EP2870115A1 - Dispositif générateur de faisceau d'électrons - Google Patents
Dispositif générateur de faisceau d'électronsInfo
- Publication number
- EP2870115A1 EP2870115A1 EP13709095.7A EP13709095A EP2870115A1 EP 2870115 A1 EP2870115 A1 EP 2870115A1 EP 13709095 A EP13709095 A EP 13709095A EP 2870115 A1 EP2870115 A1 EP 2870115A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- electrode
- deflection
- electron beam
- cathode
- longitudinal direction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/46—Arrangements of electrodes and associated parts for generating or controlling the ray or beam, e.g. electron-optical arrangement
- H01J29/70—Arrangements for deflecting ray or beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/04—Cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/46—Arrangements of electrodes and associated parts for generating or controlling the ray or beam, e.g. electron-optical arrangement
- H01J29/48—Electron guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J3/00—Details of electron-optical or ion-optical arrangements common to two or more basic types of discharge tubes or lamps
- H01J3/26—Arrangements for deflecting ray or beam
- H01J3/28—Arrangements for deflecting ray or beam along one straight line or along two perpendicular straight lines
- H01J3/30—Arrangements for deflecting ray or beam along one straight line or along two perpendicular straight lines by electric fields only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J31/00—Cathode ray tubes; Electron beam tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/06—Electron sources; Electron guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
- H01J37/15—External mechanical adjustment of electron or ion optical components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/0203—Protection arrangements
- H01J2237/0213—Avoiding deleterious effects due to interactions between particles and tube elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/061—Construction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/063—Electron sources
- H01J2237/06308—Thermionic sources
Definitions
- the present invention relates to a device for generating an electron beam according to the preamble of claim 1 and an arrangement of two such devices.
- deflecting means are generally used in the transverse direction of the beam two opposite electrodes, which can cause an electrostatic deflection of the electron beam.
- a disadvantage here it turns out that the maximum achievable deflection angle in such an electrostatic deflection in the range of about 7 °. Larger deflection angles would be desirable because it can reduce the size of a corresponding device.
- the problem underlying the present invention is to provide a device of the type mentioned, which allows larger deflection angle and / or in the beam profile of the
- Electron beam can be formed by simple means and / or works the low-maintenance and / or with a longer
- deflection electrode on which the electron beam can be reflected and / or has an inclined to the propagation direction of the electron beam deflection. Due to the reflection on the deflection electrode, which is a reflection on a
- Mirror corresponds to very large deflection angle, for example, between 0 ° and 180 ° possible.
- Glow cathode and the opening in the anode electrode forms an angle between 0 ° and 90 °, preferably an angle between 20 ° and 70 °, in particular an angle between 30 ° and 60 °, for example an angle of 45 °. At an angle of 45 ° would result in a deflection angle of 90 °.
- the deflection electrode is at the same potential as the cathode electrode, in particular connected to the same voltage source as the cathode electrode. By connecting to the same voltage source can be ensured that the electrons are largely completely decelerated by the deflection.
- the device comprises a further electrode which has a positive potential with respect to the deflection electrode and can accelerate the electrons after the interaction with the deflection electrode.
- the braked electrodes can be accelerated toward the additional electrode.
- This additional electrode should therefore be positioned so that the acceleration occurs at the desired deflection angle.
- the deflection means comprise two opposing electrodes, between which an alternating voltage is applied, through which the electron beam can be deflected so that thereby the beam profile of the electron beam can be designed specifically.
- AC voltage can have a frequency greater than 10kHz
- the two opposing electrodes can due to the relatively high frequency of the AC voltage the
- the alternating voltage can be influenced in a targeted manner in order to make some areas of the surface of the workpiece longer with the
- the effective beam profile of the electron beam on the workpiece corresponds to an averaged intensity distribution of the electron beam reciprocating at high speed on the workpiece. This is especially because heat processes usually proceed more slowly than the movement of the electron beam on the workpiece. It is therefore possible to selectively select or design an effective beam profile of the electron beam by means of the two electrodes and the drive AC voltage.
- the device comprises heating means which can heat the at least one deflection electrode. This proves to be particularly useful when with the Electron beam workpieces are processed so that they are partially melted so that they emit particle fumes. These particle fumes can affect the
- Heating device is the at least one, in particular the
- Output-side deflection electrode heated in such a way that the deposited on the deflection electrode particles of the workpiece are promptly evaporated again or removed again from the deflection.
- the heating means for example, a power source
- Covering means arranged so that particle vapors from the workpiece to be machined not in the range of
- Glow cathode, the cathode electrode, the anode electrode or the deflection electrode can pass.
