EP2901501A1 - Composant à semi-conducteur émettant de la lumière - Google Patents

Composant à semi-conducteur émettant de la lumière

Info

Publication number
EP2901501A1
EP2901501A1 EP13766313.4A EP13766313A EP2901501A1 EP 2901501 A1 EP2901501 A1 EP 2901501A1 EP 13766313 A EP13766313 A EP 13766313A EP 2901501 A1 EP2901501 A1 EP 2901501A1
Authority
EP
European Patent Office
Prior art keywords
light
wavelength conversion
conversion element
spectrum
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP13766313.4A
Other languages
German (de)
English (en)
Inventor
Alexander Wilm
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of EP2901501A1 publication Critical patent/EP2901501A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8515—Wavelength conversion means not being in contact with the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8516—Wavelength conversion means having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer or wavelength conversion layer with a concentration gradient
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires

Definitions

  • LED chips for example, a blue
  • emissive LED chip downstream of a phosphor, which converts a portion of the light emitted by the LED chip blue light in yellow light.
  • Phosphor with a switched-off LED chip a yellow color impression, which can be distracting.
  • Semiconductor device to a semiconductor chip having an active region which emits light in operation with a first spectrum.
  • the semiconductor chip is in the beam path of the light with the first spectrum downstream of a wavelength conversion element that at least partially converts light with the first spectrum into light having a second spectrum.
  • the wavelength conversion element is in particular placed away from the semiconductor chip. Furthermore, the
  • the light incident from outside on the semiconductor component corresponds to a light which is not emitted by the active region of the semiconductor chip. That may mean that from the outside on the
  • Incident light is ambient light, such as sunlight and / or light coming from the semiconductor device
  • Part Spectrum means a spectral distribution of light having at least one spectral component with one wavelength or a plurality of spectral components having a plurality of wavelengths and / or ranges of wavelengths.
  • a first spectrum and a second spectrum are the same hereinafter when the spectral components of the first and the second spectrum and their relative intensities are equal, the absolute intensity of the first spectrum being equal to that of the first spectrum
  • absolute intensity of the second spectrum may differ.
  • the feature "partially” refers to the absorption, transformation and / or reflection of a
  • transforming can mean that the partial spectrum of the light with the first spectrum, that of the
  • Wavelength conversion element is at least partially converted into light with the second spectrum, and the second spectrum are not equal. This may in particular mean that the second spectrum has a spectral distribution which is different from the spectral distribution of the partial spectrum of the light with the first spectrum.
  • the wavelength conversion element can be
  • the absorption spectrum and the emission spectrum are not equal.
  • the absorption spectrum on the partial spectrum of the light with the first spectrum and the emission spectrum on the second spectrum may each comprise further spectral components which are not in the partial spectrum of the light with the first spectrum
  • Wavelength conversion element and has the
  • the absorption spectrum of the wavelength conversion element has a spectral component of this particular wavelength
  • the light of that particular wavelength will become light having one or more other wavelengths different in wavelength from the one of the wavelengths
  • Emission spectrum can give a color impression, which in itself can be undesirable. This color impression may be undesirable, for example, as that he
  • Semiconductor device emitted light can be.
  • the part of the filter layer reflected from the outside is reflected from the outside
  • the part of the light incident from the outside which is reflected by the filter layer, can therefore produce a part of the light from the outside
  • Wavelength conversion element with the filter layer perceives a different color impression than he at the sight of the
  • Wavelength conversion element would perceive alone.
  • an external observer can, in particular, perceive a light which corresponds to a superposition of the part of the light with the first spectrum, which is not converted by the wavelength conversion element, and the light with the second spectrum.
  • the filter layer is the wavelength conversion element in
  • the beam path of the light with the second spectrum can also correspond to the beam path of the light with the first spectrum, so that preferably the filter layer can also be arranged downstream of the wavelength conversion element in the beam path of the light with the second spectrum.
  • the semiconductor component can have a
  • the light emitting surface in the beam path of the light with the first spectrum and with the second spectrum.
