EP2363880A3 - Monolithische Integration von Silizium- und III-V-Bauelementen - Google Patents
Monolithische Integration von Silizium- und III-V-Bauelementen Download PDFInfo
- Publication number
- EP2363880A3 EP2363880A3 EP11001112.9A EP11001112A EP2363880A3 EP 2363880 A3 EP2363880 A3 EP 2363880A3 EP 11001112 A EP11001112 A EP 11001112A EP 2363880 A3 EP2363880 A3 EP 2363880A3
- Authority
- EP
- European Patent Office
- Prior art keywords
- group iii
- silicon
- transistor
- schottky diode
- silicon substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/74—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
- H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
- H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
- H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/08—Manufacture or treatment characterised by using material-based technologies using combinations of technologies, e.g. using both Si and SiC technologies or using both Si and Group III-V technologies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D88/00—Three-dimensional [3D] integrated devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
- H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
Landscapes
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US33919010P | 2010-03-01 | 2010-03-01 | |
| US12/928,103 US8981380B2 (en) | 2010-03-01 | 2010-12-03 | Monolithic integration of silicon and group III-V devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| EP2363880A2 EP2363880A2 (de) | 2011-09-07 |
| EP2363880A3 true EP2363880A3 (de) | 2014-01-22 |
Family
ID=44009973
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP11001112.9A Withdrawn EP2363880A3 (de) | 2010-03-01 | 2011-02-11 | Monolithische Integration von Silizium- und III-V-Bauelementen |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US8981380B2 (de) |
| EP (1) | EP2363880A3 (de) |
| JP (1) | JP5567513B2 (de) |
Families Citing this family (46)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9219058B2 (en) * | 2010-03-01 | 2015-12-22 | Infineon Technologies Americas Corp. | Efficient high voltage switching circuits and monolithic integration of same |
| US8981380B2 (en) * | 2010-03-01 | 2015-03-17 | International Rectifier Corporation | Monolithic integration of silicon and group III-V devices |
| US9236376B2 (en) | 2011-03-21 | 2016-01-12 | Infineon Technologies Americas Corp. | Power semiconductor device with oscillation prevention |
| US9362905B2 (en) * | 2011-03-21 | 2016-06-07 | Infineon Technologies Americas Corp. | Composite semiconductor device with turn-on prevention control |
| US9859882B2 (en) | 2011-03-21 | 2018-01-02 | Infineon Technologies Americas Corp. | High voltage composite semiconductor device with protection for a low voltage device |
| US8766375B2 (en) | 2011-03-21 | 2014-07-01 | International Rectifier Corporation | Composite semiconductor device with active oscillation prevention |
| JP5290354B2 (ja) * | 2011-05-06 | 2013-09-18 | シャープ株式会社 | 半導体装置および電子機器 |
| US9087812B2 (en) * | 2011-07-15 | 2015-07-21 | International Rectifier Corporation | Composite semiconductor device with integrated diode |
| US9281388B2 (en) | 2011-07-15 | 2016-03-08 | Infineon Technologies Americas Corp. | Composite semiconductor device with a SOI substrate having an integrated diode |
| JP5678866B2 (ja) * | 2011-10-31 | 2015-03-04 | 株式会社デンソー | 半導体装置およびその製造方法 |
| US9887139B2 (en) | 2011-12-28 | 2018-02-06 | Infineon Technologies Austria Ag | Integrated heterojunction semiconductor device and method for producing an integrated heterojunction semiconductor device |
