EP1677146A2 - Vorrichtung zur Herstellung einer Maske für die Plasmaätzung eines Halbleitersubstrats - Google Patents

Vorrichtung zur Herstellung einer Maske für die Plasmaätzung eines Halbleitersubstrats Download PDF

Info

Publication number: EP1677146A2
Authority: EP; European Patent Office
Prior art keywords: screen; substrate; etched; mask; area
Prior art date: 2005-01-03
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

EP05112633A

Other languages

English (en)

French (fr)

Other versions

EP1677146B1 (de

EP1677146A3 (de

Inventor

Michel Puech

Martial Chabloz

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Alcatel Lucent SAS

Original Assignee

Alcatel SA

Alcatel Lucent SAS

Nokia Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2005-01-03

Filing date

2005-12-21

Publication date

2006-07-05

2005-12-21 Application filed by Alcatel SA, Alcatel Lucent SAS, Nokia Inc filed Critical Alcatel SA

2006-07-05 Publication of EP1677146A2 publication Critical patent/EP1677146A2/de

2007-03-28 Publication of EP1677146A3 publication Critical patent/EP1677146A3/de

2012-09-19 Application granted granted Critical

2012-09-19 Publication of EP1677146B1 publication Critical patent/EP1677146B1/de

2025-12-21 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

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Classifications

- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof

Definitions

the micromachining of the silicon substrates is currently carried out by plasma etching techniques, such as that described in document US Pat. No. 5,501,893.
This technique consists in partially protecting the silicon substrate by an etching mask, and in submitting the substrate thus partially protected with an alternating succession of etching gas plasma etching steps and passivation plasma passivation steps.
a pattern to be burned is transferred to the substrate from a transmission mask. The transfer is usually carried out by the photolithography technique of irradiating the substrate through the photon radiation transmission mask.
the means for confining the ions comprises at least one screen made of conductive material disposed above the substrate and along the boundary separating the pattern area to be etched from the area not to be etched, said screen having the form of vertical plates arranged parallel to each side of the pattern area to be engraved quadrilateral.
the substrate comprises a plurality of zones comprising patterns to be etched separated from each other by zones that must not be etched.
a large number of patterns can be produced more quickly and cheaply.
each area to be engraved is surrounded by its own screen.
the screen is interrupted at the corners of the quadrilateral when the angle is distant from a piece of conductive material a distance less than or equal to the constant distance separating the screen of the boundary of the pattern area to be engraved to avoid edge effects.
the mask 3 is shown in perspective in FIG. 2. It comprises reliefs 4 with a depth p of 725 ⁇ m, for example.
the small surface 5 carrying the pattern to be engraved is for example a square surface of 1.13 mm side.
the surface 5 may further comprise holes of 120 nm in diameter, for example.
the membrane 6 has a thickness e of 2 ⁇ m, for example.
An electron beam 2 is sent on the mask 3. The beam 2 passes through the surface 5 to copy the pattern that it carries on the substrate.
the device 30 for manufacturing plasma etching masks of a semiconductor substrate 31 according to the present invention is shown diagrammatically in FIG. 3.
the masks once made are for example in the form of two rectangular zones 31a and 31b. b of etched patterns in the substrate 31, surrounded by a zone 31 c which has not been etched.
the zones 31a and 31b have, for example, a length of 132.57mm and a width of 54.43mm, and carry a pattern in a network.

Landscapes

Physics & Mathematics (AREA)
General Physics & Mathematics (AREA)
Electron Beam Exposure (AREA)
Drying Of Semiconductors (AREA)
Preparing Plates And Mask In Photomechanical Process (AREA)

EP05112633A 2005-01-03 2005-12-21 Vorrichtung zur Herstellung einer Maske für die Plasmaätzung eines Halbleitersubstrats Expired - Lifetime EP1677146B1 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
FR0550002A FR2880469B1 (fr)	2005-01-03	2005-01-03	Dispositif de fabrication d'un masque par gravure par plasma d'un substrat semiconducteur

Publications (3)