  • the light incident on the semiconductor component from the outside can in particular be incident on the light emission surface.
  • Lichtabstrahl Structure may be arranged downstream of the filter layer in particular.
  • the light emission surface can
  • an optical element such as a light-transmissive cover, a window and / or a lens, be arranged downstream, which is an outer surface of the semiconductor device
  • the filter layer is permeable to a portion of the light with the first spectrum. In particular, then light with the first spectrum, which is not converted by the wavelength conversion element into light with the second spectrum of the
  • first element is "remotely placed" by a second element means that the first and second elements are spaced apart from each other and thus spatially separated.
  • the wavelength conversion element which is placed away from the semiconductor chip, this means in particular that the wavelength conversion element is not applied directly to the semiconductor chip and, for example, does not form a coating of the semiconductor chip.
  • Wavelength conversion element not indirectly on the
  • Semiconductor chip for example by means of an adhesive or another bonding layer, is applied to the wavelength conversion element at a close distance
  • the wavelength conversion element does not form a coating of the semiconductor chip and is remote from
  • Wavelength conversion element according to a preferred
  • Embodiment has a distance from the semiconductor chip, which is a multiple of a lateral extent of the
  • Semiconductor chips may be preferred by an edge length of the semiconductor chip perpendicular to a growth direction and along a main extension direction of the layers of
  • the multiple of the lateral extent of the semiconductor chip may be at least two times, at least three times, or at least one Five times the lateral extent of the semiconductor chip.
  • the space between the semiconductor chip and the wavelength conversion element may be free of material or may be with a gaseous medium, for example an inert gas or air, or a gel-like or solid material, for example a potting material for the
  • Semiconductor chip in particular a transparent plastic such as a silicone, epoxy, acrylate, imide, carbonate, olefin or derivatives thereof, to be filled.
  • a transparent plastic such as a silicone, epoxy, acrylate, imide, carbonate, olefin or derivatives thereof.
  • the wavelength conversion element and the semiconductor chip form two elements of the light-emitting, which can be applied and arranged independently of one another
  • Such a spaced-apart arrangement of the wavelength conversion element to the semiconductor chip can also be referred to as a so-called “remote phosphor concept", while a wavelength conversion element not placed remotely from the semiconductor chip, which is not the subject of the light-emitting semiconductor component described here, is termed "chip-level". Coating "would fall.
  • the carrier may be formed, for example, as a housing or carrier plate, and preferably based on plastic or a ceramic material.
  • the carrier may be formed as a housing, as a housing material
  • the lead frame is for mounting and electrical
  • the semiconductor chip may be arranged, for example, in a recess of the housing. In the depression, for example, an advance
  • the housing material may surround the leadframe together with the semiconductor chip.
  • the wavelength conversion element may, supported by the carrier formed as a housing, in or on the housing
  • Support wavelength conversion element on the material of the carrier and thus be placed over the semiconductor chip and placed remotely from the carrier.
  • the carrier may be formed, for example, as a plastic or ceramic plate on the electrical
  • Through holes are provided which serve for mounting and / or electrical contacting of the semiconductor chip. That placed away from the semiconductor chip
  • Wavelength conversion element can, for example, in the form a self-supporting wavelength conversion element
  • the carrier can be formed, which is arranged as a cover, for example as a cup-shaped cover, on the semiconductor chip on the carrier. Furthermore, the carrier can be formed, which is arranged as a cover, for example as a cup-shaped cover, on the semiconductor chip on the carrier. Furthermore, the carrier can be formed, which is arranged as a cover, for example as a cup-shaped cover, on the semiconductor chip on the carrier. Furthermore, the carrier can be formed, which is arranged as a cover, for example as a cup-shaped cover, on the semiconductor chip on the carrier. Furthermore, the carrier can be formed, which is arranged as a cover, for example as a cup-shaped cover, on the semiconductor chip on the carrier. Furthermore, the carrier can be formed, which is arranged as a cover, for example as a cup-shaped cover, on the semiconductor chip on the carrier. Furthermore, the carrier can be formed, which is arranged as a cover, for example as a cup-shaped cover, on the semiconductor chip on the carrier. Furthermore, the carrier can be formed, which is
  • supportive element which is for example in the form of a frame around the semiconductor chip or as a deformation of the semiconductor chip and on or in the
  • Wavelength conversion element is placed away from the semiconductor chip placed.
