EP2072464A4 - Procédé de purification du silicium, silicium et cellule solaire - Google Patents

Procédé de purification du silicium, silicium et cellule solaire

Info

Publication number
EP2072464A4
EP2072464A4 EP07828444A EP07828444A EP2072464A4 EP 2072464 A4 EP2072464 A4 EP 2072464A4 EP 07828444 A EP07828444 A EP 07828444A EP 07828444 A EP07828444 A EP 07828444A EP 2072464 A4 EP2072464 A4 EP 2072464A4
Authority
EP
European Patent Office
Prior art keywords
silicon
solar cell
purifying
purifying silicon
solar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP07828444A
Other languages
German (de)
English (en)
Other versions
EP2072464A1 (fr
Inventor
Motoyuki Yamada
Kazuhisa Hatayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Chemical Co Ltd
Original Assignee
Shin Etsu Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Chemical Co Ltd filed Critical Shin Etsu Chemical Co Ltd
Publication of EP2072464A1 publication Critical patent/EP2072464A1/fr
Publication of EP2072464A4 publication Critical patent/EP2072464A4/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/037—Purification
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
EP07828444A 2006-09-29 2007-09-26 Procédé de purification du silicium, silicium et cellule solaire Withdrawn EP2072464A4 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006268631 2006-09-29
PCT/JP2007/068698 WO2008035799A1 (fr) 2006-09-29 2007-09-26 Procédé de purification du silicium, silicium et cellule solaire

Publications (2)

Publication Number Publication Date
EP2072464A1 EP2072464A1 (fr) 2009-06-24
EP2072464A4 true EP2072464A4 (fr) 2010-09-01

Family

ID=39200620

Family Applications (1)

Application Number Title Priority Date Filing Date
EP07828444A Withdrawn EP2072464A4 (fr) 2006-09-29 2007-09-26 Procédé de purification du silicium, silicium et cellule solaire

Country Status (9)

Country Link
US (1) US20100202954A1 (fr)
EP (1) EP2072464A4 (fr)
JP (1) JP5210167B2 (fr)
KR (1) KR20090064591A (fr)
CN (1) CN101588992A (fr)
AU (1) AU2007298104A1 (fr)
CA (1) CA2667999A1 (fr)
NO (1) NO20091690L (fr)
WO (1) WO2008035799A1 (fr)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008036143A1 (de) 2008-08-01 2010-02-04 Berlinsolar Gmbh Verfahren zum Entfernen von nichtmetallischen Verunreinigungen aus metallurgischem Silicium
JP5359119B2 (ja) * 2008-08-26 2013-12-04 信越化学工業株式会社 高純度シリコンの製造方法
US8329133B2 (en) * 2008-11-03 2012-12-11 Gt Crystal Systems, Llc Method and apparatus for refining metallurgical grade silicon to produce solar grade silicon
WO2010119502A1 (fr) * 2009-04-14 2010-10-21 信越化学工業株式会社 Procédé de purification de silicium métallique
CA2763330A1 (fr) 2009-07-03 2011-01-06 Mitsubishi Chemical Corporation Procede de production de silicium, silicium et panneau pour une cellule solaire
DE102009056731A1 (de) 2009-12-04 2011-06-09 Rev Renewable Energy Ventures, Inc. Halogenierte Polysilane und Polygermane
WO2011079485A1 (fr) * 2009-12-31 2011-07-07 江苏中能硅业科技发展有限公司 Procédé de production et appareil de production de l'élément silicium
CN101941701B (zh) * 2010-09-20 2012-01-11 兰州蓝星有限公司 钢钎蘸试法判定金属硅精炼终点方法
DE102010053693A1 (de) * 2010-12-08 2012-06-14 Adensis Gmbh Verfahren zur chemischen Reinigung von metallurgischem Silizium und Vorrichtung zur Durchführung des Verfahrens
WO2012086544A1 (fr) * 2010-12-20 2012-06-28 三菱化学株式会社 Procédé de préparation de silicium et appareil de préparation, tranche de silicium, et panneau de cellules solaires
DE102011100884B4 (de) * 2011-05-08 2015-03-05 Centrotherm Photovoltaics Ag Verfahren und vorrichtung zum entfernen von verunreinigungen aus metallurgischem silizium
DE102011112662B4 (de) * 2011-05-08 2015-04-09 Centrotherm Photovoltaics Ag Verfahren zum Behandeln von metallurgischem Silizium
CN102642838B (zh) * 2012-04-28 2014-10-15 中国科学院福建物质结构研究所 采用火法冶金与湿法冶金连用技术提纯高纯硅材料的方法
CN104704149A (zh) 2012-05-31 2015-06-10 德克萨斯大学系统董事会 由熔融盐中的二氧化硅通过电沉积在金属上制备薄膜太阳能级硅
US9802827B2 (en) 2015-10-09 2017-10-31 Milwaukee Silicon, Llc Purified silicon, devices and systems for producing same
CN107043955A (zh) * 2017-01-09 2017-08-15 常州天合光能有限公司 一种活性气体辅助生长晶体硅的方法
US11181325B2 (en) * 2019-12-23 2021-11-23 Valgroup S.A. System for the production of molten salt used as a heat transfer medium for a pyrolysis system

