein the a surface on which the photo detector is formed and the light source stand are connected by a first sloped surface, and the light source stand and the bottom surface are connected by a second sloped surface.
  • FIGS. 3A and 3B are respectively a perspective view and a cross-sectional view illustrating an optical bench for use in a thin optical pickup according to an embodiment of the present invention.
  • an optical bench 100 comprises a light source stand 120 and a mirror surface 124 on a silicon substrate 112 on which a multi-segment photo detector and a monitoring photo diode are formed.
  • the mirror surface 124 is a Si ⁇ 111 ⁇ crystal surface tilted by 45° naturally formed by wet etching using a Si ⁇ 100 ⁇ silicon wafer tilted by 9.74°.
  • the multi-segment photo detector and the monitoring photo diode are not shown in FIGS. 3A and 3B. These elements will be described in detail with reference to FIG. 7.
  • the metal wirings 114 for the laser diode on the light source stand are disposed along left and right sloped walls of the light source stand 120.
  • the metal wirings 114 can be formed along any sloped walls126 and 126' of the light source stand 120 except those disposed along the mirror direction of the light source stand 120.
  • the location of the wirings 114 may vary slightly according to a layout design of the multi-segment photo detector and bond pads on the surface of the silicon substrate 112.
  • FIGS. 4A through 4F are cross-sectional views illustrating a method of manufacturing an optical bench for use in a thin optical pickup according to an embodiment of the present invention.
  • a silicon substrate 112 having a Si ⁇ 100 ⁇ crystal surface tilted by 9.74° is prepared.
  • a mask 113 for dry etching is formed on the silicon substrate 112 to make the light source stand parallel to the surface of the substrate 112.
  • the mask 113 can be composed of a photoresist and formed using a lithography process.
  • a light source stand region 115 is formed by dry etching the silicon substrate 112 using reactive ion etching (RIE).
  • RIE reactive ion etching
  • a wet etching protective mask 117 is formed on the dry etched silicon substrate 112.
  • the wet etching protective mask 117 of the present embodiment will be described in more detail with reference to FIGS. 5A through 6B.
  • a mirror surface 124, an optical stand and slopes 126 and 126' are formed in the silicon substrate 112 by wet etching the dry etched silicon substrate 112.
  • an insulating layer 118, metal wirings 114, and solder bumps 116 for flip-chipping a laser diode are sequentially formed on the wet etched silicon substrate 112.
  • FIGS. 5A and 5B illustrate a photomask for manufacturing an optical bench according to an embodiment of the present invention.
  • FIGS. 5A and 5B illustrate a shape of the silicon substrate, a shape of a wet etching protective layer formed on the silicon substrate, and a corner compensating pattern for forming the protective film after dry etching the substrate.
  • the corner compensating pattern acts as a protective barrier for protecting corner portions from etching due to a wet etching liquid penetrating the corners.
  • reference numeral 200 represents a dry etched region of the silicon substrate 112 and reference numeral 202 represents a region of the silicon substrate 112 to be wet etched.
  • Reference numeral 212 represents a region where a Si ⁇ 111 ⁇ mirror surface tilted 45° is to be formed and reference numeral 214 represents a region where a wall sloping at an angle of 64.48° with respect to the surface of the substrate and facing the mirror surface is to be formed. Slopes of walls on both the left and right sides of the mirror surfaces have angles of 55.6° with respect to the surface of the substrate. Accordingly, a dry etching depth d and wet etching widths w and w' are related such that a line of sloped surface formed by wet etching can match to a line of sloped surface formed by dry etching.
  • FIG. 5B illustrates a wet etching protective photomask pattern according to an embodiment of the present invention.
  • the wet etching protective photomask pattern has regions 204 and 208.
  • the zigzagged line, shaped as a saw tooth, in the region 208 prevents commencing of the formation of a Si ⁇ 111 ⁇ crystal surface by wet etching.
  • This line can have any shape except a straight line.
  • FIGS. 6A and 6B are drawings illustrate a photomask pattern for manufacturing an optical bench according to another embodiment of the present invention.
  • the photomask covers a portion of a silicon substrate that has been dry etched, and outlines a shape of a wet etching protective layer formed on the silicon substrate and a compensating pattern for protecting corner portions used for forming the wet etching protective layer.
  • the photomask includes a region 300 that has been dry etched, a region 302 for wet etching, a region 312 for forming a mirror surface, and a region 314 for forming an opposite surface of the mirror.
  • the relationship between the wet etching widths w and w' and the dry etching depth d is determined by formula 1.
  • the difference between the photomask of FIG. 5A and FIG. 5B is that the wet etching protective photomask pattern is not formed in one side of the dry etched region in the photomask of FIG. 5A and FIG. 5B.