  • the carrier may be formed as a housing that encloses the semiconductor chip, wherein the
  • Wavelength conversion element and the filter layer are arranged on an outer side of the housing.
  • the wavelength conversion element and the filter layer are arranged on an outer side of the housing.
  • the wavelength conversion element or the wavelength conversion element and the filter layer may be arranged in or on the recess spaced from the semiconductor chip.
  • Filter layer arranged.
  • the wavelength conversion element ⁇ each of the semiconductor chip and the filter layer arranged spatially spaced.
  • Wavelength conversion element formed as a cover or window over the semiconductor chip.
  • Wellenantinkonversionselement can disk or plate-shaped or curved, ie cup-shaped, be educated. Furthermore, it is also possible that the wavelength conversion element and the filter layer together as a cover or window over the semiconductor chip
  • the wavelength conversion element is not formed as a coating of the semiconductor chip by a
  • Wavelength conversion element also not formed by a potting of the semiconductor chip, the semiconductor chip
  • Wavelength conversion substance contains.
  • the first spectrum has at least one spectral component from an ultraviolet to infrared wavelength range.
  • the first spectrum comprises a visible wavelength range. This may mean, in particular, that the semiconductor chip emits visible light during operation.
  • visible may mean, in particular, that the semiconductor chip emits visible light during operation.
  • the first spectrum preferably comprises a blue to green wavelength range and particularly preferably a blue wavelength range. It may be particularly advantageous if the of the
  • Partial spectrum of the light corresponds to the first spectrum. This may in particular also mean that the spectrum of the part of the light incident on the semiconductor component from the outside of the filter layer comprises or agrees with the said partial spectrum.
  • the filter layer may also be possible for the filter layer to at least partially cover the part of the light that is not from the
  • Wavelength conversion element reflected back.
  • the possibility may exist, at least partially from
  • Wavelength conversion element to be converted.
  • the filter layer may therefore also be suitable for the part of the partial spectrum of the light with the first
  • the filter layer is transparent to at least a portion of the light with the first spectrum, so that this part can be emitted from the semiconductor device.
  • Semiconductor device incident light for example, further spectral components of the absorption spectrum of the wavelength conversion element or the
  • the first spectrum has a blue wavelength range and the second spectrum has a yellow wavelength range.
  • Spectrum is converted, it may preferably be selected such that the semiconductor device awakens in operation a white light impression in a viewer, in which case also a further part of the light with the first
  • Filter layer just be suitable, a part of the outside of the light emitting surface of the semiconductor device
  • the filter layer can at least partially reflect a blue spectral range of the light incident on the semiconductor component from the outside.
  • the semiconductor component may have at least one blue light-emitting semiconductor chip to which a yellow-converting one
  • Subsequent wavelength conversion substance is arranged. It may be that the wavelength conversion substance by a
  • Can form light emitting surface of the semiconductor device is visible from the outside when the light emitting
  • Wavelength conversion element in an off state the filter layer, which reflects a certain proportion of ambient light as well as the light emitted from the semiconductor chip in operation light, in particular blue light, are used for subsequent adaptation of the color locus of the emitted light from the semiconductor device in operation light. This may be possible in particular if the original color location, which results from the light emitted by the light-emitting semiconductor chip and the light converted by the wavelength conversion element, undesirably in the direction of the first
  • Wavelength conversion element this is the case when the radiated from the semiconductor device color locus in
  • the filter layer may be formed such that a desired part of the through the
  • Wavelength conversion element thus in the direction of yellow or in the direction of warm white light.