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4837376A (en) * 1986-10-15 1989-06-06 Bayer Aktiengesellschaft Process for refining silicon and silicon purified thereby
JP2003238138A (ja) * 2002-02-20 2003-08-27 Sharp Corp シリコンの精製方法およびシリコンの精製装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2430917A1 (fr) 1978-07-11 1980-02-08 Comp Generale Electricite Procede et dispositif d'elaboration de silicium polycristallin
NO152551C (no) * 1983-02-07 1985-10-16 Elkem As Fremgangsmaate til fremstilling av rent silisium.
DE3727646A1 (de) * 1987-08-19 1989-03-02 Bayer Ag Verfahren zur kontinuierlichen raffination von silicium
JPH04193706A (ja) * 1990-11-28 1992-07-13 Kawasaki Steel Corp シリコンの精製方法
JPH05330815A (ja) 1992-05-27 1993-12-14 Kawasaki Steel Corp シリコンの精製方法
JPH10251010A (ja) * 1997-03-14 1998-09-22 Kawasaki Steel Corp 太陽電池用シリコン
JP2000302434A (ja) 1999-04-15 2000-10-31 Nippon Petrochem Co Ltd フッ化金属類を使用した四フッ化ケイ素の除去方法および回収方法
FR2827592B1 (fr) 2001-07-23 2003-08-22 Invensil Silicium metallurgique de haute purete et procede d'elaboration
JP2003277040A (ja) * 2002-03-19 2003-10-02 Sharp Corp シリコンの精製方法および該方法により精製したシリコンを用いて製造する太陽電池
JP4632769B2 (ja) 2004-12-09 2011-02-16 シャープ株式会社 シリコンの精製方法
JP4880236B2 (ja) * 2005-03-07 2012-02-22 新日鉄マテリアルズ株式会社 高純度シリコンの製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4837376A (en) * 1986-10-15 1989-06-06 Bayer Aktiengesellschaft Process for refining silicon and silicon purified thereby
JP2003238138A (ja) * 2002-02-20 2003-08-27 Sharp Corp シリコンの精製方法およびシリコンの精製装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2008035799A1 *

Also Published As

Publication number Publication date
EP2072464A1 (fr) 2009-06-24
NO20091690L (no) 2009-06-19
WO2008035799A1 (fr) 2008-03-27
AU2007298104A1 (en) 2008-03-27
CN101588992A (zh) 2009-11-25
JPWO2008035799A1 (ja) 2010-01-28
JP5210167B2 (ja) 2013-06-12
CA2667999A1 (fr) 2008-03-27
KR20090064591A (ko) 2009-06-19
US20100202954A1 (en) 2010-08-12

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