EP3105571B1 - Procédé et système de capteur de mesure de la concentration de gaz - Google Patents

Procédé et système de capteur de mesure de la concentration de gaz Download PDF

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Publication number
EP3105571B1
EP3105571B1 EP15707890.8A EP15707890A EP3105571B1 EP 3105571 B1 EP3105571 B1 EP 3105571B1 EP 15707890 A EP15707890 A EP 15707890A EP 3105571 B1 EP3105571 B1 EP 3105571B1
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EP
European Patent Office
Prior art keywords
gas
sensor
measuring area
heating
sensor system
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EP15707890.8A
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German (de)
English (en)
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EP3105571A1 (fr
Inventor
Thorsten Graunke
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Ams Sensors Germany GmbH
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Ams Sensors Germany GmbH
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
    • G01N27/128—Microapparatus
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
    • G01N27/122—Circuits particularly adapted therefor, e.g. linearising circuits
    • G01N27/123—Circuits particularly adapted therefor, e.g. linearising circuits for controlling the temperature
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/0004—Gaseous mixtures, e.g. polluted air
    • G01N33/0009—General constructional details of gas analysers, e.g. portable test equipment
    • G01N33/0011—Sample conditioning
    • G01N33/0016—Sample conditioning by regulating a physical variable, e.g. pressure or temperature

Definitions

  • the present patent application relates to a method and a sensor system for measuring the concentration of at least one gas from a gas sample.
  • the concentration determination of a gas is influenced by the presence of other gases.
  • a sensor signal from a single gas may be lost in the noise of the sensor signals of competing gases, i. the sensor signal of the gas to be detected is covered or superimposed by the sensor signals of the competing gases.
  • metal-oxide sensors have high signal strengths for individual gases in certain temperature ranges, but show a superimposition of the signals for gas samples of a plurality of gases. As a result, the selectivity of known sensor devices is limited with such sensors.
  • a gas sensing device that includes a sensor and a sensor housing having a sensor cavity.
  • the sensor housing includes side walls, a closed bottom, and an open top end having a filter or screen member.
  • One Heating element of the sensor is used to raise the temperature of a sensor element to a predetermined temperature.
  • document JP 2005-134311 A indicates a semiconductor gas sensor.
  • the gas sensor includes a resistor. A temperature of the resistor is maintained at a first temperature value for a predetermined time. Subsequently, the temperature of the resistor is changed from the first to a second temperature value, and the resistance is kept at the second temperature value for a predetermined time. The gas detection is based on the values of the resistance at the different measuring steps.
  • the invention is therefore based on the object to provide a method and a sensor system for determining the concentration of a gas with higher accuracy and selectivity.
  • a method is arranged for measuring the concentration of at least one gas from a gas sample with a sensor system having a measuring area with at least one gas sensor, preferably a metal-oxide sensor, wherein the measuring area has a diffusion opening through a gas-permeable Structure is closed, characterized in that the measuring range is first heated, then turned off the heater and the change in resistance of the at least one gas sensor is measured.
  • Heating the measuring range reduces the gas concentration at constant pressure and volume in the measuring range. After switching off the heating, the concentration increases, which leads to a change in resistance in the at least one gas sensor. This allows the concentration of gases in the measuring range to be measured. Due to the concentration change produced artificially by means of diffusion, the sensitivity of the sensor system can be increased considerably.
  • the heating power is reduced to a value other than zero.
  • the temperature of the gas sample in the measuring range decreases compared to the phase in which the measuring range is heated up.
  • To determine the change in resistance of the gas sensor at least one resistance value of the gas sensor is measured at a high temperature of the measuring range and at least one resistance value of the gas sensor at a low temperature of the measuring range.
  • the selectivity of the sensor system can be increased.
  • the selectivity of the sensor system can be adjusted by a sensor heater for the at least one gas sensor and / or by the heating of the measuring range.
  • the signal strengths of metal-oxide sensors are different for different gases while maintaining the same concentration. The signal strengths can thus be changed via a temperature modulation of the sensor heater for the gas sensor and / or the heating of the measuring range.
  • the gas sample may be a single gas, a gas mixture and / or an aerosol.
  • the sensitivity and selectivity of the sensor system can be additionally increased for certain applications by the gas sample flowing through and / or diffusing through at least one preferably heatable catalyst arrangement before it reaches the sensor system or the measuring range of the sensor system.
  • the catalyst arrangement can it should be integrated into the gas-permeable structure at the diffusion opening of the measuring range.
  • the gases of the gas sample are at least partially converted by the catalyst arrangement into other gases, which are either easier to detect by the gas sensor or not detectable at all and therefore do not influence the measurement result in order to obtain a more accurate measurement result.
  • a sensor system is set up for measuring the concentration of at least one gas from a gas sample with a measuring range in which at least one gas sensor, preferably a metal-oxide sensor, is arranged and which has a diffusion opening that is closed by a gas-permeable structure and which is characterized in that the measuring range is provided with a controllable heating device for the measuring range.
