EP2248155A4 - Recuit par lumiere flash pour films minces - Google Patents

Recuit par lumiere flash pour films minces

Info

Publication number
EP2248155A4
EP2248155A4 EP09717986A EP09717986A EP2248155A4 EP 2248155 A4 EP2248155 A4 EP 2248155A4 EP 09717986 A EP09717986 A EP 09717986A EP 09717986 A EP09717986 A EP 09717986A EP 2248155 A4 EP2248155 A4 EP 2248155A4
Authority
EP
European Patent Office
Prior art keywords
recognized
thin films
flash light
flash
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP09717986A
Other languages
German (de)
English (en)
Other versions
EP2248155A2 (fr
Inventor
James S Im
Der Wilt Paul C Van
Ui-Jin Chung
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Columbia University in the City of New York
Original Assignee
Columbia University in the City of New York
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Columbia University in the City of New York filed Critical Columbia University in the City of New York
Publication of EP2248155A2 publication Critical patent/EP2248155A2/fr
Publication of EP2248155A4 publication Critical patent/EP2248155A4/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/131—Recrystallisation; Crystallization of amorphous or microcrystalline semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/166—Amorphous semiconductors
    • H10F77/1662—Amorphous semiconductors including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1692—Thin semiconductor films on metallic or insulating substrates the films including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2923—Materials being conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3466—Crystal orientation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/3816—Pulsed laser beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H10P34/422—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing using incoherent radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
EP09717986A 2008-02-29 2009-02-27 Recuit par lumiere flash pour films minces Withdrawn EP2248155A4 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US3278108P 2008-02-29 2008-02-29
US11151808P 2008-11-05 2008-11-05
PCT/US2009/035537 WO2009111326A2 (fr) 2008-02-29 2009-02-27 Recuit par lumière flash pour films minces

Publications (2)

Publication Number Publication Date
EP2248155A2 EP2248155A2 (fr) 2010-11-10
EP2248155A4 true EP2248155A4 (fr) 2011-10-05

Family

ID=41056568

Family Applications (1)

Application Number Title Priority Date Filing Date
EP09717986A Withdrawn EP2248155A4 (fr) 2008-02-29 2009-02-27 Recuit par lumiere flash pour films minces

Country Status (7)

