EP2357664A4 - Composition d'étanchéité pour semi-conducteurs, dispositif à semi-conducteurs et procédé de fabrication de dispositif à semi-conducteurs - Google Patents

Composition d'étanchéité pour semi-conducteurs, dispositif à semi-conducteurs et procédé de fabrication de dispositif à semi-conducteurs

Info

Publication number
EP2357664A4
EP2357664A4 EP10780665.5A EP10780665A EP2357664A4 EP 2357664 A4 EP2357664 A4 EP 2357664A4 EP 10780665 A EP10780665 A EP 10780665A EP 2357664 A4 EP2357664 A4 EP 2357664A4
Authority
EP
European Patent Office
Prior art keywords
semiconductor device
semiconductor
sealing composition
device manufacturing
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP10780665.5A
Other languages
German (de)
English (en)
Other versions
EP2357664A1 (fr
Inventor
Shoko Ono
Kazuo Kohmura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsui Chemicals Inc
Original Assignee
Mitsui Chemicals Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Chemicals Inc filed Critical Mitsui Chemicals Inc
Publication of EP2357664A1 publication Critical patent/EP2357664A1/fr
Publication of EP2357664A4 publication Critical patent/EP2357664A4/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6534—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6548—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by forming intermediate materials, e.g. capping layers or diffusion barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H10W20/076—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers in via holes or trenches
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K2323/00—Functional layers of liquid crystal optical display excluding electroactive liquid crystal layer characterised by chemical composition
    • C09K2323/05—Bonding or intermediate layer characterised by chemical composition, e.g. sealant or spacer
    • C09K2323/055—Epoxy
EP10780665.5A 2009-05-29 2010-05-28 Composition d'étanchéité pour semi-conducteurs, dispositif à semi-conducteurs et procédé de fabrication de dispositif à semi-conducteurs Withdrawn EP2357664A4 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009130251 2009-05-29
PCT/JP2010/059151 WO2010137711A1 (fr) 2009-05-29 2010-05-28 Composition d'étanchéité pour semi-conducteurs, dispositif à semi-conducteurs et procédé de fabrication de dispositif à semi-conducteurs

Publications (2)

Publication Number Publication Date
EP2357664A1 EP2357664A1 (fr) 2011-08-17
EP2357664A4 true EP2357664A4 (fr) 2014-07-30

Family

ID=43222814

Family Applications (1)

Application Number Title Priority Date Filing Date
EP10780665.5A Withdrawn EP2357664A4 (fr) 2009-05-29 2010-05-28 Composition d'étanchéité pour semi-conducteurs, dispositif à semi-conducteurs et procédé de fabrication de dispositif à semi-conducteurs

Country Status (8)

Country Link
US (1) US8304924B2 (fr)
EP (1) EP2357664A4 (fr)
JP (2) JP4699565B2 (fr)
KR (1) KR101186719B1 (fr)
CN (1) CN102224577B (fr)
SG (1) SG173429A1 (fr)
TW (1) TWI423402B (fr)
WO (1) WO2010137711A1 (fr)

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JP4913269B1 (ja) * 2010-09-10 2012-04-11 三井化学株式会社 半導体装置の製造方法およびリンス液
SG11201404068QA (en) * 2012-01-17 2014-10-30 Mitsui Chemicals Inc Semiconductor sealing composition, semiconductor device and method for producing same, and polymer and method for producing same
JP5840042B2 (ja) * 2012-03-22 2016-01-06 三井化学株式会社 半導体用シール強化組成物、半導体装置および半導体装置の製造方法
IN2015DN00369A (fr) * 2012-07-17 2015-06-12 Mitsui Chemicals Inc
JP6049432B2 (ja) * 2012-12-06 2016-12-21 三井化学株式会社 多孔質低屈折率材料用のシール組成物、低屈折率部材及びその製造方法。
JP6058788B2 (ja) * 2013-03-27 2017-01-11 三井化学株式会社 複合体の製造方法及び組成物
RU2542291C1 (ru) * 2013-07-23 2015-02-20 Общество с ограниченной ответственностью "Автопластик" (ООО "Автопластик") Невысыхающая резиновая смесь
SG11201700576UA (en) 2014-08-08 2017-02-27 Mitsui Chemicals Inc Sealing composition and method of manufacturing semiconductor device
KR101898404B1 (ko) 2014-12-17 2018-09-12 미쓰이 가가쿠 가부시키가이샤 기판 중간체, 관통 비어 전극 기판 및 관통 비어 전극 형성 방법
TWI712640B (zh) * 2015-11-16 2020-12-11 日商三井化學股份有限公司 半導體用膜組成物、半導體用膜組成物的製造方法、半導體用構件的製造方法、半導體用工程材料的製造方法及半導體裝置
EP3616903B1 (fr) 2017-04-28 2023-09-27 Mitsui Chemicals, Inc. Corps stratifié et méthode de fabrication d'un corps stratifié
CN111936588A (zh) 2018-04-06 2020-11-13 日产化学株式会社 涂布膜形成组合物和半导体装置的制造方法
SG11202103798VA (en) 2018-10-26 2021-05-28 Mitsui Chemicals Inc Method of manufacturing substrate layered body and layered body
WO2023032924A1 (fr) 2021-09-06 2023-03-09 三井化学株式会社 Composition pour former un film pour semi-conducteur, stratifié et stratifié de substrat
JP7761656B2 (ja) 2021-09-06 2025-10-28 三井化学株式会社 半導体用の膜を形成するための組成物、積層体及び基板積層体

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EP1815973A1 (fr) * 2004-11-18 2007-08-08 Mitsui Chemicals, Inc. Stratifie comprenant un film multicouche lie par liaison hydrogene, film mince autoportant fourni a partir dudit stratifie et leur procede de fabrication et utilisation

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EP1815973A1 (fr) * 2004-11-18 2007-08-08 Mitsui Chemicals, Inc. Stratifie comprenant un film multicouche lie par liaison hydrogene, film mince autoportant fourni a partir dudit stratifie et leur procede de fabrication et utilisation

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See also references of WO2010137711A1 *

Also Published As

Publication number Publication date
JPWO2010137711A1 (ja) 2012-11-15
JP4699565B2 (ja) 2011-06-15
JP5307166B2 (ja) 2013-10-02
KR101186719B1 (ko) 2012-09-27
EP2357664A1 (fr) 2011-08-17
SG173429A1 (en) 2011-09-29
US20110241210A1 (en) 2011-10-06
CN102224577A (zh) 2011-10-19
KR20110086573A (ko) 2011-07-28
TWI423402B (zh) 2014-01-11
JP2011103490A (ja) 2011-05-26
TW201104805A (en) 2011-02-01
WO2010137711A1 (fr) 2010-12-02
CN102224577B (zh) 2013-12-04
US8304924B2 (en) 2012-11-06

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