| US8872235B2 (en) * | 2012-02-23 | 2014-10-28 | Infineon Technologies Austria Ag | Integrated Schottky diode for HEMTs |
| EP2639832A3 (de) * | 2012-03-15 | 2015-08-05 | International Rectifier Corporation | Gruppe-III-IV und Gruppe-IV-Verbunddiode |
| US9666705B2 (en) * | 2012-05-14 | 2017-05-30 | Infineon Technologies Austria Ag | Contact structures for compound semiconductor devices |
| US8587033B1 (en) * | 2012-06-04 | 2013-11-19 | Infineon Technologies Austria Ag | Monolithically integrated HEMT and current protection device |
| KR101927408B1 (ko) | 2012-07-20 | 2019-03-07 | 삼성전자주식회사 | 고전자 이동도 트랜지스터 및 그 제조방법 |
| KR101919421B1 (ko) * | 2012-08-16 | 2018-11-19 | 삼성전자주식회사 | 반도체소자 및 그 제조방법 |
| KR101922117B1 (ko) | 2012-08-16 | 2018-11-26 | 삼성전자주식회사 | 트랜지스터를 포함하는 전자소자 및 그 동작방법 |
| KR20140026846A (ko) | 2012-08-23 | 2014-03-06 | 삼성전자주식회사 | 광소자 |
| KR101963227B1 (ko) * | 2012-09-28 | 2019-03-28 | 삼성전자주식회사 | 파워 스위칭 소자 및 그 제조방법 |
| US9041067B2 (en) | 2013-02-11 | 2015-05-26 | International Rectifier Corporation | Integrated half-bridge circuit with low side and high side composite switches |
| WO2014154120A1 (zh) * | 2013-03-25 | 2014-10-02 | 复旦大学 | 一种采用先栅工艺的高电子迁移率器件及其制造方法 |
| US9142550B2 (en) * | 2013-06-18 | 2015-09-22 | Infineon Technologies Austria Ag | High-voltage cascaded diode with HEMT and monolithically integrated semiconductor diode |
| DE102013212037A1 (de) * | 2013-06-25 | 2015-01-08 | Bayerische Motoren Werke Aktiengesellschaft | Schaltregler zur Ansteuerung eines Leuchtmittels |
| JP6143598B2 (ja) * | 2013-08-01 | 2017-06-07 | 株式会社東芝 | 半導体装置 |
| US9472625B2 (en) | 2014-03-17 | 2016-10-18 | Infineon Technologies Austria Ag | Operational Gallium Nitride devices |
| US10587194B2 (en) | 2014-08-20 | 2020-03-10 | Navitas Semiconductor, Inc. | Power transistor with distributed gate |
| US9741711B2 (en) | 2014-10-28 | 2017-08-22 | Semiconductor Components Industries, Llc | Cascode semiconductor device structure and method therefor |
| US9356017B1 (en) | 2015-02-05 | 2016-05-31 | Infineon Technologies Austria Ag | Switch circuit and semiconductor device |
| US10290674B2 (en) * | 2016-04-22 | 2019-05-14 | QROMIS, Inc. | Engineered substrate including light emitting diode and power circuitry |
| JP6701520B2 (ja) * | 2016-05-13 | 2020-05-27 | 富士電機株式会社 | 電力変換装置 |
| US10522532B2 (en) * | 2016-05-27 | 2019-12-31 | Taiwan Semiconductor Manufacturing Co., Ltd. | Through via extending through a group III-V layer |
| TWI894863B (zh) * | 2016-06-14 | 2025-08-21 | 美商克若密斯股份有限公司 | 用於功率及rf應用的工程基板結構 |
| US10224426B2 (en) | 2016-12-02 | 2019-03-05 | Vishay-Siliconix | High-electron-mobility transistor devices |
| US10381473B2 (en) | 2016-12-02 | 2019-08-13 | Vishay-Siliconix | High-electron-mobility transistor with buried interconnect |
| DE102017103111B4 (de) * | 2017-02-16 | 2025-03-13 | Semikron Elektronik Gmbh & Co. Kg | Halbleiterdiode und elektronische Schaltungsanordnung hiermit |
| US10128228B1 (en) | 2017-06-22 | 2018-11-13 | Infineon Technologies Americas Corp. | Type III-V semiconductor device with integrated diode |
| TWI695418B (zh) * | 2017-09-22 | 2020-06-01 | 新唐科技股份有限公司 | 半導體元件及其製造方法 |
| US10312202B2 (en) * | 2017-11-07 | 2019-06-04 | Texas Instruments Incorporated | Zero capacitance electrostatic discharge devices |
| US10693288B2 (en) | 2018-06-26 | 2020-06-23 | Vishay SIliconix, LLC | Protection circuits with negative gate swing capability |
| US10833063B2 (en) | 2018-07-25 | 2020-11-10 | Vishay SIliconix, LLC | High electron mobility transistor ESD protection structures |
| JP7364997B2 (ja) * | 2019-03-13 | 2023-10-19 | テキサス インスツルメンツ インコーポレイテッド | 窒化物半導体基板 |
