EP2276068A4 - Dispositif a semi-conducteurs - Google Patents

Dispositif a semi-conducteurs

Info

Publication number
EP2276068A4
EP2276068A4 EP20090725599 EP09725599A EP2276068A4 EP 2276068 A4 EP2276068 A4 EP 2276068A4 EP 20090725599 EP20090725599 EP 20090725599 EP 09725599 A EP09725599 A EP 09725599A EP 2276068 A4 EP2276068 A4 EP 2276068A4
Authority
EP
European Patent Office
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP20090725599
Other languages
German (de)
English (en)
Other versions
EP2276068A1 (fr
Inventor
Satoshi Tanimoto
Norihiko Kiritani
Toshiharu Makino
Masahiko Ogura
Norio Tokuda
Hiromitsu Kato
Hideyo Okushi
Satoshi Yamasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissan Motor Co Ltd
Original Assignee
Nissan Motor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Motor Co Ltd filed Critical Nissan Motor Co Ltd
Publication of EP2276068A1 publication Critical patent/EP2276068A1/fr
Publication of EP2276068A4 publication Critical patent/EP2276068A4/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6738—Schottky barrier electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/8303—Diamond
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/86—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
EP20090725599 2008-03-26 2009-02-27 Dispositif a semi-conducteurs Withdrawn EP2276068A4 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008081975 2008-03-26
JP2009044570A JP5565895B2 (ja) 2008-03-26 2009-02-26 半導体装置
PCT/JP2009/053715 WO2009119248A1 (fr) 2008-03-26 2009-02-27 Dispositif à semi-conducteurs

Publications (2)

Publication Number Publication Date
EP2276068A1 EP2276068A1 (fr) 2011-01-19
EP2276068A4 true EP2276068A4 (fr) 2013-10-16

Family

ID=41113454

Family Applications (1)

Application Number Title Priority Date Filing Date
EP20090725599 Withdrawn EP2276068A4 (fr) 2008-03-26 2009-02-27 Dispositif a semi-conducteurs

Country Status (6)

Country Link
US (1) US9136400B2 (fr)
EP (1) EP2276068A4 (fr)
JP (1) JP5565895B2 (fr)
KR (1) KR101250070B1 (fr)
CN (2) CN101981702B (fr)
WO (1) WO2009119248A1 (fr)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5565895B2 (ja) * 2008-03-26 2014-08-06 日産自動車株式会社 半導体装置
JP5119553B2 (ja) * 2008-07-24 2013-01-16 独立行政法人産業技術総合研究所 ダイヤモンド半導体素子
TWI439474B (zh) 2009-10-22 2014-06-01 Asahi Kasei Chemicals Corp Methacrylic resin, which is molded into the manufacture of acrylic resins and methacrylic method
JP6203074B2 (ja) * 2014-02-17 2017-09-27 株式会社東芝 半導体装置およびその製造方法
JP6257459B2 (ja) * 2014-06-23 2018-01-10 株式会社東芝 半導体装置及びその製造方法
KR101625381B1 (ko) 2014-08-29 2016-06-02 삼성중공업 주식회사 해상 구조물 계류 장치
JP6444718B2 (ja) * 2014-12-15 2018-12-26 株式会社東芝 半導体装置
JP6458525B2 (ja) 2015-02-10 2019-01-30 富士電機株式会社 炭化珪素半導体装置の製造方法
US20160266496A1 (en) * 2015-03-10 2016-09-15 Uab Research Foundation Fabrication and encapsulation of micro-circuits on diamond and uses thereof
US9884414B2 (en) 2015-08-24 2018-02-06 Snap-On Incorporated Reservoir cap socket
CN105428233A (zh) * 2015-11-20 2016-03-23 如皋市大昌电子有限公司 一种二极管的生产工艺
JP6703683B2 (ja) * 2017-12-20 2020-06-03 国立研究開発法人産業技術総合研究所 単結晶ダイヤモンドおよびそれを用いた半導体素子
CA3159105A1 (fr) * 2019-10-28 2021-05-06 Psiquantum, Corp. Composants electroniques utilisant une ionisation de champ
JP7586318B2 (ja) * 2021-06-10 2024-11-19 富士通株式会社 光導波路、量子演算装置及び光導波路の製造方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0450306A1 (fr) * 1990-02-28 1991-10-09 Hitachi, Ltd. Diode rapide et son procédé de fabrication
JPH05275467A (ja) * 1992-03-24 1993-10-22 Japan Energy Corp 化合物半導体装置およびその製造方法
US20010015445A1 (en) * 1999-12-13 2001-08-23 Michio Nemoto Semiconductor device
WO2003094240A1 (fr) * 2002-04-30 2003-11-13 Cree, Inc. Dispositifs de commutation de haute tension et procede de production desdits dispositifs
EP1503425A2 (fr) * 2003-07-30 2005-02-02 Nissan Motor Co., Ltd. Dispositif semi-conducteur à hétérojonction et procédé pour sa fabrication
US20070215873A1 (en) * 2004-10-12 2007-09-20 Guy Silver Near natural breakdown device

