EP2474041A2 - Matériau stratifié à semiconducteur et cellule solaire à hétérojonction - Google Patents

Matériau stratifié à semiconducteur et cellule solaire à hétérojonction

Info

Publication number
EP2474041A2
EP2474041A2 EP10728700A EP10728700A EP2474041A2 EP 2474041 A2 EP2474041 A2 EP 2474041A2 EP 10728700 A EP10728700 A EP 10728700A EP 10728700 A EP10728700 A EP 10728700A EP 2474041 A2 EP2474041 A2 EP 2474041A2
Authority
EP
European Patent Office
Prior art keywords
layers
semiconductor
semiconductor layer
layer
solar cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP10728700A
Other languages
German (de)
English (en)
Inventor
Thomas Wagner
Robert Roelver
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of EP2474041A2 publication Critical patent/EP2474041A2/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/146—Superlattices; Multiple quantum well structures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Definitions

  • the invention relates to a semiconductor layer material, in particular for use as an emitter material for a solar cell, as well as a heterojunction solar cell.
  • a semiconductor layer material in particular for use as an emitter material for a solar cell, as well as a heterojunction solar cell.
  • heterojunction solar cells significantly higher voltages can be achieved because of the lower blocking saturation currents of the emitters compared to homojunction cells.
  • the efficiency potential of heterojunction cells is 1-2% absolute above the efficiency potential of homojunction cells.
  • the hitherto available heterojunction solar cells have a doped hetero-emitter of amorphous silicon (aSi); see . M. Tanaka, M. Taguchi, T.
  • the doping of the emitter allows the formation of a pn junction and thus the extraction of the charge carriers generated by sunlight.
  • the most important task of the amorphous silicon layer is to passivate the wafer surface of the solar cell and thus reduce the recombination rate of the charge carriers generated by sunlight, thereby increasing the concentration of the charge carriers in the solar cell , The higher charge carrier concentration leads to a greater splitting of the quasi-Fermi levels in the cell, which is equivalent to a higher achievable electrical voltage at the solar cell.
  • the high doping of the aSi emitter leads to the fact that light absorbed in the emitter does not contribute to the generation of electricity in the solar cell; see .
  • tandem solar cells based on silicon in which stacks of alternating Si and SiO x layers are used as the light-absorbing and charge-carrier-generating layer of a solar cell.
  • the invention has for its object to provide an improved solution for the realization of the emitter layer of a heterojunction solar cell, which combines in particular good passivation properties with sufficiently high conductivity and high transparency for the active components of sunlight.
  • the most important advantage of the Si-based nanostructure material proposed here as a hetero emitter is the significantly lower light absorption in comparison to the previously used amorphous silicon, whereby the losses due to light absorption in the electrically "dead” amorphous Si layer can be significantly minimized W.
  • An essential idea of the invention is to provide a novel Si nanostructuring material, which has a significantly higher optical transparency than the previously used amorphous Si due to its nanocrystalline structure, but at the same time shows similarly good passivation properties and a similarly good electrical conductivity.
  • This nanostructure material is formed in particular by alternating deposition of sub-stoichiometric silicon oxide (SiO x ) (alternatively also silicon carbide (SiC ⁇ ) or silicon nitride (SiN x )) layers and silicon layers in the layer thickness range below 10 nm.
  • SiO x sub-stoichiometric silicon oxide
  • SiC ⁇ silicon carbide
  • SiN x silicon nitride
  • the proposed layer material can also be used outside the insert proposed here as the emitter material of a heterojunction solar cell.
  • a particularly advantageous embodiment within the scope of the existing task provides that a boundary layer of the stack is formed by a second layer and on the outside of which micro contact areas of the first layer adjacent thereto are exposed.
  • nanostructure material used here means that at least the first layers have a nanocrystalline structure
  • the thickness of the first and second layers is in each case in the range between 1 nm and 20 nm, preferably between 2 nm and 10 nm
  • the total thickness in the range between 5 nm and 100 nm, preferably between 10 nm and 60 nm.
  • the total number of layers is between 4 and 20, preferably between 8 and 16.
  • the semiconductor material - here in particular silicon - is in an advantageous embodiment as p-material with phosphorus or as n-material with boron with a concentration in the range of 10 18 to 10 20 cm “3 , in particular from 5 x 10 18 to 5 x 10 19 cm “3 , doped. Due to the property of this network to establish contact with the adjacent layer only at individual points, when used in the heterojunction solar cell only quasi point-like transitions between emitter layer and silicon wafer occur, while the majority of the wafer surface is formed by SiO 2 (alternatively SiC or SiN) is passivated. As a result, the advantage of good passivation of the wafer surface which has also been exploited in conventional heterosocial cells is retained.
  • FIG. 1 is a schematic representation of the structure of a heterojunction solar cell, as a cross-sectional representation
  • FIG. 2A and 2B are schematic cross-sectional views of an embodiment of the semiconductor layer material according to the invention on a semiconductor substrate, after the deposition of a layer stack (FIG. 2A) and after a subsequent heat treatment (FIG. 2B), FIG.
  • FIG. 3 shows a comparative graph of the absorption spectra of amorphous silicon (solid line) and of a semiconductor layer material according to the invention
  • Fig. 4 is a comparative graph of the electrical
  • FIG. 1 shows, in a schematic cross-sectional representation, the structure of a heterojunction solar cell 1 on a p-type or n-type Si semiconductor substrate 3.
  • a hetero-emitter layer 5 is arranged on the Si substrate 3 and a TCO layer 7 is arranged thereon ,
  • the layer structure is completed by a local front-side contact 9 and at the back by a full-area rear-side contact 11.
  • FIGS. 2A and 2B show a stack 50 'or 50 made of a semiconductor layer material, which is used as a hetero-emitter layer 5 in the solar cell structure according to FIG. 1, on a silicon substrate 30.
  • FIG. 2A shows the stack designated by the numeral 50 'after a first process stage
  • FIG. 2B shows the stack then indicated by the numeral 50 after a second process step, and the reference numerals of individual layers of the stack (see below) are formed in correspondence therewith.
  • the layer stack is, as shown in FIG. 2A, "first layers" and SiO layers 52 'are formed as second layers by successive, in particular stacked, Si layers 51. It can be seen that the layer of the stack next to the silicon substrate 30 has a stack SiO layer 52 ', that is, here also referred to as "second layer” layer. The top layer of the stack is also formed by such a second layer 52 '.
  • the Si layers 51 'are doped, and the SiO layers 52' are sub-stoichiometric layers, and the layer thicknesses are each less than 10 nm.
  • Fig. 2B shows the result of a subsequent annealing at temperatures> 1000 0 C resulting structure 50, in which the interfaces between The first and second layers are structured irregularly such that micro contact regions ("point contacts") 50a are formed between adjacent first layers 51 separated from one another by a second layer 52 and at the interface with the silicon substrate 30
  • the function of the layer structure according to the invention of essential microcontact regions is associated with a segregation of Si and stoichiometric SiO 2 during annealing, in the course of which the Si seed layers grow isotropically, contacting the free surface of the layer stack serving as a hetero emitter layer in a solar cell of the type shown in FIG 1 type occurs only after annealing.
  • FIG. 3 shows that advantageously the absorption coefficient of semiconductor layer material constructed according to the invention as emitter material (dashed curve) in the region below about 680 nm, ie in the range of visible light, is lower than that of a comparable layer of amorphous silicon (solid line) Line) is.
  • FIG. 4 shows current density-voltage characteristics of differently constructed semiconductor layer stacks of Si and SiO x with a total thickness of 60 nm each and matching thickness of the first layers (3 nm) and different thicknesses of the second layers (1.5-5 nm ) before annealing. It can be seen that the respective measured values are in good agreement with the respectively calculated profile (with the exception of voltages below 3 V for the embodiment with 5 nm thick SiO x layers). It can also be seen in particular that the choice of the thickness of the second layers makes it possible to adjust the electrical conductivity of the proposed semiconductor layer material over a wide range.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Matériau stratifié à semiconducteur, destiné notamment à être utilisé comme matériau émetteur pour une cellule solaire à hétérojonction, formé d'un empilement de plusieurs premières et deuxièmes couches superposées en alternance, les premières couches étant composées d'un semiconducteur polycristallin élémentaire, et la deuxième couche comportant un composé substoechiométrique électriquement isolant, notamment un oxyde, un carbure ou un nitrure, du semiconducteur. Un recuit permet de structurer les interfaces entre les premières et deuxièmes couches de manière irrégulière de façon à former des zones de microcontact entre des premières couches voisines séparées les unes des autres par une deuxième couche.
EP10728700A 2009-08-31 2010-07-07 Matériau stratifié à semiconducteur et cellule solaire à hétérojonction Withdrawn EP2474041A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102009029017A DE102009029017A1 (de) 2009-08-31 2009-08-31 Halbleiter-Schichtmaterial und Heteroübergangs-Solarzelle
PCT/EP2010/059695 WO2011023441A2 (fr) 2009-08-31 2010-07-07 Matériau stratifié à semiconducteur et cellule solaire à hétérojonction

