EP2175342B1 - Kreis zur Erzeugung eines Steuerstroms - Google Patents

Kreis zur Erzeugung eines Steuerstroms Download PDF

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Publication number
EP2175342B1
EP2175342B1 EP08166350.2A EP08166350A EP2175342B1 EP 2175342 B1 EP2175342 B1 EP 2175342B1 EP 08166350 A EP08166350 A EP 08166350A EP 2175342 B1 EP2175342 B1 EP 2175342B1
Authority
EP
European Patent Office
Prior art keywords
transistor
current
circuit
emitter
collector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
EP08166350.2A
Other languages
English (en)
French (fr)
Other versions
EP2175342A1 (de
Inventor
Erwin Spits
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SnapTrack Inc
Original Assignee
SnapTrack Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SnapTrack Inc filed Critical SnapTrack Inc
Priority to EP08166350.2A priority Critical patent/EP2175342B1/de
Priority to PCT/EP2009/063212 priority patent/WO2010040841A2/en
Priority to JP2011530503A priority patent/JP5547202B2/ja
Publication of EP2175342A1 publication Critical patent/EP2175342A1/de
Priority to US13/040,733 priority patent/US8258858B2/en
Application granted granted Critical
Publication of EP2175342B1 publication Critical patent/EP2175342B1/de
Ceased legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/22—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only
    • G05F3/222—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/227—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage producing a current or voltage as a predetermined function of the supply voltage

Definitions

  • This invention is concerned with an electronic circuit for generating a control current that is independent of voltage variations.
  • a stable voltage may be generated externally and supplied to the bias circuit, which is applied in an amplifier component, for example. Such an external voltage supply is common use in industrial applications.
  • Existing concepts are discussed in the paper 2001 IEEE MTT-S, "Bias circuits for GaAs HBT power amplifiers", Esko, Jarvinen, pages 507-510 .
  • US-A-5793194 describes bias networks for producing a predetermined bias current for another circuit.
  • the bias networks include compensation sub-circuits which provide compensation for process variations in the transistors in the networks. Circuit implementations which allow for power supply voltage variations are also provided.
  • JP-A-2008172538 describes a bias circuit comprising a stabilisation of the output current with respect to deviations of the supply voltage.
  • the bias current is applied to the base terminal of a transistor provided as amplifier.
  • a correction current is bled by means of a further transistor, which is arranged in series between resistances.
  • JP-A-2008154043 describes a bias circuit comprising a stabilisation of the bias current with respect to deviations that are due to varying environmental temperatures.
  • the supply voltage is controlled according to the temperature in order to keep the current in the saturation region of an applied transistor.
  • the circuit generates a control current or reference current that is independent of voltage variations.
  • the current can especially be provided to be fed into an amplifier bias circuit.
  • the control current is generated by a drop of a supply voltage across a resistor, which is split in two parts to form a voltage divider. Between the parts, a sink current line branches off from the control current line, so that it is possible to sink away current via the sink current line. The remaining current on the control current line can be controlled so as to be maintained at a specified value.
  • a reference circuit is provided to generate a correction current and uses base-emitter voltages of preferably two small reference transistors.
  • the reference serves to control a transistor, which sinks current in relation to variations of the supply voltage in order to keep the actual control current that is output from the circuit unchanged.
  • FIG. 1 shows a circuit diagram of a preferred embodiment.
  • the circuit shown in the diagram of the figure comprises a circuit A for the generation of the control current and, for the purpose of illustration only, an example of a standard bias circuit B.
  • the control current I Ccontrol is fed into the bias circuit B from the supply voltage V supply via a control current line j.
  • the control current line j comprises two resistors a and b, which are arranged in series and form a voltage divider.
  • a sink current line k branches off from the control current line j between the resistors a, b.
  • the sink current line k is provided for a correction current I sink , by which the total current I total through the resistor a is reduced to the control current I control through the resistor b.
  • the correction current I sink is controlled in such a way that the control current I control is maintained on the preset value.
  • the circuit A is provided, comprising a current sink transistor e and at least one reference transistor c, d.
  • each reference transistor c, d is provided, both having their base and collector connected, so that each reference transistor c, d operates like a diode.
  • the reference transistors c, d are arranged in series, and the collector of the first reference transistor c is connected between the resistors h and i, which form a further voltage divider.
  • the emitter of the second reference transistor d is connected to ground.
  • the collector of the first reference transistor c is connected to the base of a transistor e, the current sink transistor, which is provided to generate the correction current I sink .
  • the collector of the current sink transistor e is therefore connected to the sink current line k, and the emitter of the current sink transistor e is connected to ground via the resistor g.
  • the circuit A thus controls the value of the control current Icontrol, which is fed into the bias circuit B or into any other circuit using a stable current.
  • the bias circuit B comprises three transistors. The bases of a first and a second one of these transistors 1, m are connected to one another, to the control current line j and to the collector of the third transistor o. The collectors of the first and second transistors 1, m are connected to the supply voltage. The emitter of the first transistor 1 is connected to ground via a further resistor n and to the base of the third transistor o. The emitter of the third transistor o is connected to ground, and the emitter of the second transistor m supplies a bias current f.
  • the bias circuit B can be substituted with any other circuit that makes use of a control current or reference current. This is indicated in the figure by the rectangular frame of broken lines enclosing part B of the circuitry.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Control Of Electrical Variables (AREA)
  • Amplifiers (AREA)