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US215885A (en) * 1879-05-27 Improvement in cultivators
US3390311A (en) * 1964-09-14 1968-06-25 Gen Electric Seleno-telluride p-nu junction device utilizing deep trapping states
JPS5544733A (en) * 1978-09-27 1980-03-29 Toshiba Corp Diode
US4632713A (en) 1985-07-31 1986-12-30 Texas Instruments Incorporated Process of making Schottky barrier devices formed by diffusion before contacting
US4941026A (en) * 1986-12-05 1990-07-10 General Electric Company Semiconductor devices exhibiting minimum on-resistance
GB2233822A (en) * 1989-07-12 1991-01-16 Philips Electronic Associated A thin film field effect transistor
JPH05283361A (ja) * 1992-04-03 1993-10-29 Sumitomo Electric Ind Ltd ダイヤモンド半導体装置およびその製造方法
JPH10256572A (ja) * 1997-03-11 1998-09-25 Mitsubishi Materials Corp サージ吸収素子
JP3955396B2 (ja) * 1998-09-17 2007-08-08 株式会社ルネサステクノロジ 半導体サージ吸収素子
JP2000299386A (ja) * 1999-04-14 2000-10-24 Nec Corp 半導体回路装置及びその製造方法
US6313482B1 (en) * 1999-05-17 2001-11-06 North Carolina State University Silicon carbide power devices having trench-based silicon carbide charge coupling regions therein
JP4154074B2 (ja) * 1999-05-27 2008-09-24 株式会社日立製作所 サージアブソーバ
JP3138705B1 (ja) * 1999-08-31 2001-02-26 工業技術院長 ダイヤモンドｐｎ接合ダイオードおよびその作製方法
JP3655834B2 (ja) * 2001-03-29 2005-06-02 株式会社東芝 半導体装置
US20040067324A1 (en) * 2002-09-13 2004-04-08 Lazarev Pavel I Organic photosensitive optoelectronic device
JP4403292B2 (ja) * 2004-02-03 2010-01-27 富士電機デバイステクノロジー株式会社 半導体装置
JP2005268430A (ja) * 2004-03-17 2005-09-29 Nissan Motor Co Ltd オーミック電極構造体およびその製造方法
CN100369271C (zh) * 2004-04-07 2008-02-13 中国科学院半导体研究所 氮化镓基肖特基势垒高度增强型紫外探测器及制作方法
US20070138482A1 (en) * 2005-12-08 2007-06-21 Nissan Motor Co., Ltd. Silicon carbide semiconductor device and method for producing the same
JP5225549B2 (ja) * 2006-03-15 2013-07-03 日本碍子株式会社 半導体素子
CN1960005A (zh) * 2006-11-17 2007-05-09 虞和元 快速恢复整流器结构
JP5565895B2 (ja) * 2008-03-26 2014-08-06 日産自動車株式会社 半導体装置
US8551867B2 (en) * 2010-12-30 2013-10-08 Suzhou Silikron Semicoductor Co., Ltd Mesa edge shielding trench Schottky rectifier and method of manufacture thereof

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0450306A1 (fr) * 1990-02-28 1991-10-09 Hitachi, Ltd. Diode rapide et son procédé de fabrication
JPH05275467A (ja) * 1992-03-24 1993-10-22 Japan Energy Corp 化合物半導体装置およびその製造方法
US20010015445A1 (en) * 1999-12-13 2001-08-23 Michio Nemoto Semiconductor device
WO2003094240A1 (fr) * 2002-04-30 2003-11-13 Cree, Inc. Dispositifs de commutation de haute tension et procede de production desdits dispositifs
EP1503425A2 (fr) * 2003-07-30 2005-02-02 Nissan Motor Co., Ltd. Dispositif semi-conducteur à hétérojonction et procédé pour sa fabrication
US20070215873A1 (en) * 2004-10-12 2007-09-20 Guy Silver Near natural breakdown device

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
MORI M ET AL: "6.5 KV ULTRA SOFT & FAST RECOVERY DIODE (U-SFD) WITH HIGH REVERSE RECOVERY CAPABILITY", 12TH. INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND IC S. ISPSD 2000. PROCEEDINGS. TOULOUSE, FRANCE, MAY 22 - 25, 2000; [INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & IC'S], NEW YORK, NY : IEEE, US, 22 May 2000 (2000-05-22), pages 115 - 118, XP000987844, ISBN: 978-0-7803-6269-7, DOI: 10.1109/ISPSD.2000.856785 *
See also references of WO2009119248A1 *

Also Published As

Publication number Publication date
CN101981702B (zh) 2015-09-23
JP5565895B2 (ja) 2014-08-06
CN104867969B (zh) 2018-03-16
EP2276068A1 (fr) 2011-01-19
US9136400B2 (en) 2015-09-15
US20110017991A1 (en) 2011-01-27
CN104867969A (zh) 2015-08-26
JP2009260278A (ja) 2009-11-05
WO2009119248A1 (fr) 2009-10-01
KR101250070B1 (ko) 2013-04-03
CN101981702A (zh) 2011-02-23
KR20100139067A (ko) 2010-12-31

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