EP2843716A3 - Leuchtdiode mit strukturierter Phosphorumwandlungsschicht - Google Patents

Leuchtdiode mit strukturierter Phosphorumwandlungsschicht Download PDF

Info

Publication number
EP2843716A3
EP2843716A3 EP20140177879 EP14177879A EP2843716A3 EP 2843716 A3 EP2843716 A3 EP 2843716A3 EP 20140177879 EP20140177879 EP 20140177879 EP 14177879 A EP14177879 A EP 14177879A EP 2843716 A3 EP2843716 A3 EP 2843716A3
Authority
EP
European Patent Office
Prior art keywords
light emitting
emitting diode
conversion layer
layer light
phosphor conversion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP20140177879
Other languages
English (en)
French (fr)
Other versions
EP2843716A2 (de
Inventor
Stephen P. Denbaars
Shuji Nakamura
Natalie N. Fellows
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of California
University of California Berkeley
University of California San Diego UCSD
Original Assignee
University of California
University of California Berkeley
University of California San Diego UCSD
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=39402256&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=EP2843716(A3) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by University of California, University of California Berkeley, University of California San Diego UCSD filed Critical University of California
Publication of EP2843716A2 publication Critical patent/EP2843716A2/de
Publication of EP2843716A3 publication Critical patent/EP2843716A3/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H10H20/8162—Current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8516—Wavelength conversion means having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer or wavelength conversion layer with a concentration gradient
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8515—Wavelength conversion means not being in contact with the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/882—Scattering means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07551—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting
    • H10W72/07554—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting changes in dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)
EP20140177879 2006-11-15 2007-11-15 Leuchtdiode mit strukturierter Phosphorumwandlungsschicht Withdrawn EP2843716A3 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US86602406P 2006-11-15 2006-11-15
EP07862038.2A EP2087563B1 (de) 2006-11-15 2007-11-15 Leuchtdiode mit strukturierter leuchtstoff-umwandlungsschicht

Related Parent Applications (2)

Application Number Title Priority Date Filing Date
EP07862038.2A Division-Into EP2087563B1 (de) 2006-11-15 2007-11-15 Leuchtdiode mit strukturierter leuchtstoff-umwandlungsschicht
EP07862038.2A Division EP2087563B1 (de) 2006-11-15 2007-11-15 Leuchtdiode mit strukturierter leuchtstoff-umwandlungsschicht

Publications (2)

Publication Number Publication Date
EP2843716A2 EP2843716A2 (de) 2015-03-04
EP2843716A3 true EP2843716A3 (de) 2015-04-29

Family

ID=39402256

Family Applications (2)

Application Number Title Priority Date Filing Date
EP20140177879 Withdrawn EP2843716A3 (de) 2006-11-15 2007-11-15 Leuchtdiode mit strukturierter Phosphorumwandlungsschicht
EP07862038.2A Active EP2087563B1 (de) 2006-11-15 2007-11-15 Leuchtdiode mit strukturierter leuchtstoff-umwandlungsschicht

Family Applications After (1)

Application Number Title Priority Date Filing Date
EP07862038.2A Active EP2087563B1 (de) 2006-11-15 2007-11-15 Leuchtdiode mit strukturierter leuchtstoff-umwandlungsschicht

Country Status (4)

Country Link
US (3) US8860051B2 (de)
EP (2) EP2843716A3 (de)
JP (2) JP2010510659A (de)
WO (1) WO2008060586A2 (de)

