EP2332178A4 - Dünnschicht-solarzelle und herstellungsverfahren dafür - Google Patents

Dünnschicht-solarzelle und herstellungsverfahren dafür

Info

Publication number
EP2332178A4
EP2332178A4 EP09810241A EP09810241A EP2332178A4 EP 2332178 A4 EP2332178 A4 EP 2332178A4 EP 09810241 A EP09810241 A EP 09810241A EP 09810241 A EP09810241 A EP 09810241A EP 2332178 A4 EP2332178 A4 EP 2332178A4
Authority
EP
European Patent Office
Prior art keywords
thin
manufacturing
same
solar cell
film type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
EP09810241A
Other languages
English (en)
French (fr)
Other versions
EP2332178A2 (de
Inventor
Sun Ho Kim
Jung Hoon Choi
Seung-Yoon Lee
Heon Min Lee
Young Joo Eo
Kang Seok Moon
Seh-Won Ahn
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Electronics Inc
Original Assignee
LG Electronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Electronics Inc filed Critical LG Electronics Inc
Priority to EP12008455A priority Critical patent/EP2573813A1/de
Publication of EP2332178A2 publication Critical patent/EP2332178A2/de
Publication of EP2332178A4 publication Critical patent/EP2332178A4/de
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H10F19/35—Structures for the connecting of adjacent photovoltaic cells, e.g. interconnections or insulating spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/707—Surface textures, e.g. pyramid structures of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
EP09810241A 2008-09-01 2009-08-31 Dünnschicht-solarzelle und herstellungsverfahren dafür Ceased EP2332178A4 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP12008455A EP2573813A1 (de) 2008-09-01 2009-08-31 Herstellungsverfahren mit reduzierter Anzahl von Strukturierungsschritten für eine Dünnschichtsolarzelle mit serienverschalteten Basiszellen und entsprechende Vorrichtung

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020080085820A KR101144808B1 (ko) 2008-09-01 2008-09-01 박막형 태양전지 제조방법 및 이를 이용한 박막형 태양전지
PCT/KR2009/004871 WO2010024636A2 (en) 2008-09-01 2009-08-31 Thin-film type solar cell and method for manufacturing the same

Publications (2)

Publication Number Publication Date
EP2332178A2 EP2332178A2 (de) 2011-06-15
EP2332178A4 true EP2332178A4 (de) 2012-06-06

Family

ID=41722156

Family Applications (2)

Application Number Title Priority Date Filing Date
EP12008455A Withdrawn EP2573813A1 (de) 2008-09-01 2009-08-31 Herstellungsverfahren mit reduzierter Anzahl von Strukturierungsschritten für eine Dünnschichtsolarzelle mit serienverschalteten Basiszellen und entsprechende Vorrichtung
EP09810241A Ceased EP2332178A4 (de) 2008-09-01 2009-08-31 Dünnschicht-solarzelle und herstellungsverfahren dafür

Family Applications Before (1)

Application Number Title Priority Date Filing Date
EP12008455A Withdrawn EP2573813A1 (de) 2008-09-01 2009-08-31 Herstellungsverfahren mit reduzierter Anzahl von Strukturierungsschritten für eine Dünnschichtsolarzelle mit serienverschalteten Basiszellen und entsprechende Vorrichtung

Country Status (4)

Country Link
US (1) US20100059100A1 (de)
EP (2) EP2573813A1 (de)
KR (1) KR101144808B1 (de)
WO (1) WO2010024636A2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011066045A (ja) * 2009-09-15 2011-03-31 Seiko Epson Corp 太陽電池の製造方法
KR101210168B1 (ko) * 2010-03-24 2012-12-07 엘지이노텍 주식회사 태양광 발전장치 및 이의 제조방법
US8563351B2 (en) * 2010-06-25 2013-10-22 Taiwan Semiconductor Manufacturing Co., Ltd. Method for manufacturing photovoltaic device
WO2012030701A2 (en) * 2010-08-30 2012-03-08 First Solar, Inc. Photovoltaic device interconnect
KR20130109330A (ko) 2012-03-27 2013-10-08 엘지이노텍 주식회사 태양전지 및 이의 제조 방법
KR101301003B1 (ko) * 2012-04-30 2013-08-28 에스엔유 프리시젼 주식회사 박막 태양전지 제조방법 및 이를 이용하는 박막 태양전지
US9306106B2 (en) * 2012-12-18 2016-04-05 International Business Machines Corporation Monolithic integration of heterojunction solar cells
CN103984768B (zh) 2014-05-30 2017-09-29 华为技术有限公司 一种数据库集群管理数据的方法、节点及系统
KR102423108B1 (ko) * 2015-06-11 2022-07-22 주성엔지니어링(주) 박막형 태양전지와 그의 제조방법
KR101868792B1 (ko) * 2016-08-05 2018-06-19 박준형 자가발전에 의한 충전식 디스플레이 패널
PL422635A1 (pl) * 2017-08-25 2019-03-11 Eos Spółka Z Ograniczoną Odpowiedzialnością Sposób wytwarzania komponentu fotowoltaicznego oraz komponent fotowoltaiczny
JP6592639B1 (ja) * 2018-03-23 2019-10-16 積水化学工業株式会社 太陽電池の製造方法、及び、太陽電池

