Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F71/00—Manufacture or treatment of devices covered by this subclass
  • H10F71/128—Annealing
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
  • H10F19/10—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising photovoltaic cells in arrays in a single semiconductor substrate, the photovoltaic cells having vertical junctions or V-groove junctions
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
  • H10F19/20—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising photovoltaic cells in arrays in or on a single semiconductor substrate, the photovoltaic cells having planar junctions
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F71/00—Manufacture or treatment of devices covered by this subclass
  • H10F71/121—The active layers comprising only Group IV materials
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
  • Y02E10/00—Energy generation through renewable energy sources
  • Y02E10/50—Photovoltaic [PV] energy
  • Y02E10/541—CuInSe2 material PV cells
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
  • Y02E10/00—Energy generation through renewable energy sources
  • Y02E10/50—Photovoltaic [PV] energy
  • Y02E10/547—Monocrystalline silicon PV cells
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
  • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
  • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

• the present invention relates to a method of manufacturing a stack of thin films peelable from its substrate.
• a corner of the adhesive is then raised to allow penetration of the water molecules at the interface between the substrate and the nickel layer.
• the presence of water at the interface between the nickel layer and the substrate per breaks the bonds between these two layers so that the nickel layer, and therefore the thin-film solar cell which covers it, can be detached from the substrate.
• This stack can then be glued to the desired substrate.
• the method described in this document therefore makes it possible to manufacture solar cells in thin layers on all types of substrate and not only on glass substrates.
• this method requires the use of a nickel interlayer between the substrate and the thin-film solar cell, which complicates the process.
• the process requires immersion in the water of the solar cell in thin layers, which can damage the solar cell in thin layers.
• a protective layer is deposited on the adhesive to prevent infiltration of water.
• this protective layer must be well laid to prevent water infiltration and again this complicates the process.
• the aim of the invention is to remedy the disadvantages of the state of the art by proposing a method of manufacturing a thin-film solar cell peelable from its original substrate so that it can be deposited on all types of substrates, which is simpler than those of the prior art.
• Another object of the invention is to provide a method of manufacturing a thin-film solar cell peelable from its original substrate so as to be deposited on any type of substrate that does not risk damaging the solar cell.
• the invention proposes not to deposit an interlayer between the thin-film solar cell and the substrate, but to directly use a metal layer of the thin-film solar cell as a weak layer that can be easily peeled off. substrate.
• the invention proposes deliberately and controllably introducing stresses into this metal layer by modifying the deposition parameters of this layer so that it adheres sufficiently to the substrate during the deposition steps of the other layers. of the solar cell in thin layers, but that it can be easily removed from the substrate once these deposition steps are completed.
• a first aspect of the invention relates to a method of manufacturing a thin-film solar cell on an initial substrate, the thin-film solar cell being peelable from the initial substrate, the thin-film solar cell comprising: rear metal layer for forming a rear electrical contact, a stack of thin layers having a pn junction, the method comprising the steps of: Sputtering deposition of the back metal layer on the initial substrate;
• the method according to the invention proposes deliberately and controllably introducing stresses in the rear metal layer so as to be able to easily peel it off the initial substrate at the end of the deposition steps of the layers of the thin-film solar cell. . It is then sufficient to take off, for example manually, a corner of the solar cell in thin layers, to completely take off the solar cell in thin layers. There is therefore no need to use water or intermediate layer between the thin-film solar cell and the initial substrate to be able to take off: the rear metal layer that will be used to form the rear metal contacts also serves as a layer weakness which ensures the connection between the solar cell and the initial substrate during the deposition steps and can be detached from the initial substrate at the end of these steps due to the presence of shear stresses in the rear metal layer.