Families Citing this family (126)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8294166B2 (en) 2006-12-11 2012-10-23 The Regents Of The University Of California Transparent light emitting diodes
US8860051B2 (en) 2006-11-15 2014-10-14 The Regents Of The University Of California Textured phosphor conversion layer light emitting diode
US7781789B2 (en) * 2006-11-15 2010-08-24 The Regents Of The University Of California Transparent mirrorless light emitting diode
US10655792B2 (en) * 2014-09-28 2020-05-19 Zhejiang Super Lighting Electric Appliance Co., Ltd. LED bulb lamp
US20090121250A1 (en) * 2006-11-15 2009-05-14 Denbaars Steven P High light extraction efficiency light emitting diode (led) using glass packaging
WO2008060584A2 (en) * 2006-11-15 2008-05-22 The Regents Of The University Of California High light extraction efficiency sphere led
WO2008073384A1 (en) * 2006-12-11 2008-06-19 The Regents Of University Of California Non-polar and semi-polar light emitting devices
WO2008073385A1 (en) 2006-12-11 2008-06-19 The Regents Of The University Of California Metalorganic chemical vapor deposition (mocvd) growth of high performance non-polar iii-nitride optical devices
JP2010534943A (ja) 2007-07-26 2010-11-11 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア Ｐ型表面を有する発光ダイオード
KR101383357B1 (ko) * 2007-08-27 2014-04-10 엘지이노텍 주식회사 발광 소자 패키지 및 그 제조방법
DE102007046849B4 (de) * 2007-09-29 2014-11-06 Advanced Micro Devices, Inc. Verfahren zur Herstellung von Gateelektrodenstrukturen mit großem ε nach der Transistorherstellung
US7897985B2 (en) * 2008-03-14 2011-03-01 Osram Sylvania LED light engine kernel and method of making the kernel
JP5307881B2 (ja) 2008-03-26 2013-10-02 パナソニック株式会社 半導体発光装置
US8105853B2 (en) * 2008-06-27 2012-01-31 Bridgelux, Inc. Surface-textured encapsulations for use with light emitting diodes
TWI384651B (zh) * 2008-08-20 2013-02-01 Au Optronics Corp 發光二極體結構及其製造方法
JP2010062493A (ja) * 2008-09-08 2010-03-18 Stanley Electric Co Ltd 半導体発光素子および半導体発光素子の製造方法
US7825427B2 (en) * 2008-09-12 2010-11-02 Bridgelux, Inc. Method and apparatus for generating phosphor film with textured surface
JP5431706B2 (ja) * 2008-10-01 2014-03-05 ミネベア株式会社 発光装置
US8329060B2 (en) 2008-10-22 2012-12-11 General Electric Company Blue-green and green phosphors for lighting applications
US8703016B2 (en) 2008-10-22 2014-04-22 General Electric Company Phosphor materials and related devices
EP2399067B1 (de) * 2009-02-18 2015-11-04 Osram Sylvania Inc. Lichtquelle mit leds, lichtleiter und reflektor
JP5487204B2 (ja) * 2009-05-15 2014-05-07 株式会社小糸製作所 発光モジュール、発光モジュールの製造方法、および灯具ユニット
DE102009023351A1 (de) 2009-05-29 2010-12-02 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
WO2010143093A1 (en) 2009-06-04 2010-12-16 Koninklijke Philips Electronics N.V. Efficient light emitting device and method for manufacturing such a device
WO2010145716A1 (de) * 2009-06-19 2010-12-23 Osram Gesellschaft mit beschränkter Haftung Konversions-led mit erhöhter stabilität und verfahren zu ihrer herstellung
TWI396310B (zh) * 2009-10-02 2013-05-11 億光電子工業股份有限公司 發光二極體結構
US8783915B2 (en) 2010-02-11 2014-07-22 Bridgelux, Inc. Surface-textured encapsulations for use with light emitting diodes
US8384105B2 (en) * 2010-03-19 2013-02-26 Micron Technology, Inc. Light emitting diodes with enhanced thermal sinking and associated methods of operation
JP5497520B2 (ja) * 2010-04-14 2014-05-21 株式会社小糸製作所 発光モジュールおよび光波長変換部材
JP5331051B2 (ja) * 2010-04-21 2013-10-30 パナソニック株式会社 発光素子
KR101735670B1 (ko) * 2010-07-13 2017-05-15 엘지이노텍 주식회사 발광 소자
CN103026126B (zh) * 2010-09-21 2015-02-25 日本电气株式会社 涂覆荧光体的发光装置
DE102010049312B4 (de) 2010-10-22 2023-08-03 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines Konversionsplättchens und Konversionsplättchen
US8847481B2 (en) * 2010-11-08 2014-09-30 Lg Innotek Co., Ltd. Lighting device comprising photoluminescent plate
US9899329B2 (en) 2010-11-23 2018-02-20 X-Celeprint Limited Interconnection structures and methods for transfer-printed integrated circuit elements with improved interconnection alignment tolerance
US8314566B2 (en) 2011-02-22 2012-11-20 Quarkstar Llc Solid state lamp using light emitting strips
US8934259B2 (en) 2011-06-08 2015-01-13 Semprius, Inc. Substrates with transferable chiplets
CN102916004A (zh) * 2011-07-31 2013-02-06 华新丽华股份有限公司 发光二极管装置
TW201306323A (zh) 2011-07-31 2013-02-01 Walsin Lihwa Corp 發光二極體裝置
DE102011114641B4 (de) * 2011-09-30 2021-08-12 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements
KR101969334B1 (ko) * 2011-11-16 2019-04-17 엘지이노텍 주식회사 발광 소자 및 이를 구비한 발광 장치
TW201327926A (zh) * 2011-12-30 2013-07-01 Ind Tech Res Inst 光轉換結構和其應用之發光二極體的封裝結構
US9515238B2 (en) * 2012-02-16 2016-12-06 Oculus Vr, Llc Micro-LED array with filters
KR101286211B1 (ko) * 2012-02-16 2013-07-15 고려대학교 산학협력단 발광 소자 제조 방법 및 이를 이용하여 제조된 발광 소자
WO2013148955A1 (en) * 2012-03-28 2013-10-03 Sensor Electronic Technology, Inc. Light emitting device substrate with inclined sidewalls
US10096742B2 (en) 2012-03-28 2018-10-09 Sensor Electronic Technology, Inc. Light emitting device substrate with inclined sidewalls
KR101364170B1 (ko) * 2012-06-05 2014-02-20 포항공과대학교 산학협력단 백색 발광 다이오드
TW201347238A (zh) 2012-07-11 2013-11-16 Walsin Lihwa Corp 發光二極體裝置
DE102012215113B4 (de) * 2012-08-24 2022-02-03 Pictiva Displays International Limited Organische Leuchtdiode und Verfahren zum Betreiben einer organischen Leuchtdiode
JP2014082401A (ja) * 2012-10-18 2014-05-08 Ushio Inc 蛍光光源装置
US10125971B2 (en) * 2013-02-19 2018-11-13 Michael Graziano LED lamp integrated to electric fan
JP2015015418A (ja) * 2013-07-08 2015-01-22 シャープ株式会社 半導体発光装置
KR102076243B1 (ko) * 2013-09-04 2020-02-12 엘지이노텍 주식회사 발광 소자 패키지
KR20150039475A (ko) * 2013-10-02 2015-04-10 엘지이노텍 주식회사 발광소자
JP6438978B2 (ja) 2014-06-18 2018-12-19 エックス−セレプリント リミテッドＸ−Ｃｅｌｅｐｒｉｎｔ Ｌｉｍｉｔｅｄ マイクロ組立ｌｅｄディスプレイ
KR20170047324A (ko) 2014-08-26 2017-05-04 엑스-셀레프린트 리미티드 마이크로 어셈블링된 하이브리드 디스플레이들 및 조명 엘리먼트들
US9991163B2 (en) 2014-09-25 2018-06-05 X-Celeprint Limited Small-aperture-ratio display with electrical component
US9799719B2 (en) 2014-09-25 2017-10-24 X-Celeprint Limited Active-matrix touchscreen
US9818725B2 (en) 2015-06-01 2017-11-14 X-Celeprint Limited Inorganic-light-emitter display with integrated black matrix
US9799261B2 (en) 2014-09-25 2017-10-24 X-Celeprint Limited Self-compensating circuit for faulty display pixels
US11525547B2 (en) 2014-09-28 2022-12-13 Zhejiang Super Lighting Electric Appliance Co., Ltd LED light bulb with curved filament
US11997768B2 (en) 2014-09-28 2024-05-28 Zhejiang Super Lighting Electric Appliance Co., Ltd LED filament and LED light bulb
US11085591B2 (en) 2014-09-28 2021-08-10 Zhejiang Super Lighting Electric Appliance Co., Ltd LED light bulb with curved filament