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55108780A (en) * 1979-02-14 1980-08-21 Sharp Corp Thin film solar cell
US5131954A (en) * 1990-10-15 1992-07-21 United Solar Systems Corporation Monolithic solar cell array and method for its manufacturing
JP2986875B2 (ja) * 1990-09-07 1999-12-06 キヤノン株式会社 集積化太陽電池
EP1045454A1 (de) * 1998-07-27 2000-10-18 Citizen Watch Co., Ltd. Solarzelle und herstellungsverfahren, und maske für photolithographie zur herstellung der solarzelle
WO2004068536A2 (en) * 2003-01-30 2004-08-12 University Of Cape Town A thin film semiconductor device and method of manufacturing a thin film semiconductor device
WO2007044555A2 (en) * 2005-10-07 2007-04-19 Applied Materials, Inc. System and method for making an improved thin film solar cell interconnect
WO2007115100A2 (en) * 2006-03-31 2007-10-11 Applied Materials, Inc. Method for forming thin film photovoltaic interconnects using self aligned process
WO2008022383A1 (en) * 2006-08-22 2008-02-28 Newsouth Innovations Pty Ltd Thin-film solar module

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2179748B (en) * 1985-08-20 1989-09-06 Sharp Kk Thermal flow sensor
JPH0381647U (de) * 1989-12-08 1991-08-21
JP3653800B2 (ja) * 1995-06-15 2005-06-02 株式会社カネカ 集積化薄膜太陽電池の製造方法
CA2342910C (en) 1998-09-04 2008-08-05 Nippon Sheet Glass Co., Ltd. Light-colored high-transmittance glass and method of manufacturing the same, glass sheet with conductive film using the same and method of manufacturing the glass sheet, and glassarticle
US6617798B2 (en) * 2000-03-23 2003-09-09 Samsung Sdi Co., Ltd. Flat panel display device having planar field emission source
JP4131615B2 (ja) * 2001-01-22 2008-08-13 三洋電機株式会社 集積型光起電力装置の製造方法
JP2006013403A (ja) * 2004-06-29 2006-01-12 Sanyo Electric Co Ltd 太陽電池、太陽電池モジュール、その製造方法およびその修復方法
KR20080021428A (ko) * 2006-09-04 2008-03-07 엘지전자 주식회사 바이패스 다이오드를 포함하는 광기전력 변환장치 및 그제조방법
KR20080079058A (ko) 2007-02-26 2008-08-29 엘지전자 주식회사 박막형 태양전지 모듈과 그의 제조방법

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55108780A (en) * 1979-02-14 1980-08-21 Sharp Corp Thin film solar cell
JP2986875B2 (ja) * 1990-09-07 1999-12-06 キヤノン株式会社 集積化太陽電池
US5131954A (en) * 1990-10-15 1992-07-21 United Solar Systems Corporation Monolithic solar cell array and method for its manufacturing
EP1045454A1 (de) * 1998-07-27 2000-10-18 Citizen Watch Co., Ltd. Solarzelle und herstellungsverfahren, und maske für photolithographie zur herstellung der solarzelle
WO2004068536A2 (en) * 2003-01-30 2004-08-12 University Of Cape Town A thin film semiconductor device and method of manufacturing a thin film semiconductor device
WO2007044555A2 (en) * 2005-10-07 2007-04-19 Applied Materials, Inc. System and method for making an improved thin film solar cell interconnect
WO2007115100A2 (en) * 2006-03-31 2007-10-11 Applied Materials, Inc. Method for forming thin film photovoltaic interconnects using self aligned process
WO2008022383A1 (en) * 2006-08-22 2008-02-28 Newsouth Innovations Pty Ltd Thin-film solar module

Also Published As

Publication number Publication date
EP2332178A2 (de) 2011-06-15
WO2010024636A3 (en) 2010-06-24
EP2573813A1 (de) 2013-03-27
KR101144808B1 (ko) 2012-05-11
KR20100026710A (ko) 2010-03-10
US20100059100A1 (en) 2010-03-11
WO2010024636A2 (en) 2010-03-04

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