- the device is designed so that it can generate an electron beam, which divided into a single spaced apart strips
- Devices are designed and arranged so that the strips of the first device relative to the strips of the second device so offset to each other, that in the work area a
- Fig. 1 is a schematic representation of a first
- Fig. 2 is a schematic representation in which the intensity I in a working plane of an electron beam to
- Fig. 3 is a schematic representation corresponding to Fig. 2, which represents the time averaging of the intensity of the electron beam
- Fig. 5 is a partial side view of the embodiment according to
- Fig. 6 is a perspective view of a third
- Fig. 7 is a perspective view of a fourth
- FIG. 8 is a side view of the embodiment of FIG .. 7
- the device 20 shown in Fig. 1 comprises a hot cathode 1, a cathode electrode 2 and an anode electrode 3. With regard to these parts, the device 20 is substantially equivalent to a Pierce type electron gun. It can generate an electron beam 4.
- the hot cathode 1 is formed as a wire and extends into the plane of the drawing in FIG. 1 or in one
- Electron beam 4 is arranged.
- a line-shaped cross section of the electron beam 4 is achieved, wherein the longitudinal direction of the line-shaped cross-section parallel to
- the hot cathode 1 is acted upon by voltage means, not shown, in such a way that a current flows through the hot cathode 1, which leads to a heating of the hot cathode 1.
- the hot cathode 1 may at least partially be at the same potential as the cathode electrode 2.
- the cathode electrode comprises parts 5, which extend away from the hot cathode 1 and an angle between 70 ° and 110 °, For example, include an angle of about 90 ° with each other.
- the two parts 5 extend into the plane of the drawing of FIG. 1, in particular without changing their cross section.
- the anode electrode 3 has an opening 6, through which the electron beam 4 emanating from the hot cathode 1 can pass.
- the opening 6 is in particular rectangular and can in its longitudinal direction, which in the drawing plane of FIG.
- a voltage generated by a voltage source 7 schematically indicated in FIG. 1 is present between the cathode electrode 2 and the anode electrode 3
- the voltage may be, for example, between 1 kV and 10 kV.
- the cathode electrode 2 is connected to the negative pole and the anode electrode 3 to the positive pole of the voltage source 7
- the anode electrode 3 is additionally connected to ground.
- the device 20 furthermore comprises a deflection electrode 8 serving as deflection means, which is arranged behind the anode electrode 3 in the beam path of the electron beam 4.
- the electron beam 4 facing side of the deflection 8 serves as a deflection 9.
- This deflection surface 9 encloses an angle ⁇ with the direction of propagation of the electron beam 4, which is shown in FIG.
- Embodiment is approximately equal to 45 °.
- the angle of incidence ⁇ between the incidence solder and the electron beam is 45 °.
- the deflection electrode 8 is likewise at a negative potential, in particular at the same negative potential as the cathode electrode 2. It is preferably connected to the negative pole of the same voltage source 7 as the cathode electrode 2
- Electron beam at the deflection electrode 8 come to a standstill.
- the device 20 further comprises in the propagation direction of the electron beam 4 behind the deflection electrode 8 another
- Electrode 10 having an opening 11 for the passage of the
- the further electrode 10 is connected to ground and therefore has a positive potential with respect to the deflection electrode 8. Therefore, the electrons of the electron beam 4 braked at the deflecting electrode are accelerated by the further electrode 10 toward the further electrode 10 and pass through the opening 11.
- Deflection electrode 8 also aligned at an angle of 45 °. Overall, so that the further electrode 10 perpendicular to
- the electron beam 4 is thus deflected at the deflection surface 9 by an angle of 90 °.
- the deflection electrode 8 acts together with the further electrode 10 like a mirror for the electron beam 4, as in a Reflection on a mirror of the angle of incidence ⁇ is equal to the angle of divergence ⁇ .
- the deflection surface 9 of the deflection electrode 8 may be oriented at angles other than the imaged 45 ° angle to the electron beam 4. Then, accordingly, the further electrode 10 must be aligned and positioned differently, so that the angle of incidence ⁇ corresponds to the angle of reflection ⁇ .
- Direction of deflection can be selected.
- stepper motors or piezoelectric elements can be used for this purpose.
- the further electrode 10 would then have to be pivoted and moved.
- the deflection surface 9 of the deflection electrode 8 is curved, in particular concavely curved, in order to focus the electron beam 4.
- a further deflection electrode 12 is arranged behind the further electrode 10 by way of example, behind which an additional further electrode 13 having an opening 14 is provided.
- the electron beam 4 is deflected once again by 90 °.