US11073248B2 (en) 2014-09-28 2021-07-27 Zhejiang Super Lighting Electric Appliance Co., Ltd. LED bulb lamp
US11543083B2 (en) 2014-09-28 2023-01-03 Zhejiang Super Lighting Electric Appliance Co., Ltd LED filament and LED light bulb
US12007077B2 (en) 2014-09-28 2024-06-11 Zhejiang Super Lighting Electric Appliance Co., Ltd. LED filament and LED light bulb
US11686436B2 (en) 2014-09-28 2023-06-27 Zhejiang Super Lighting Electric Appliance Co., Ltd LED filament and light bulb using LED filament
US11421827B2 (en) 2015-06-19 2022-08-23 Zhejiang Super Lighting Electric Appliance Co., Ltd LED filament and LED light bulb
US9871345B2 (en) 2015-06-09 2018-01-16 X-Celeprint Limited Crystalline color-conversion device
US11061276B2 (en) 2015-06-18 2021-07-13 X Display Company Technology Limited Laser array display
US10133426B2 (en) 2015-06-18 2018-11-20 X-Celeprint Limited Display with micro-LED front light
KR102315124B1 (ko) * 2015-07-02 2021-10-20 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자 패키지
US10255834B2 (en) 2015-07-23 2019-04-09 X-Celeprint Limited Parallel redundant chiplet system for controlling display pixels
US10380930B2 (en) 2015-08-24 2019-08-13 X-Celeprint Limited Heterogeneous light emitter display system
TWI591864B (zh) * 2015-08-26 2017-07-11 廣科精密股份有限公司 發光裝置及其製備方法
US10230048B2 (en) 2015-09-29 2019-03-12 X-Celeprint Limited OLEDs for micro transfer printing
US10066819B2 (en) 2015-12-09 2018-09-04 X-Celeprint Limited Micro-light-emitting diode backlight system
US9786646B2 (en) 2015-12-23 2017-10-10 X-Celeprint Limited Matrix addressed device repair
DE102016101442B4 (de) 2016-01-27 2025-03-13 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Konversionselement und strahlungsemittierendes Halbleiterbauelement mit einem solchen Konversionselement
US10200013B2 (en) 2016-02-18 2019-02-05 X-Celeprint Limited Micro-transfer-printed acoustic wave filter device
US10361677B2 (en) 2016-02-18 2019-07-23 X-Celeprint Limited Transverse bulk acoustic wave filter
US10109753B2 (en) 2016-02-19 2018-10-23 X-Celeprint Limited Compound micro-transfer-printed optical filter device
TWI710061B (zh) 2016-02-25 2020-11-11 愛爾蘭商艾克斯展示公司技術有限公司 有效率地微轉印微型裝置於大尺寸基板上
US10150326B2 (en) 2016-02-29 2018-12-11 X-Celeprint Limited Hybrid document with variable state
US10150325B2 (en) 2016-02-29 2018-12-11 X-Celeprint Limited Hybrid banknote with electronic indicia
US10193025B2 (en) 2016-02-29 2019-01-29 X-Celeprint Limited Inorganic LED pixel structure
US10153257B2 (en) 2016-03-03 2018-12-11 X-Celeprint Limited Micro-printed display
US10153256B2 (en) 2016-03-03 2018-12-11 X-Celeprint Limited Micro-transfer printable electronic component
DE102016105988A1 (de) * 2016-04-01 2017-10-05 Osram Opto Semiconductors Gmbh Konverter zur teilweisen Konversion einer Primärstrahlung und lichtemittierendes Bauelement
US10199546B2 (en) 2016-04-05 2019-02-05 X-Celeprint Limited Color-filter device
US10008483B2 (en) 2016-04-05 2018-06-26 X-Celeprint Limited Micro-transfer printed LED and color filter structure
US10198890B2 (en) 2016-04-19 2019-02-05 X-Celeprint Limited Hybrid banknote with electronic indicia using near-field-communications
US9997102B2 (en) 2016-04-19 2018-06-12 X-Celeprint Limited Wirelessly powered display and system
US9997501B2 (en) 2016-06-01 2018-06-12 X-Celeprint Limited Micro-transfer-printed light-emitting diode device
JP2017220479A (ja) * 2016-06-03 2017-12-14 株式会社ディスコ 発光ダイオードチップの製造方法
JP2017220478A (ja) * 2016-06-03 2017-12-14 株式会社ディスコ 発光ダイオードチップの製造方法及び発光ダイオードチップ
US11137641B2 (en) 2016-06-10 2021-10-05 X Display Company Technology Limited LED structure with polarized light emission
JP2017224727A (ja) * 2016-06-15 2017-12-21 株式会社ディスコ 発光ダイオードチップの製造方法及び発光ダイオードチップ
JP2018010900A (ja) * 2016-07-11 2018-01-18 株式会社ディスコ 発光ダイオードチップの製造方法
US9980341B2 (en) 2016-09-22 2018-05-22 X-Celeprint Limited Multi-LED components
US10782002B2 (en) 2016-10-28 2020-09-22 X Display Company Technology Limited LED optical components
US10347168B2 (en) 2016-11-10 2019-07-09 X-Celeprint Limited Spatially dithered high-resolution
US10395966B2 (en) 2016-11-15 2019-08-27 X-Celeprint Limited Micro-transfer-printable flip-chip structures and methods
US10600671B2 (en) 2016-11-15 2020-03-24 X-Celeprint Limited Micro-transfer-printable flip-chip structures and methods
WO2018091459A1 (en) 2016-11-15 2018-05-24 X-Celeprint Limited Micro-transfer-printable flip-chip structures and methods
US10438859B2 (en) 2016-12-19 2019-10-08 X-Celeprint Limited Transfer printed device repair
US20180182934A1 (en) * 2016-12-22 2018-06-28 Osram Opto Semiconductors Gmbh Light Emitting Unit
KR102737501B1 (ko) 2017-01-31 2024-12-04 삼성전자주식회사 Led장치 및 이를 이용한 led램프
US10396137B2 (en) 2017-03-10 2019-08-27 X-Celeprint Limited Testing transfer-print micro-devices on wafer
DE102017002333A1 (de) 2017-03-13 2018-09-13 Azur Space Solar Power Gmbh Leuchtdiode
JP2018155968A (ja) * 2017-03-17 2018-10-04 日亜化学工業株式会社 透光性部材の製造方法及び発光装置の製造方法
US11024608B2 (en) 2017-03-28 2021-06-01 X Display Company Technology Limited Structures and methods for electrical connection of micro-devices and substrates
JP2018170333A (ja) * 2017-03-29 2018-11-01 株式会社東芝 半導体装置及びその製造方法
JP2018186166A (ja) * 2017-04-25 2018-11-22 株式会社ディスコ 発光ダイオードチップの製造方法及び発光ダイオードチップ
CN107170901B (zh) * 2017-05-12 2019-09-06 京东方科技集团股份有限公司 一种子像素结构、像素结构、显示面板及显示装置
KR102430500B1 (ko) 2017-05-30 2022-08-08 삼성전자주식회사 반도체 발광소자 및 이를 이용한 led 모듈
US10836200B2 (en) * 2017-11-13 2020-11-17 X Display Company Technology Limited Rigid micro-modules with ILED and light conductor
US10982048B2 (en) 2018-04-17 2021-04-20 Jiaxing Super Lighting Electric Appliance Co., Ltd Organosilicon-modified polyimide resin composition and use thereof
US10964852B2 (en) 2018-04-24 2021-03-30 Samsung Electronics Co., Ltd. LED module and LED lamp including the same
US20200220054A1 (en) 2019-01-07 2020-07-09 Glint Photonics, Inc. Antireflective structures for light emitting diodes
US11592166B2 (en) 2020-05-12 2023-02-28 Feit Electric Company, Inc. Light emitting device having improved illumination and manufacturing flexibility
KR102905089B1 (ko) * 2020-06-30 2025-12-29 엘지이노텍 주식회사 조명 장치 및 이를 포함하는 램프
US11549680B2 (en) 2020-07-08 2023-01-10 Feit Electric Company, Inc. Mirror with light emitting elements and stand
US11876042B2 (en) 2020-08-03 2024-01-16 Feit Electric Company, Inc. Omnidirectional flexible light emitting device
WO2023136880A1 (en) * 2022-01-13 2023-07-20 Ohio State Innovation Foundation Photonic materials
DE102022104459A1 (de) * 2022-02-24 2023-08-24 Ams-Osram International Gmbh Optoelektronische leuchtvorrichtung und verfahren

