EP1727231B1 - Integriertes mikroelektronisches Bauelement für Filterung von elektromagnetichem Rauschen und zugehörige Hochfrequenz-Übertragungsschaltung - Google Patents

Integriertes mikroelektronisches Bauelement für Filterung von elektromagnetichem Rauschen und zugehörige Hochfrequenz-Übertragungsschaltung Download PDF

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Publication number
EP1727231B1
EP1727231B1 EP06354015A EP06354015A EP1727231B1 EP 1727231 B1 EP1727231 B1 EP 1727231B1 EP 06354015 A EP06354015 A EP 06354015A EP 06354015 A EP06354015 A EP 06354015A EP 1727231 B1 EP1727231 B1 EP 1727231B1
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European Patent Office
Prior art keywords
component according
magnetic
ferromagnetic material
circuit
layer
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EP06354015A
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English (en)
French (fr)
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EP1727231A1 (de
Inventor
Jean-Philippe Michel
Yann Lamy
Anne-Sophie Royet
Bernard Viala
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Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Commissariat a lEnergie Atomique CEA
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/20—Frequency-selective devices, e.g. filters
    • H01P1/215—Frequency-selective devices, e.g. filters using ferromagnetic material

Definitions

  • the invention relates to an integrated microelectronic component comprising an electrical conductor, constituting a transmission line element for a radiofrequency electromagnetic wave, and means for filtering, especially by magnetic resonance, electromagnetic noise, said electromagnetic noise filtering means comprising a layer of ferromagnetic material. It also relates to a radiofrequency transmission circuit comprising such a component.
  • the known devices using ferromagnetic resonance do not make it possible to reach frequency ranges greater than 2 GHz by the single gyromagnetic effect. Moreover, they involve the use of relatively large line lengths, typically between 5 and 15 mm, to satisfy a sufficient absorption capacity.
  • the object of the invention is to provide an integrated microelectronic component that does not have these disadvantages and, more particularly, that allows operation in high frequency ranges without the need for an auxiliary magnetic field source.
  • the electromagnetic noise filtering means are constituted by a magnetic circuit surrounding the conductor and formed at least by the superimposition of said layer of ferromagnetic material and a layer of magnetic material, so that the layer of magnetic material generates in the layer of adjacent ferromagnetic material a magnetic anisotropy uniaxial.
  • the invention also relates to a transmission circuit comprising at least one microelectronic component of this type.
  • the integrated microelectronic component C of the MMIC type, comprises a substrate 1 on which is deposited a layer 2 of insulating material.
  • a conductor 3 constituting an element of a signal transmission line is integrated in the layer 2.
  • component C is integrated in a transmission circuit comprising two coplanar ground planes 4, parallel to the conductor 3 and arranged on either side thereof.
  • the conductor 3, as the ground planes 4 have contact pads 5 at their ends.
  • the conductor 3 is surrounded by a magnetic circuit 6 for filtering electromagnetic noise, conventionally constituted by one or more parasitic frequencies and associated with the wave passing through the transmission line.
  • the magnetic circuit 6 is a closed magnetic circuit, that is to say without gap, totally surrounding the conductor 3.
  • the magnetic circuit 6 may comprise one or more air gaps. However, it surrounds the driver almost completely 3.
  • the walls of the magnetic circuit 6 are constituted by the superposition of at least two layers, namely a layer 7 of ferromagnetic material f and a layer 8 of magnetic material m.
  • the order of the layers 7 and 8 with respect to the electrical conductor 3 is irrelevant.
  • the magnetic circuit 6 may consist of the alternation of a plurality of layers 7 of ferromagnetic material f and layers 8 of magnetic material m. More generally, the walls of the magnetic circuit 6 can thus, from the outside, be constituted by the superposition of layers (f / m) n as represented in FIG. figure 4 , (m / f) n or (m / f / m) n as shown in FIG. figure 5 , n being an integer greater than or equal to 1.
  • a layer 8 of magnetic material m and a layer 7 of ferromagnetic material f generates in the layer of ferromagnetic material f adjacent a magnetic anisotropy uniaxial or increases its natural anisotropy, for example by exchange coupling effect at the interface in the case where m is an antiferromagnetic layer.