- the further deflection electrode 12 and the additional additional electrode 13 can also be omitted.
- more than two deflection units may also consist of one deflection electrode and another
- Electrode be provided.
- the anode electrode 3 and / or the deflection electrode 8, 12 and / or the further electrode 10, 13 have a corresponding structuring in the longitudinal direction of the forming the hot cathode 1 wire.
- two electrodes 15, 16 acting as a plate capacitor are provided behind the two additional electrodes 12, 13, to which an alternating voltage is applied.
- the alternating voltage may for example have a frequency greater than 10 kHz, preferably between 25 kHz and 75 kHz, in particular between 40 kHz and 60 kHz, for example a frequency of 50 kHz.
- the two additional electrodes 12, 13 can also be omitted. They merely serve to shape the beam profile of the electron beam 4, as will be explained in more detail below.
- the two acting as a plate capacitor electrodes 15, 16 can because of the relatively high frequency of the AC voltage, the electron beam 4 at high speed on a workpiece to be machined (not shown) back and forth.
- the AC voltage can be influenced in a targeted manner in order to apply some time to the electron beam 4 to some areas of the surface of the workpiece than to other areas.
- FIG. 2 shows by way of example a narrow electron beam which is moved in a position coordinate X on a workpiece which
- Fig. 2 corresponds to the direction perpendicular to the longitudinal extent of the cross section of the electron beam line. It is in Fig. 2 applied to the top of the intensity of the electron beam 4.
- FIG. 3 shows a schematic representation corresponding to FIG. 2, which reproduces the time-averaging of the intensity of the electron beam.
- FIG. 3 shows a schematic representation corresponding to FIG. 2, which reproduces the time-averaging of the intensity of the electron beam.
- Electron beam transmitted thermal energy caused corresponds to the exemplary averaged in Fig. 3 illustrated
- Electron beam 4 on the workpiece This is particularly because heat processes usually proceed more slowly than the movement of the electron beam 4 on the workpiece.
- Fig. 3 shows only an arbitrary example. Other beam profile shapes are possible.
- the wire serving as the hot cathode 1 and / or the cathode electrode 2 and / or the anode electrode 3 and / or the deflection electrodes 8, 12 and / or the further electrode 10, 13 in FIG the longitudinal direction of the wire forming the hot cathode 1 is or are divided into segments.
- a modular construction of the device can be made possible.
- the embodiment of a device 21 depicted in FIGS. 4 and 5 differs from the first embodiment in that the second deflection electrode 12 is oriented so that the electron beam 4 is reflected from the xy plane upwards in the z direction out of the device.
- the electron beam 4 is indicated here only schematically by a circle, but in particular should have a line-shaped cross section. The line extends before the reflection at the second
- the only schematically indicated second deflection electrode 12 may be more extensive in the x-direction than in the y-direction. Furthermore, the second deflection electrode 12 may be a curved, in particular concavely curved electrode.
- the first deflecting electrode 8, which is shown only schematically, may also be more extensive in the z direction than in the x direction because of the linear cross section of the electron beam 4. Furthermore, the first deflecting electrode 8 may also be a curved, in particular concavely curved electrode.
- heating means continue to be used
- the device 21 has a power source, not shown, which is connected to the second deflection electrode 12 in such a way that a current flows through the second deflection electrode 12.
- This current should be sufficiently large to heat the second deflection electrode 12 to a sufficiently high temperature to prevent any build-up of particulate matter
- Device 22 can produce an electron beam 4 with a linear cross-section.
- Fig. 6 is a part of a Housing 18 shown, from which plate-shaped cover means 19 extend to the second deflection electrode 12.
- plate-shaped covering means 19 prevent particle vapors from the workpiece to be machined in the region of the hot cathode 1, the cathode electrode 2, the anode electrode 3 or the
- heating means for the second deflection electrode 12 are provided. Also in this third embodiment, the second deflection electrode 12 can be heated to a sufficiently high temperature to evaporate any deposits of particles of the workpiece to be machined.
- FIG. 7 and Fig. 8 fourth embodiment of a device according to the invention substantially corresponds to the arrangement of two devices 22, 22 'in FIG.
- the devices 22, 22 ' are designed so that in
- Electron beams 4, 4 'each spaced-apart strips 23, 23' are arranged.
- the intermediate space 24, 24 'between the strips 23, 23' is in each case as large as a strip 23, 23 '.
- the strips 23 of the first device 22 relative to the strips 23 'of the second device 22' are offset from one another such that on the workpiece 25 results in a continuous line, in each case a strip 23 of the first device 22 alternates with a strip 23 'of the second device 22'.