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1117223A (ja) * 1997-06-25 1999-01-22 Toshiba Corp 窒化ガリウム系半導体発光素子および発光装置
US20040164311A1 (en) * 2003-02-20 2004-08-26 Toyoda Gosei Co., Ltd. Light emitting apparatus
US20050211997A1 (en) * 2004-03-23 2005-09-29 Toyoda Gosei Co., Ltd. Solid-state element and solid-state element device
US20050224830A1 (en) * 2004-04-09 2005-10-13 Blonder Greg E Illumination devices comprising white light emitting diodes and diode arrays and method and apparatus for making them
US20060145170A1 (en) * 2005-01-03 2006-07-06 Samsung Electro-Mechanics Co., Ltd. Nitride based semiconductor light emitting device
US20060164836A1 (en) * 2003-10-31 2006-07-27 Yoshinobu Suehiro Light emitting apparatus

Family Cites Families (155)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3607463A (en) * 1968-08-02 1971-09-21 Varian Associates Method for growing tin-doped n-type epitaxial gallium arsenide from the liquid state
JPS5324300Y2 (de) 1973-01-26 1978-06-22
US3999280A (en) * 1973-06-25 1976-12-28 Amp Incorporated Narrow lead contact for automatic face down bonding of electronic chips
US4026692A (en) * 1975-12-15 1977-05-31 Corning Glass Works Press molding optical articles from acid hydrated glasses
JPS592193B2 (ja) * 1976-08-19 1984-01-17 岡谷電機産業株式会社 パイロツトランプの製造方法
US4497974A (en) * 1982-11-22 1985-02-05 Exxon Research & Engineering Co. Realization of a thin film solar cell with a detached reflector
US5416870A (en) * 1993-12-03 1995-05-16 Motorola, Inc. Optoelectronic interface device and method with reflective surface
JPH07254732A (ja) * 1994-03-15 1995-10-03 Toshiba Corp 半導体発光装置
US6548956B2 (en) * 1994-12-13 2003-04-15 The Trustees Of Princeton University Transparent contacts for organic devices
JPH08195508A (ja) * 1995-01-18 1996-07-30 Sony Corp 半導体発光素子
US5932048A (en) * 1995-04-06 1999-08-03 Komatsu Electronic Metals Co., Ltd. Method of fabricating direct-bonded semiconductor wafers
WO1997001728A1 (en) * 1995-06-29 1997-01-16 Siemens Components, Inc. Localized illumination using tir technology
JPH0927642A (ja) * 1995-07-13 1997-01-28 Clarion Co Ltd 照明装置
US5780867A (en) * 1996-03-07 1998-07-14 Sandia Corporation Broadband light-emitting diode
EP1441395B9 (de) * 1996-06-26 2012-08-15 OSRAM Opto Semiconductors GmbH Lichtabstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement
JP3434658B2 (ja) * 1997-01-14 2003-08-11 サンケン電気株式会社 半導体発光装置
US6229160B1 (en) 1997-06-03 2001-05-08 Lumileds Lighting, U.S., Llc Light extraction from a semiconductor light-emitting device via chip shaping
US6784463B2 (en) * 1997-06-03 2004-08-31 Lumileds Lighting U.S., Llc III-Phospide and III-Arsenide flip chip light-emitting devices
EP1012892A1 (de) * 1997-07-31 2000-06-28 Ecole Polytechnique Féderale de Lausanne (EPFL) Elektrolumineszenzuorrichtung
US5952681A (en) 1997-11-24 1999-09-14 Chen; Hsing Light emitting diode emitting red, green and blue light
US6373188B1 (en) * 1998-12-22 2002-04-16 Honeywell International Inc. Efficient solid-state light emitting device with excited phosphors for producing a visible light output
US6521916B2 (en) * 1999-03-15 2003-02-18 Gentex Corporation Radiation emitter device having an encapsulant with different zones of thermal conductivity
US6155699A (en) * 1999-03-15 2000-12-05 Agilent Technologies, Inc. Efficient phosphor-conversion led structure
JP2000277808A (ja) * 1999-03-23 2000-10-06 Sanyo Electric Co Ltd 光源装置およびその製造方法
DE19918370B4 (de) * 1999-04-22 2006-06-08 Osram Opto Semiconductors Gmbh LED-Weißlichtquelle mit Linse
WO2000079605A1 (fr) 1999-06-23 2000-12-28 Citizen Electronics Co., Ltd. Diode électroluminescente
KR100682563B1 (ko) * 1999-07-26 2007-02-15 라보 스피아 가부시키가이샤 벌크형 렌즈, 발광체, 조명 기구 및 광 정보 시스템
US6504301B1 (en) 1999-09-03 2003-01-07 Lumileds Lighting, U.S., Llc Non-incandescent lightbulb package using light emitting diodes
DE19947030A1 (de) * 1999-09-30 2001-04-19 Osram Opto Semiconductors Gmbh Oberflächenstrukturierte Lichtemissionsdiode mit verbesserter Stromeinkopplung
JP3172947B2 (ja) * 1999-10-22 2001-06-04 ラボ・スフィア株式会社 発光体を用いた照明装置
US6357889B1 (en) * 1999-12-01 2002-03-19 General Electric Company Color tunable light source
US6573537B1 (en) * 1999-12-22 2003-06-03 Lumileds Lighting, U.S., Llc Highly reflective ohmic contacts to III-nitride flip-chip LEDs
US6729746B2 (en) * 2000-03-14 2004-05-04 Toyoda Gosei Co., Ltd. Light source device
US6777871B2 (en) * 2000-03-31 2004-08-17 General Electric Company Organic electroluminescent devices with enhanced light extraction
DE10019665A1 (de) * 2000-04-19 2001-10-31 Osram Opto Semiconductors Gmbh Lumineszenzdiodenchip und Verfahren zu dessen Herstellung
