EP1887637A3 - Baugruppe für eine lichtemittierende Vorrichtung und Verfahren zu ihrer Herstellung - Google Patents

Baugruppe für eine lichtemittierende Vorrichtung und Verfahren zu ihrer Herstellung Download PDF

Info

Publication number: EP1887637A3
Authority: EP; European Patent Office
Prior art keywords: light emitting; emitting device; manufacturing; same; device package
Prior art date: 2006-08-08
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

EP07253107A

Other languages

English (en)

French (fr)

Other versions

EP1887637B1 (de

EP1887637A2 (de

Inventor

Geun Ho LG Electronics Inc. IP Group Kim

Yu Ho LG Electronics Inc. IP Group Won

Chil Keun LG Electronics Inc. IP Group Park

Ki Chang LG Electronics Inc. IP Group Song

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

LG Electronics Inc

LG Innotek Co Ltd

Original Assignee

LG Electronics Inc

LG Innotek Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2006-08-08

Filing date

2007-08-08

Publication date

2010-09-15

2006-08-08 Priority claimed from KR20060074751A external-priority patent/KR101163492B1/ko

2006-08-21 Priority claimed from KR20060078635A external-priority patent/KR100845864B1/ko

2006-12-19 Priority claimed from KR20060130114A external-priority patent/KR100866879B1/ko

2007-08-08 Application filed by LG Electronics Inc, LG Innotek Co Ltd filed Critical LG Electronics Inc

2008-02-13 Publication of EP1887637A2 publication Critical patent/EP1887637A2/de

2010-09-15 Publication of EP1887637A3 publication Critical patent/EP1887637A3/de

2016-12-14 Application granted granted Critical

2016-12-14 Publication of EP1887637B1 publication Critical patent/EP1887637B1/de

Status Not-in-force legal-status Critical Current

2027-08-08 Anticipated expiration legal-status Critical

Links

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/8506—Containers
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/0198—Manufacture or treatment batch processes
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/851—Dispositions of multiple connectors or interconnections
- H10W72/874—On different surfaces
- H10W72/884—Die-attach connectors and bond wires
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
- H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
- H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

Led Device Packages (AREA)
Led Devices (AREA)

EP07253107.2A 2006-08-08 2007-08-08 Leuchtdiodenbauelement Not-in-force EP1887637B1 (de)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
KR20060074751A KR101163492B1 (ko)	2006-08-08	2006-08-08	발광 소자 패키지
KR20060078635A KR100845864B1 (ko)	2006-08-21	2006-08-21	발광 소자 패키지 및 그 제조방법
KR20060130114A KR100866879B1 (ko)	2006-12-19	2006-12-19	발광 소자 패키지 및 그 제조방법

Publications (3)

Publication Number	Publication Date
EP1887637A2 EP1887637A2 (de)	2008-02-13
EP1887637A3 true EP1887637A3 (de)	2010-09-15
EP1887637B1 EP1887637B1 (de)	2016-12-14

Family

ID=38616342

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
EP07253107.2A Not-in-force EP1887637B1 (de)	2006-08-08	2007-08-08	Leuchtdiodenbauelement

Country Status (4)

Country	Link
US (3)	US20080035942A1 (de)
EP (1)	EP1887637B1 (de)
JP (3)	JP2008042211A (de)
TW (1)	TWI418054B (de)

