Classifications

• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
  • C23C14/24—Vacuum evaporation
  • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
  • C23C14/325—Electric arc evaporation
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/0021—Reactive sputtering or evaporation
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
  • C23C14/228—Gas flow assisted PVD deposition
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
  • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
  • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
  • H01J37/32055—Arc discharge
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
  • H01J37/32321—Discharge generated by other radiation
  • H01J37/3233—Discharge generated by other radiation using charged particles
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
  • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/32431—Constructional details of the reactor
  • H01J37/3244—Gas supply means
  • H01J37/32449—Gas control, e.g. control of the gas flow
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/32431—Constructional details of the reactor
  • H01J37/32532—Electrodes
  • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/32431—Constructional details of the reactor
  • H01J37/32532—Electrodes
  • H01J37/32614—Consumable cathodes for arc discharge
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
  • H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
  • H01J2237/30—Electron or ion beam tubes for processing objects
  • H01J2237/31—Processing objects on a macro-scale
  • H01J2237/3132—Evaporating
  • H01J2237/3137—Plasma-assisted co-operation

Definitions

• the described arc discharge burns in the vapor of the evaporated material and in the gas jet, thus avoiding that additional plasma working gas has to be released into the deposition chamber.
• the arc plasma is localized and aligned with the shape and propagation of the vapor stream. Thus, no detrimental affection of the directed vapor plume does occur.
• An aspect of an embodiment of the present invention provides an apparatus for applying at least one coating onto at least one substrate.
• the apparatus may comprise: a deposition chamber; at least one evaporant source; at least one energetic beam for impinging the at least one evaporant source forming a vapor plume; at least one anode positioned near the evaporant source for forming an arc discharge between the at least one anode and the at least one evaporant source; and at least one carrier gas forming at least one jet for laterally-confined transport of the vapor plume toward the substrate.
• the at least one substrate providing a deposition chamber; providing at least one evaporant source; impinging the at least one evaporant source with at least one energetic beam to generate a vapor plume; forming an arc discharge between at least one anode and the at least one evaporant source; and emitting at least one carrier gas forming at least one jet in a direction that is at least substantially aligned with the vapor plume for laterally- confined transport of the vapor plume toward the substrate.
• FIG. 4 is a graphical representation that provides the relationship between the jet ion current density (mA/cm 2 ) versus Jet flow (slm) as it pertains to the use of the carrier gas being ionized (e.g., Ar) or non ionized (e.g., He) and demonstrates the existence of an ion drag phenomenon when transonic gas jets intersect a plasma.
• the carrier gas being ionized (e.g., Ar) or non ionized (e.g., He) and demonstrates the existence of an ion drag phenomenon when transonic gas jets intersect a plasma.
• a transverse hollow cathode discharge utilizing Ar as the working gas of the plasma source was crossed by either a He or an Ar carrier gas jet.
• the solenoid 55 may be positioned and energized such as to magnetically enhance the system's plasma- forming efficiency by causing the electrons to move along spiral paths which increases the distance moved by the electrons and thus the probability of an ion- forming collision between the electron and an evaporant or gas jet forming atom.
• the solenoid 55 may be provided to at least partially increase the plasma density, as well as facilitate an axial potential gradient for accelerating positive ions toward the substrate 20.
• the means for emitting the carrier gas jet 71 may comprise an orifice 73 such as one of the following: pipe, conduit, tube, channel, hose, stem, duct, port, groove, passage, and tunnel.
• the shaping and transporting of the vapor plume 90 by the carrier gas jet 71 is achieved at least in part by physical and/or electrostatic interactions between the constituents of the vapor plume 90 and the carrier gas jet 71.
• the momentum of the carrier gas assists in the transport of the vapor plume toward the substrate.
• the carrier gas jet 71 substantially shields the anode 80 from contact with the vapor plume 90 thereby reducing accumulation of evaporant upon the anode 80.
• the carrier gas jets may introduce reactant gases.
• the reactant gases may form compounds with the vapor plume atoms or molecules during transport in the carrier gas jets while in a vapor phase.
• the reactant gases may form compounds by a chemical reaction on the deposition surface of the substrate.
• the reactant gases may form compounds with both modes: with the vapor plume during transport in the carrier gas jets while in a vapor phase; and by a chemical reaction on the deposition surface of the at least one substrate.
• the anode may be configured for creating a magnetic field and for guiding a magnetic flux such that the magnetic field lines in front of the anode are substantially parallel to its surface and radially directed thus forming a closed electron drift track in circumferential direction which is substantially parallel to the surface of the anode 80.
• the magnetic field facilitates an axial potential gradient for accelerating positive ions toward the substrate 20.

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• Chemical & Material Sciences (AREA)
• Engineering & Computer Science (AREA)
• Physics & Mathematics (AREA)
• Plasma & Fusion (AREA)
• Analytical Chemistry (AREA)
• Chemical Kinetics & Catalysis (AREA)
• Materials Engineering (AREA)
• Mechanical Engineering (AREA)
• Metallurgy (AREA)
• Organic Chemistry (AREA)
• Physical Vapour Deposition (AREA)

Applications Claiming Priority (3)

Publications (2)

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ID=44904109

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• 2011
  • 2011-05-06 EP EP11778439.7A patent/EP2572014A4/de not_active Withdrawn
  • 2011-05-06 CN CN201180022808.4A patent/CN103003467B/zh not_active Expired - Fee Related
  • 2011-05-06 WO PCT/US2011/035581 patent/WO2011140481A1/en not_active Ceased
  • 2011-05-06 SG SG2012081154A patent/SG185413A1/en unknown

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