US6452217B1 (en) * 2000-06-30 2002-09-17 General Electric Company High power LED lamp structure using phase change cooling enhancements for LED lighting products
JP2002064221A (ja) * 2000-08-18 2002-02-28 Hitachi Cable Ltd 発光ダイオード
US7053419B1 (en) * 2000-09-12 2006-05-30 Lumileds Lighting U.S., Llc Light emitting diodes with improved light extraction efficiency
JP2002141556A (ja) 2000-09-12 2002-05-17 Lumileds Lighting Us Llc 改良された光抽出効果を有する発光ダイオード
US6998281B2 (en) * 2000-10-12 2006-02-14 General Electric Company Solid state lighting device with reduced form factor including LED with directional emission and package with microoptics
US6547423B2 (en) * 2000-12-22 2003-04-15 Koninklijke Phillips Electronics N.V. LED collimation optics with improved performance and reduced size
AT410266B (de) 2000-12-28 2003-03-25 Tridonic Optoelectronics Gmbh Lichtquelle mit einem lichtemittierenden element
US20020084745A1 (en) * 2000-12-29 2002-07-04 Airma Optoelectronics Corporation Light emitting diode with light conversion by dielectric phosphor powder
JP3831614B2 (ja) 2001-01-10 2006-10-11 三洋電機株式会社 発光又は受光装置の製造方法
US6573530B1 (en) * 2001-02-09 2003-06-03 Nortel Networks Limited Multiple quantum well optoelectronic devices
US6699770B2 (en) 2001-03-01 2004-03-02 John Tarje Torvik Method of making a hybride substrate having a thin silicon carbide membrane layer
DE10111501B4 (de) 2001-03-09 2019-03-21 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement und Verfahren zu dessen Herstellung
US6661167B2 (en) 2001-03-14 2003-12-09 Gelcore Llc LED devices
JP2002280614A (ja) * 2001-03-14 2002-09-27 Citizen Electronics Co Ltd 発光ダイオード
TW525278B (en) 2001-03-15 2003-03-21 Opto Tech Corp Package structure of high-efficiency electro-optical device and the forming method thereof
US6417019B1 (en) * 2001-04-04 2002-07-09 Lumileds Lighting, U.S., Llc Phosphor converted light emitting diode
KR100828351B1 (ko) 2001-04-17 2008-05-08 삼성전자주식회사 발광 소자 및 이를 적용한 디스플레이 장치
WO2002090825A1 (en) 2001-04-23 2002-11-14 Lab. Sphere Corporation Lighting device using light-emitting diode
US6607286B2 (en) * 2001-05-04 2003-08-19 Lumileds Lighting, U.S., Llc Lens and lens cap with sawtooth portion for light emitting diode
US6674096B2 (en) * 2001-06-08 2004-01-06 Gelcore Llc Light-emitting diode (LED) package and packaging method for shaping the external light intensity distribution
JP4674418B2 (ja) 2001-06-29 2011-04-20 パナソニック株式会社 照明装置
JP4055503B2 (ja) * 2001-07-24 2008-03-05 日亜化学工業株式会社 半導体発光素子
US7119271B2 (en) * 2001-10-12 2006-10-10 The Boeing Company Wide-bandgap, lattice-mismatched window layer for a solar conversion device
US6515308B1 (en) * 2001-12-21 2003-02-04 Xerox Corporation Nitride-based VCSEL or light emitting diode with p-n tunnel junction current injection
US20030215766A1 (en) 2002-01-11 2003-11-20 Ultradent Products, Inc. Light emitting systems and kits that include a light emitting device and one or more removable lenses
JP3801931B2 (ja) * 2002-03-05 2006-07-26 ローム株式会社 Ｌｅｄチップを使用した発光装置の構造及び製造方法
AU2003235453A1 (en) 2002-05-28 2003-12-12 Matsushita Electric Works, Ltd. Light emitting element, light emitting device and surface emission illuminating device using it
TW573372B (en) 2002-11-06 2004-01-21 Super Nova Optoelectronics Cor GaN-based III-V group compound semiconductor light-emitting diode and the manufacturing method thereof
AU2003270052B2 (en) * 2002-08-30 2009-02-19 Gelcore Llc Phosphor-coated LED with improved efficiency
US6784460B2 (en) * 2002-10-10 2004-08-31 Agilent Technologies, Inc. Chip shaping for flip-chip light emitting diode
TW563264B (en) * 2002-10-11 2003-11-21 Highlink Technology Corp Base of optoelectronic device
US7122734B2 (en) 2002-10-23 2006-10-17 The Boeing Company Isoelectronic surfactant suppression of threading dislocations in metamorphic epitaxial layers
JP2004158557A (ja) * 2002-11-05 2004-06-03 Shurai Kagi Kofun Yugenkoshi 類似フリップチップ型の発光ダイオード装置パッケージ
US6717362B1 (en) * 2002-11-14 2004-04-06 Agilent Technologies, Inc. Light emitting diode with gradient index layering
US7427555B2 (en) * 2002-12-16 2008-09-23 The Regents Of The University Of California Growth of planar, non-polar gallium nitride by hydride vapor phase epitaxy
EP2326143B1 (de) 2003-01-24 2013-04-24 Semiconductor Energy Laboratory Co., Ltd. Lichtemittierende Vorrichtung, Verfahren zu deren Herstellung und elektrische Vorrichtung mit solch einer lichtemittierenden Vorrichtung
JP2004265986A (ja) * 2003-02-28 2004-09-24 Citizen Electronics Co Ltd 高輝度発光素子及びそれを用いた発光装置及び高輝度発光素子の製造方法