  • the initial formation of the second slope occurs at a mirror side of the dry etched region. If the mirror side of the dry etched region, after proper etching, can perform the function of an etch stop line at which a Si ⁇ 111 ⁇ slope surface is begun by wet etching, a lithography process can be simply performed since the formation of a pattern on the dry-etched surface on which a step difference exists, as in FIG. 5A, is unnecessary.
  • the portion of the photomask used as a wet etching protective photomask has a saw tooth shape, but it can have a variety shapes as long as it can prevent the formation of the Si ⁇ 111 ⁇ crystal surface.
  • the photomask can be greater than the dry etching regions 200 and 300 and is placed on the regions 202 and 302 for wet etching.
  • FIG. 7 is a perspective view of a thin optical pickup using an optical bench according to an embodiment of the present invention
  • FIG. 8 is a cross-sectional view of a thin optical pickup shown in FIG. 7.
  • a thin film optical pickup 500 comprises a light source 512 such as a laser diode, a monitoring photo diode 534, a silicon optical bench (SiOB) 530 that includes a slope mirror 514 and a multi-segment photo detector 538, a polarizing beam splitter 516, a prism element 519 that includes first and second reflection surfaces 513 and 518, a hologram optical element (HOE) 520, an objective lens 526 attached to a predetermined region of a back surface of the SiOB 530 facing the HOE 520, a leaf spring 540 attached to the back surface of the SiOB 530, and a heat radiation plate 550 formed on a surface of the leaf spring 540.
  • a light source 512 such as a laser diode
  • SiOB silicon optical bench
  • 530 that includes a slope mirror 514 and a multi-segment photo detector 538
  • a polarizing beam splitter 516 that includes first and second reflection surfaces 513 and 518
  • a light source stand on which a light source such as a laser diode will be placed and the slope mirror 514 composed of Si ⁇ 111 ⁇ crystal surface are formed by dry etching and wet etching.
  • the light source 512 is flip-chip bonded to the light source stand.
  • the multi-segment photo detector 538 has a plurality of photodiodes.
  • the photodiodes of the multi-segment photo detector 538 are connected to respective bonding pads 533 on the SiOB 530 by the metal lines 536 for laser diode wiring.
  • the leaf spring 540 attached to the back surface of the SiOB 530 is composed of stainless steel (SUS) and controls a motor and a head combined therewith.
  • Bond pads 544 formed on an upper surface of the leaf spring 540 are wire bonded to the bond pads 533 on the SiOB 530.
  • the wirings are electrically connected to outside devices via the metal line 536 formed on the SiOB 530.
  • a second spacer 517 on which a monitoring mirror 511 facing the monitoring photodiode 534 is formed and a first spacer 515 which is mounted peripheral area of the multi-segment photo detector 538 are mounted on the SiOB 530.
  • the HOE 520 is interposed between a first reflection side of the prism element 519 and the SiOB 530.
  • the objective lens 526 is mounted on a side of the SiOB 530 opposite to the side of the SiOB 530 on which the HOE 520 is mounted.
  • the heat radiation plate 550 is mounted on a surface of the leaf spring 540 opposite to the surface of the leaf spring 540 on which the SiOB 530 is formed.
  • the thin optical pickup 500 having a structure in which the leaf spring 540 is interposed between a heat radiation plate 550 and the SiOB 530, has been described, however, the leaf spring 540 can be mounted on an upper surface of the SiOB 530.
  • a laser beam emitted from the light source 512 is totally reflected in a direction perpendicular to the substrate by the slope mirror 514. A portion of the laser beam emitted at a large enough angle is not reflected by the mirror 514 but enters the monitoring photo diode 534 after reflecting from a monitoring mirror 511, which monitors the intensity of the light emitted by the light source 512.
  • the light reflected perpendicularly with respect to the substrate by the mirror 514 of the SiOB 530 enters the HOE 520 after reflecting from the polarizing beam splitter 516 and the first reflection surface 513 of the prism element 519.
  • the light that enters the HOE 520 is focused to a point on an optical disc D by the objective lens 526.
  • the light reflected by the optical disc D is reflected by the first reflection surface 513 of the prism element 519 and then incident on the polarizing beam splitter 516. After passing the polarizing beam splitter 516, the laser beams enter the photo detector 538 after reflecting from the second reflection surface 518. The laser beams are transformed into electrical signals for measuring a tracking error, a focusing error, or an RF signal by the light detector 538.
  • a metal wiring can be formed by a single process of lithography without disconnections.
  • the width of a silicon optical bench can be narrowed since additional width for a light source trench formed in a conventional method of manufacturing a light source stand using continuous dry etching and wet etching is not required. This is a very important advantage for a field such as a mobile devices in which driving of a motor with minimal power is needed.
  • the shortened length of the LD wiring is a great advantage with respect to the radiation of heat and power consumption, especially, for a blue DVD pickup.