  • Wavelength range so that the semiconductor device in operation also a white light impression at a
  • the first spectrum, the second spectrum, the partial spectrum and the part of the light incident on the semiconductor component from the filter layer can also be selected according to another desired color impression in each case during operation and in the switched-off state of the semiconductor component.
  • the semiconductor chip has a semiconductor layer sequence which is referred to as
  • the semiconductor layer sequence is executed.
  • the semiconductor layer sequence can be embodied, for example, on the basis of an inorganic material, for example InGaAlN. Fall under InGaAlN-based semiconductor layer sequences
  • the semiconductor layer sequence can also be based on InGaAlP, that is to say that the
  • Semiconductor layer sequence has different individual layers, of which at least one single layer of a material of the III-V compound semiconductor material system In x Al y Gai- x - y P with 0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1 and x + y ⁇ 1.
  • the semiconductor layer sequence may also comprise other II IV compound semiconductor material systems, for example an AlGaAs-based material, or II-VI material.
  • the semiconductor layer sequence can be used as active region
  • a conventional pn junction for example, a conventional pn junction, a
  • Double heterostructure a single quantum well structure (SQW structure) or a multiple quantum well structure (MQW structure) have.
  • the semiconductor layer sequence may comprise, in addition to the active region, further functional layers and functional regions, for example p-doped or n-doped ones
  • Charge carrier transport layers ie electron or
  • Such structures include the active region or the further functional layers and
  • the semiconductor chip can furthermore have a substrate on which the semiconductor layer sequence has grown or onto which the semiconductor layer sequence has been transferred after being grown on a growth substrate.
  • the semiconductor chip may be formed as a thin-film semiconductor chip.
  • a thin-film semiconductor chip can be characterized in particular by the following characteristic
  • Semiconductor layer sequence is applied or formed a reflective layer, which reflects back at least a part of the light generated in the semiconductor layer sequence in this;
  • the semiconductor layer sequence has a thickness in the range of 20 ⁇ m or less, in particular in the range of 10 ⁇ m;
  • the semiconductor layer sequence contains at least one semiconductor layer with at least one surface which has a
  • epitaxial epitaxial layer sequence i. it has as ergodically stochastic scattering behavior as possible.
  • the semiconductor chip has a different structure and is designed, for example, as a flip-chip or volume emitter known to the person skilled in the art. Furthermore, it is also possible for the semiconductor chip to be formed as an organic semiconductor chip, in particular as an organic light-emitting diode. According to a further embodiment, the
  • Wavelength conversion element at least one
  • Wavelength conversion substance can be, for example
  • cerium-doped yttrium aluminum garnets (Y 3 Al 5 O 12 : Ce, YAG: Ce), cerium-doped terbiumaluminum garnet (TAG: Ce), cerium-doped terbium-yttrium aluminum garnet have particles from the group of cerium-doped garnets
  • TbYAG: Ce cerium-doped gadolinium-yttrium aluminum granule
  • GdTbYAG cerium-doped gadolinium-terbium-yttrium aluminum garnet
  • Wavelength conversion materials can be, for example, the following:
  • Chlorosilicates as described, for example, in the publication DE 10036940 A1, the disclosure of which is incorporated herein by reference, and
  • wavelength conversion element also suitable mixtures and combinations of the above
  • Wavelength conversion substances include. Furthermore, the wavelength conversion element can be any wavelength conversion element.
  • the transparent matrix material may, for example, a
  • the wavelength conversion element can be designed, for example, as a self-supporting foil.
  • the wavelength conversion element may also have a light-transmissive carrier element, such as glass or a transparent plastic in the form of a
  • Wavelength conversion substance is applied.
  • the wavelength conversion element may be formed as a ceramic wavelength conversion element, which consists of one or more of the above
  • Wavelength conversion materials is formed or has one or more of these in a ceramic matrix material.
  • a ceramic wavelength conversion element can
  • the filter layer is formed as a dichroic mirror.
  • the filter layer may have a periodic sequence of first and second layers for this purpose.
  • the layers may comprise dielectric materials, such as oxides, nitrides and / or sulfides.