DE10308866A1 (de) * 2003-02-28 2004-09-09 Osram Opto Semiconductors Gmbh Beleuchtungsmodul und Verfahren zu dessen Herstellung
US6835960B2 (en) * 2003-03-03 2004-12-28 Opto Tech Corporation Light emitting diode package structure
JP4526776B2 (ja) 2003-04-02 2010-08-18 株式会社半導体エネルギー研究所 発光装置及び電子機器
KR20050119685A (ko) 2003-04-08 2005-12-21 코닌클리케 필립스 일렉트로닉스 엔.브이. 양면 발광 디바이스
US7098589B2 (en) * 2003-04-15 2006-08-29 Luminus Devices, Inc. Light emitting devices with high light collimation
KR20040092512A (ko) * 2003-04-24 2004-11-04 (주)그래픽테크노재팬 방열 기능을 갖는 반사판이 구비된 반도체 발광장치
US7286296B2 (en) * 2004-04-23 2007-10-23 Light Prescriptions Innovators, Llc Optical manifold for light-emitting diodes
US20040239611A1 (en) 2003-06-02 2004-12-02 Huang Kuo Jui Double-sided light emitting backlight module
US20040263064A1 (en) 2003-06-24 2004-12-30 Cheng-Wen Huang Integrated double-sided organic light-emitting display
JP2003347586A (ja) * 2003-07-08 2003-12-05 Toshiba Corp 半導体発光素子
JP3839799B2 (ja) 2003-08-06 2006-11-01 ローム株式会社 半導体発光素子
US6958494B2 (en) 2003-08-14 2005-10-25 Dicon Fiberoptics, Inc. Light emitting diodes with current spreading layer
MY130919A (en) * 2003-09-19 2007-07-31 Mattel Inc Multidirectional light emitting diode unit
JP2005096144A (ja) 2003-09-22 2005-04-14 Fuji Photo Film Co Ltd 光定着器
JP4211559B2 (ja) * 2003-10-08 2009-01-21 セイコーエプソン株式会社 光源装置及びプロジェクタ
US20050082562A1 (en) * 2003-10-15 2005-04-21 Epistar Corporation High efficiency nitride based light emitting device
JP4590905B2 (ja) * 2003-10-31 2010-12-01 豊田合成株式会社 発光素子および発光装置
JP4124102B2 (ja) * 2003-11-12 2008-07-23 松下電工株式会社 多重反射防止構造を備えた発光素子とその製造方法
JP2005191530A (ja) * 2003-12-03 2005-07-14 Sumitomo Electric Ind Ltd 発光装置
US7704763B2 (en) 2003-12-09 2010-04-27 The Regents Of The University Of California Highly efficient group-III nitride based light emitting diodes via fabrication of structures on an N-face surface
JP3881653B2 (ja) * 2003-12-25 2007-02-14 京セラ株式会社 発光装置
US20050156510A1 (en) * 2004-01-21 2005-07-21 Chua Janet B.Y. Device and method for emitting output light using group IIB element selenide-based and group IIA element gallium sulfide-based phosphor materials
JP4976857B2 (ja) 2004-02-20 2012-07-18 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 放射線源および蛍光材料を有する照明システム
JP2005277372A (ja) * 2004-02-25 2005-10-06 Sanken Electric Co Ltd 半導体発光素子及びその製造方法
US20050189551A1 (en) * 2004-02-26 2005-09-01 Hui Peng High power and high brightness white LED assemblies and method for mass production of the same
JP4020092B2 (ja) * 2004-03-16 2007-12-12 住友電気工業株式会社 半導体発光装置
US7808011B2 (en) * 2004-03-19 2010-10-05 Koninklijke Philips Electronics N.V. Semiconductor light emitting devices including in-plane light emitting layers
TWI227063B (en) * 2004-03-19 2005-01-21 Ind Tech Res Inst Light emitting diode and fabrication method thereof
US7615798B2 (en) * 2004-03-29 2009-11-10 Nichia Corporation Semiconductor light emitting device having an electrode made of a conductive oxide
US7250728B2 (en) * 2004-04-21 2007-07-31 Au Optronics Bottom and top emission OLED pixel structure
US7315119B2 (en) * 2004-05-07 2008-01-01 Avago Technologies Ip (Singapore) Pte Ltd Light-emitting device having a phosphor particle layer with specific thickness
US7791061B2 (en) * 2004-05-18 2010-09-07 Cree, Inc. External extraction light emitting diode based upon crystallographic faceted surfaces
EP1759145A1 (de) * 2004-05-28 2007-03-07 Tir Systems Ltd. Vorrichtung und verfahren zur verbesserung der leuchtdichte
US7977694B2 (en) * 2006-11-15 2011-07-12 The Regents Of The University Of California High light extraction efficiency light emitting diode (LED) with emitters within structured materials
US8227820B2 (en) * 2005-02-09 2012-07-24 The Regents Of The University Of California Semiconductor light-emitting device
US7345298B2 (en) * 2005-02-28 2008-03-18 The Regents Of The University Of California Horizontal emitting, vertical emitting, beam shaped, distributed feedback (DFB) lasers by growth over a patterned substrate
US7768023B2 (en) * 2005-10-14 2010-08-03 The Regents Of The University Of California Photonic structures for efficient light extraction and conversion in multi-color light emitting devices
US7781789B2 (en) * 2006-11-15 2010-08-24 The Regents Of The University Of California Transparent mirrorless light emitting diode
US7582910B2 (en) * 2005-02-28 2009-09-01 The Regents Of The University Of California High efficiency light emitting diode (LED) with optimized photonic crystal extractor
US8860051B2 (en) 2006-11-15 2014-10-14 The Regents Of The University Of California Textured phosphor conversion layer light emitting diode