Publication Number	Publication Date
EP1677146A2 true EP1677146A2 (de)	2006-07-05
EP1677146A3 EP1677146A3 (de)	2007-03-28
EP1677146B1 EP1677146B1 (de)	2012-09-19

Family

ID=34953717

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
EP05112633A Expired - Lifetime EP1677146B1 (de)	2005-01-03	2005-12-21	Vorrichtung zur Herstellung einer Maske für die Plasmaätzung eines Halbleitersubstrats

Country Status (5)

Country	Link
US (1)	US7938907B2 (de)
EP (1)	EP1677146B1 (de)
JP (1)	JP5075337B2 (de)
CN (1)	CN100382250C (de)
FR (1)	FR2880469B1 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
KR101084268B1 (ko) *	2009-09-25	2011-11-16	삼성모바일디스플레이주식회사	기판 센터링 장치 및 이를 구비한 유기물 증착 시스템

Citations (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5501893A (en)	1992-12-05	1996-03-26	Robert Bosch Gmbh	Method of anisotropically etching silicon
US6352802B1 (en)	1999-05-28	2002-03-05	Nec Corporation	Mask for electron beam exposure and method of manufacturing semiconductor device using the same

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3887421A (en) *	1973-01-22	1975-06-03	Gen Motors Corp	Method of masking semiconductor wafers using a self-aligning mask
JPS63151948A (ja) *	1986-12-15	1988-06-24	Nec Corp	露光用マスク
US5891348A (en) *	1996-01-26	1999-04-06	Applied Materials, Inc.	Process gas focusing apparatus and method
JPH09246251A (ja) *	1996-03-01	1997-09-19	Sony Corp	半導体製造装置及び半導体製造方法
JPH1174252A (ja) *	1997-08-28	1999-03-16	Sony Corp	半導体装置および製造方法
US6383938B2 (en) *	1999-04-21	2002-05-07	Alcatel	Method of anisotropic etching of substrates
JP2001007013A (ja) *	1999-06-24	2001-01-12	Nikon Corp	転写マスクブランクス及びその製造方法
JP2002299226A (ja) *	2001-04-03	2002-10-11	Nikon Corp	電子線露光用ステンシルマスク及びその作製方法
JP2002329711A (ja) *	2001-05-01	2002-11-15	Matsushita Electric Ind Co Ltd	平行平板型電極プラズマ処理装置
FR2834382B1 (fr) *	2002-01-03	2005-03-18	Cit Alcatel	Procede et dispositif de gravure anisotrope du silicium a haut facteur d'aspect
JP2003273002A (ja) *	2002-03-14	2003-09-26	Sony Corp	マスクの製造方法
US6960263B2 (en) *	2002-04-25	2005-11-01	Applied Materials, Inc.	Shadow frame with cross beam for semiconductor equipment

2005
- 2005-01-03 FR FR0550002A patent/FR2880469B1/fr not_active Expired - Fee Related
- 2005-12-21 EP EP05112633A patent/EP1677146B1/de not_active Expired - Lifetime
- 2005-12-26 JP JP2005371907A patent/JP5075337B2/ja not_active Expired - Fee Related
- 2005-12-29 US US11/319,630 patent/US7938907B2/en active Active
2006
- 2006-01-04 CN CNB2006100003062A patent/CN100382250C/zh not_active Expired - Lifetime

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5501893A (en)	1992-12-05	1996-03-26	Robert Bosch Gmbh	Method of anisotropically etching silicon
US6352802B1 (en)	1999-05-28	2002-03-05	Nec Corporation	Mask for electron beam exposure and method of manufacturing semiconductor device using the same

Also Published As

Publication number	Publication date
US20060148274A1 (en)	2006-07-06
FR2880469A1 (fr)	2006-07-07
CN1801462A (zh)	2006-07-12
JP5075337B2 (ja)	2012-11-21
CN100382250C (zh)	2008-04-16
EP1677146B1 (de)	2012-09-19
EP1677146A3 (de)	2007-03-28
FR2880469B1 (fr)	2007-04-27
JP2006191043A (ja)	2006-07-20
US7938907B2 (en)	2011-05-10

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