  • the magnetic circuit 6, preferably closed, surrounding the electrical conductor 3 serving as an RF transmission line or an RF transmission line element thus constitutes a magnetic microresonator based on the gyromagnetic resonance effect (in the operating mode illustrated in FIG. the figure 11 ) or the wavelength reduction effect (in the operating mode shown in figure 12 ).
  • the electromagnetic field generated by the transmission line is confined as far as possible within the microresonator.
  • Hk uniaxial anisotropy
  • the layer 7, made of ferromagnetic material f firstly has the function of ensuring saturation magnetization as high as possible.
  • the ferromagnetic material need not be soft and is preferably made of CoFe, cobalt and iron alloys, which have the strongest known magnetizations. However, these materials were hitherto discarded for RF applications because they are not naturally soft. Indeed, they have a coercive field Hc too high, of the order of 3kA / m (or 40 Oe), while conventional soft materials, such as permalloy for example, are characterized by values typically less than or equal to about 80A / m (1 Oe).
  • Iron and cobalt alloys which also do not have uniaxial magnetic anisotropy, either natural or induced by conventional magnetic field deposition methods, do not initially have the desired dynamic properties for the generation of a magnetic effect. ferromagnetic resonance.
  • the layer 7 made of ferromagnetic material is rendered electrically insulating by mixing the aforementioned alloys with a small amount, advantageously less than 1% by weight, of a dielectric material, for example alumina (Al2O3).
  • a dielectric material for example alumina (Al2O3).
  • the material is then preferably in granular form.
  • the layer 8, of magnetic material m serves to ensure the anisotropy of the ferromagnetic layer 7.
  • the magnetic material is an antiferromagnetic material.
  • the antiferromagnetic materials used are preferably manganese-based alloys (Mn) and a member selected from nickel (Ni), iron (Fe), platinum (Pt) and iridium (Ir). They can advantageously be made from nickel oxides and / or iron and / or cobalt.
  • the layer 8, magnetic material m may also be hard magnetic material, permanent magnet type.
  • the material of this layer may then be chosen from iron / samarium (Fe / Sm), cobalt / samarium (Co / Sm), cobalt / platinum (Co / Pt), cobalt / chromium (Co / Pt) alloys. / Cr) and iron / neodyne / boron (FeNdB).
  • the magnetic and ferromagnetic layers are advantageously formed by sputtering, for example by sputtering, evaporation or ion sputtering.
  • the Figures 6 and 7 illustrate the variation of the FMR ferromagnetic resonance frequency as a function of the respective thicknesses of the layers 7 made of ferromagnetic material and 8 of magnetic material for a closed magnetic circuit 6 comprising a layer 7 made of CoFe (respectively Fe 65 Co 35 , Co 50 Fe 50 and Co 90 Fe 10 ) between two layers 8 of NiMn.
  • the thickness e AF of the layers 8 of antiferromagnetic material is kept constant at 500 ⁇ .
  • the ferromagnetic resonance frequency then varies from 3GHz to 10Ghz, when the thickness e F of the thin layer 7 of ferromagnetic material increases from 2000 ⁇ to 100 ⁇ .
  • the thickness e F of the layer 7 made of ferromagnetic material is kept constant at 500 ⁇ .
  • the ferromagnetic resonance frequency initially between 1.8 and 3.5 GHz (depending on the particular CoFe alloy chosen) increases to about 5Ghz, when the thickness e AF of the layer 8 of antiferromagnetic material increases from 100 ⁇ to 600 ⁇ .
  • the respective thicknesses of the layers of magnetic material and of ferromagnetic material can be chosen according to the intended applications, so as to adapt the frequencies by varying the thicknesses of the layers 7 and 8.
  • the different layers 7 and 8 may all have the same thickness or different thicknesses.
  • the Figures 8 to 10 illustrate the choice of the operating point (represented by a black dot) on a diagram representing the variations of the attenuation S 21 as a function of the frequency f for various applications.
  • the respective thicknesses of the layers 7 and 8 are chosen so that a single resonance peak is centered on a frequency to be filtered, to achieve a single band-stop filtering function.
  • the respective thicknesses of the layers 7 and 8 are chosen so that separate, non-overlapping resonance peaks are respectively centered on different frequencies to be filtered, to achieve a multi-band filtering function or a bandpass function .
  • the choice of two or three appropriate thicknesses in particular makes it possible to define two or three separate resonance peaks for dual or triple band-pass filtering functions.