Country Link
US (1) US20110108108A1 (fr)
EP (1) EP2248155A4 (fr)
JP (1) JP2011515833A (fr)
KR (1) KR101413370B1 (fr)
CN (1) CN101971293B (fr)
TW (1) TW200947523A (fr)
WO (1) WO2009111326A2 (fr)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009518864A (ja) * 2005-12-05 2009-05-07 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 膜を加工するためのシステム及び方法並びに薄膜
US10000965B2 (en) 2010-01-16 2018-06-19 Cardinal Cg Company Insulating glass unit transparent conductive coating technology
US10060180B2 (en) 2010-01-16 2018-08-28 Cardinal Cg Company Flash-treated indium tin oxide coatings, production methods, and insulating glass unit transparent conductive coating technology
US10000411B2 (en) 2010-01-16 2018-06-19 Cardinal Cg Company Insulating glass unit transparent conductivity and low emissivity coating technology
KR20130011933A (ko) * 2011-07-20 2013-01-30 울트라테크 인크. ＧａＮ ＬＥＤ 및 이것의 고속 어닐링 방법
WO2013018194A1 (fr) * 2011-08-02 2013-02-07 三菱電機株式会社 Procédé de fabrication de cellule solaire et système de fabrication de cellule solaire
WO2013017993A2 (fr) * 2011-08-04 2013-02-07 Kla-Tencor Corporation Procédé et appareil pour estimer le rendement d'une cellule solaire
CN102375171B (zh) * 2011-11-09 2013-10-02 中国科学院物理研究所 一种衍射光学元件及其设计方法和在太阳能电池中的应用
US9493357B2 (en) 2011-11-28 2016-11-15 Sino-American Silicon Products Inc. Method of fabricating crystalline silicon ingot including nucleation promotion layer
JP5887214B2 (ja) * 2012-05-31 2016-03-16 積水化学工業株式会社 光電変換層の製造方法
CN103839854A (zh) * 2012-11-23 2014-06-04 北京北方微电子基地设备工艺研究中心有限责任公司 半导体加工设备及其去气腔室和加热组件
CN104900517B (zh) 2014-03-04 2018-02-27 斯克林集团公司 热处理方法及热处理装置
JP6373738B2 (ja) * 2014-03-04 2018-08-15 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法および熱処理装置
CN104766784A (zh) * 2014-06-30 2015-07-08 常州英诺能源技术有限公司 柔性石墨纸衬底沉积制备柔性多晶硅薄膜的方法
DE102016001949B4 (de) * 2016-02-15 2020-10-15 Helmholtz-Zentrum Dresden-Rossendorf E. V. Verfahren zur Herstellung von auf Silizium basierenden Anoden für Sekundärbatterien
KR102532225B1 (ko) * 2016-09-13 2023-05-12 삼성디스플레이 주식회사 결정화 방법 및 결정화 장치
WO2018137735A1 (fr) * 2017-01-26 2018-08-02 Gross, Leander Kilian Procédé et dispositif pour séparer des couches de matériau différentes d'un élément composite
US11028012B2 (en) 2018-10-31 2021-06-08 Cardinal Cg Company Low solar heat gain coatings, laminated glass assemblies, and methods of producing same
CN114335243B (zh) * 2021-12-23 2023-07-28 横店集团东磁股份有限公司 一种perc电池的退火方法和退火装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7183229B2 (en) * 2000-12-08 2007-02-27 Sony Corporation Semiconductor thin film forming method, production methods for semiconductor device and electrooptical device, devices used for these methods, and semiconductor device and electrooptical device
US20070054477A1 (en) * 2005-08-19 2007-03-08 Dong-Byum Kim Method of forming polycrystalline silicon thin film and method of manufacturing thin film transistor using the method
US20070051302A1 (en) * 2002-08-22 2007-03-08 Gosain Dharam P Method of producing crystalline semiconductor material and method of fabricating semiconductor device
US7192818B1 (en) * 2005-09-22 2007-03-20 National Taiwan University Polysilicon thin film fabrication method

