EP2780945A4 - Dispositifs et procédés de charge inclinée optique - Google Patents

Dispositifs et procédés de charge inclinée optique

Info

Publication number
EP2780945A4
EP2780945A4 EP12850478.4A EP12850478A EP2780945A4 EP 2780945 A4 EP2780945 A4 EP 2780945A4 EP 12850478 A EP12850478 A EP 12850478A EP 2780945 A4 EP2780945 A4 EP 2780945A4
Authority
EP
European Patent Office
Prior art keywords
sliced
optical
loading devices
loading
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP12850478.4A
Other languages
German (de)
English (en)
Other versions
EP2780945A1 (fr
Inventor
Gabriel Walter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Quantum Electro Opto Systems Sdn Bhd
Original Assignee
Quantum Electro Opto Systems Sdn Bhd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Quantum Electro Opto Systems Sdn Bhd filed Critical Quantum Electro Opto Systems Sdn Bhd
Publication of EP2780945A1 publication Critical patent/EP2780945A1/fr
Publication of EP2780945A4 publication Critical patent/EP2780945A4/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
EP12850478.4A 2011-11-14 2012-11-13 Dispositifs et procédés de charge inclinée optique Withdrawn EP2780945A4 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161629175P 2011-11-14 2011-11-14
US201161629181P 2011-11-14 2011-11-14
PCT/US2012/064778 WO2013074496A1 (fr) 2011-11-14 2012-11-13 Dispositifs et procédés de charge inclinée optique

Publications (2)

Publication Number Publication Date
EP2780945A1 EP2780945A1 (fr) 2014-09-24
EP2780945A4 true EP2780945A4 (fr) 2015-11-04

Family

ID=48430076

Family Applications (1)

Application Number Title Priority Date Filing Date
EP12850478.4A Withdrawn EP2780945A4 (fr) 2011-11-14 2012-11-13 Dispositifs et procédés de charge inclinée optique

Country Status (4)

Country Link
EP (1) EP2780945A4 (fr)
CN (1) CN103930994A (fr)
TW (1) TW201332238A (fr)
WO (1) WO2013074496A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105870166B (zh) * 2016-04-22 2019-02-12 杭州立昂东芯微电子有限公司 一种铟镓磷异质结双极型晶体管及其制造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4723250A (en) * 1985-12-20 1988-02-02 Ga Technologies Inc. Solid state cyclotron laser
US4845514A (en) * 1986-09-19 1989-07-04 Shinko Electric Co., Ltd. Thermal transfer type line printer capable of setting printing density by command supplied from an external device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6593589B1 (en) * 1998-01-30 2003-07-15 The University Of New Mexico Semiconductor nitride structures
US6756325B2 (en) * 2002-05-07 2004-06-29 Agilent Technologies, Inc. Method for producing a long wavelength indium gallium arsenide nitride(InGaAsN) active region
US7244997B2 (en) * 2003-07-08 2007-07-17 President And Fellows Of Harvard College Magneto-luminescent transducer
JP2007066981A (ja) * 2005-08-29 2007-03-15 Toshiba Corp 半導体装置
WO2007121524A1 (fr) * 2006-04-20 2007-11-01 Epitactix Pty Ltd. Procédé de fabrication et structures résultantes pour dispositifs semi-conducteurs
US8509274B2 (en) * 2009-01-08 2013-08-13 Quantum Electro Opto Systems Sdn. Bhd. Light emitting and lasing semiconductor methods and devices
JP5653934B2 (ja) * 2009-01-08 2015-01-14 ザ ボード オブ トラスティース オブ ザ ユニバーシティ オブ イリノイ 発光並びにレーザ半導体素子および方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4723250A (en) * 1985-12-20 1988-02-02 Ga Technologies Inc. Solid state cyclotron laser
US4845514A (en) * 1986-09-19 1989-07-04 Shinko Electric Co., Ltd. Thermal transfer type line printer capable of setting printing density by command supplied from an external device

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
CHAO-HSIN WU ET AL: "4-GHz Modulation Bandwidth of Integrated 22 LED Array", IEEE PHOTONICS TECHNOLOGY LETTERS, IEEE SERVICE CENTER, PISCATAWAY, NJ, US, vol. 21, no. 24, 15 December 2009 (2009-12-15), pages 1834 - 1836, XP011284612, ISSN: 1041-1135, DOI: 10.1109/LPT.2009.2034385 *
FENG M ET AL: "Tunnel junction transistor laser", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS, US, vol. 94, no. 4, 29 January 2009 (2009-01-29), pages 41118 - 41118, XP012118719, ISSN: 0003-6951, DOI: 10.1063/1.3077020 *
See also references of WO2013074496A1 *
WALTER G ET AL: "Tilted-charge high speed (7 GHz) light emitting diode", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS, US, vol. 94, no. 23, 12 June 2009 (2009-06-12), pages 231125 - 231125, XP012121576, ISSN: 0003-6951, DOI: 10.1063/1.3154565 *

Also Published As

Publication number Publication date
WO2013074496A1 (fr) 2013-05-23
CN103930994A (zh) 2014-07-16
EP2780945A1 (fr) 2014-09-24
TW201332238A (zh) 2013-08-01

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Ipc: H01L 29/737 20060101AFI20150604BHEP

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