  • the figure 10 illustrates the combination of overlapping multiple resonance peaks for carrying out filtering functions for eliminating the transmission of signals in the upper spectral band, in particular for low-pass filters and noise suppressor filters.
  • FIGS. 11 and 12 illustrate the choice of the operating point on a diagram showing, in solid lines, the variations of the magnetic losses ⁇ "as a function of the frequency f, with three separate resonance peaks, each corresponding to a different permeability ⁇ ', represented in dotted lines.
  • the component, in which the electrical conductor 3 constitutes an element of an RF transmission line or an RF transmission line can be used in its absorption band, with an operating point centered on the magnetic resonance frequency. It can also, as represented at figure 12 , be used before its absorption band to increase the inductance and quality factor of the line and / or reduce the length of the line by decreasing the wavelength of the signal. Such a transmission line element can then be used in a transmission line for microwave applications. This makes it possible to improve the performance and compactness of existing circuits (RLC filters, half-wave and quarter-wave lines, etc.) and to create new functionalities.
  • the combination of layers 7 and 8 makes it possible to exploit for dynamic purposes the coherent rotation of the magnetization at 90 ° to the trapping direction resulting from the exchange coupling.
  • the magnetization of the layer 7 made of ferromagnetic material is kept in a quasi-saturated state because of the strong entrapment due to the exchange torque.
  • the layers are naturally of the single-domain type (monodomain) and it is thus possible to overcome the problems conventionally related to the distribution of magnetization domains.
  • the theoretical dissipative behavior is then quasi-optimal, the rotation of the magnetization at 90 ° of the trapping direction is similar to the theoretical ideal case in which the moment distribution is homogeneous and the layers without domain.
  • the different layers 7 made of ferromagnetic material may have identical or opposite trapping directions depending on the intended applications. These trapping directions can also be oriented, identically or differently, as needed.
  • the component can be manufactured by standard manufacturing processes used in microelectronics.
  • the Figures 13 to 15 illustrate, in section, three possible embodiments for producing the magnetic circuit 6 surrounding the electrical conductor 3.
  • a cavity is formed in the substrate 1.
  • This cavity has a flat bottom and two inclined flat side walls, flaring upwardly of the cavity.
  • the inclined side walls of the cavity are at an angle of 54 ° 7 with the horizontal.
  • the bottom and the walls of the cavity are covered by the insulating material 2.
  • a lower part of the magnetic circuit 6 is then formed by successive deposition of the various layers 7 and 8 constituting it on the bottom and the walls of the cavity.
  • the electrical conductor 3 is formed inside the cavity by deposition of the conductor, then planarization.
  • a layer of insulating material 2, whose thickness controls the thickness of the gap of the magnetic circuit 6, is then deposited flat on the cavity. Then, a plane wall constituting the upper part of the magnetic circuit 6 is formed by deposition of the different layers 7 and 8 above this last layer of insulation. As shown on the figure 13 , the magnetic circuit 6, surrounding substantially all of the conductor 3, thus comprises 2 air gaps between its lower and upper parts.
  • a cavity is formed in a layer of insulating material 2 covering the substrate 1.
  • this cavity has a flat bottom and two inclined side walls flaring upwards. It is formed in the insulating material 2 by etching from a lithographed resin (for example PFRIX420 19Cp) having flanks at the edges of patterns at an angle between 10 ° and 45 ° with the horizontal. Adjustment of this angle is possible, for example using a proximity insolation technique with a controlled distance between the mask and the resin. This controlled distance is typically between 10 and 100 ⁇ m. Another possible technique is to use phase-contrast masks.
  • the lower part of the magnetic circuit 6 is then formed by successive deposition of the various layers 7 and 8 constituting it on the bottom and the walls of the cavity.
  • the electrical conductor 3 is formed inside the cavity by deposition of the conductor, then planarization.
  • a layer of insulating material 2, whose thickness controls the thickness of the gap of the magnetic circuit 6, is then deposited flat on the cavity.
  • a plane wall constituting the upper part of the magnetic circuit 6 is formed by deposition of the different layers 7 and 8 above this last layer of insulation.