Families Citing this family (65)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US20080035942A1 (en)	2006-08-08	2008-02-14	Lg Electronics Inc.	Light emitting device package and method for manufacturing the same
US8283683B2 (en) *	2006-11-07	2012-10-09	Opto Tech Corporation	Chip-bonding light emitting diode chip
WO2008151009A1 (en) *	2007-05-31	2008-12-11	Lumination Llc	Environmentally robust lighting devices and methods of manufacturing same
CN100483762C (zh) *	2008-02-25	2009-04-29	鹤山丽得电子实业有限公司	一种发光二极管器件的制造方法
CN101577300A (zh) *	2008-05-08	2009-11-11	先进开发光电股份有限公司	发光二极管及其封装方法
KR100982989B1 (ko) *	2008-05-19	2010-09-17	삼성엘이디 주식회사	발광 다이오드 패키지
TWI475718B (zh) *	2008-05-21	2015-03-01	榮創能源科技股份有限公司	發光二極體及其封裝方法
US20100117106A1 (en) *	2008-11-07	2010-05-13	Ledengin, Inc.	Led with light-conversion layer
KR101515426B1 (ko) *	2008-11-11	2015-04-27	삼성디스플레이 주식회사	백라이트 어셈블리, 백라이트 어셈블리를 포함하는 액정 표시 장치, 및 이들의 제조 방법
KR101020993B1 (ko)	2009-03-10	2011-03-09	엘지이노텍 주식회사	발광소자 패키지 및 그 제조방법
KR101081055B1 (ko) *	2009-07-24	2011-11-07	엘지이노텍 주식회사	발광소자 패키지 및 그 제조방법
KR101124102B1 (ko) *	2009-08-24	2012-03-21	삼성전기주식회사	발광 소자 패키지용 기판 및 이를 포함하는 발광 소자 패키지
TW201110430A (en) *	2009-09-04	2011-03-16	yi-zhang Chen	Heat dissipation substrate of light-emitting diode and its manufacturing method thereof
DE102009051746A1 (de) *	2009-09-30	2011-03-31	Osram Opto Semiconductors Gmbh	Optoelektronisches Bauelement
TWI403005B (zh) *	2009-10-12	2013-07-21	英特明光能股份有限公司	發光二極體及其製作方法
KR101114150B1 (ko) *	2009-10-19	2012-03-09	엘지이노텍 주식회사	발광 소자
JP5526712B2 (ja)	2009-11-05	2014-06-18	豊田合成株式会社	半導体発光素子
DE102009053064A1 (de) *	2009-11-13	2011-05-19	Osram Opto Semiconductors Gmbh	Dünnfilm-Halbleiterbauelement mit Schutzdiodenstruktur und Verfahren zur Herstellung eines Dünnfilm-Halbleiterbauelements
KR101276333B1 (ko) *	2009-11-30	2013-06-18	한국전자통신연구원	3차원 인터커넥션 구조 및 그 제조 방법
KR101186648B1 (ko) *	2009-12-21	2012-09-28	서울반도체 주식회사	Ｌｅｄ 패키지 및 그의 제조 방법
KR20110080318A (ko) *	2010-01-05	2011-07-13	엘지이노텍 주식회사	발광 소자 패키지
CN102804430B (zh) *	2010-01-19	2015-11-25	Lg伊诺特有限公司	封装结构及其制造方法
US9196805B2 (en) *	2010-02-09	2015-11-24	Nichia Corporation	Light emitting device and method for manufacturing light emitting device
KR20110094996A (ko) *	2010-02-18	2011-08-24	엘지이노텍 주식회사	발광소자 패키지, 그 제조방법 및 조명시스템
US8858022B2 (en)	2011-05-05	2014-10-14	Ledengin, Inc.	Spot TIR lens system for small high-power emitter
US8993358B2 (en)	2011-12-28	2015-03-31	Ledengin, Inc.	Deposition of phosphor on die top by stencil printing
US8354745B2 (en) *	2010-04-20	2013-01-15	Intellectual Discovery Co., Ltd.	Electronic assembly
TWI456798B (zh) *	2010-04-23	2014-10-11	璨圓光電股份有限公司	發光裝置之製造方法
WO2011145794A1 (ko)	2010-05-18	2011-11-24	서울반도체 주식회사	파장변환층을 갖는 발광 다이오드 칩과 그 제조 방법, 및 그것을 포함하는 패키지 및 그 제조 방법
JP5775375B2 (ja) *	2010-07-27	2015-09-09	日東電工株式会社	発光ダイオード装置の製造方法
TWI487145B (zh) *	2010-09-17	2015-06-01	Everlight Electronics Co Ltd	用於一微型投影系統之發光二極體裝置
US20120068218A1 (en) *	2010-09-17	2012-03-22	Taiwan Semiconductor Manufacturing Company, Ltd.	Thermally efficient packaging for a photonic device
