EP2711151A1 - Procédé de fabrication de wafers - Google Patents

Procédé de fabrication de wafers Download PDF

Info

Publication number
EP2711151A1
EP2711151A1 EP12185757.7A EP12185757A EP2711151A1 EP 2711151 A1 EP2711151 A1 EP 2711151A1 EP 12185757 A EP12185757 A EP 12185757A EP 2711151 A1 EP2711151 A1 EP 2711151A1
Authority
EP
European Patent Office
Prior art keywords
gluing
wafers
fluid
cutting
wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP12185757.7A
Other languages
German (de)
English (en)
Inventor
Juliane Heiber
Bernhard Hunziker
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Meyer Burger AG
Original Assignee
Meyer Burger AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Meyer Burger AG filed Critical Meyer Burger AG
Priority to EP12185757.7A priority Critical patent/EP2711151A1/fr
Priority to TW102134028A priority patent/TW201429662A/zh
Priority to PCT/IB2013/002093 priority patent/WO2014045108A1/fr
Publication of EP2711151A1 publication Critical patent/EP2711151A1/fr
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work

Definitions

  • heat of the cutting wire is efficiently transmitted to the gluing layer (adding heat from the wires). Since the wires are warm themselves during the cutting process, they may be placed just below the gluing layer to be dissolved so that their warmth deteriorates the glue as well (additionally to the effect of the de-gluing fluid).
  • Fig. 1 shows a wire saw 2 for cutting a plurality of wafers from an ingot 4 (also called brick or core).
  • the wire saw 2 comprises a support base 21 for positioning ingot 4 with respect to a wire web 18 which is formed by a cutting wire.
  • Ingot 4 is by gluing attached to a beam 19 (also called sacrificial substrate), which in turn is attached to a fixture attachment 20 usually made of metal.
  • the beam 19 is mounted to the fixture attachment 20 which in turn is detachably mounted to the support base 21 of the wire saw 2.
  • the ingot 4 is pushed through the wire web 18, causing the cutting wire to bend downwards (not shown). Because of this bow of the cutting wire, the top edges of the ingot are cut before the middle part of the ingot is completely cut. It is the purpose of the sacrificial substrate or beam 19 to keep the fixture attachment 20 at a distance of the ingot 4, so that the fixture attachment 20 is not cut.
  • the beam 19 - which is relatively inexpensive - is replaced after each cut.
  • the de-gluing fluid 7 may be a heated cutting fluid also used for/during the cutting step to wet the wire web 18.

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
EP12185757.7A 2012-09-24 2012-09-24 Procédé de fabrication de wafers Withdrawn EP2711151A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP12185757.7A EP2711151A1 (fr) 2012-09-24 2012-09-24 Procédé de fabrication de wafers
TW102134028A TW201429662A (zh) 2012-09-24 2013-09-23 晶圓製造方法
PCT/IB2013/002093 WO2014045108A1 (fr) 2012-09-24 2013-09-23 Procédé de fabrication de plaquettes

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP12185757.7A EP2711151A1 (fr) 2012-09-24 2012-09-24 Procédé de fabrication de wafers

Publications (1)

Publication Number Publication Date
EP2711151A1 true EP2711151A1 (fr) 2014-03-26

Family

ID=47143518

Family Applications (1)

Application Number Title Priority Date Filing Date
EP12185757.7A Withdrawn EP2711151A1 (fr) 2012-09-24 2012-09-24 Procédé de fabrication de wafers

Country Status (3)

Country Link
EP (1) EP2711151A1 (fr)
TW (1) TW201429662A (fr)
WO (1) WO2014045108A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI777451B (zh) * 2021-03-15 2022-09-11 環球晶圓股份有限公司 晶棒切片裝置及晶棒切片方法
WO2022218843A1 (fr) * 2021-04-15 2022-10-20 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e. V. Procédé de fixation d'un bloc de matériau pour l'usinage mécanique

Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07153724A (ja) 1993-11-29 1995-06-16 Sharp Corp シリコンインゴットのスライス加工方法
JPH0919921A (ja) 1995-07-07 1997-01-21 Tokyo Seimitsu Co Ltd ワイヤソー
JPH09207126A (ja) 1996-01-31 1997-08-12 Nippei Toyama Corp ワイヤソーのためのワーク支持装置、清浄方法及びワイヤソー
DE19900671C2 (de) 1999-01-11 2002-04-25 Fraunhofer Ges Forschung Verfahren und Vorrichtung zum Vereinzeln von scheibenförmigen Substraten, insbesondere zur Waferherstellung
DE102004058194A1 (de) 2004-12-02 2005-08-11 Siltronic Ag Sägeleiste und Verfahren zum Abtrennen von Halbleiterscheiben von einem Kristallstück
DE102005028112A1 (de) * 2005-06-13 2006-12-21 Schmid Technology Systems Gmbh Verfahren zur Positionierung und Lageerhaltung von Substraten, insbesondere von dünnen Siliziumwafern nach dem Drahtsägen zu deren Vereinzelung
EP2110216A1 (fr) 2008-04-14 2009-10-21 Applied Materials, Inc. Dispositif de scie à fil et son procédé de fonctionnement
EP2153960A2 (fr) 2008-08-14 2010-02-17 Wacker Schott Solar Gmbh Support, procédé et dispositif de fabrication de tranches de silicium, ainsi que l'utilisation de la tranche de silicium fabriquée
WO2010133682A1 (fr) 2009-05-22 2010-11-25 Gebr. Schmid Gmbh & Co. Support pour un lingot de silicium
WO2011009927A1 (fr) 2009-07-23 2011-01-27 Gebr. Schmid Gmbh & Co. Dispositif de nettoyage de substrats sur un support
WO2011009917A2 (fr) 2009-07-23 2011-01-27 Gebr. Schmid Gmbh & Co. Procédé et dispositif pour nettoyer des substrats sur un support
DE102010050897A1 (de) 2010-07-09 2012-01-12 Interpane Entwicklungs-Und Beratungsgesellschaft Mbh Trägervorrichtung und Verfahren zum Schneiden eines an der Trägervorrichtung befestigten Materialblocks
WO2012007381A1 (fr) 2010-07-15 2012-01-19 Gebr. Schmid Gmbh & Co. Support pour bloc de silicium, ensemble support comprenant ce support et procédé de fabrication de cet ensemble support
DE102010052635A1 (de) 2010-11-29 2012-05-31 Rena Gmbh Halte-Reinigungsvorrichtung und Verfahren zum abschnittsweisen Reinigen gesägter Wafer