Publications (1)

Publication Number Publication Date
EP2474041A2 true EP2474041A2 (fr) 2012-07-11

Family

ID=43524809

Family Applications (1)

Application Number Title Priority Date Filing Date
EP10728700A Withdrawn EP2474041A2 (fr) 2009-08-31 2010-07-07 Matériau stratifié à semiconducteur et cellule solaire à hétérojonction

Country Status (5)

Country Link
US (1) US20120211064A1 (fr)
EP (1) EP2474041A2 (fr)
CN (1) CN102576744B (fr)
DE (1) DE102009029017A1 (fr)
WO (1) WO2011023441A2 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120318336A1 (en) * 2011-06-17 2012-12-20 International Business Machines Corporation Contact for silicon heterojunction solar cells
EP2595193A1 (fr) * 2011-11-16 2013-05-22 Hitachi, Ltd. Structure de puits quantique multiple
JP2014027119A (ja) * 2012-07-27 2014-02-06 Nippon Telegr & Teleph Corp <Ntt> 太陽電池

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005106966A1 (fr) * 2004-04-30 2005-11-10 Unisearch Limited Semi-conducteurs amorphes artificiels et applications a des cellules solaires
US20080135089A1 (en) * 2006-11-15 2008-06-12 General Electric Company Graded hybrid amorphous silicon nanowire solar cells
US20080110486A1 (en) * 2006-11-15 2008-05-15 General Electric Company Amorphous-crystalline tandem nanostructured solar cells

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO2011023441A2 *

Also Published As

Publication number Publication date
WO2011023441A2 (fr) 2011-03-03
US20120211064A1 (en) 2012-08-23
DE102009029017A1 (de) 2011-03-03
CN102576744A (zh) 2012-07-11
CN102576744B (zh) 2016-02-10
WO2011023441A3 (fr) 2012-03-29

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