CN102412359B (zh) *	2010-09-21	2018-12-07	亿光电子(中国)有限公司	用于一微型投影系统的发光二极管装置
US20120113621A1 (en) *	2010-11-10	2012-05-10	Taiwan Semiconductor Manufacturing Company, Ltd.	Batwing beam based led and backlight module using the same
JP5641334B2 (ja) *	2011-01-26	2014-12-17	Ｎｌｔテクノロジー株式会社	照明装置及び液晶表示装置
KR101761834B1 (ko)	2011-01-28	2017-07-27	서울바이오시스 주식회사	웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법
CN102738353A (zh) *	2011-04-12	2012-10-17	国碁电子(中山)有限公司	Led封装结构
KR101237566B1 (ko)	2011-07-20	2013-02-26	삼성전기주식회사	전력 모듈 패키지 및 그 제조방법
KR101945532B1 (ko) *	2011-08-16	2019-02-07	루미리즈 홀딩 비.브이.	슬롯에 형성된 반사 벽을 갖는 led 혼합 챔버
ITMI20111777A1 (it) *	2011-09-30	2013-03-31	St Microelectronics Srl	Sistema elettronico per saldatura ad onda
CN102403422A (zh) *	2011-11-17	2012-04-04	深圳市天电光电科技有限公司	一种led封装结构的加工方法及led封装结构
US8900892B2 (en)	2011-12-28	2014-12-02	Ledengin, Inc.	Printing phosphor on LED wafer using dry film lithography
CN103199172B (zh) *	2012-01-10	2015-10-07	展晶科技(深圳)有限公司	发光二极管封装结构的制造方法
CN103258920A (zh) *	2012-02-17	2013-08-21	展晶科技(深圳)有限公司	发光二极管封装结构的制造方法
KR101318145B1 (ko) *	2012-03-29	2013-10-15	크루셜텍 (주)	엘이디 패키지
KR102129146B1 (ko) *	2012-03-30	2020-07-02	루미리즈 홀딩 비.브이.	밀봉된 반도체 발광 장치
DE112013006419B4 (de)	2012-10-22	2023-07-27	Sensor Electronic Technology Inc.	Verfahren zum Unterbringen von Zweidrahtbauelementen in einem Gehäuse, Verfahren zum Unterbringen von Zweidrahtleuchtdioden(LED)-Bauelementen in einem Gehäuse und Zweidraht(LED)-Gehäuseanordnung
DE102013202904A1 (de) *	2013-02-22	2014-08-28	Osram Opto Semiconductors Gmbh	Optoelektronisches Halbleiterbauteil und Verfahren zu seiner Herstellung
US8847261B1 (en) *	2013-03-14	2014-09-30	Cooledge Lighting Inc.	Light-emitting devices having engineered phosphor elements
US9234801B2 (en)	2013-03-15	2016-01-12	Ledengin, Inc.	Manufacturing method for LED emitter with high color consistency
WO2014150263A1 (en) *	2013-03-15	2014-09-25	Ledengin, Inc.	Printing phosphor on led wafer using dry film lithography
WO2015038064A2 (en) *	2013-09-10	2015-03-19	Heptagon Micro Optics Pte. Ltd.	Compact opto-electronic modules and fabrication methods for such modules
WO2015093593A1 (ja) *	2013-12-19	2015-06-25	ローム株式会社	電子装置
CN103855280B (zh) *	2014-01-26	2018-05-18	上海瑞丰光电子有限公司	一种led晶片级封装方法
KR20150096198A (ko) *	2014-02-14	2015-08-24	삼성전자주식회사	발광 소자 패키지 및 그 제조 방법
CN105090902A (zh) *	2014-05-06	2015-11-25	奇想创造事业股份有限公司	安装面具有隔槽的塑料灯座及具有该灯座的塑料灯泡
US9853197B2 (en) *	2014-09-29	2017-12-26	Bridgelux, Inc.	Light emitting diode package having series connected LEDs
CN104638090B (zh) *	2014-12-18	2018-03-06	上海大学	倒装led封装模组
DE102016106896A1 (de) *	2016-04-14	2017-10-19	Osram Opto Semiconductors Gmbh	Lichtemittierendes Bauteil
JP2016189488A (ja) *	2016-07-07	2016-11-04	日亜化学工業株式会社	発光装置
TWI610403B (zh) *	2017-03-03	2018-01-01	矽品精密工業股份有限公司	基板結構及其製法與電子封裝件
CN109166849A (zh) *	2018-10-12	2019-01-08	哈尔滨理工大学	超小尺寸rgb封装单元的制作方法
CN109742212A (zh) *	2018-12-21	2019-05-10	华中科技大学鄂州工业技术研究院	一种led封装结构与封装方法
JP7570863B2 (ja) *	2020-09-24	2024-10-22	スタンレー電気株式会社	半導体発光装置及び半導体発光モジュール
JP7621783B2 (ja)	2020-12-10	2025-01-27	スタンレー電気株式会社	半導体発光装置及び半導体発光素子の支持基板