  • the lower part of the magnetic circuit 6 is constituted by a flat wall formed on a layer 2 of insulating material, by successive deposition of the different layers 7 and 8.
  • the driver 3 is formed inside a box made of the insulating material. It is then covered by the insulating material.
  • the insulating material is then etched, to the lower part of the magnetic circuit 6, with a trapezoidal shape, delimited by a flat top wall and by two inclined side walls, tapering upwards.
  • the trapezium is formed in the insulating material 2 by etching from a lithographed resin (for example PFRIX420 19Cp) having flanks on the edge of patterns at an angle between 10 ° and 45 ° with the horizontal.
  • a lithographed resin for example PFRIX420 19Cp
  • the adjustment of this angle is possible, for example by using a proximity insolation technique with a controlled distance, typically between 10 and 100 ⁇ m, between the mask and the resin or by using phase-contrast masks.
  • the upper part of the magnetic circuit is then formed by deposit successive layers 7 and 8 constituting it on the flat upper wall and on the inclined side walls of the trapezium.
  • the upper part of the circuit 6 is in contact with its lower part, thus producing a closed magnetic circuit 6.
  • the variant embodiments of the Figures 14 and 15 are advantageous compared to the variant embodiment of the figure 13 because they reduce the angles formed by the inclined side walls and the horizontal to values between 10 ° and 45 °. This makes it possible to guarantee the dynamic performances (high permeability) of the magnetic material deposited on these inclined lateral walls.
  • the variant embodiment according to the figure 15 is all the more advantageous that it is the only one to allow the realization of a closed magnetic circuit 6, with an optimum lower part with respect to the slope of the inclined walls and an optimum upper part consisting of a flat wall.
  • An upper part consisting of a flat wall is, on the other hand, not feasible with the production methods used in the variants of embodiments of the invention.
  • Figures 13 and 14 if you want a closed magnetic circuit.
  • the lateral parts of the magnetic circuit 6 of the component of the figure 15 can be omitted, thus forming (as on the Figures 13 and 14 ) a magnetic circuit with 2 air gaps.
  • the component according to the invention thus forms a magnetic microresonator which can be used indifferently in coplanar, microstrip or tri-plate topology.
  • the manufacture of such a component is compatible with the techniques of microelectronics and with different types of substrates (Si, SOI, ceramic, PCB, Kapton® ).
  • the component according to the invention makes it possible, in coplanar topology, to adjust the central frequency of a filter from 2 to 20 GHz, with a maximum attenuation of -30 dB / mm and insertion losses below -3dB / mm.
  • the Figures 16 to 18 illustrate various embodiments of a radio frequency transmission circuit using at least one component C.
  • the transmission circuit according to the figure 16 differs from the transmission circuit according to the figure 3 in that the magnetic circuit 6 of the component C is grounded, for example by means of transverse electrical connections 9, connecting the magnetic circuit 6 to the ground planes 4 arranged on either side of the component C. This allows to increase the absorption capacity of the circuit.
  • three transverse electrical connections 9 are associated with each ground plane. Two of these connections 9 ends connect the ends of the magnetic circuit 6 to the ends of the associated ground plane, while a third connection 9, central, is disposed between the other two.
  • the circuit according to the figure 17 is different from the circuit according to the figure 16 by removing the part of the ground planes 4 which is arranged between the two electrical connections 9 ends.
  • the conductor 3 of the component C belongs to a central transmission line, arranged between two lateral ground planes 4
  • a transmission circuit may comprise several components C.
  • the circuits according to the Figures 18 and 19 are distinguished from the circuit according to the figure 3 in that they comprise two components (C1, C2), arranged respectively between a central transmission line (10) and the lateral ground planes (4).
  • C1, C2 the components that are connected to the central transmission line (10) and the conductors 3 of the components C1 and C2
  • connections 11 at their ends to the central transmission line are electrically connected by connections 11 at their ends to the central transmission line.
  • Several components C1 (or C2) may also be arranged, for example side by side or one above the other, between the central transmission line 10 and one of the ground planes 4.