| FR3097682B1 (fr) * | 2019-06-19 | 2023-01-13 | St Microelectronics Gmbh | Composant monolithique comportant un transistor de puissance au nitrure de gallium |
| US12394742B2 (en) * | 2019-12-09 | 2025-08-19 | Texas Instruments Incorporated | Interconnect structure for high power GaN module including a printed planar interconnect line and method for making the same |
| CN113690236B (zh) * | 2021-06-30 | 2023-06-09 | 华灿光电（浙江）有限公司 | 高电子迁移率晶体管芯片及其制备方法 |
| US20240395805A1 (en) * | 2023-05-26 | 2024-11-28 | Cambridge Gan Devices Limited | Power semiconductor device comprising a silicon substrate |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5021840A (en) * | 1987-08-18 | 1991-06-04 | Texas Instruments Incorporated | Schottky or PN diode with composite sidewall |
| US20080191216A1 (en) * | 2007-02-09 | 2008-08-14 | Sanken Electric Co., Ltd. | Diode-Like Composite Semiconductor Device |
| US20080315257A1 (en) * | 2007-06-19 | 2008-12-25 | Renesas Technology Corp. | Semiconductor device and power conversion device using the same |
| US20090166677A1 (en) * | 2007-12-28 | 2009-07-02 | Daisuke Shibata | Semiconductor device and manufacturing method thereof |
| US20090189191A1 (en) * | 2008-01-30 | 2009-07-30 | The Furukawa Electric Co., Ltd | Semiconductor device |
Family Cites Families (59)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6433396B1 (en) * | 1999-10-05 | 2002-08-13 | International Rectifier Corporation | Trench MOSFET with integrated schottky device and process for its manufacture |
| JP5130641B2 (ja) * | 2006-03-31 | 2013-01-30 | サンケン電気株式会社 | 複合半導体装置 |
| US7550781B2 (en) * | 2004-02-12 | 2009-06-23 | International Rectifier Corporation | Integrated III-nitride power devices |
| JP2006310769A (ja) * | 2005-02-02 | 2006-11-09 | Internatl Rectifier Corp | Ｉｉｉ族窒化物一体化ショットキおよび電力素子 |
| US8866190B2 (en) * | 2005-06-14 | 2014-10-21 | International Rectifler Corporation | Methods of combining silicon and III-nitride material on a single wafer |
| US8168000B2 (en) * | 2005-06-15 | 2012-05-01 | International Rectifier Corporation | III-nitride semiconductor device fabrication |
| US8183595B2 (en) * | 2005-07-29 | 2012-05-22 | International Rectifier Corporation | Normally off III-nitride semiconductor device having a programmable gate |
| US8482035B2 (en) * | 2005-07-29 | 2013-07-09 | International Rectifier Corporation | Enhancement mode III-nitride transistors with single gate Dielectric structure |
| US8614129B2 (en) * | 2005-09-30 | 2013-12-24 | International Rectifier Corporation | Method for fabricating a semiconductor device |
| JP4772542B2 (ja) | 2006-03-15 | 2011-09-14 | 株式会社東芝 | 電力変換装置 |
| US7875958B2 (en) * | 2006-09-27 | 2011-01-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures |
| US7964895B2 (en) * | 2006-10-05 | 2011-06-21 | International Rectifier Corporation | III-nitride heterojunction semiconductor device and method of fabrication |
| US7902809B2 (en) * | 2006-11-28 | 2011-03-08 | International Rectifier Corporation | DC/DC converter including a depletion mode power switch |
| US8674670B2 (en) * | 2006-11-28 | 2014-03-18 | International Rectifier Corporation | DC/DC converter with depletion-mode III-nitride switches |
| US7863877B2 (en) * | 2006-12-11 | 2011-01-04 | International Rectifier Corporation | Monolithically integrated III-nitride power converter |
| WO2008086001A2 (en) * | 2007-01-10 | 2008-07-17 | International Rectifier Corporation | Active area shaping for iii-nitride device and process for its manufacture |
| US7501670B2 (en) | 2007-03-20 | 2009-03-10 | Velox Semiconductor Corporation | Cascode circuit employing a depletion-mode, GaN-based FET |