Citations (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
EP0890996A2 (de) *	1997-07-07	1999-01-13	Asahi Rubber Inc.	Durchsichtige Beschichtung für Leuchtdioden und fluoreszierende Lichtquellen
EP1179858A2 (de) *	2000-08-09	2002-02-13	Agilent Technologies Inc	Lichtemittierende Vorrichtungen
EP1198016A2 (de) *	2000-10-13	2002-04-17	LumiLeds Lighting U.S., LLC	Schablonieren von Leuchtstoffschichten auf lichtemittierenden Dioden
EP1411557A2 (de) *	2002-10-16	2004-04-21	Stanley Electric Co., Ltd.	LED mit einem Wellenlängen-Konverter für Autos
WO2006048064A1 (de) *	2004-11-03	2006-05-11	Tridonic Optoelectronics Gmbh	Leuchtdioden-anordnung mit farbkonversions-material
EP1811581A2 (de) *	2006-01-24	2007-07-25	Shinko Electric Industries Co., Ltd.	Herstellungsverfahren für eine Lichtemissionsvorrichtung
EP1850399A1 (de) *	2006-04-25	2007-10-31	ILED Photoelectronics Inc.	Vergussstruktur für eine weisse Leuchtdiode

Family Cites Families (43)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH0343750U (de) *	1989-09-04	1991-04-24
JP3832877B2 (ja) *	1995-07-26	2006-10-11	日亜化学工業株式会社	セラミックスｌｅｄパッケージおよびその製造方法
JP2947344B2 (ja) *	1997-08-19	1999-09-13	サンケン電気株式会社	発光ダイオード装置
JP2000208822A (ja)	1999-01-11	2000-07-28	Matsushita Electronics Industry Corp	半導体発光装置
DE19918370B4 (de) *	1999-04-22	2006-06-08	Osram Opto Semiconductors Gmbh	LED-Weißlichtquelle mit Linse
JP2001298216A (ja) *	2000-04-12	2001-10-26	Matsushita Electric Ind Co Ltd	表面実装型の半導体発光装置
DE10020465A1 (de) *	2000-04-26	2001-11-08	Osram Opto Semiconductors Gmbh	Strahlungsemittierendes Halbleiterbauelement mit Lumineszenzkonversionselement
US6614057B2 (en) *	2001-02-07	2003-09-02	Universal Display Corporation	Sealed organic optoelectronic structures
DE10117889A1 (de) *	2001-04-10	2002-10-24	Osram Opto Semiconductors Gmbh	Leiterrahmen und Gehäuse für ein strahlungsemittierendes Bauelement, strahlungsemittierendes Bauelement sowie Verfahren zu dessen Herstellung
JP2002373950A (ja)	2001-06-15	2002-12-26	Seiko Instruments Inc	気密封止ｉｃパッケージの製造方法
US6734465B1 (en) *	2001-11-19	2004-05-11	Nanocrystals Technology Lp	Nanocrystalline based phosphors and photonic structures for solid state lighting
JP2003188422A (ja)	2001-12-20	2003-07-04	Alps Electric Co Ltd	発光装置及びその製造方法
JP3707688B2 (ja) *	2002-05-31	2005-10-19	スタンレー電気株式会社	発光装置およびその製造方法
US7768189B2 (en) *	2004-08-02	2010-08-03	Lumination Llc	White LEDs with tunable CRI
US7264378B2 (en) *	2002-09-04	2007-09-04	Cree, Inc.	Power surface mount light emitting die package
KR20040021951A (ko)	2002-09-06	2004-03-11	럭스피아 주식회사	백색 발광다이오드
TW200414572A (en) *	2002-11-07	2004-08-01	Matsushita Electric Industrial Co Ltd	LED lamp
KR20040044701A (ko)	2002-11-21	2004-05-31	삼성전기주식회사	발광소자 패키지 및 그 제조방법
EP1603170B1 (de)	2003-03-10	2018-08-01	Toyoda Gosei Co., Ltd.	Verfahren zur herstellung einer optischen festelementeinrichtung
US7495322B2 (en) *	2003-05-26	2009-02-24	Panasonic Electric Works Co., Ltd.	Light-emitting device
JP4645071B2 (ja) *	2003-06-20	2011-03-09	日亜化学工業株式会社	パッケージ成型体およびそれを用いた半導体装置
DE102004063978B4 (de) *	2003-07-17	2019-01-24	Toyoda Gosei Co., Ltd.	Lichtemittierende Vorrichtung
JP2005086044A (ja) *	2003-09-09	2005-03-31	Citizen Electronics Co Ltd	高信頼性パッケージ
US7029935B2 (en) *	2003-09-09	2006-04-18	Cree, Inc.	Transmissive optical elements including transparent plastic shell having a phosphor dispersed therein, and methods of fabricating same
US7183587B2 (en) *	2003-09-09	2007-02-27	Cree, Inc.	Solid metal block mounting substrates for semiconductor light emitting devices
JP4366154B2 (ja) *	2003-09-16	2009-11-18	スタンレー電気株式会社	半導体発光装置及び製造方法
JP2005093712A (ja) *	2003-09-17	2005-04-07	Stanley Electric Co Ltd	半導体発光装置
KR20050034936A (ko) *	2003-10-10	2005-04-15	삼성전기주식회사	형광체를 이용한 파장변환형 발광 다이오드 패키지 및제조방법
JP2005252219A (ja) *	2004-02-06	2005-09-15	Toyoda Gosei Co Ltd	発光装置及び封止部材
JP4572312B2 (ja) *	2004-02-23	2010-11-04	スタンレー電気株式会社	Ｌｅｄ及びその製造方法
US7514867B2 (en) *	2004-04-19	2009-04-07	Panasonic Corporation	LED lamp provided with optical diffusion layer having increased thickness and method of manufacturing thereof
JP4471356B2 (ja) *	2004-04-23	2010-06-02	スタンレー電気株式会社	半導体発光装置
KR100765945B1 (ko) *	2004-08-06	2007-10-10	가부시끼가이샤 아라이도 마테리아루	집합기판, 반도체소자 탑재부재, 반도체장치, 촬상장치,발광다이오드 구성부재, 및 발광다이오드
JP2006060058A (ja)	2004-08-20	2006-03-02	Matsushita Electric Works Ltd	表面実装型電子部品、及び表面実装型電子部品を備えた照明器具
JP2006086176A (ja) *	2004-09-14	2006-03-30	Hitachi Kyowa Engineering Co Ltd	Ｌｅｄ用サブマウント及びその製造方法
WO2006033239A1 (ja) *	2004-09-22	2006-03-30	Kabushiki Kaisha Toshiba	発光装置とそれを用いたバックライトおよび液晶表示装置
JP2006093486A (ja) *	2004-09-27	2006-04-06	Kyocera Corp	発光素子搭載用基板および発光装置
US20060097385A1 (en) *	2004-10-25	2006-05-11	Negley Gerald H	Solid metal block semiconductor light emitting device mounting substrates and packages including cavities and heat sinks, and methods of packaging same
KR101161383B1 (ko) *	2005-07-04	2012-07-02	서울반도체 주식회사	발광 다이오드 및 이를 제조하기 위한 방법
JP2007184319A (ja)	2006-01-04	2007-07-19	Showa Denko Kk	半導体発光装置
US7943952B2 (en) *	2006-07-31	2011-05-17	Cree, Inc.	Method of uniform phosphor chip coating and LED package fabricated using method
US20080035942A1 (en)	2006-08-08	2008-02-14	Lg Electronics Inc.	Light emitting device package and method for manufacturing the same
KR100888684B1 (ko)	2006-08-25	2009-03-13	에스.오.아이. 테크 실리콘 온 인슐레이터 테크놀로지스	광검출장치