Family Cites Families (108)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2030468A5 (fr) * 1969-01-29 1970-11-13 Thomson Brandt Csf
US4309225A (en) * 1979-09-13 1982-01-05 Massachusetts Institute Of Technology Method of crystallizing amorphous material with a moving energy beam
EP0191505A3 (fr) * 1980-04-10 1986-09-10 Massachusetts Institute Of Technology Méthode de fabrication de feuilles en matériau cristallin
US4382658A (en) * 1980-11-24 1983-05-10 Hughes Aircraft Company Use of polysilicon for smoothing of liquid crystal MOS displays
US4639277A (en) * 1984-07-02 1987-01-27 Eastman Kodak Company Semiconductor material on a substrate, said substrate comprising, in order, a layer of organic polymer, a layer of metal or metal alloy and a layer of dielectric material
JPS62293740A (ja) * 1986-06-13 1987-12-21 Fujitsu Ltd 半導体装置の製造方法
US5204659A (en) * 1987-11-13 1993-04-20 Honeywell Inc. Apparatus and method for providing a gray scale in liquid crystal flat panel displays
KR920010885A (ko) * 1990-11-30 1992-06-27 카나이 쯔또무 박막반도체와 그 제조방법 및 제조장치 및 화상처리장치
CA2061796C (fr) * 1991-03-28 2002-12-24 Kalluri R. Sarma Excitateurs integres a grande mobilite electronique pour afficheurs matriciels actifs
JP3213338B2 (ja) * 1991-05-15 2001-10-02 株式会社リコー 薄膜半導体装置の製法
JPH0548171A (ja) * 1991-08-21 1993-02-26 Seiko Epson Corp マトリクストランスデユーサ
US5424244A (en) * 1992-03-26 1995-06-13 Semiconductor Energy Laboratory Co., Ltd. Process for laser processing and apparatus for use in the same
US5285236A (en) * 1992-09-30 1994-02-08 Kanti Jain Large-area, high-throughput, high-resolution projection imaging system
US5291240A (en) * 1992-10-27 1994-03-01 Anvik Corporation Nonlinearity-compensated large-area patterning system
JPH076960A (ja) * 1993-06-16 1995-01-10 Fuji Electric Co Ltd 多結晶半導体薄膜の生成方法
US5395481A (en) * 1993-10-18 1995-03-07 Regents Of The University Of California Method for forming silicon on a glass substrate
JP2646977B2 (ja) * 1993-11-29 1997-08-27 日本電気株式会社 順スタガ型薄膜トランジスタの製造方法
US5496768A (en) * 1993-12-03 1996-03-05 Casio Computer Co., Ltd. Method of manufacturing polycrystalline silicon thin film
JPH07249591A (ja) * 1994-03-14 1995-09-26 Matsushita Electric Ind Co Ltd 半導体薄膜のレーザーアニール方法及び薄膜半導体素子
JP3072005B2 (ja) * 1994-08-25 2000-07-31 シャープ株式会社 半導体装置及びその製造方法
US5742426A (en) * 1995-05-25 1998-04-21 York; Kenneth K. Laser beam treatment pattern smoothing device and laser beam treatment pattern modulator
TW297138B (fr) * 1995-05-31 1997-02-01 Handotai Energy Kenkyusho Kk
US6524977B1 (en) * 1995-07-25 2003-02-25 Semiconductor Energy Laboratory Co., Ltd. Method of laser annealing using linear beam having quasi-trapezoidal energy profile for increased depth of focus
US5721606A (en) * 1995-09-07 1998-02-24 Jain; Kanti Large-area, high-throughput, high-resolution, scan-and-repeat, projection patterning system employing sub-full mask
AP9801217A0 (en) * 1995-09-29 1998-03-31 Sage Tech Incorporated Optical digital media recording and reproduction system.
US5858807A (en) * 1996-01-17 1999-01-12 Kabushiki Kaisha Toshiba Method of manufacturing liquid crystal display device
DE19707834A1 (de) * 1996-04-09 1997-10-16 Zeiss Carl Fa Materialbestrahlungsgerät und Verfahren zum Betrieb von Materialbestrahlungsgeräten
US5997642A (en) * 1996-05-21 1999-12-07 Symetrix Corporation Method and apparatus for misted deposition of integrated circuit quality thin films
US6555449B1 (en) * 1996-05-28 2003-04-29 Trustees Of Columbia University In The City Of New York Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidfication
JP4098377B2 (ja) * 1996-09-30 2008-06-11 株式会社東芝 多結晶半導体膜の製造方法
JP3917698B2 (ja) * 1996-12-12 2007-05-23 株式会社半導体エネルギー研究所 レーザーアニール方法およびレーザーアニール装置
US5861991A (en) * 1996-12-19 1999-01-19 Xerox Corporation Laser beam conditioner using partially reflective mirrors
US6020244A (en) * 1996-12-30 2000-02-01 Intel Corporation Channel dopant implantation with automatic compensation for variations in critical dimension
JP4056577B2 (ja) * 1997-02-28 2008-03-05 株式会社半導体エネルギー研究所 レーザー照射方法
JP3503427B2 (ja) * 1997-06-19 2004-03-08 ソニー株式会社 薄膜トランジスタの製造方法
US6014944A (en) * 1997-09-19 2000-01-18 The United States Of America As Represented By The Secretary Of The Navy Apparatus for improving crystalline thin films with a contoured beam pulsed laser
JP3462053B2 (ja) * 1997-09-30 2003-11-05 株式会社半導体エネルギー研究所 ビームホモジェナイザーおよびレーザー照射装置およびレーザー照射方法および半導体デバイス
WO1999031719A1 (fr) * 1997-12-17 1999-06-24 Matsushita Electric Industrial Co., Ltd. Couche mince de semi-conducteur, son procede et son dispositif de fabrication, composant a semi-conducteur et son procede de fabrication
JPH11186189A (ja) * 1997-12-17 1999-07-09 Semiconductor Energy Lab Co Ltd レーザー照射装置
KR100284708B1 (ko) * 1998-01-24 2001-04-02 구본준, 론 위라하디락사 실리콘박막을결정화하는방법
US6504175B1 (en) * 1998-04-28 2003-01-07 Xerox Corporation Hybrid polycrystalline and amorphous silicon structures on a shared substrate
JP2000066133A (ja) * 1998-06-08 2000-03-03 Sanyo Electric Co Ltd レ―ザ―光照射装置
KR100292048B1 (ko) * 1998-06-09 2001-07-12 구본준, 론 위라하디락사 박막트랜지스터액정표시장치의제조방법
JP2000010058A (ja) * 1998-06-18 2000-01-14 Hamamatsu Photonics Kk 空間光変調装置
US6555422B1 (en) * 1998-07-07 2003-04-29 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and method of manufacturing the same
JP3156776B2 (ja) * 1998-08-03 2001-04-16 日本電気株式会社 レーザ照射方法
JP2000068515A (ja) * 1998-08-20 2000-03-03 Sony Corp 薄膜半導体装置の製造方法
GB9819338D0 (en) * 1998-09-04 1998-10-28 Philips Electronics Nv Laser crystallisation of thin films
TW457553B (en) * 1999-01-08 2001-10-01 Sony Corp Process for producing thin film semiconductor device and laser irradiation apparatus
US6203952B1 (en) * 1999-01-14 2001-03-20 3M Innovative Properties Company Imaged article on polymeric substrate
TW444247B (en) * 1999-01-29 2001-07-01 Toshiba Corp Laser beam irradiating device, manufacture of non-single crystal semiconductor film, and manufacture of liquid crystal display device
US6535535B1 (en) * 1999-02-12 2003-03-18 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method, laser irradiation apparatus, and semiconductor device
US6190985B1 (en) * 1999-08-17 2001-02-20 Advanced Micro Devices, Inc. Practical way to remove heat from SOI devices
US6368945B1 (en) * 2000-03-16 2002-04-09 The Trustees Of Columbia University In The City Of New York Method and system for providing a continuous motion sequential lateral solidification
US6830993B1 (en) * 2000-03-21 2004-12-14 The Trustees Of Columbia University In The City Of New York Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method
US6531681B1 (en) * 2000-03-27 2003-03-11 Ultratech Stepper, Inc. Apparatus having line source of radiant energy for exposing a substrate
JP4588167B2 (ja) * 2000-05-12 2010-11-24 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6521492B2 (en) * 2000-06-12 2003-02-18 Seiko Epson Corporation Thin-film semiconductor device fabrication method
WO2002031869A2 (fr) * 2000-10-10 2002-04-18 The Trustees Of Columbia University In The City Of New York Procede et appareil destines au traitement d'une couche metallique mince
