EP3082160A4 - Dispositif à semi-conducteurs et son procédé de fabrication - Google Patents

Dispositif à semi-conducteurs et son procédé de fabrication Download PDF

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Publication number
EP3082160A4
EP3082160A4 EP14868920.1A EP14868920A EP3082160A4 EP 3082160 A4 EP3082160 A4 EP 3082160A4 EP 14868920 A EP14868920 A EP 14868920A EP 3082160 A4 EP3082160 A4 EP 3082160A4
Authority
EP
European Patent Office
Prior art keywords
manufacturing
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
EP14868920.1A
Other languages
German (de)
English (en)
Other versions
EP3082160A1 (fr
Inventor
Naiqian Zhang
Fengli PEI
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dynax Semiconductor Inc
Original Assignee
Dynax Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dynax Semiconductor Inc filed Critical Dynax Semiconductor Inc
Publication of EP3082160A1 publication Critical patent/EP3082160A1/fr
Publication of EP3082160A4 publication Critical patent/EP3082160A4/fr
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/254—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes extend entirely through the semiconductor bodies, e.g. via-holes for back side contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/257—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are characterised by top-view geometrical layouts, e.g. interdigitated, semi-circular, annular or L-shaped electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H10W20/211—Through-semiconductor vias, e.g. TSVs
    • H10W20/212—Top-view shapes or dispositions, e.g. top-view layouts of the vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H10W20/211—Through-semiconductor vias, e.g. TSVs
    • H10W20/212—Top-view shapes or dispositions, e.g. top-view layouts of the vias
    • H10W20/2125—Top-view shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
EP14868920.1A 2013-12-13 2014-11-06 Dispositif à semi-conducteurs et son procédé de fabrication Ceased EP3082160A4 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201310682785.0A CN103633046B (zh) 2013-12-13 2013-12-13 半导体器件及其制造方法
PCT/CN2014/090443 WO2015085841A1 (fr) 2013-12-13 2014-11-06 Dispositif à semi-conducteurs et son procédé de fabrication

Publications (2)

Publication Number Publication Date
EP3082160A1 EP3082160A1 (fr) 2016-10-19
EP3082160A4 true EP3082160A4 (fr) 2017-05-10

Family

ID=50213915

Family Applications (1)

Application Number Title Priority Date Filing Date
EP14868920.1A Ceased EP3082160A4 (fr) 2013-12-13 2014-11-06 Dispositif à semi-conducteurs et son procédé de fabrication

Country Status (5)

Country Link
US (1) US9941400B2 (fr)
EP (1) EP3082160A4 (fr)
JP (1) JP6338679B2 (fr)
CN (1) CN103633046B (fr)
WO (1) WO2015085841A1 (fr)