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Electron Sources, Ion Sources (AREA)
Abstract
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102012013593.9A DE102012013593B4 (de) | 2012-07-07 | 2012-07-07 | Vorrichtung zur Erzeugung eines Elektronenstrahls |
| DE102012108888 | 2012-09-20 | ||
| DE102012110627 | 2012-11-06 | ||
| PCT/EP2013/055039 WO2014009028A1 (fr) | 2012-07-07 | 2013-03-12 | Dispositif générateur de faisceau d'électrons |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| EP2870115A1 true EP2870115A1 (fr) | 2015-05-13 |
Family
ID=47878032
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP13709095.7A Withdrawn EP2870115A1 (fr) | 2012-07-07 | 2013-03-12 | Dispositif générateur de faisceau d'électrons |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9773635B2 (fr) |
| EP (1) | EP2870115A1 (fr) |
| JP (1) | JP6047654B2 (fr) |
| CN (1) | CN104603078B (fr) |
| WO (1) | WO2014009028A1 (fr) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6649812B2 (ja) * | 2016-03-09 | 2020-02-19 | 浜松ホトニクス株式会社 | 帯電処理装置及び電子源ユニット |
| US11911838B2 (en) | 2017-03-10 | 2024-02-27 | Pro-Beam Gmbh & Co. Kgaa | Electron beam installation and method for working powdered material |
| DE102017105193A1 (de) * | 2017-03-10 | 2018-09-13 | Pro-Beam Ag & Co. Kgaa | Elektronenstrahlanlage sowie Verfahren zum Bearbeiten von pulverförmigem Werkstoff |
| DE102019118657B4 (de) * | 2019-07-10 | 2024-07-25 | Vitalij Lissotschenko | Vorrichtung zur Erzeugung einer Elektronenstrahlung sowie 3D-Druck-Vorrichtung |
| DE102019124684A1 (de) * | 2019-09-13 | 2021-03-18 | Vitalij Lissotschenko | Vorrichtung zur Erzeugung einer Elektronenstrahlung sowie 3D-Druck-Vorrichtung |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2153700A (en) * | 1984-01-27 | 1985-08-29 | Sony Corp | Crystal growth |
| EP2426693A2 (fr) * | 1999-12-13 | 2012-03-07 | Semequip, Inc. | Source d'ions |
Family Cites Families (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CH196450A (de) | 1933-08-09 | 1938-03-15 | Loewe Opta Gmbh | Elektronenstrahlröhre. |
| US3080500A (en) * | 1959-06-22 | 1963-03-05 | Philco Corp | Cathode ray system |
| GB1567151A (en) | 1976-11-12 | 1980-05-14 | Atomic Energy Authority Uk | Deflection of ion beams by electrostatic mirror apparatus |
| NL8201732A (nl) | 1982-04-27 | 1983-11-16 | Bernardus Johannes Gerardus Ma | Bestralingsinrichting met bundelsplitsing. |
| DE3442243A1 (de) | 1984-11-19 | 1986-05-28 | Siemens AG, 1000 Berlin und 8000 München | Vorrichtung zur strahlenvernetzung |
| JP2609599B2 (ja) * | 1987-02-06 | 1997-05-14 | 株式会社日立製作所 | 平板形陰極線管 |
| DD268330A1 (de) | 1988-01-13 | 1989-05-24 | Akad Wissenschaften Ddr | Katodensystem fuer elektronenbeschleuniger |
| JPH0634110B2 (ja) * | 1989-05-24 | 1994-05-02 | 大阪大学長 | 楕円体面型静電ミラー及び荷電粒子の移動方向を変更する方法 |
| GB8915972D0 (en) | 1989-07-12 | 1989-08-31 | Kratos Analytical Ltd | An ion mirror for a time-of-flight mass spectrometer |
| DE4129403A1 (de) | 1991-09-04 | 1993-03-11 | Zeiss Carl Fa | Abbildungssystem fuer strahlung geladener teilchen mit spiegelkorrektor |
| DE4234740C2 (de) | 1992-10-15 | 1997-12-11 | Joachim Hentze | Verfahren zur Herstellung von optischen Elementen |
| US5376788A (en) | 1993-05-26 | 1994-12-27 | University Of Manitoba | Apparatus and method for matrix-assisted laser desorption mass spectrometry |
| DE19610881B4 (de) * | 1995-12-07 | 2008-01-10 | Limo Patentverwaltung Gmbh & Co. Kg | Mikrosystembaustein |
| US6232709B1 (en) * | 1998-10-23 | 2001-05-15 | Michael W. Retsky | Method and apparatus for deflecting and focusing a charged particle stream |