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Claims (18)

  1. Mikroelektronisches integriertes Bauteil, das mindestens einen elektrischen Leiter (3) umfasst, der ein Element einer Übertragungsleitung für eine elektrische Radiofrequenzwelle bildet, sowie Mittel zum Filtern des elektromagnetischen Rauschens, welche Filterungsmittel für das elektromagnetische Rauschen eine Schicht (7) aus ferromagnetischem Material umfassen, Bauteil, das dadurch gekennzeichnet, dass das ferromagnetische Material einen Magnetisierungssättigungswert (Ms) größer oder gleich 800 kA/m hat und die Filterungsmittel für das elektromagnetische Rauschen von einem Magnetkreis (6) gebildet werden, der den Leiter (3) umgibt und mindestens durch das Übereinanderanordnen der besagten Schicht (7) aus ferromagnetischem Material und einer Schicht (8) aus magnetischem Material gebildet wird, damit die Schicht aus magnetischem Material (8) in der angrenzenden Schicht (7) aus ferromagnetischem Material eine uniaxiale magnetische Anisotropie erzeugt.
  2. Bauteil nach Anspruch 1, dadurch gekennzeichnet, dass der Magnetkreis (6), der den Leiter (3) umgibt, ein geschlossener Magnetkreis ist.
  3. Bauteil nach Anspruch 1, dadurch gekennzeichnet, dass der Magnetkreis (6), der den Leiter (3) umgibt, mindestens einen Spalt aufweist.
  4. Bauteil nach einem der Ansprüche 1 bis 3, dadurch gekennzeichnet, dass das ferromagnetische Material einen Magnetisierungssättigungswert (Ms) in der Größenordnung von 1920 kA/m hat.
  5. Bauteil nach einem der Ansprüche 1 bis 4, dadurch gekennzeichnet, dass der Magnetkreis (6) von der abwechselnden Anordnung einer Mehrzahl von Schichten (7) aus ferromagnetischem Material und Schichten (8) aus magnetischem Material gebildet wird.
  6. Bauteil nach einem der Ansprüche 1 bis 5, dadurch gekennzeichnet, dass das magnetische Material ein antiferromagnetisches Material ist.
  7. Bauteil nach Anspruch 6, dadurch gekennzeichnet, dass das antiferromagnetische Material ausgewählt ist aus Legierungen auf Manganbasis und einem Element, das aus Nickel, Eisen, Platin und Iridium ausgewählt ist.
  8. Bauteil nach Anspruch 6, dadurch gekennzeichnet, dass das antiferromagnetische Material aus Nickel- und/oder Eisen- und/oder Kobaltoxiden hergestellt ist.
  9. Bauteil nach einem der Ansprüche 1 bis 5, dadurch gekennzeichnet, dass das magnetische Material ein hartes magnetisches Material ist.
  10. Bauteil nach Anspruch 9, dadurch gekennzeichnet, dass das magnetische Material ausgewählt ist aus Eisen-Samarium-, Kobalt-Samarium-, Kobalt-Platin-, Kobalt-Chrom- und Eisen-Neodym-Bor-Legierungen.
  11. Bauteil nach einem der Ansprüche 1 bis 10, dadurch gekennzeichnet, dass das ferromagnetische Material ausgewählt ist aus Eisen, Kobalt, Legierungen auf Basis von Eisen und/oder Kobalt.
  12. Bauteil nach Anspruch 11, dadurch gekennzeichnet, dass das ferromagnetische Material aus Fe65CO35, C050Fe50 und Co90Fe10 ausgewählt ist.
  13. Bauteil nach einem der Ansprüche 1 bis 12, dadurch gekennzeichnet, dass die jeweiligen Dicken der Schichten (7, 8) aus magnetischem und ferromagnetischem Material so gewählt sind, dass ein einziger Resonanzpeak auf eine zu filtrierende Frequenz zentriert ist.
  14. Bauteil nach einem der Ansprüche 1 bis 12, dadurch gekennzeichnet, dass die Dicken der Schichten (7, 8) aus magnetischem und ferromagnetischem Material so gewählt sind, dass getrennte Resonanzpeaks jeweils auf verschiedene zu filtrierende Frequenzen zentriert sind.
  15. Bauteil nach einem der Ansprüche 1 bis 14, dadurch gekennzeichnet, dass der Magnetkreis (6) an Masse gelegt ist.
  16. Übertragungsschaltkreis, der mindestens eine zentrale Übertragungsleitung und zwei seitliche Masseebenen (4) umfasst, dadurch gekennzeichnet, dass er mindestens ein Bauteil nach einem der Ansprüche 1 bis 15 umfasst.
  17. Schaltkreis nach Anspruch 16, dadurch gekennzeichnet, dass der Leiter (3) des Bauteils zur zentralen Übertragungsleitung gehört.
  18. Schaltkreis nach Anspruch 16, dadurch gekennzeichnet, dass er mindestens zwei Bauteile (C1, C2) umfasst, die jeweils zwischen der zentralen Übertragungsleitung (10) und den seitlichen Masseebenen (4) angeordnet sind.
EP06354015A 2005-05-27 2006-05-04 Integriertes mikroelektronisches Bauelement für Filterung von elektromagnetichem Rauschen und zugehörige Hochfrequenz-Übertragungsschaltung Ceased EP1727231B1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0505346A FR2886465B1 (fr) 2005-05-27 2005-05-27 Composant microelectronique integre pour filtrage du bruit electromagnetique et circuit de transmission radiofrequence le comprenant