  • at least one gas sensor preferably a metal-oxide sensor
  • the sensor system can also be referred to as a sensor device.
  • the method for determining the concentration of a gas can be performed with high accuracy.
  • the selectivity of the sensor arrangement can be increased by appropriate regulation of the heating device.
  • the sensor system is set up so that the measuring range is first heated by the heating device and then the heating is switched off or the heating power is reduced to a value other than 0 Watt. Furthermore, the sensor system can be set up such that a change in resistance of the at least one gas sensor is measured.
  • the structure closing the diffusion opening of the measuring region can be heated by the heating device.
  • the at least one gas sensor can also be heated so that it can be optimally adapted to the gas to be detected and thus to increase the selectivity of the sensor system.
  • the structure closing off the diffusion opening of the measuring region may be a gas-permeable grid, a mesh, a porous solid, a sponge or a membrane.
  • a modulated heat radiator can be used as a heater above the gas sensor, which can be suspended in the diffusion opening so that the gas can flow past it.
  • the temperature of the gas sample in the measuring range can thus be modulated.
  • the concentration of the various gases in the gas sample is modulated.
  • the concentration of gas of the gas sample in the measurement area in a first phase during which the measurement range is heated is different from the concentration of gas of the gas sample in the measurement area in a second phase, during which the heating is switched off or the heating power to one of 0 different value is reduced.
  • the concentration in the second phase is higher than in the first phase.
  • the measuring range can also be referred to as gas space, measuring chamber or sensor chamber.
  • the measuring range is filled by the gas sample.
  • the measuring range can be free of solids.
  • the gas-permeable structure and the at least one gas sensor at a distance from each other. This free space is called the measuring range. This distance creates the volume of the measuring range.
  • the diffusion opening is thus the inlet of the measuring range.
  • an exchange of the gas / the air in the measuring range with the gas / air outside of the sensor system takes place exclusively through the diffusion opening.
  • the measuring area has a single diffusion opening.
  • the measuring area has at least one diffusion opening. An exchange of the gas / the air in the measuring area with the gas / air outside the sensor system takes place exclusively through the at least one diffusion opening.
  • the sensor system is implemented as a microsystem, English micro-electro-mechanical system.
  • FIG. 1 shows an exemplary embodiment of a sensor system 10.
  • an embodiment of the sensor system 10 with reference to the drawing, which shows a cross section through the sensor system 10, described in more detail.
  • the sensor system 10 has a gas-tight housing 11, which encloses a measuring area 12.
  • a diffusion opening 16 of the measuring region 12 is closed by a gas-permeable structure 13.
  • a gas sensor here a metal-oxide sensor 14, and / or diffuse.
  • the gas-permeable structure 13 heated by a heater not shown with a control device. If the gas-permeable structure 13 is heated, this also heats the interior of the measuring area 12, which leads to a reduction in the gas concentration in the measuring area 12.
  • the heating of the gas-permeable structure 13 is subsequently stopped, more gas diffuses through the gas-permeable structure 13 into the measuring region 12 as a result of the cooling of the measuring region 12, which leads to a change in the resistance of the metal-oxide sensor 14.
  • This resistance change is detected by an evaluation device, not shown here. It is a measure of the gas concentration in the measuring area 12 and thus also in the environment as soon as the measuring area 12 and the surroundings have reached the same temperature.
  • the metal-oxide sensor 14 itself can also be heated. This allows it to be optimally adapted to different gases.
  • the selectivity of the sensor system 10 can be increased by a coordinated modulation of the temperature of the heaters for the gas-permeable structure 13 and for the gas sensor 14.
  • the gas-permeable structure 13 may be a membrane, a porous solid, a sponge or a grid.
  • the gas-permeable structure 13 may be made of a catalytically active material.
  • a temperature sensor not shown here, and possibly a humidity sensor in the measuring area 12, which is likewise connected to the evaluation device for the sensor signals and the control device of the heating devices for the measuring area 12 and the gas sensor 14.
  • FIG. 2A shows a further exemplary embodiment of the sensor system 10 in cross section, which is a development the in FIG. 1 shown embodiment.
  • the sensor system 10 comprises a measuring-range semiconductor body 15 which has the diffusion opening 16.
  • the measuring-range semiconductor body 15 is implemented as a micromechanical component.
  • the diffusion opening 16 is closed by the gas-permeable structure 13.
  • the measuring-range semiconductor body 15 is realized as a silicon component.
  • the measuring-area semiconductor body 15 is produced from a silicon-on-insulator wafer, abbreviated to SOI wafer.
  • the gas-permeable structure 13 has an insulator layer 35.
  • the insulator layer 35 may be silicon nitride, in particular Si 3 N 4 .
  • the gas-permeable structure 13 comprises a carrier layer 19.
  • the carrier layer 19 may be a silicon layer, in particular of monocrystalline silicon.