US7719020B2 (en) * 2005-06-17 2010-05-18 The Regents Of The University Of California (Al,Ga,In)N and ZnO direct wafer bonded structure for optoelectronic applications, and its fabrication method
JP3908240B2 (ja) 2004-06-07 2007-04-25 統寶光電股▲分▼有限公司 発光ダイオード構造
US20060001186A1 (en) * 2004-06-30 2006-01-05 Richardson Gary A IOL and method of manufacturing an IOL
JP2006024615A (ja) 2004-07-06 2006-01-26 Matsushita Electric Ind Co Ltd Ｌｅｄ照明光源およびその製造方法
JP5303696B2 (ja) * 2004-07-06 2013-10-02 独立行政法人科学技術振興機構 オプトエレクトロニクス応用のための（Ａｌ、Ｉｎ、Ｇａ）ＮおよびＺｎ（Ｓ、Ｓｅ）のウェハボンディング方法
JP4932144B2 (ja) 2004-07-12 2012-05-16 株式会社朝日ラバー Ｌｅｄランプ
JP4590994B2 (ja) * 2004-09-09 2010-12-01 豊田合成株式会社 発光装置およびその製造方法
US7223998B2 (en) * 2004-09-10 2007-05-29 The Regents Of The University Of California White, single or multi-color light emitting diodes by recycling guided modes
JP2006128227A (ja) * 2004-10-26 2006-05-18 Mitsubishi Cable Ind Ltd 窒化物半導体発光素子
US7329982B2 (en) * 2004-10-29 2008-02-12 3M Innovative Properties Company LED package with non-bonded optical element
KR100664988B1 (ko) 2004-11-04 2007-01-09 삼성전기주식회사 광추출효율이 향상된 반도체 발광소자
KR100700004B1 (ko) 2004-11-10 2007-03-26 삼성에스디아이 주식회사 양면 발광 유기전계발광소자 및 그의 제조 방법
JP3852465B2 (ja) * 2004-11-29 2006-11-29 日亜化学工業株式会社 発光装置及びその形成方法
US20060171152A1 (en) * 2005-01-20 2006-08-03 Toyoda Gosei Co., Ltd. Light emitting device and method of making the same
JP5255745B2 (ja) * 2005-01-31 2013-08-07 三菱化学株式会社 窒化物半導体発光素子
JP2006237264A (ja) 2005-02-24 2006-09-07 Kyocera Corp 発光装置および照明装置
US7291864B2 (en) * 2005-02-28 2007-11-06 The Regents Of The University Of California Single or multi-color high efficiency light emitting diode (LED) by growth over a patterned substrate
JP2006253298A (ja) * 2005-03-09 2006-09-21 Toshiba Corp 半導体発光素子及び半導体発光装置
KR100593933B1 (ko) * 2005-03-18 2006-06-30 삼성전기주식회사 산란 영역을 갖는 측면 방출형 발광다이오드 패키지 및이를 포함하는 백라이트 장치
JP2006287113A (ja) * 2005-04-04 2006-10-19 Toyoda Gosei Co Ltd 発光素子およびこれを用いた発光装置
JP2006294907A (ja) * 2005-04-12 2006-10-26 Showa Denko Kk 窒化ガリウム系化合物半導体発光素子
JP2008538055A (ja) * 2005-04-13 2008-10-02 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア （Ａｌ，Ｉｎ，Ｇａ）Ｎ薄層を作製するためのエッチング技術
JP2008537341A (ja) * 2005-04-13 2008-09-11 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 自立（Ａｌ，Ｉｎ，Ｇａ）Ｎウェーハ製作のためのウェーハ分離技術
JP2006303307A (ja) * 2005-04-22 2006-11-02 Toshiba Corp 半導体装置およびその製造方法
TW200638559A (en) * 2005-04-29 2006-11-01 Hon Hai Prec Ind Co Ltd Light emitting chip and light emitting diode
US20080191191A1 (en) * 2005-06-27 2008-08-14 Seoul Opto Device Co., Ltd. Light Emitting Diode of a Nanorod Array Structure Having a Nitride-Based Multi Quantum Well
US20070001185A1 (en) * 2005-06-29 2007-01-04 Lu Ying T LED backlight module
KR100665219B1 (ko) * 2005-07-14 2007-01-09 삼성전기주식회사 파장변환형 발광다이오드 패키지
JP4640248B2 (ja) * 2005-07-25 2011-03-02 豊田合成株式会社 光源装置
FR2892594B1 (fr) * 2005-10-21 2007-12-07 Saint Gobain Structure lumineuse comportant au moins une diode electroluminescente, sa fabrication et ses applications
KR100626365B1 (ko) 2005-10-28 2006-09-20 한국에너지기술연구원 반사형 구조의 발광다이오드
JP2009515344A (ja) * 2005-11-04 2009-04-09 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 高い光抽出効率の発光ダイオード（ｌｅｄ）
WO2007065005A2 (en) * 2005-12-02 2007-06-07 The Regents Of University Of California Improved horizontal emitting, vertical emitting, beam shaped, distributed feedback (dfb) lasers fabricated by growth over a patterned substrate with multiple overgrowth
WO2007067758A2 (en) * 2005-12-08 2007-06-14 The Regents Of The University Of California High efficiency light emitting diode (led)
JP2007165811A (ja) 2005-12-16 2007-06-28 Nichia Chem Ind Ltd 発光装置
US20070147072A1 (en) 2005-12-23 2007-06-28 General Electric Company Optical structures that provide directionally enhanced luminance
CA2857896C (en) * 2006-02-10 2017-09-12 The Flewelling Ford Family Trust Light emitting and receiving device
EP1984545A4 (de) * 2006-02-17 2013-05-15 Univ California Verfahren für das wachstum von semipolaren (al,in,ga,b)n optoelektronikbauelementen
US7390117B2 (en) * 2006-05-02 2008-06-24 3M Innovative Properties Company LED package with compound converging optical element
JP2006229259A (ja) * 2006-05-30 2006-08-31 Kyocera Corp 発光装置
JP2010509786A (ja) * 2006-11-15 2010-03-25 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 光電気化学（ｐｅｃ）エッチングによって生成されたエアギャップｉｉｉ族窒化物の構造的完全性のためのイオンビーム処理
TWI633679B (zh) * 2006-11-15 2018-08-21 美國加利福尼亞大學董事會 豎立式透明無鏡發光二極體
WO2008073435A1 (en) * 2006-12-11 2008-06-19 The Regents Of The University Of California Lead frame for transparent and mirrorless light emitting diode