WO2002042847A1 (fr) * 2000-11-27 2002-05-30 The Trustees Of Columbia University In The City Of New York Systeme de traitement et de projection a masque permettant la cristallisation par laser de secteurs de couches de semiconducteur sur un substrat
JP4092541B2 (ja) * 2000-12-08 2008-05-28 ソニー株式会社 半導体薄膜の形成方法及び半導体装置の製造方法
JP2004516669A (ja) * 2000-12-21 2004-06-03 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 薄膜フィルムトランジスタ
EP1354341A1 (fr) * 2001-04-19 2003-10-22 The Trustees Of Columbia University In The City Of New York Procede et systeme permettant d'obtenir une solidification laterale sequentielle en mouvement continu par balayage unique
SG108262A1 (en) * 2001-07-06 2005-01-28 Inst Data Storage Method and apparatus for cutting a multi-layer substrate by dual laser irradiation
KR100662494B1 (ko) * 2001-07-10 2007-01-02 엘지.필립스 엘시디 주식회사 비정질막 결정화방법 및 이를 이용한 액정표시소자의제조방법
US7160763B2 (en) * 2001-08-27 2007-01-09 The Trustees Of Columbia University In The City Of New York Polycrystalline TFT uniformity through microstructure mis-alignment
TW582062B (en) * 2001-09-14 2004-04-01 Sony Corp Laser irradiation apparatus and method of treating semiconductor thin film
JP3903761B2 (ja) * 2001-10-10 2007-04-11 株式会社日立製作所 レ−ザアニ−ル方法およびレ−ザアニ−ル装置
US6526585B1 (en) * 2001-12-21 2003-03-04 Elton E. Hill Wet smoke mask
JP4008716B2 (ja) * 2002-02-06 2007-11-14 シャープ株式会社 フラットパネル表示装置およびその製造方法
US7192479B2 (en) * 2002-04-17 2007-03-20 Sharp Laboratories Of America, Inc. Laser annealing mask and method for smoothing an annealed surface
US6984573B2 (en) * 2002-06-14 2006-01-10 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method and apparatus
AU2003258289A1 (en) * 2002-08-19 2004-03-03 The Trustees Of Columbia University In The City Of New York A single-shot semiconductor processing system and method having various irradiation patterns
US7622370B2 (en) * 2002-08-19 2009-11-24 The Trustees Of Columbia University In The City Of New York Process and system for laser crystallization processing of film regions on a substrate to minimize edge areas, and a structure of such film regions
KR101058464B1 (ko) * 2002-08-19 2011-08-24 더 트러스티스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 기판상의 필름영역과 그 에지영역에서의 실질적인 균일성을제공하기 위한 필름영역의 레이저 결정 가공을 위한 방법과 시스템 및 그 필름영역을 가진 구조물
JP4474108B2 (ja) * 2002-09-02 2010-06-02 株式会社 日立ディスプレイズ 表示装置とその製造方法および製造装置
JP4627961B2 (ja) * 2002-09-20 2011-02-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2004134440A (ja) * 2002-10-08 2004-04-30 Okutekku:Kk シリコン膜の形態学的変化法
JP2004134523A (ja) * 2002-10-09 2004-04-30 Sharp Corp 半導体装置の製造方法および半導体装置
US7235466B2 (en) * 2002-10-31 2007-06-26 Au Optronics Corporation Method of fabricating a polysilicon layer
JP2004335839A (ja) * 2003-05-09 2004-11-25 Nec Corp 半導体薄膜、薄膜トランジスタ、それらの製造方法および半導体薄膜の製造装置
JP4470395B2 (ja) * 2003-05-30 2010-06-02 日本電気株式会社 半導体薄膜の製造方法及び製造装置、並びに薄膜トランジスタ
JP4015068B2 (ja) * 2003-06-17 2007-11-28 株式会社東芝 半導体装置の製造方法
WO2005029547A2 (fr) * 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Systeme et procede permettant d'augmenter la largeur de grains polycristallins produits par solidification laterale sequentielle, en utilisant un motif de masquage modifie
WO2005029548A2 (fr) * 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Systeme et procede de solidification laterale sequentielle a faisceau multiple
US7364952B2 (en) * 2003-09-16 2008-04-29 The Trustees Of Columbia University In The City Of New York Systems and methods for processing thin films
