EP2572014A4 - Gerichtete spotless-arc-dampfablagerung und entsprechendes verfahren dafür - Google Patents

Gerichtete spotless-arc-dampfablagerung und entsprechendes verfahren dafür

Info

Publication number
EP2572014A4
EP2572014A4 EP11778439.7A EP11778439A EP2572014A4 EP 2572014 A4 EP2572014 A4 EP 2572014A4 EP 11778439 A EP11778439 A EP 11778439A EP 2572014 A4 EP2572014 A4 EP 2572014A4
Authority
EP
European Patent Office
Prior art keywords
dvd
steam
step deposition
direct step
driven direct
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP11778439.7A
Other languages
English (en)
French (fr)
Other versions
EP2572014A1 (de
Inventor
Haydn N G Wadley
Goesta Mattausch
Frank-Holm Roegner
Bert Scheffel
Christoph Metzner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fraunhofer-Gesellschaft zur Förderung der Angewandten Forschung eV
UVA Licensing and Ventures Group
Original Assignee
Fraunhofer-Gesellschaft zur Förderung der Angewandten Forschung eV
University of Virginia Patent Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer-Gesellschaft zur Förderung der Angewandten Forschung eV, University of Virginia Patent Foundation filed Critical Fraunhofer-Gesellschaft zur Förderung der Angewandten Forschung eV
Publication of EP2572014A1 publication Critical patent/EP2572014A1/de
Publication of EP2572014A4 publication Critical patent/EP2572014A4/de
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C23C14/325—Electric arc evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228—Gas flow assisted PVD deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32055—Arc discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32321—Discharge generated by other radiation
    • H01J37/3233—Discharge generated by other radiation using charged particles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32614—Consumable cathodes for arc discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/31—Processing objects on a macro-scale
    • H01J2237/3132—Evaporating
    • H01J2237/3137—Plasma-assisted co-operation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
EP11778439.7A 2010-05-06 2011-05-06 Gerichtete spotless-arc-dampfablagerung und entsprechendes verfahren dafür Withdrawn EP2572014A4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US33184410P 2010-05-06 2010-05-06
US36671110P 2010-07-22 2010-07-22
PCT/US2011/035581 WO2011140481A1 (en) 2010-05-06 2011-05-06 Spotless arc directed vapor deposition (sa-dvd) and related method thereof

Publications (2)

Publication Number Publication Date
EP2572014A1 EP2572014A1 (de) 2013-03-27
EP2572014A4 true EP2572014A4 (de) 2016-03-02

Family

ID=44904109

Family Applications (1)

Application Number Title Priority Date Filing Date
EP11778439.7A Withdrawn EP2572014A4 (de) 2010-05-06 2011-05-06 Gerichtete spotless-arc-dampfablagerung und entsprechendes verfahren dafür

Country Status (4)

Country Link
EP (1) EP2572014A4 (de)
CN (1) CN103003467B (de)
SG (1) SG185413A1 (de)
WO (1) WO2011140481A1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014014541A2 (en) * 2012-04-27 2014-01-23 Directed Vapor Technologies International Wear resistant coatings and process for the application thereof
JP5832985B2 (ja) * 2012-11-09 2015-12-16 住友重機械工業株式会社 成膜装置
ITBO20120695A1 (it) * 2012-12-20 2014-06-21 Organic Spintronics S R L Dispositivo di deposizione a plasma impulsato
US20160208372A1 (en) 2013-08-27 2016-07-21 University Of Virginia Patent Foundation Lattice materials and structures and related methods thereof
EP3092324B1 (de) * 2014-01-09 2020-07-15 United Technologies Corporation Beschichtungsverfahren mit einem gasschirm
US10378861B2 (en) 2014-09-04 2019-08-13 University Of Virginia Patent Foundation Impulse mitigation systems for media impacts and related methods thereof
EP3012347B1 (de) * 2014-10-24 2018-12-05 United Technologies Corporation Abschwächung von nanopartikelbildung in einem abscheidungsverfahren
US10184759B2 (en) 2015-11-17 2019-01-22 University Of Virgina Patent Foundation Lightweight ballistic resistant anti-intrusion systems and related methods thereof
US11866816B2 (en) 2016-07-06 2024-01-09 Rtx Corporation Apparatus for use in coating process
EP3720984A4 (de) * 2017-12-06 2021-09-01 Arizona Thin Film Research LLC Systeme und verfahren zur generativen fertigung für die abscheidung von metall- und keramikmaterialien
US11056324B2 (en) * 2018-08-13 2021-07-06 Taiwan Semiconductor Manufacturing Co., Ltd. System and method for particle control in MRAM processing