  • the first layers may have a first refractive index and the second layers a second refractive index, the first refractive index being different from the second refractive index.
  • the first layers may have a lower refractive index than the second layers and may include silicon dioxide.
  • the second layers can continue to
  • Titanium dioxide, zirconium dioxide or tantalum pentoxide may include alumina or
  • layers may have about one quarter of the wavelength of a spectral component to be reflected.
  • thickness may mean the optical path length of light in a first or second layer
  • the thicknesses of different first layers or of different second layers may be the same
  • thicknesses of different first layers or of different second layers may be different
  • it may comprise one or more pairs of first and second layers
  • the filter layer may have a major surface, where the major surface of the filter layer may be the surface of the filter layer that faces the semiconductor chip and the wavelength conversion element turned away.
  • This main surface may be, for example, the light emitting surface of the semiconductor device. The light incident on the semiconductor device from the outside can, for example, make an angle with the main surface
  • the filter layer may comprise a substrate comprising glass or plastic.
  • the filter layer on the wavelength conversion element may comprise a substrate comprising glass or plastic.
  • the wavelength conversion element is designed to be self-supporting, for example as a foil or plate in a planar or curved form.
  • the wavelength conversion element is designed to be self-supporting, for example as a foil or plate in a planar or curved form.
  • Carrier element with two facing away from each other
  • Wavelength conversion element may be applied and on the other main surface of the filter layer. Furthermore, the filter layer spatially separated from
  • Wavelength conversion element is arranged.
  • the filter layer can be arranged on the optical component.
  • An optical component can, for example, be a scattering, focusing, be collimating or diffractive optical component, for example, a lens or a lens system, a
  • the optical component can be spatially separated from the wavelength conversion element
  • Figures 1A and 1B are schematic representations of a light
  • Figure 2 is a schematic representation of a light
  • Figure 3 is a schematic representation of a light
  • Figure 4 is a schematic representation of a light
  • Figure 5 is a schematic representation of a light
  • FIGS. 1A and 1B show an exemplary embodiment of a light-emitting semiconductor component 100.
  • the light-emitting semiconductor component 100 in FIG. 1A is in operation, ie a switched-on, light
  • the light-emitting semiconductor device 100 has a light-emitting semiconductor chip 1 having an active
  • the semiconductor chip 1 can, as explained in the general part of the description a
  • the semiconductor layer sequence may have functional layers or layer sequences and may in particular comprise one or more of the compound semiconductor materials mentioned or may also be embodied as an organic light-emitting semiconductor chip.
  • the active region 11 of the semiconductor chip 1 is suitable for emitting light 31 with a first spectrum during operation, as indicated in FIG. 1A.
  • a wavelength conversion element 2 is arranged, which has a
  • Wavelength conversion substance 22 has. As indicated in the embodiment shown, the
  • Wavelength conversion substance 22 for example in one
  • Wavelength conversion element 2 may be formed, for example, as a self-supporting film. Furthermore, it may also be possible that the wavelength conversion element 2 as a ceramic wavelength conversion element, ie
  • the wavelength conversion element 2 for example, as a ceramic plate is formed, which has a ceramic wavelength conversion substance 22 in a ceramic matrix material 21.
  • the wavelength conversion element 2 is formed, which has a ceramic wavelength conversion substance 22 in a ceramic matrix material 21.
  • the wavelength conversion element 2 is formed, which has a ceramic wavelength conversion substance 22 in a ceramic matrix material 21.
  • Wavelength conversion substance 22 may be formed.
  • the wavelength conversion substance 22 is suitable, at least partially, a partial spectrum of the light 31 with the first
  • Suitable for the wavelength conversion substance 22 may be in particular materials that a
  • absorbed light may then preferably be emitted at a different wavelength than the light 31 with the first spectrum from the wavelength conversion substance 22.
  • the wavelength conversion element 2 is placed away from the light-emitting semiconductor chip 1.