WO2005029549A2 (fr) * 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Procede et systeme de solidification laterale sequentielle par balayage unique et mouvement continu permettant une croissance bidirectionnelle des grains, et masque permettant cette croissance
TWI359441B (en) * 2003-09-16 2012-03-01 Univ Columbia Processes and systems for laser crystallization pr
WO2005029550A2 (fr) * 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Procede et systeme de formation de films minces cristallins a orientation uniforme des cristaux
US7164152B2 (en) * 2003-09-16 2007-01-16 The Trustees Of Columbia University In The City Of New York Laser-irradiated thin films having variable thickness
WO2005029546A2 (fr) * 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Procede et systeme de solidification laterale sequentielle en mouvement continu en vue de reduire ou d'eliminer les artefacts, et masque facilitant une telle reduction/elimination des artefacts
US7318866B2 (en) * 2003-09-16 2008-01-15 The Trustees Of Columbia University In The City Of New York Systems and methods for inducing crystallization of thin films using multiple optical paths
KR100971951B1 (ko) * 2003-09-17 2010-07-23 엘지디스플레이 주식회사 엑시머 레이저를 이용한 비정질 실리콘 박막 결정화 방법
JP2004111992A (ja) * 2003-11-25 2004-04-08 Seiko Epson Corp 半導体膜の結晶化方法、およびアクティブマトリクス基板
US7199397B2 (en) * 2004-05-05 2007-04-03 Au Optronics Corporation AMOLED circuit layout
JP2006066902A (ja) * 2004-07-28 2006-03-09 Advanced Lcd Technologies Development Center Co Ltd 半導体装置の製造方法
KR100689315B1 (ko) * 2004-08-10 2007-03-08 엘지.필립스 엘시디 주식회사 실리콘 박막 결정화 장치 및 이를 이용한 결정화 방법
CN101111925A (zh) * 2004-11-18 2008-01-23 纽约市哥伦比亚大学理事会 用于产生结晶方向受控的多晶硅膜的系统和方法
KR101212378B1 (ko) * 2004-11-18 2012-12-13 더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 결정 방위 제어형 폴리실리콘막을 생성하기 위한 장치 및 방법
US7645337B2 (en) * 2004-11-18 2010-01-12 The Trustees Of Columbia University In The City Of New York Systems and methods for creating crystallographic-orientation controlled poly-silicon films
US8221544B2 (en) * 2005-04-06 2012-07-17 The Trustees Of Columbia University In The City Of New York Line scan sequential lateral solidification of thin films
US7629572B2 (en) * 2005-10-28 2009-12-08 Carl Zeiss Laser Optics Gmbh Optical devices and related systems and methods
JP2007149803A (ja) * 2005-11-25 2007-06-14 Seiko Epson Corp アクティブマトリクス基板の製造方法、アクティブマトリクス基板、電気光学装置及び電子機器
JP2009518864A (ja) * 2005-12-05 2009-05-07 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 膜を加工するためのシステム及び方法並びに薄膜
KR20070094527A (ko) * 2006-03-17 2007-09-20 가부시키가이샤 에키쇼센탄 기쥬쓰 가이하쓰센타 결정화방법, 박막트랜지스터의 제조방법, 박막 트랜지스터,표시장치, 반도체장치
JP2007317991A (ja) * 2006-05-29 2007-12-06 Advanced Lcd Technologies Development Center Co Ltd 半導体装置の製造方法並びに薄膜トランジスタ
KR100837271B1 (ko) * 2006-08-10 2008-06-12 삼성전자주식회사 반도체 장치 및 그 제조방법
CN101622722B (zh) * 2007-02-27 2012-11-21 卡尔蔡司激光器材有限责任公司 连续涂覆设备、生产晶态薄膜和太阳电池的方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7183229B2 (en) * 2000-12-08 2007-02-27 Sony Corporation Semiconductor thin film forming method, production methods for semiconductor device and electrooptical device, devices used for these methods, and semiconductor device and electrooptical device
US20070051302A1 (en) * 2002-08-22 2007-03-08 Gosain Dharam P Method of producing crystalline semiconductor material and method of fabricating semiconductor device
US20070054477A1 (en) * 2005-08-19 2007-03-08 Dong-Byum Kim Method of forming polycrystalline silicon thin film and method of manufacturing thin film transistor using the method
US7192818B1 (en) * 2005-09-22 2007-03-20 National Taiwan University Polysilicon thin film fabrication method