• Another advantage of the process according to the invention is that it can be implemented on a large variety of initial substrates contrary to the processes of the prior art which could only be implemented on SiO 2 substrates.
• the method according to the invention may also have one or more of the following characteristics taken independently or in any technically possible combination.
• the shear stresses are preferably chosen empirically so that: the rear metal layer adheres to the initial substrate during the deposition steps of the thin film stack; the rear metal layer can be detached from the initial substrate at the end of these steps.
• the stresses introduced into the rear metal layer are therefore chosen in particular as a function of the deposition methods used to form the stack of thin layers. The more aggressive these deposition methods, the less the stresses introduced into the rear metal layer will be important, and vice versa.
• the method is particularly applicable in the case where the initial substrate is glass.
• the process could also be implemented on metal, for example stainless steel or aluminum, polymer, for example polyamide.
• Initial substrates coated with a surface diffusion barrier, for example SiO x N y , Al 2 O 3 or metal may also be used. These barriers prevent the rise of Na glass, or Iron metal.
• the rear metal layer is in molybdenum Mo.
• the rear metal layer could also be made in one of the following materials: W, Ni, Au, Ti.
• the rear metal layer is preferably deposited with the following parameters so as to create in this layer the desired shear stresses:
• the deposition power of the rear metal layer is preferably between 0.5 W / cm 2 and 10 W / cm 2 , and more preferably between
• the deposition temperature of the rear metal layer is preferably between 25 ° C and 200 ° C, and more preferably between 50 and 80 ° C;
• the deposition pressure of the rear metal layer is preferably between 1 ⁇ Bar to 1 5 ⁇ Bar, and more preferably between ⁇ Bar and 5 ⁇ Bar.
• the rear metal layer preferably has a thickness substantially equal to 450 nm.
• the method further comprises a step during which the rear metal layer is detached from the initial substrate. For this, a corner of the rear metal layer is preferably raised manually and the rear metal layer is gradually peeled from the initial substrate.
• the method further comprises a step during which the thin-film solar cell is glued to another substrate.
• This other substrate may for example be a plastic film, metal or textile, or a plastic or hard metal substrate.
• the step of depositing the stack of thin layers preferably comprises the following substeps:
• the first p-doped semiconductor is preferably a CIGS alloy.
• the stack of thin layers preferably further comprises:
• a layer of ZnO intended to form a transparent front contact - a collection grid designed to improve the collection of porters.
• the step of depositing the first semiconductor preferably comprises the following substeps:
• FIG. 1 a schematic representation of the steps of a method according to one embodiment of the invention
• FIG. 2 a schematic perspective representation of a solar cell obtained by a method according to one embodiment of the invention
• FIG. 1 represents the steps of a method for manufacturing a solar cell on a substrate 1 according to one embodiment of the invention.
• This method comprises a first step 101 of depositing a metal layer called "rear metal layer" 2 on the substrate 1.
• the rear metal layer is preferably made of molybdenum.
• This rear metal layer 2 is deposited by spraying. The deposition parameters of this back metal layer will be detailed later.
• the method then comprises a step of forming a stack of thin layers 7 having a p-n junction.
• this step of forming the thin-film stack 7 comprises a step 102 of depositing a first p-doped semiconductor 3 on the rear metal layer.
• This first doped semiconductor p is preferably a CIGS alloy.
• the step 102 of depositing the first semiconductor preferably comprises first a deposition step of a copper layer, then an indium layer and finally a gallium layer. These materials are preferably deposited by electrodeposition. The electrodeposition takes place in acidic aqueous medium so that the bond between the rear metal layer and the initial substrate must withstand this acidic aqueous medium.
• Step 102 then comprises a step of annealing at 580 ° C in a selenium atmosphere so as to cause a selenization reaction, then an annealing step at 600 ° C under a sulfur atmosphere so as to cause a blow reaction.
• Step 102 then comprises a step of passing through a bath containing KCN so as to remove all the by-products produced during the selenization and the suffering reactions.