  • Wavelength conversion element 2 no coating or directly glued or laminated on the layer
  • Semiconductor chip 1 forms, but spatially separated and not directly on or near the semiconductor chip 1 is arranged.
  • the light-emitting semiconductor chip 1 may have a lateral extent which, for example, corresponds to an edge length of the semiconductor chip 1 in a direction parallel to the main extension plane of the layers of the semiconductor chip 1
  • the wavelength conversion element 2 is
  • the lateral extent of the semiconductor chip 1 corresponds.
  • the lateral extent of the semiconductor chip 1 corresponds.
  • Wavelength conversion element 2 ie the extension of the wavelength conversion element 2 along its
  • Main extension directions in particular may be greater than the lateral extent of the semiconductor chip 1, at least for the most part or even completely in the beam path of the
  • Wavelength conversion element 2 is a filter layer 3
  • the filter layer 3 can during operation as in the off state of the light-emitting
  • Semiconductor device 100 may be adapted to reflect a portion 34 of an incident on the outside of the semiconductor light-emitting device 100 light 33, as in Figure 1B is indicated.
  • the light 33 incident from outside on the light-emitting semiconductor component 100 can be irradiated onto a main surface 4 of the filter layer 3 facing away from the wavelength conversion element 2.
  • the main surface 4 may, for example, the
  • Semiconductor device 100 form.
  • the filter layer 3 may be a periodic one
  • first and second layers of dielectric materials wherein the first layers have a first refractive index and the second layers have a second refractive index and the first and the second
  • Refractive index are different from each other, as stated above in the general part.
  • the filter layer 3 may also be suitable, at least a portion 312 of the light 31 with the first
  • Reflected portion 312 of the light 31 with the first spectrum can preferably be reflected back into the wavelength conversion element 2 and there from the
  • Wavelength conversion substance 21 are converted into light 32 with the second spectrum.
  • the light-emitting semiconductor device 100 can advantageous, in particular in terms of a compact design of the light-emitting semiconductor device 100 and in terms of a homogeneous color impression of the light-emitting semiconductor device 100 both in operation and in the off state.
  • the color impression of the light-emitting semiconductor component 100 awakened in a viewer during operation results from the light emitted by the light-emitting surface. This can in particular a superimposition of the part 311 of the light 31 with the first spectrum, the light
  • the allowed color impression depends on the relative intensities of the portion 311 of the light 31 with the first spectrum and the light 32 with the second spectrum.
  • the light-emitting semiconductor component 100 In an off state of the semiconductor light-emitting device 100 as shown in FIG. 1B, no light 31 having the first spectrum is generated in the active layer 11 of the semiconductor chip 1. Nevertheless, it may be possible for the light-emitting semiconductor component 100 to produce a color impression in a viewer, in particular when viewing the light-emitting surface. This may be possible because at least part of the light 33 incident from outside on the light-emitting semiconductor component 100 can be reflected at the wavelength conversion element 2, the filter layer 3 and / or the semiconductor chip 1. As indicated in FIG. 1B, at least part of the light 33 having a spectrum corresponding to the absorption spectrum of the wavelength conversion element 2 in the wavelength conversion element 2 is converted into light 32 having the second spectrum and can be radiated to the outside as converted light 32. This can lead to a color impression of the wavelength conversion element 2 in a switched-off state of the light-emitting
  • the filter layer 3 is capable of forming a part 34 of the outside emitting light
  • the spectrum of the part 34 may be selected such that by superimposing the part 34 with the light 32 converted by the wavelength conversion element 2, the undesired color impression caused by the light
  • Wavelength conversion element 2 can be caused alone, can be avoided.
  • the wavelength conversion element 2 can be caused alone, can be avoided.
  • Filter layer 3 may be formed so that the portion 34 of the light emitted from the outside of the light-emitting semiconductor device 100 light 33, which is reflected, a spectrum having one or more spectral components
  • Wavelength conversion substance 22 are included.
  • such spectral components may also be contained in the first spectrum of the light 31 generated by the active region 11 of the semiconductor chip 1 during operation.