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EP1727231A1 EP1727231A1 (de) 2006-11-29
EP1727231B1 true EP1727231B1 (de) 2008-12-31

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EP06354015A Ceased EP1727231B1 (de) 2005-05-27 2006-05-04 Integriertes mikroelektronisches Bauelement für Filterung von elektromagnetichem Rauschen und zugehörige Hochfrequenz-Übertragungsschaltung

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US (1) US7385469B2 (de)
EP (1) EP1727231B1 (de)
JP (1) JP4823764B2 (de)
DE (1) DE602006004501D1 (de)
FR (1) FR2886465B1 (de)

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Publication number Priority date Publication date Assignee Title
WO2005093450A1 (en) * 2004-03-29 2005-10-06 Koninklijke Philips Electronics N.V. System for magnetic resonance imaging
FR3066858B1 (fr) * 2017-05-23 2019-06-21 Soitec Procede pour minimiser une distorsion d'un signal dans un circuit radiofrequence

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US4853660A (en) * 1988-06-30 1989-08-01 Raytheon Company Integratable microwave devices based on ferromagnetic films disposed on dielectric substrates
US4980657A (en) * 1989-09-29 1990-12-25 Westinghouse Electric Corp. Coplanar waveguide frequency selective limiter
US5594397A (en) * 1994-09-02 1997-01-14 Tdk Corporation Electronic filtering part using a material with microwave absorbing properties
JP3921246B2 (ja) * 1994-12-22 2007-05-30 Ｎｅｃトーキン株式会社 ノイズフィルタ用薄膜
JPH1012442A (ja) * 1996-06-24 1998-01-16 Daido Steel Co Ltd 広帯域ノイズフィルタ
US5892412A (en) * 1997-02-20 1999-04-06 Lucent Technologies Inc. Method of and an apparatus for tunable passive-gain equalization
JPH10289821A (ja) * 1997-04-15 1998-10-27 Matsushita Electric Ind Co Ltd 高周波帯域用磁気デバイス
JP2002111233A (ja) * 2000-10-03 2002-04-12 Victor Co Of Japan Ltd プリント配線板及びその製造方法
JP2003257739A (ja) * 2002-02-28 2003-09-12 Koa Corp 高周波デバイス

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JP2007006466A (ja) 2007-01-11
US20060290442A1 (en) 2006-12-28
EP1727231A1 (de) 2006-11-29
FR2886465A1 (fr) 2006-12-01
DE602006004501D1 (de) 2009-02-12
FR2886465B1 (fr) 2007-07-13
US7385469B2 (en) 2008-06-10
JP4823764B2 (ja) 2011-11-24

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