• the formation steps of the first semiconductor 3 are therefore very aggressive and the rear metal layer must remain attached to the substrate during all of these steps.
• the step of forming the stack of thin layers then comprises a step 103 of depositing a CdS 4 cadmium sulphide layer on the first semiconductor 3, for example in a 60-micron bath. ° C.
• the step of forming the thin film stack then comprises a conductive transparent oxide deposition step 5 which will make it possible to collect the electrons from the p / n junction.
• This transparent conductive oxide 5 is preferably zinc oxide ZnO.
• the method may also comprise a step 105 for forming the electrical contacts before, as well as a step of discretizing the future individual solar cells, and a step of forming electrical collectors.
• the method according to this embodiment is particularly remarkable in that during the deposition step of the rear metal layer by spraying, the pressure, the temperature and the deposition power are chosen so as to create shear stresses in the 2. These shear stresses will allow easy to take off the rear metal layer of the substrate.
• the deposition power of the rear metal layer is preferably between 0.5 W / cm 2 and 10 W / cm 2 , and more preferably between 3 and 8 W / cm 2 ;
• the deposition temperature of the rear metal layer is preferably between 25 ° C and 200 ° C, and more preferably between 50 and
• FIGS. 3a and 3b show a peel test carried out on samples obtained by a method according to the invention.
• Each sample 12 comprises:
• FIG. 3c represents the result of the test on a sample in which the rear metal layer has been deposited under a pressure of 1 ⁇ bar.
• FIG. 3d represents the result of the test on a sample in which the rear metal layer has been deposited under a pressure of 3 ⁇ bar.
• FIG. 3e represents the result of the test on a sample in which the rear metal layer has been deposited under a pressure of 5 ⁇ bar.
• FIG. 3f represents the result of the test on a sample in which the rear metal layer was deposited under a pressure of 7 ⁇ bar.
• the greater the deposition pressure the easier the rear metal layer will peel off, since the shear stresses in the rear metal layer increase with the deposition pressure of this layer.
• the deposition pressure of the rear metal layer should not be too great, because the electrical resistance of the rear metal layer increases with the deposition pressure of this layer. A compromise must therefore be found so as to have a rear metal layer which is easily peeled but which has a not too important electrical resistance.
• the table below gives the values of the electrical resistance Rho of the rear metal layer of FIGS. 3c to 3f:
• a deposition pressure of the rear metal layer between 1 ⁇ to 15 ⁇ , and preferably between 1 and 5 ⁇ Bar allows a good compromise between a rear metal layer which is easily peeled off and a resistance of the not too high layer.
• the method according to the invention thus makes it possible to manufacture a solar cell in thin layers peelable from its initial substrate. This solar cell can then be peeled off its initial substrate and then glued on the selected substrate.
• the process may then include a step 106 in which the thin-film solar cell is peeled off the initial substrate 1 by lifting a wedge of the thin cell and pulling on it.
• the rear metal layer then separates from the initial substrate 1.
• the method may then comprise a step 1 07 during which the thin-film solar cell may be glued onto a new substrate 8.
• This new substrate 8 may for example be a plastic, metal or textile film.
• the invention is not limited to the embodiments described with reference to the figures and variants could be envisaged without departing from the framework of the invention.
• the stack of thin layers could in particular have a composition different from that described with reference to the figures, so that the deposition steps of the stack of thin layers could be different from those described with reference to the figures.

Landscapes

• Photovoltaic Devices (AREA)
• Physical Vapour Deposition (AREA)
• Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Applications Claiming Priority (2)

Publications (1)

Family

ID=50976785

Family Applications (1)

Country Status (6)

Families Citing this family (2)

Family Cites Families (8)

• 2014
  • 2014-02-05 FR FR1450890A patent/FR3017243B1/fr active Active
  • 2014-12-29 US US15/116,979 patent/US20170170359A1/en not_active Abandoned
  • 2014-12-29 EP EP14827455.8A patent/EP3103140A1/de not_active Withdrawn
  • 2014-12-29 CN CN201480074964.9A patent/CN106233469A/zh active Pending
  • 2014-12-29 JP JP2016550216A patent/JP2017507486A/ja active Pending
  • 2014-12-29 WO PCT/EP2014/079393 patent/WO2015117715A1/fr not_active Ceased

Also Published As

Similar Documents

Legal Events