2007
- 2007-08-07 US US11/890,543 patent/US20080035942A1/en not_active Abandoned
- 2007-08-07 TW TW096129104A patent/TWI418054B/zh not_active IP Right Cessation
- 2007-08-08 EP EP07253107.2A patent/EP1887637B1/de not_active Not-in-force
- 2007-08-08 JP JP2007206625A patent/JP2008042211A/ja active Pending
2010
- 2010-04-07 US US12/755,822 patent/US9166123B2/en active Active
2012
- 2012-05-16 JP JP2012112171A patent/JP2012178604A/ja active Pending
- 2012-06-22 US US13/530,880 patent/US20120261705A1/en not_active Abandoned
2014
- 2014-04-23 JP JP2014089542A patent/JP2014135521A/ja active Pending

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
EP0890996A2 (de) *	1997-07-07	1999-01-13	Asahi Rubber Inc.	Durchsichtige Beschichtung für Leuchtdioden und fluoreszierende Lichtquellen
EP1179858A2 (de) *	2000-08-09	2002-02-13	Agilent Technologies Inc	Lichtemittierende Vorrichtungen
EP1198016A2 (de) *	2000-10-13	2002-04-17	LumiLeds Lighting U.S., LLC	Schablonieren von Leuchtstoffschichten auf lichtemittierenden Dioden
EP1411557A2 (de) *	2002-10-16	2004-04-21	Stanley Electric Co., Ltd.	LED mit einem Wellenlängen-Konverter für Autos
WO2006048064A1 (de) *	2004-11-03	2006-05-11	Tridonic Optoelectronics Gmbh	Leuchtdioden-anordnung mit farbkonversions-material
EP1811581A2 (de) *	2006-01-24	2007-07-25	Shinko Electric Industries Co., Ltd.	Herstellungsverfahren für eine Lichtemissionsvorrichtung
EP1850399A1 (de) *	2006-04-25	2007-10-31	ILED Photoelectronics Inc.	Vergussstruktur für eine weisse Leuchtdiode