Patent Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07153724A (ja) 1993-11-29 1995-06-16 Sharp Corp シリコンインゴットのスライス加工方法
JPH0919921A (ja) 1995-07-07 1997-01-21 Tokyo Seimitsu Co Ltd ワイヤソー
JPH09207126A (ja) 1996-01-31 1997-08-12 Nippei Toyama Corp ワイヤソーのためのワーク支持装置、清浄方法及びワイヤソー
DE19900671C2 (de) 1999-01-11 2002-04-25 Fraunhofer Ges Forschung Verfahren und Vorrichtung zum Vereinzeln von scheibenförmigen Substraten, insbesondere zur Waferherstellung
DE102004058194A1 (de) 2004-12-02 2005-08-11 Siltronic Ag Sägeleiste und Verfahren zum Abtrennen von Halbleiterscheiben von einem Kristallstück
DE102005028112A1 (de) * 2005-06-13 2006-12-21 Schmid Technology Systems Gmbh Verfahren zur Positionierung und Lageerhaltung von Substraten, insbesondere von dünnen Siliziumwafern nach dem Drahtsägen zu deren Vereinzelung
EP2110216A1 (fr) 2008-04-14 2009-10-21 Applied Materials, Inc. Dispositif de scie à fil et son procédé de fonctionnement
EP2153960A2 (fr) 2008-08-14 2010-02-17 Wacker Schott Solar Gmbh Support, procédé et dispositif de fabrication de tranches de silicium, ainsi que l'utilisation de la tranche de silicium fabriquée
WO2010133682A1 (fr) 2009-05-22 2010-11-25 Gebr. Schmid Gmbh & Co. Support pour un lingot de silicium
WO2011009927A1 (fr) 2009-07-23 2011-01-27 Gebr. Schmid Gmbh & Co. Dispositif de nettoyage de substrats sur un support
WO2011009917A2 (fr) 2009-07-23 2011-01-27 Gebr. Schmid Gmbh & Co. Procédé et dispositif pour nettoyer des substrats sur un support
DE102010050897A1 (de) 2010-07-09 2012-01-12 Interpane Entwicklungs-Und Beratungsgesellschaft Mbh Trägervorrichtung und Verfahren zum Schneiden eines an der Trägervorrichtung befestigten Materialblocks
WO2012007381A1 (fr) 2010-07-15 2012-01-19 Gebr. Schmid Gmbh & Co. Support pour bloc de silicium, ensemble support comprenant ce support et procédé de fabrication de cet ensemble support
DE102010052635A1 (de) 2010-11-29 2012-05-31 Rena Gmbh Halte-Reinigungsvorrichtung und Verfahren zum abschnittsweisen Reinigen gesägter Wafer

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI777451B (zh) * 2021-03-15 2022-09-11 環球晶圓股份有限公司 晶棒切片裝置及晶棒切片方法
WO2022218843A1 (fr) * 2021-04-15 2022-10-20 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e. V. Procédé de fixation d'un bloc de matériau pour l'usinage mécanique

Also Published As

Publication number Publication date
TW201429662A (zh) 2014-08-01
WO2014045108A1 (fr) 2014-03-27

Similar Documents

Publication Publication Date Title
US8261730B2 (en) In-situ wafer processing system and method
KR100902626B1 (ko) 공작물의 쏘잉 방법 및 장치
CN204658729U (zh) 晶片清洁系统和丝锯
TWI278027B (en) Substrate slicing method
CN1816908B (zh) 芯片焊接
KR101408552B1 (ko) 박형 실리콘 로드의 제조를 위한 방법 및 장치
KR20160032678A (ko) SiC 잉곳의 슬라이스 방법
KR101916518B1 (ko) 기판 처리 방법
WO2010058389A1 (fr) Procédé et dispositif pour faciliter la séparation de gaufrettes tranchées
TW200950909A (en) Mounting plate for a wire sawing device, wire sawing device comprising the same, and wire sawing process carried out by the device
TW201101525A (en) Method for manufacturing integrated thin-film solar cell
EP2711151A1 (fr) Procédé de fabrication de wafers
KR102163438B1 (ko) 절삭 방법
TWI589419B (zh) 載體裝置以及將固定在此載體裝置上的材料塊切割的方法
TWI742276B (zh) 晶片的製造方法
TWI485760B (zh) 將薄片特別是晶圓從脆材料切離的方法與裝置
JPH10340869A (ja) マルチ切断ワイヤソーのウェーハ回収方法
JP6325175B2 (ja) 平行化切断ビームを用いて超硬度材料のプレートを作製する方法
EP2711978A1 (fr) Méthode de fabrication de plaquettes
CN104183476B (zh) 切削残余部除去装置
CN113574646A (zh) 用于碎裂多个晶圆组件的系统
JP3716555B2 (ja) マルチ切断ワイヤソーの被加工物切断方法
JP2003146678A (ja) 脆性材料の切断方法及び切断装置
CN102875011A (zh) 石英晶片化砣装置
RU2429964C1 (ru) Способ проволочной резки кремниевого слитка на пластины

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

AX Request for extension of the european patent

Extension state: BA ME

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20140929