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0372069A (ja) * 1989-08-12 1991-03-27 Nisshin Steel Co Ltd 化合物の金属帯への連続蒸着法
US5614273A (en) * 1993-10-27 1997-03-25 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung, E.V. Process and apparatus for plasma-activated electron beam vaporization
US5736073A (en) * 1996-07-08 1998-04-07 University Of Virginia Patent Foundation Production of nanometer particles by directed vapor deposition of electron beam evaporant
US20050266163A1 (en) * 2002-11-12 2005-12-01 Wortman David J Extremely strain tolerant thermal protection coating and related method and apparatus thereof
WO2010099218A1 (en) * 2009-02-24 2010-09-02 University Of Virginia Patent Foundation Coaxial hollow cathode plasma assisted directed vapor deposition and related method thereof

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5238546A (en) * 1990-03-01 1993-08-24 Balzers Aktiengesellschaft Method and apparatus for vaporizing materials by plasma arc discharge
US5478608A (en) * 1994-11-14 1995-12-26 Gorokhovsky; Vladimir I. Arc assisted CVD coating method and apparatus
JP4906169B2 (ja) * 1997-06-13 2012-03-28 エリコン・トレーディング・アクチェンゲゼルシャフト，トリュープバッハ 被覆工作物を製造するための方法、その方法の利用およびそのための装置
US6391164B1 (en) * 2000-06-23 2002-05-21 Isak I. Beilis Deposition of coatings and thin films using a vacuum arc with a non-consumable hot anode
US8084086B2 (en) * 2005-06-30 2011-12-27 University Of Virginia Patent Foundation Reliant thermal barrier coating system and related methods and apparatus of making the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0372069A (ja) * 1989-08-12 1991-03-27 Nisshin Steel Co Ltd 化合物の金属帯への連続蒸着法
US5614273A (en) * 1993-10-27 1997-03-25 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung, E.V. Process and apparatus for plasma-activated electron beam vaporization
US5736073A (en) * 1996-07-08 1998-04-07 University Of Virginia Patent Foundation Production of nanometer particles by directed vapor deposition of electron beam evaporant
US20050266163A1 (en) * 2002-11-12 2005-12-01 Wortman David J Extremely strain tolerant thermal protection coating and related method and apparatus thereof
WO2010099218A1 (en) * 2009-02-24 2010-09-02 University Of Virginia Patent Foundation Coaxial hollow cathode plasma assisted directed vapor deposition and related method thereof

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
GOEDICKE K ET AL: "Plasma-activated high rate electron beam evaporation using a spotless cathodic arc", SURFACE AND COATINGS TECHNOLOGY, ELSEVIER, AMSTERDAM, NL, vol. 68-69, 1 December 1994 (1994-12-01), pages 799 - 803, XP027004444, ISSN: 0257-8972, [retrieved on 19941201] *
See also references of WO2011140481A1 *

Also Published As

Publication number Publication date
CN103003467B (zh) 2015-04-01
SG185413A1 (en) 2012-12-28
CN103003467A (zh) 2013-03-27
WO2011140481A1 (en) 2011-11-10
EP2572014A1 (de) 2013-03-27

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