| DE19633496B4 (de) | 1996-08-20 | 2006-06-08 | Ceos Corrected Electron Optical Systems Gmbh | Monchromator für die Elektronenoptik, insbesondere Elketronenmikroskopie |
| DE19638925C2 (de) | 1996-09-23 | 2000-11-23 | Fraunhofer Ges Forschung | Elektronen-Bandstrahler |
| US5955730A (en) | 1997-06-26 | 1999-09-21 | Comstock, Inc. | Reflection time-of-flight mass spectrometer |
| DE19745771B4 (de) * | 1997-10-16 | 2005-12-22 | Unaxis Deutschland Holding Gmbh | Verfahren für den Betrieb eines Hochleistungs-Elektronenstrahls |
| DE19907858C1 (de) | 1999-02-24 | 2000-10-05 | Leica Microsys Lithography Ltd | Vorrichtung zur elektrostatischen Ablenkung eines Korpuskularstrahles |
| JP2000325441A (ja) | 1999-05-21 | 2000-11-28 | Mitsubishi Heavy Ind Ltd | 電子線照射方法 |
| DE19942142B4 (de) | 1999-09-03 | 2004-04-15 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren und Einrichtung zur Behandlung von Schüttgut, vorzugsweise von Saatgut, mit beschleunigten Elektronen |
| CN100385605C (zh) * | 2000-11-30 | 2008-04-30 | 赛米奎珀公司 | 离子注入系统及离子源 |
| DE10157403B4 (de) | 2001-11-23 | 2004-07-01 | Pro-Beam Anlagen Gmbh | Verfahren zum Schweißen von Bauteilen |
| DE102005045622B4 (de) | 2005-09-23 | 2009-04-30 | GST Gesellschaft für systembezogene Technologieentwicklung mbH | Verfahren und Anordnungen zum Nachweis der Elektronen-Spinpolarisation |
| FR2896910A1 (fr) * | 2006-01-31 | 2007-08-03 | Quantic Comm Sarl E | Procede pour generer des faisceaux intriques d'electrons, de rayons infrarouges, visibles, ultraviolets, x et gamma. |
| WO2007107211A1 (fr) | 2006-03-20 | 2007-09-27 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Dispositif de modification des propriétés de corps moulés tridimensionnels au moyen d'électrons |
| TWI484529B (zh) * | 2006-11-13 | 2015-05-11 | Mks Instr Inc | 離子阱質譜儀、利用其得到質譜之方法、離子阱、捕捉離子阱內之離子之方法和設備 |
| DE102007048618B4 (de) | 2007-10-10 | 2011-12-22 | Bruker Daltonik Gmbh | Gereinigte Tochterionenspektren aus MALDI-Ionisierung |
| DE102009051374A1 (de) | 2009-10-30 | 2011-06-16 | Robert Bosch Gmbh | Vorrichtung zum Refelektieren beschleunigter Elektronen |
| DE102010010981B4 (de) | 2010-03-10 | 2011-12-15 | Focus Gmbh | Verfahren und Analyseanordnung zur Analyse der Elektronen-Spinpolarisation |
| US9355818B2 (en) * | 2010-05-28 | 2016-05-31 | Kla-Tencor Corporation | Reflection electron beam projection lithography using an ExB separator |
| CN102446693B (zh) | 2011-11-29 | 2016-04-06 | 邱永红 | 一种带电粒子的加速方法及其应用 |
-
2013
- 2013-03-12 EP EP13709095.7A patent/EP2870115A1/fr not_active Withdrawn
- 2013-03-12 JP JP2015518902A patent/JP6047654B2/ja active Active
- 2013-03-12 WO PCT/EP2013/055039 patent/WO2014009028A1/fr not_active Ceased
- 2013-03-12 CN CN201380046452.7A patent/CN104603078B/zh active Active
- 2013-03-12 US US14/412,754 patent/US9773635B2/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2153700A (en) * | 1984-01-27 | 1985-08-29 | Sony Corp | Crystal growth |
| EP2426693A2 (fr) * | 1999-12-13 | 2012-03-07 | Semequip, Inc. | Source d'ions |
Non-Patent Citations (1)
| Title |
|---|
| See also references of WO2014009028A1 * |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2015522923A (ja) | 2015-08-06 |
| CN104603078A (zh) | 2015-05-06 |
| WO2014009028A1 (fr) | 2014-01-16 |
| US20150144800A1 (en) | 2015-05-28 |
| CN104603078B (zh) | 2018-03-23 |
| JP6047654B2 (ja) | 2016-12-21 |
| US9773635B2 (en) | 2017-09-26 |
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