Also Published As

Publication number	Publication date
US20080035942A1 (en)	2008-02-14
TW200816525A (en)	2008-04-01
US20120261705A1 (en)	2012-10-18
US9166123B2 (en)	2015-10-20
JP2012178604A (ja)	2012-09-13
JP2014135521A (ja)	2014-07-24
TWI418054B (zh)	2013-12-01
EP1887637B1 (de)	2016-12-14
US20100187556A1 (en)	2010-07-29
EP1887637A2 (de)	2008-02-13
JP2008042211A (ja)	2008-02-21

Legal Events

Date	Code	Title	Description
2008-01-11	PUAI	Public reference made under article 153(3) epc to a published international application that has entered the european phase	Free format text: ORIGINAL CODE: 0009012
2008-02-13	AK	Designated contracting states	Kind code of ref document: A2 Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC MT NL PL PT RO SE SI SK TR
2008-02-13	AX	Request for extension of the european patent	Extension state: AL BA HR MK YU
2010-08-13	PUAL	Search report despatched	Free format text: ORIGINAL CODE: 0009013
2010-09-15	AK	Designated contracting states	Kind code of ref document: A3 Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC MT NL PL PT RO SE SI SK TR
2010-09-15	AX	Request for extension of the european patent	Extension state: AL BA HR MK RS
2011-03-30	17P	Request for examination filed	Effective date: 20110221
2011-05-18	AKX	Designation fees paid	Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC MT NL PL PT RO SE SI SK TR
2012-07-11	17Q	First examination report despatched	Effective date: 20120611
2016-04-22	REG	Reference to a national code	Ref country code: DE Ref legal event code: R079 Ref document number: 602007049123 Country of ref document: DE Free format text: PREVIOUS MAIN CLASS: H01L0033000000 Ipc: H01L0033480000
2016-05-16	GRAP	Despatch of communication of intention to grant a patent	Free format text: ORIGINAL CODE: EPIDOSNIGR1
2016-06-01	RIC1	Information provided on ipc code assigned before grant	Ipc: H01L 33/48 20100101AFI20160422BHEP Ipc: H01L 33/50 20100101ALI20160422BHEP
2016-06-08	RAP1	Party data changed (applicant data changed or rights of an application transferred)	Owner name: LG ELECTRONICS INC. Owner name: LG INNOTEK CO., LTD
2016-06-15	INTG	Intention to grant announced	Effective date: 20160517
2016-09-28	GRAS	Grant fee paid	Free format text: ORIGINAL CODE: EPIDOSNIGR3
2016-11-11	GRAA	(expected) grant	Free format text: ORIGINAL CODE: 0009210
2016-12-14	AK	Designated contracting states	Kind code of ref document: B1 Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC MT NL PL PT RO SE SI SK TR
2016-12-14	REG	Reference to a national code	Ref country code: GB Ref legal event code: FG4D
2016-12-15	REG	Reference to a national code	Ref country code: CH Ref legal event code: EP
2017-01-11	REG	Reference to a national code	Ref country code: IE Ref legal event code: FG4D
2017-01-15	REG	Reference to a national code	Ref country code: AT Ref legal event code: REF Ref document number: 854296 Country of ref document: AT Kind code of ref document: T Effective date: 20170115
2017-01-26	REG	Reference to a national code	Ref country code: DE Ref legal event code: R096 Ref document number: 602007049123 Country of ref document: DE
2017-02-28	PG25	Lapsed in a contracting state [announced via postgrant information from national office to epo]	Ref country code: LV Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20161214
2017-03-01	REG	Reference to a national code	Ref country code: NL Ref legal event code: FP
2017-04-10	REG	Reference to a national code	Ref country code: LT Ref legal event code: MG4D
2017-04-28	PG25	Lapsed in a contracting state [announced via postgrant information from national office to epo]	Ref country code: SE Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20161214 Ref country code: LT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20161214 Ref country code: GR Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20170315
2017-05-15	REG	Reference to a national code	Ref country code: AT Ref legal event code: MK05 Ref document number: 854296 Country of ref document: AT Kind code of ref document: T Effective date: 20161214
2017-05-17	RAP2	Party data changed (patent owner data changed or rights of a patent transferred)	Owner name: LG ELECTRONICS INC. Owner name: LG INNOTEK CO., LTD.
2017-05-31	PG25	Lapsed in a contracting state [announced via postgrant information from national office to epo]	Ref country code: FI Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20161214
2017-07-10	REG	Reference to a national code	Ref country code: FR Ref legal event code: PLFP Year of fee payment: 11
2017-07-31	PG25	Lapsed in a contracting state [announced via postgrant information from national office to epo]	Ref country code: IS Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20170414 Ref country code: SK Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20161214 Ref country code: RO Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20161214 Ref country code: CZ Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20161214 Ref country code: EE Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20161214
2017-08-31	PG25	Lapsed in a contracting state [announced via postgrant information from national office to epo]	Ref country code: BG Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20170314 Ref country code: BE Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20161214 Ref country code: ES Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20161214 Ref country code: PT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20170414 Ref country code: AT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20161214 Ref country code: PL Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20161214 Ref country code: IT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20161214
2017-09-15	REG	Reference to a national code	Ref country code: DE Ref legal event code: R097 Ref document number: 602007049123 Country of ref document: DE
2017-10-20	PLBE	No opposition filed within time limit	Free format text: ORIGINAL CODE: 0009261
2017-10-20	STAA	Information on the status of an ep patent application or granted ep patent	Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT