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CN103633046B (zh) * 2013-12-13 2017-03-15 苏州能讯高能半导体有限公司 半导体器件及其制造方法
CN104201253B (zh) * 2014-07-10 2017-08-25 中航（重庆）微电子有限公司 一种氮化镓器件及其制造方法
CN104617092B (zh) * 2014-11-06 2018-06-22 苏州捷芯威半导体有限公司 一种半导体器件及其制作方法
CN105321993B (zh) * 2015-05-27 2019-03-29 苏州能讯高能半导体有限公司 一种半导体器件及其制备方法
US9786660B1 (en) * 2016-03-17 2017-10-10 Cree, Inc. Transistor with bypassed gate structure field
US10128365B2 (en) 2016-03-17 2018-11-13 Cree, Inc. Bypassed gate transistors having improved stability
US9960127B2 (en) 2016-05-18 2018-05-01 Macom Technology Solutions Holdings, Inc. High-power amplifier package
CN106252310B (zh) * 2016-06-02 2020-05-05 苏州能讯高能半导体有限公司 半导体器件及其制造方法
US10134658B2 (en) * 2016-08-10 2018-11-20 Macom Technology Solutions Holdings, Inc. High power transistors
JP6812764B2 (ja) * 2016-11-29 2021-01-13 日亜化学工業株式会社 電界効果トランジスタ
CN107980171B (zh) * 2016-12-23 2022-06-24 苏州能讯高能半导体有限公司 半导体芯片、半导体晶圆及半导体晶圆的制造方法
CN108630677B (zh) * 2017-03-17 2022-03-08 智瑞佳（苏州）半导体科技有限公司 一种功率器件版图结构及制作方法
CN107195673A (zh) * 2017-05-19 2017-09-22 北京华进创威电子有限公司 一种非均匀栅长GaNHEMT栅极结构及器件
CN107369708B (zh) * 2017-08-29 2020-04-07 成都海威华芯科技有限公司 一种氮化镓高电子迁移率晶体管及其制备和使用方法
CN109671773B (zh) * 2017-10-16 2020-05-05 苏州能讯高能半导体有限公司 半导体器件及其制造方法
CN109817605B (zh) * 2018-05-29 2025-02-28 苏州能讯高能半导体有限公司 半导体器件及其制备方法
US10629526B1 (en) 2018-10-11 2020-04-21 Nxp Usa, Inc. Transistor with non-circular via connections in two orientations
CN111354640B (zh) * 2018-12-21 2022-08-12 苏州能讯高能半导体有限公司 一种半导体器件及其制备方法
CN111384163A (zh) * 2018-12-28 2020-07-07 中国科学院半导体研究所 改善GaN HEMT器件散热性能的结构及布局
CN112018175B (zh) * 2019-05-30 2022-04-08 苏州捷芯威半导体有限公司 一种半导体器件及其制备方法、半导体封装结构
JP2021125528A (ja) * 2020-02-04 2021-08-30 富士通株式会社 半導体装置及び半導体装置の製造方法
US11791388B2 (en) * 2020-02-27 2023-10-17 Taiwan Semiconductor Manufacturing Company, Ltd. Source leakage current suppression by source surrounding gate structure
DE102020112069B4 (de) 2020-02-27 2022-03-03 Taiwan Semiconductor Manufacturing Co. Ltd. Source-leckstromunterdrückung durch source-umgebende gate-struktur und verfahren zur herstellung der gate-struktur
CN114078863B (zh) * 2020-10-29 2025-07-18 长江存储科技有限责任公司 半导体器件、三维存储器及半导体器件制备方法
JP7456517B2 (ja) * 2020-11-16 2024-03-27 三菱電機株式会社 トランジスタ
CN114664725B (zh) * 2020-12-23 2025-07-29 华润微电子（重庆）有限公司 GaN器件互联结构及其制备方法
CN114171072A (zh) 2021-01-15 2022-03-11 长江存储科技有限责任公司 3d存储器的配置方法、读取方法以及3d存储器
CN113906571B (zh) * 2021-08-11 2023-03-28 英诺赛科(苏州)半导体有限公司 半导体器件及其制造方法
CN113437051B (zh) * 2021-08-26 2021-11-19 深圳市时代速信科技有限公司 一种半导体器件
CN115346948B (zh) * 2022-10-14 2023-04-07 吉光半导体(绍兴)有限公司 一种半桥模块

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EP0817275A2 (fr) * 1996-06-28 1998-01-07 Murata Manufacturing Co., Ltd. FET à haute fréquence
US20110115025A1 (en) * 2009-11-17 2011-05-19 Fujitsu Limited Semiconductor device and method of manufacturing semiconductor device

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Publication number Priority date Publication date Assignee Title
US4908680A (en) * 1987-07-28 1990-03-13 Mitsubishi Denki Kabushiki Kaisha Semiconductor integrated circuit
EP0817275A2 (fr) * 1996-06-28 1998-01-07 Murata Manufacturing Co., Ltd. FET à haute fréquence
US20110115025A1 (en) * 2009-11-17 2011-05-19 Fujitsu Limited Semiconductor device and method of manufacturing semiconductor device

Non-Patent Citations (1)

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Title
See also references of WO2015085841A1 *

Also Published As

Publication number Publication date
CN103633046B (zh) 2017-03-15
CN103633046A (zh) 2014-03-12
JP6338679B2 (ja) 2018-06-06
US9941400B2 (en) 2018-04-10
WO2015085841A1 (fr) 2015-06-18
JP2016532321A (ja) 2016-10-13
US20150311332A1 (en) 2015-10-29
EP3082160A1 (fr) 2016-10-19

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