  • the part 34 of the outside of the light-emitting semiconductor device 100 incident light 33 which is reflected from that of the filter layer 3, as well as the part 312 of the light 31 with the first spectrum of the Filter layer 3 is reflected, that is, the reflectance of the filter layer 3, depending on the angle 9 between the main surface 4 of the filter layer 3 and the direction from which the respective light is irradiated to the filter layer 3.
  • the reflectance is smaller for small angles 9, so that under small
  • the light 31 with the first spectrum has, for example, spectral components in a blue wavelength range.
  • the wavelength conversion substance 22 of the light 31 with the first spectrum has, for example, spectral components in a blue wavelength range.
  • Wavelength conversion element 2 may be suitable
  • Wavelength range, in light 32 with a second spectrum in a yellow wavelength range to convert As a result, the light emitting surface of the light emitting
  • Semiconductor device 100 emitted light, which in a viewer, for example, a white color impression
  • Wavelength conversion element 2 alone in externally incident light 33, for example, solar radiation or daylight-like room lighting, thus a yellowish color impression awaken, which may be undesirable.
  • the filter layer 3 may therefore be suitable, in particular a part 34 of the light emitting from the outside
  • Semiconductor device 100 incident light 33 with
  • Semiconductor device 100 can be awakened.
  • the filter layer 3 also includes at least a portion, for example 50%, of the light 31 with the first spectrum in the direction of the light source 31
  • Wavelength conversion element 2 is reflected back. Due to the wavelength-dependent perception of the human eye, that is, by the photometric weighting, it may be possible that a reduction of the light
  • Wavelength conversion element 2 the perceived brightness is reduced by only about 3%.
  • the light-emitting semiconductor device 100 may include
  • the light-emitting semiconductor device 100 may also be suitable for illumination devices.
  • Embodiment corresponds to the figures 1A and 1B.
  • FIG. 2 shows a light-emitting semiconductor component 101 according to a further exemplary embodiment, which has a light-emitting semiconductor chip 1 on a semiconductor substrate
  • Housing trained carrier 6 has.
  • the carrier 6 has a lead frame 60 on which the semiconductor chip 1 is mounted or electrically connected.
  • the ladder frame 60 is formed with a plastic material 61, which is the
  • Housing body forms and having a recess in which the semiconductor chip 1 is arranged.
  • the carrier 6 may be formed, for example, as a so-called "premold package”.
  • Filter layer 3 is formed as a cover of the carrier 6 and form a window and thus the light emitting surface of the light-emitting semiconductor device 101st
  • the wavelength conversion element 2 is, as in
  • Semiconductor chip 1 arranged spatially spaced.
  • support 6 may be free of material or filled with a gas, such as air, or an inert gas.
  • a gas such as air, or an inert gas.
  • the carrier 6 in the recess has a further plastic material in the form of a potting for the semiconductor chip 1, for example a silicone.
  • the potting is transparent and has no wavelength conversion substance.
  • FIG. 3 shows a light-emitting semiconductor component 102 according to a further exemplary embodiment, in which, in comparison with the exemplary embodiment of FIG.
  • Wavelength conversion element 2 and the filter layer 3 are arranged separately from each other.
  • the wavelength conversion element 2 is within the recess of the Carrier 6 placed away from the semiconductor chip 1.
  • Wavelength conversion element is between the
  • the wavelength conversion element is both of the
  • the wavelength conversion element 2 for example, within a casting for the
  • light emitting semiconductor chip 1 may be formed, for example in the form of a wavelength conversion layer, which is spaced apart by introducing a wavelength conversion substance and spatially separated from the semiconductor chip 1.
  • the potting material can in this case also the
  • Wavelength conversion element 2 form.
  • the wavelength conversion element 2 is formed self-supporting and is introduced, for example in the form of a film or a ceramic plate into the recess 6 of the carrier.
  • the filter layer 3 forms a cover of the carrier 6 and can, for example, as a Bragg reflector on a
  • Support element may be formed.