2017-11-22	26N	No opposition filed	Effective date: 20170915
2017-11-30	PG25	Lapsed in a contracting state [announced via postgrant information from national office to epo]	Ref country code: DK Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20161214
2018-02-28	PG25	Lapsed in a contracting state [announced via postgrant information from national office to epo]	Ref country code: SI Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20161214
2018-03-29	REG	Reference to a national code	Ref country code: CH Ref legal event code: PL
2018-03-30	PG25	Lapsed in a contracting state [announced via postgrant information from national office to epo]	Ref country code: MC Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20161214
2018-04-30	PG25	Lapsed in a contracting state [announced via postgrant information from national office to epo]	Ref country code: CH Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20170831 Ref country code: LI Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20170831
2018-05-30	REG	Reference to a national code	Ref country code: IE Ref legal event code: MM4A
2018-06-29	PG25	Lapsed in a contracting state [announced via postgrant information from national office to epo]	Ref country code: LU Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20170808
2018-07-10	REG	Reference to a national code	Ref country code: FR Ref legal event code: PLFP Year of fee payment: 12
2018-07-31	PG25	Lapsed in a contracting state [announced via postgrant information from national office to epo]	Ref country code: IE Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20170808
2018-09-28	PG25	Lapsed in a contracting state [announced via postgrant information from national office to epo]	Ref country code: MT Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20170808
2019-06-28	PG25	Lapsed in a contracting state [announced via postgrant information from national office to epo]	Ref country code: HU Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT; INVALID AB INITIO Effective date: 20070808
2019-10-31	PG25	Lapsed in a contracting state [announced via postgrant information from national office to epo]	Ref country code: CY Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20161214
2020-03-31	PG25	Lapsed in a contracting state [announced via postgrant information from national office to epo]	Ref country code: TR Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20161214
2021-05-05	REG	Reference to a national code	Ref country code: DE Ref legal event code: R082 Ref document number: 602007049123 Country of ref document: DE Representative=s name: KILBURN & STRODE LLP, NL
2021-09-29	REG	Reference to a national code	Ref country code: DE Ref legal event code: R081 Ref document number: 602007049123 Country of ref document: DE Owner name: LG INNOTEK CO., LTD., KR Free format text: FORMER OWNERS: LG ELECTRONICS INC., SEOUL, KR; LG INNOTEK CO., LTD., SEOUL/SOUL, KR Ref country code: DE Ref legal event code: R081 Ref document number: 602007049123 Country of ref document: DE Owner name: SUZHOU LEKIN SEMICONDUCTOR CO. LTD., TAICANG, CN Free format text: FORMER OWNERS: LG ELECTRONICS INC., SEOUL, KR; LG INNOTEK CO., LTD., SEOUL/SOUL, KR Ref country code: DE Ref legal event code: R081 Ref document number: 602007049123 Country of ref document: DE Owner name: LG ELECTRONICS INC., KR Free format text: FORMER OWNERS: LG ELECTRONICS INC., SEOUL, KR; LG INNOTEK CO., LTD., SEOUL/SOUL, KR
2021-11-30	PGFP	Annual fee paid to national office [announced via postgrant information from national office to epo]	Ref country code: GB Payment date: 20210726 Year of fee payment: 15
2023-03-31	PGFP	Annual fee paid to national office [announced via postgrant information from national office to epo]	Ref country code: NL Payment date: 20230221 Year of fee payment: 16
2023-04-26	GBPC	Gb: european patent ceased through non-payment of renewal fee	Effective date: 20220808
2023-04-28	PGFP	Annual fee paid to national office [announced via postgrant information from national office to epo]	Ref country code: FR Payment date: 20230221 Year of fee payment: 16
2023-05-30	REG	Reference to a national code	Ref country code: DE Ref legal event code: R081 Ref document number: 602007049123 Country of ref document: DE Owner name: LG INNOTEK CO., LTD., KR Free format text: FORMER OWNERS: LG ELECTRONICS INC., SEOUL, KR; SUZHOU LEKIN SEMICONDUCTOR CO. LTD., TAICANG, SUZHOU, CN Ref country code: DE Ref legal event code: R081 Ref document number: 602007049123 Country of ref document: DE Owner name: LG ELECTRONICS INC., KR Free format text: FORMER OWNERS: LG ELECTRONICS INC., SEOUL, KR; SUZHOU LEKIN SEMICONDUCTOR CO. LTD., TAICANG, SUZHOU, CN
2023-05-31	PGFP	Annual fee paid to national office [announced via postgrant information from national office to epo]	Ref country code: DE Payment date: 20230220 Year of fee payment: 16
2023-10-31	PG25	Lapsed in a contracting state [announced via postgrant information from national office to epo]	Ref country code: GB Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20220808
2024-03-01	REG	Reference to a national code	Ref country code: DE Ref legal event code: R119 Ref document number: 602007049123 Country of ref document: DE
2024-04-03	REG	Reference to a national code	Ref country code: NL Ref legal event code: MM Effective date: 20230901
2024-05-21	PG25	Lapsed in a contracting state [announced via postgrant information from national office to epo]	Ref country code: NL Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20230901
2024-05-31	PG25	Lapsed in a contracting state [announced via postgrant information from national office to epo]	Ref country code: NL Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20230901
2024-07-31	PG25	Lapsed in a contracting state [announced via postgrant information from national office to epo]	Ref country code: FR Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20230831 Ref country code: DE Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20240301