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Optical Head (AREA)
  • Semiconductor Lasers (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
EP05002281A 2004-02-07 2005-02-03 Banc optique, dispositif capteur optique avec un banc optique et procédé de fabrication Withdrawn EP1564818A3 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020040008173A KR100612838B1 (ko) 2004-02-07 2004-02-07 광학벤치, 이를 사용한 박형광픽업 및 그 제조방법
KR2004008173 2004-02-07

Publications (2)

Publication Number Publication Date
EP1564818A2 true EP1564818A2 (fr) 2005-08-17
EP1564818A3 EP1564818A3 (fr) 2007-08-22

Family

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Application Number Title Priority Date Filing Date
EP05002281A Withdrawn EP1564818A3 (fr) 2004-02-07 2005-02-03 Banc optique, dispositif capteur optique avec un banc optique et procédé de fabrication

Country Status (4)

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US (2) US7202464B2 (fr)
EP (1) EP1564818A3 (fr)
JP (1) JP4050279B2 (fr)
KR (1) KR100612838B1 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4356683B2 (ja) * 2005-01-25 2009-11-04 セイコーエプソン株式会社 デバイス実装構造とデバイス実装方法、液滴吐出ヘッド及びコネクタ並びに半導体装置
US7481545B2 (en) * 2005-10-13 2009-01-27 Avago Technologies Fiber Ip (Singapore) Pte. Ltd. Method of forming and mounting an angled reflector
JP5171489B2 (ja) * 2008-09-04 2013-03-27 キヤノン株式会社 異方性エッチングによる構造体の作製方法、及びエッチングマスク付きシリコン基板
KR101132680B1 (ko) * 2010-03-19 2012-04-03 김영혜 광전소자 패키지
TWI413118B (zh) * 2011-02-23 2013-10-21 Univ Nat Chiao Tung 光學讀寫頭
US8736080B2 (en) 2012-04-30 2014-05-27 Apple Inc. Sensor array package

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0981063A3 (fr) * 1992-07-14 2003-09-17 Seiko Epson Corporation Polarisateur, ELEMENT OPTIQUE ET TETE OPTIQUE
KR100253810B1 (ko) * 1997-07-10 2000-04-15 구자홍 이파장 광원모듈 및 그를 이용한 광픽업장치
JPH11134703A (ja) 1997-11-04 1999-05-21 Toshiba Corp 部品及びその製造方法
KR100461704B1 (ko) * 1999-08-04 2004-12-16 가부시키가이샤 히타치세이사쿠쇼 광헤드
JP2001102676A (ja) * 1999-09-27 2001-04-13 Toshiba Electronic Engineering Corp 光集積ユニット、光ピックアップ及び光記録媒体駆動装置
JP4471508B2 (ja) 2001-01-31 2010-06-02 京セラ株式会社 光部品実装用基板の製造方法
JP2004178755A (ja) * 2002-11-29 2004-06-24 Hitachi Ltd 光学デバイス、光ピックアップおよび光ディスク装置
KR100513734B1 (ko) * 2003-11-04 2005-09-08 삼성전자주식회사 박형 광픽업

Also Published As

Publication number Publication date
US7202464B2 (en) 2007-04-10
KR100612838B1 (ko) 2006-08-18
US20070264744A1 (en) 2007-11-15
US20050173614A1 (en) 2005-08-11
JP4050279B2 (ja) 2008-02-20
JP2005223333A (ja) 2005-08-18
KR20050079859A (ko) 2005-08-11
EP1564818A3 (fr) 2007-08-22

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