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1117223A (ja) * 1997-06-25 1999-01-22 Toshiba Corp 窒化ガリウム系半導体発光素子および発光装置
US20040164311A1 (en) * 2003-02-20 2004-08-26 Toyoda Gosei Co., Ltd. Light emitting apparatus
US20060164836A1 (en) * 2003-10-31 2006-07-27 Yoshinobu Suehiro Light emitting apparatus
US20050211997A1 (en) * 2004-03-23 2005-09-29 Toyoda Gosei Co., Ltd. Solid-state element and solid-state element device
US20050224830A1 (en) * 2004-04-09 2005-10-13 Blonder Greg E Illumination devices comprising white light emitting diodes and diode arrays and method and apparatus for making them
US20060145170A1 (en) * 2005-01-03 2006-07-06 Samsung Electro-Mechanics Co., Ltd. Nitride based semiconductor light emitting device

Also Published As

Publication number Publication date
WO2008060586A3 (en) 2008-10-09
US9859464B2 (en) 2018-01-02
US8860051B2 (en) 2014-10-14
US20160133790A1 (en) 2016-05-12
WO2008060586A8 (en) 2008-08-07
EP2087563B1 (de) 2014-09-24
EP2087563A2 (de) 2009-08-12
JP2010510659A (ja) 2010-04-02
EP2843716A2 (de) 2015-03-04
US20150014732A1 (en) 2015-01-15
WO2008060586A2 (en) 2008-05-22
US9240529B2 (en) 2016-01-19
JP2014187397A (ja) 2014-10-02
EP2087563A4 (de) 2012-02-08
US20080128730A1 (en) 2008-06-05

Similar Documents

Publication Publication Date Title
WO2008060586A3 (en) Textured phosphor conversion layer light emitting diode
WO2008060584A3 (en) High light extraction efficiency sphere led
EP1983581A3 (de) Leuchtdiode mit verbesserter externer Extraktion auf kristallografischen facettierten Oberflächen
WO2008066712A3 (en) High light extraction efficiency light emitting diode (led) with emitters within structured materials
TW200733424A (en) High light extraction efficiency light emitting diode (LED)
MY142072A (en) Low optical loss electrode structures for leds
EP2117054A3 (de) Phosphor-Beleuchtungsoptik für LED-Lichtquellen
WO2007067758A3 (en) High efficiency light emitting diode (led)
WO2010033341A3 (en) Optical disk for lighting module
WO2009088410A3 (en) Light emitting devices with high efficiency phospor structures
WO2010036070A3 (ko) 고효율 유기발광소자 및 이의 제조 방법
EP2362440A3 (de) Lichtemittierende Halbleitervorrichtung
EP4235016A3 (de) Beleuchtungsvorrichtung und verfahren zur herstellung einer beleuchtungsvorrichtung
WO2010002221A3 (ko) 파장변환형 발광다이오드 칩 및 이를 구비한 발광장치
TW200620714A (en) High brightness LED package with compound optical element(s)
TW200711177A (en) Roughened high refractive index layer/LED for high light extraction
ATE548888T1 (de) Substrat einer emittierenden vorrichtung und dieses verwendende emittierende vorrichtung
MX2013002607A (es) Modulos de iluminacion a base de diodos emisores de luz con superficies de conversion de color de politetrafluoroetileno.
RU2013144759A (ru) Светоизлучающий модуль, лампа, осветительное устройство и устройство отображения
EP2575185A3 (de) Lichtemittierendes Halbleiterbauelement und dessen Herstellungsverfahren
EP1562238A3 (de) Leuchtdiode
WO2009006599A3 (en) Light emitting diode illumination system
SG140473A1 (en) Improvements in external light efficiency of light emitting diodes
WO2012164284A3 (en) Semiconductor nanoparticle - based materials for use in light emitting diodes, optoelectronic displays and the like
WO2011110175A3 (en) Led heat and photon extractor

Legal Events

Date Code Title Description
17P Request for examination filed

Effective date: 20140721

AC Divisional application: reference to earlier application

Ref document number: 2087563

Country of ref document: EP

Kind code of ref document: P

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC MT NL PL PT RO SE SI SK TR

PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

PUAL Search report despatched

Free format text: ORIGINAL CODE: 0009013

AK Designated contracting states

Kind code of ref document: A3

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC MT NL PL PT RO SE SI SK TR

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 33/50 20100101ALI20150323BHEP

Ipc: H01L 33/44 20100101ALI20150323BHEP

Ipc: H01L 33/22 20100101AFI20150323BHEP

Ipc: H01L 33/58 20100101ALI20150323BHEP

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20151030