Publication	Publication Date	Title
EP1876653A3 (de)	2013-05-01	Subträger zur Montage einer lichtemittierenden Vorrichtung und Paket für die lichtemittierende Vorrichtung
EP2637223A3 (de)	2013-11-20	Lichtemittierendes Halbleiterbauelement
EP1722425A3 (de)	2011-07-27	Lichtemittierende Vorrichtung und deren Herstellungsmethode und lichtemittierende Anzeige und deren Herstellungsmethode
EP2194587A3 (de)	2010-09-08	Lichtemittierende Vorrichtung und Verfahren zu ihrer Herstellung
EP2383805A3 (de)	2012-07-04	Gehäuse für lichtemittierende Vorrichtung und Beleuchtungssystem damit
EP2672531A3 (de)	2014-03-05	Gehäuse für eine lichtemittierende Vorrichtung und Verfahren zu seiner Herstellung
EP2028699A3 (de)	2014-08-06	Lichtemittierende Halbleitervorrichtung
EP1863105A3 (de)	2011-12-14	Lichtemittierendes Element, lichtemittierende Vorrichtung und elektronische Vorrichtung
EP2202821A3 (de)	2013-05-01	Organische lichtemittierende Vorrichtung und Verfahren zu ihrer Herstellung
EP1821346A3 (de)	2009-06-03	Lichtemittierendes Halbleiterbauelement und Verfahren zu seiner Herstellung
TW200629584A (en)	2006-08-16	Light emitting device and manufacture method thereof
EP2325905A3 (de)	2011-06-22	Dispositif électroluminescent semi-conducteur et son procédé de fabrication
EP1930250A3 (de)	2012-01-04	Barriereschicht, Verbundartikel damit, elektroaktive Vorrichtung und Verfahren dafür
EP2315271A3 (de)	2013-05-01	Lichtemittierende Vorrichtung, Gehäuse für lichtemittierende Vorrichtung und Beleuchtungssystem
EP2180532A3 (de)	2011-07-20	Lichtemittierendes Halbleiterbauelement
EP2187456A3 (de)	2014-02-26	Lichtemittierendes Halbleiterbauelement
EP2503607A3 (de)	2012-10-03	Lichtemittierende Vorrichtung und Verfahren zu ihrer Herstellung
EP1760800A3 (de)	2010-06-02	Lichtemittierendes Element und Verfahren zu dessen Herstellung
EP1914812A3 (de)	2009-10-14	Lichtemittierende Vorrichtung und Verfahren zu ihrer Herstellung
EP2453488A3 (de)	2014-06-11	Lichtemittierende Vorrichtungsverpackung und Verfahren zu ihrer Herstellung
EP1884998A3 (de)	2010-06-09	Organische lichtemittierende Vorrichtung und Verfahren zu ihrer Herstellung
EP1403908A3 (de)	2006-01-11	Organische elektrolumineszierende Lampe
EP2190039A3 (de)	2014-01-22	Lichtemittierendes Halbleiterbauelement
EP2365556A3 (de)	2013-02-27	Lichtemittierendes Element, lichtemittierende Vorrichtung, elektronische Vorrichtung und Beleuchtungsvorrichtung
EP2466658A3 (de)	2015-11-25	Leuchtdiode mit Leuchtstoffschicht, LED-Baugruppe und Verfahren zu deren Herstellung