Claims (3)

  1. Schaltung zum Generieren eines Steuerstroms, der unabhängig ist von Spannungsvariationen, aufweisend:
    eine Versorgungsspannung (Vsupply),
    eine Steuerstromleitung (j) aufweisend zwei Widerstände (a, b),
    eine Senkenstromleitung (k), welche von der Steuerstromleitung zwischen den Widerständen abzweigt, und
    einen Stromsenkentransistor (e) mit einer Basis, einem Emitter und einem Kollektor, wobei der Kollektor mit der Senkenstromleitung verbunden ist und der Emitter mit Masse verbunden ist über einen ersten weiteren Widerstand (g),
    gekennzeichnet dadurch, dass
    die Schaltung weiterhin wenigstens einen Referenztransistor (c) aufweist, welcher eine Basis, einen Emitter und einen Kollektor aufweist, wobei der Kollektor des Referenztransistors mit der Basis, sowie mit der Versorgungsspannung über einen zweiten weiteren Widerstand (h) und mit der Basis des Stromsenkentransistors verbunden ist, wobei der Emitter des Referenztransistors mit Masse oder einem weiteren Referenztransistor (d) verbunden ist, welcher eine Basis, einen Emitter und einen Kollektor aufweist, wobei der Kollektor des weiteren Referenztransistors mit dem Emitter des Referenztransistors (c) und mit der Basis des weiteren Referenztransistors (d) verbunden ist und wobei der Emitter des weiteren Referenztransistors mit Masse verbunden ist, und
    die Basis des Stromsenkentransistors (e) und der Kollektor des Referenztransistors (c) mit Masse über einen dritten weiteren Widerstand (i) verbunden sind.
  2. Schaltung nach Anspruch 1, weiterhin aufweisend:
    eine Bias-Schaltung (B), die auf einem Referenzstrom (Icontrol) basiert, wobei die Bias-Schaltung mit der Versorgungsspannung (Vsupply) und mit der Steuerstromleitung (j) verbunden ist.
  3. Schaltung nach Anspruch 2, weiterhin aufweisend:
    drei Transistoren (l, m, o) der Bias-Schaltung (B), wobei jeder eine Basis, einen Emitter und einen Kollektor aufweist,
    die Basen eines ersten und eines zweiten der Transistoren (l, m) sind miteinander, sowie mit der Steuerstromleitung (j) und mit dem Kollektor des dritten Transistors (o) der Bias-Schaltung verbunden,
    die Kollektoren der ersten und zweiten Transistoren (l, m) sind mit der Versorgungsspannung (Vsupply) verbunden,
    der Emitter des ersten Transistors (l) ist mit Masse über einen vierten weiteren Widerstand (m) und mit der Basis des dritten Transistors (o) verbunden,
    der Emitter des dritten Transistors ist mit Masse verbunden, und
    der Emitter des zweiten Transistors (m) liefert einen Bias-Strom (f).
EP08166350.2A 2008-10-10 2008-10-10 Kreis zur Erzeugung eines Steuerstroms Ceased EP2175342B1 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP08166350.2A EP2175342B1 (de) 2008-10-10 2008-10-10 Kreis zur Erzeugung eines Steuerstroms
PCT/EP2009/063212 WO2010040841A2 (en) 2008-10-10 2009-10-09 Circuit for generating a control current
JP2011530503A JP5547202B2 (ja) 2008-10-10 2009-10-09 制御電流生成回路
US13/040,733 US8258858B2 (en) 2008-10-10 2011-03-04 Circuit for generating a control current

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP08166350.2A EP2175342B1 (de) 2008-10-10 2008-10-10 Kreis zur Erzeugung eines Steuerstroms

Publications (2)

Publication Number Publication Date
EP2175342A1 EP2175342A1 (de) 2010-04-14
EP2175342B1 true EP2175342B1 (de) 2017-05-03

Family

ID=40193825

Family Applications (1)

Application Number Title Priority Date Filing Date
EP08166350.2A Ceased EP2175342B1 (de) 2008-10-10 2008-10-10 Kreis zur Erzeugung eines Steuerstroms

Country Status (4)

Country Link
US (1) US8258858B2 (de)
EP (1) EP2175342B1 (de)
JP (1) JP5547202B2 (de)
WO (1) WO2010040841A2 (de)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4525663A (en) * 1982-08-03 1985-06-25 Burr-Brown Corporation Precision band-gap voltage reference circuit
US5304918A (en) * 1992-01-22 1994-04-19 Samsung Semiconductor, Inc. Reference circuit for high speed integrated circuits
US5793194A (en) * 1996-11-06 1998-08-11 Raytheon Company Bias circuit having process variation compensation and power supply variation compensation
JP2008154043A (ja) * 2006-12-19 2008-07-03 Sharp Corp バイアス回路、能動素子回路、および、電力増幅器
JP2008172538A (ja) * 2007-01-11 2008-07-24 Sharp Corp バイアス回路および電力増幅器

Also Published As

Publication number Publication date
JP5547202B2 (ja) 2014-07-09
US8258858B2 (en) 2012-09-04
WO2010040841A3 (en) 2010-06-24
EP2175342A1 (de) 2010-04-14
JP2012505454A (ja) 2012-03-01
WO2010040841A2 (en) 2010-04-15
US20110210714A1 (en) 2011-09-01

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