| US8093597B2 (en) * | 2007-06-25 | 2012-01-10 | International Rectifier Corporation | In situ dopant implantation and growth of a III-nitride semiconductor body |
| US8395132B2 (en) * | 2007-06-25 | 2013-03-12 | International Rectifier Corporation | Ion implanting while growing a III-nitride layer |
| US8174051B2 (en) * | 2007-06-26 | 2012-05-08 | International Rectifier Corporation | III-nitride power device |
| CN101682720A (zh) * | 2007-06-27 | 2010-03-24 | 国际整流器公司 | 在降压变换器中耗尽型器件的栅极驱动方案 |
| US20090050939A1 (en) * | 2007-07-17 | 2009-02-26 | Briere Michael A | Iii-nitride device |
| EP2887402B1 (de) * | 2007-09-12 | 2019-06-12 | Transphorm Inc. | Bidirektionale III-Nitrid-Schalter |
| US8791503B2 (en) * | 2007-09-18 | 2014-07-29 | International Rectifier Corporation | III-nitride semiconductor device with reduced electric field between gate and drain and process for its manufacture |
| US8680579B2 (en) * | 2007-09-20 | 2014-03-25 | International Rectifier Corporation | Individually controlled multiple III-nitride half bridges |
| WO2009038809A1 (en) * | 2007-09-20 | 2009-03-26 | International Rectifier Corporation | Enhancement mode iii-nitride semiconductor device with reduced electric field between the gate and the drain |
| US8159003B2 (en) * | 2007-11-26 | 2012-04-17 | International Rectifier Corporation | III-nitride wafer and devices formed in a III-nitride wafer |
| US7999288B2 (en) * | 2007-11-26 | 2011-08-16 | International Rectifier Corporation | High voltage durability III-nitride semiconductor device |
| US8063616B2 (en) * | 2008-01-11 | 2011-11-22 | International Rectifier Corporation | Integrated III-nitride power converter circuit |
| JP2009246045A (ja) | 2008-03-28 | 2009-10-22 | Furukawa Electric Co Ltd:The | 電界効果トランジスタ及びその製造方法 |
| US8076699B2 (en) * | 2008-04-02 | 2011-12-13 | The Hong Kong Univ. Of Science And Technology | Integrated HEMT and lateral field-effect rectifier combinations, methods, and systems |
| US9159679B2 (en) * | 2008-09-15 | 2015-10-13 | International Rectifier Corporation | Semiconductor package with integrated passives and method for fabricating same |
| EP2394299B8 (de) * | 2009-02-03 | 2017-01-25 | NXP USA, Inc. | Halbleiterstruktur und verfahren zum herstellen einer halbleiterstruktur |
| US7915645B2 (en) * | 2009-05-28 | 2011-03-29 | International Rectifier Corporation | Monolithic vertically integrated composite group III-V and group IV semiconductor device and method for fabricating same |
| US8530938B2 (en) * | 2009-12-10 | 2013-09-10 | International Rectifier Corporation | Monolithic integrated composite group III-V and group IV semiconductor device and method for fabricating same |
| US9378965B2 (en) * | 2009-12-10 | 2016-06-28 | Infineon Technologies Americas Corp. | Highly conductive source/drain contacts in III-nitride transistors |
| US8399912B2 (en) * | 2010-02-16 | 2013-03-19 | International Rectifier Corporation | III-nitride power device with solderable front metal |
| US8981380B2 (en) * | 2010-03-01 | 2015-03-17 | International Rectifier Corporation | Monolithic integration of silicon and group III-V devices |
| US9219058B2 (en) * | 2010-03-01 | 2015-12-22 | Infineon Technologies Americas Corp. | Efficient high voltage switching circuits and monolithic integration of same |
| US9105703B2 (en) * | 2010-03-22 | 2015-08-11 | International Rectifier Corporation | Programmable III-nitride transistor with aluminum-doped gate |
| US20110260210A1 (en) * | 2010-04-23 | 2011-10-27 | Applied Materials, Inc. | Gan-based leds on silicon substrates with monolithically integrated zener diodes |
| JP5707903B2 (ja) * | 2010-12-02 | 2015-04-30 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