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
See also references of WO2009111326A2 *
VAN DER WILT P C; TURK B A; LIMANOV A B; CHITU A M; IM J S: "A hybrid approach for obtaining orientation-controlled single-crystal Si regions on glass substrates", PROCEEDINGS OF THE SPIE - THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING, vol. 6106, 9 February 2006 (2006-02-09), pages 61060B-1 - 61060B-15, XP009151485 *

Also Published As

Publication number Publication date
KR20100136450A (ko) 2010-12-28
TW200947523A (en) 2009-11-16
WO2009111326A3 (fr) 2010-01-07
US20110108108A1 (en) 2011-05-12
WO2009111326A2 (fr) 2009-09-11
JP2011515833A (ja) 2011-05-19
CN101971293A (zh) 2011-02-09
KR101413370B1 (ko) 2014-06-30
CN101971293B (zh) 2014-04-16
EP2248155A2 (fr) 2010-11-10

Similar Documents

Publication Publication Date Title
EP2248155A4 (fr) Recuit par lumiere flash pour films minces
EP2641011A4 (fr) Lampe réglable pour la photographie sous-marine
EP2415836A4 (fr) Composition pour film étirable
EP2376105A4 (fr) Nkg2d-fc pour immunothérapie
EP2201751A4 (fr) Monture multiple pour caméra
DK2651357T3 (da) Sublinguale film
EP2315063A4 (fr) Caméra
EP2303572A4 (fr) Film multicouche
EP2341897A4 (fr) Nanoparticules pour immunothérapie
HRP20181851T1 (hr) Višeslojna folija
EP2475309A4 (fr) Patch pour hernie
BRPI1006890A2 (pt) filmes transparentes
EP2180354A4 (fr) Film anti-reflet
FIU20090400U0 (fi) Ohutkalvo jätteenpakkauskasetteja varten
EP2594405A4 (fr) Film pour marquage au laser
DK2473342T3 (da) Forstærket tyndfilm til fleksibel emballering
EP2253466A4 (fr) Film de démoulage
EP2289996A4 (fr) Film de fluorésine
FR2965272B1 (fr) Nouveaux auto-adhesifs thermofusibles extrudables pour films multicouches
EP2629680A4 (fr) Clamp pour plaie
HUE057448T2 (hu) Vékonyréteg fényelektromos eszköz
EP2347741A4 (fr) Pansement film
EP2611610A4 (fr) Film multicouche
EP2253465A4 (fr) Film stratifié
IT1393530B1 (it) Lente polarizzante

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20100803

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK TR

AX Request for extension of the european patent

Extension state: AL BA RS

DAX Request for extension of the european patent (deleted)
A4 Supplementary search report drawn up and despatched

Effective date: 20110902

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 21/67 20060101ALI20110829BHEP

Ipc: H01L 31/18 20060101ALI20110829BHEP

Ipc: H01L 31/072 20060101ALI20110829BHEP

Ipc: H01L 31/0392 20060101ALI20110829BHEP

Ipc: H01L 31/0376 20060101ALI20110829BHEP

Ipc: H01L 31/028 20060101ALI20110829BHEP

Ipc: H01L 31/0236 20060101ALI20110829BHEP

Ipc: H01L 21/268 20060101ALI20110829BHEP

Ipc: H01L 21/02 20060101AFI20110829BHEP

17Q First examination report despatched

Effective date: 20130522

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20150826