  • the carrier 6 may also have a housing which encloses the semiconductor chip on all sides, wherein the filter layer
  • FIG. 4 shows a light-emitting semiconductor component
  • a carrier 6 which is formed by a ceramic substrate 62, on which a transparent plastic material 63 for encapsulating the on the ceramic substrate 62 in comparison to the two previous embodiments
  • Ceramic substrate 2 may be printed conductors and / or
  • the wavelength conversion element 2 and the filter layer 3 are on an outer side of the carrier 6, which by a
  • FIG. 5 shows a light-emitting semiconductor component
  • the light-emitting semiconductor component 104 has a carrier 6, for example a plastic substrate or a ceramic substrate, on which a light-emitting semiconductor chip 1 is arranged and electrically contacted. Spaced apart and thus placed away from the semiconductor chip 1, the light-emitting semiconductor component 104 has a shell-shaped carrier element 5, for example in the form of a glass dome or a plastic dome, which is pure
  • the wavelength conversion element 2 for example in the form of a coating with a wavelength conversion substance, and on one outer side the filter layer 3.
  • Wavelength conversion element 2 is a cavity
  • the wavelength conversion element 2 may also be possible for the wavelength conversion element 2 to be designed to be self-supporting without the carrier element 5, made of a plastic or ceramic material having a wavelength conversion substance, and
  • dome-like over the semiconductor chip 1 is arranged.
  • Wavelength conversion element 2 according to a so-called “remote phosphor concept", which is placed away from a light-emitting semiconductor chip 1.
  • Wavelength conversion element 2 is as above
  • a filter layer 3 is arranged, the at least one part 34 of an externally to the light-emitting
  • incident light 33 reflects to superimpose a wavelength of the conversion element 2 caused color effect in the off state of the semiconductor devices and thus to modify.
  • Wavelength conversion element 2 to avoid are not necessary in the light-emitting semiconductor devices described here, so that with such additional

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  • Led Device Packages (AREA)

Abstract

L'invention concerne un composant à semi-conducteur émettant de la lumière, comportant - une puce de semi-conducteur émettant de la lumière (1) comprenant une zone active (11) qui en fonctionnement émet de la lumière (31) ayant un premier spectre, - un élément convertisseur de longueur d'onde (2) qui est placé à distance de la puce de semi-conducteur (1) et en aval de cette dernière dans la trajectoire du faisceau de la lumière (31) ayant le premier spectre et qui convertit au moins en partie la lumière (31) ayant le premier spectre en lumière (32) ayant un deuxième spectre, et - une couche filtrante (3) qui réfléchit au moins une partie (34) d'une lumière (33) incidente extérieurement au composant à semi-conducteur. La partie (34) de la lumière (33) incidente extérieurement au composant à semi-conducteur qui est réfléchie par la couche filtrante (3) possède une plage de longueur d'onde dans le domaine visible et, dans un état désactivé du composant à semi-conducteur, elle superpose un effet de couleur généré par l'élément convertisseur de longueur d'onde.
EP13766313.4A 2012-09-26 2013-09-24 Composant à semi-conducteur émettant de la lumière Withdrawn EP2901501A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102012109109 2012-09-26
DE102012111123.5A DE102012111123A1 (de) 2012-09-26 2012-11-19 Licht emittierendes Halbleiterbauelement
PCT/EP2013/069814 WO2014048906A1 (fr) 2012-09-26 2013-09-24 Composant à semi-conducteur émettant de la lumière

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EP2901501A1 true EP2901501A1 (fr) 2015-08-05

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US (1) US9373759B2 (fr)
EP (1) EP2901501A1 (fr)
CN (1) CN104737311A (fr)
DE (1) DE102012111123A1 (fr)
WO (1) WO2014048906A1 (fr)

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US9373759B2 (en) 2016-06-21
DE102012111123A1 (de) 2014-03-27
WO2014048906A1 (fr) 2014-04-03
CN104737311A (zh) 2015-06-24
US20150243855A1 (en) 2015-08-27

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