| JP6018360B2 (ja) * | 2010-12-02 | 2016-11-02 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
| JP5741042B2 (ja) * | 2011-02-14 | 2015-07-01 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
| US8659030B2 (en) * | 2011-02-28 | 2014-02-25 | International Rectifier Corporation | III-nitride heterojunction devices having a multilayer spacer |
| US8957454B2 (en) * | 2011-03-03 | 2015-02-17 | International Rectifier Corporation | III-Nitride semiconductor structures with strain absorbing interlayer transition modules |
| US9076853B2 (en) * | 2011-03-18 | 2015-07-07 | International Rectifie Corporation | High voltage rectifier and switching circuits |
| US20120241820A1 (en) * | 2011-03-21 | 2012-09-27 | International Rectifier Corporation | III-Nitride Transistor with Passive Oscillation Prevention |
| US8987833B2 (en) * | 2011-04-11 | 2015-03-24 | International Rectifier Corporation | Stacked composite device including a group III-V transistor and a group IV lateral transistor |
| US9343440B2 (en) * | 2011-04-11 | 2016-05-17 | Infineon Technologies Americas Corp. | Stacked composite device including a group III-V transistor and a group IV vertical transistor |
| US20120256190A1 (en) * | 2011-04-11 | 2012-10-11 | International Rectifier Corporation | Stacked Composite Device Including a Group III-V Transistor and a Group IV Diode |
| US20120274366A1 (en) * | 2011-04-28 | 2012-11-01 | International Rectifier Corporation | Integrated Power Stage |
| US8988133B2 (en) * | 2011-07-11 | 2015-03-24 | International Rectifier Corporation | Nested composite switch |
| US20130015501A1 (en) * | 2011-07-11 | 2013-01-17 | International Rectifier Corporation | Nested Composite Diode |
| US9087812B2 (en) * | 2011-07-15 | 2015-07-21 | International Rectifier Corporation | Composite semiconductor device with integrated diode |
| US9281388B2 (en) * | 2011-07-15 | 2016-03-08 | Infineon Technologies Americas Corp. | Composite semiconductor device with a SOI substrate having an integrated diode |
| JP5891650B2 (ja) * | 2011-08-18 | 2016-03-23 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
| US8796738B2 (en) * | 2011-09-21 | 2014-08-05 | International Rectifier Corporation | Group III-V device structure having a selectively reduced impurity concentration |
| US9147701B2 (en) * | 2011-09-22 | 2015-09-29 | Raytheon Company | Monolithic InGaN solar cell power generation with integrated efficient switching DC-DC voltage convertor |
-
2010
- 2010-12-03 US US12/928,103 patent/US8981380B2/en active Active
-
2011
- 2011-02-11 EP EP11001112.9A patent/EP2363880A3/de not_active Withdrawn
- 2011-02-21 JP JP2011034879A patent/JP5567513B2/ja active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5021840A (en) * | 1987-08-18 | 1991-06-04 | Texas Instruments Incorporated | Schottky or PN diode with composite sidewall |
| US20080191216A1 (en) * | 2007-02-09 | 2008-08-14 | Sanken Electric Co., Ltd. | Diode-Like Composite Semiconductor Device |
| US20080315257A1 (en) * | 2007-06-19 | 2008-12-25 | Renesas Technology Corp. | Semiconductor device and power conversion device using the same |
| US20090166677A1 (en) * | 2007-12-28 | 2009-07-02 | Daisuke Shibata | Semiconductor device and manufacturing method thereof |
| US20090189191A1 (en) * | 2008-01-30 | 2009-07-30 | The Furukawa Electric Co., Ltd | Semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| US8981380B2 (en) | 2015-03-17 |
| JP5567513B2 (ja) | 2014-08-06 |
| US20110210337A1 (en) | 2011-09-01 |
| EP2363880A2 (de) | 2011-09-07 |
| JP2011187953A (ja) | 2011-09-22 |
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