  • the gas-permeable structure 13 is arranged on a frame 17 of the measuring-area semiconductor body 15.
  • On the frame 17 is an insulating layer 18.
  • the insulating layer 18 may be made of silicon oxide, in particular SiO 2 .
  • the insulating layer 18 is arranged between the carrier layer 19 and the frame 17.
  • the insulator layer 35 is arranged on the carrier layer 19.
  • the measuring region 12 is, above all, a recess etched in the measuring region semiconductor body 16 using methods of micromechanics.
  • the layer structure comprising the insulator layer 35 and the carrier layer 19 has at least one opening 20, 21. Gas can diffuse through the at least one opening 20, 21 from the outer space of the sensor system 10 into the measuring area 12.
  • the two openings 20, 21 are realized as through holes.
  • Next includes the gas permeable Structure 13, a heater 22.
  • the heater 22 is realized as a heating resistor.
  • the heater 22 is disposed on the insulator layer 35.
  • the heater 22 is integrated in the gas-permeable structure 13.
  • the gas-permeable structure 13 comprises a temperature sensor 23.
  • the temperature sensor 23 may be formed as a temperature-measuring resistor.
  • the heater 22 and the temperature sensor 23 may be made of a metal thin film, particularly platinum or nickel.
  • the temperature sensor 23 is arranged next to the heater 22 on the insulator layer 35.
  • the temperature sensor 23 is located in the center of the gas-permeable structure 13.
  • the heater 22 is disposed around the temperature sensor 23.
  • the measuring-range semiconductor body 15 is thus realized as an infrared radiator.
  • the gas-permeable structure 13 comprises a gas-permeable cover layer 24.
  • the gas-permeable cover layer 24 covers the at least one opening 20, 21 in the layer structure comprising the insulator layer 35 and the support layer 19.
  • the gas-permeable cover layer 24 may be porous.
  • the gas-permeable cover layer 24 may be realized as a sintered layer.
  • the gas-permeable cover layer 24 may be made of a sintered ceramic.
  • the ceramic may, for example, mainly comprise alumina, tin oxide or silicon carbide, in particular Al 2 O 3 or SnO 2 or SiC.
  • the gas-permeable cover layer 24 can also be realized as a catalyst layer or catalyst arrangement.
  • it has, for example, palladium and / or platinum and / or gold as a material.
  • the sintered ceramic layer may thus have palladium and / or platinum and / or gold components in addition to the base material such as alumina, tin oxide or silicon carbide.
  • the gas permeable structure 13 may thus also comprise the catalyst arrangement.
  • the gas-permeable structure 13 thus has a gas-permeable grid and a porous solid.
  • the gas-permeable grid is formed by the layer structure comprising the insulator layer 35 and the carrier layer 19 and the at least one opening 20, 21 in the layer structure.
  • the porous solid can be realized by the gas-permeable cover layer 24.
  • the sensor system 10 comprises the gas sensor 14.
  • the gas sensor 14 is realized as a metal-oxide sensor, also called a metal-oxide-semiconductor gas sensor.
  • the gas sensor 14 is implemented as a micromechanical component.
  • the gas sensor 14 comprises a sensor frame 26.
  • the gas sensor 14 has a sensor membrane 25.
  • the sensor membrane 25 spans a recess 27 of the gas sensor 14.
  • the recess 27 is located between the sensor frame 26.
  • the recess 27 is etched by methods of micromechanics.
  • the sensor membrane 25 is not gas-permeable.
  • the sensor membrane 25 has a first insulator layer 28.
  • the first insulator layer 28 can be produced as a silicon nitride layer, in particular a Si 3 N 4 layer.
  • a sensor heater 29 of the gas sensor 14 is disposed above the recess 27.
  • a second insulator layer 30 is arranged on the sensor heater 29, a second insulator layer 30 is arranged.
  • the second insulator layer 30 may be deposited as a silicon nitride layer, in particular Si 3 N 4 layer.
  • the gas sensor 14 comprises an electrode arrangement 31. Furthermore, the gas sensor 14 has a sensitive layer 32.
  • the electrode arrangement 31 is located on the second insulator layer 30.
  • the electrode arrangement 31 can be realized as an interdigital electrode arrangement.
  • the sensitive layer 32 is deposited. If the gas sensor 14 is realized as a metal-oxide sensor, then the sensitive layer 32 is a metal oxide.
  • the metal oxide may be, for example, tin oxide, zinc oxide, gallium oxide or tungsten oxide, in particular SnO 2 , ZnO, Ga 2 O 3 or WO 3 .
  • the metal oxide may be impregnated with a noble metal such as palladium or platinum.
  • the metal oxide may be made as a ceramic.
  • the ceramic may be sintered and made of tin oxide, zinc oxide, gallium oxide or tungsten oxide.
  • the gas sensor 14 can thus be realized as a thick-film sensor.
  • the sensitive layer 32 is a porous layer. The layer thickness of the sensitive layer 32 is typically in the micrometer range.
  • the sensitive layer 32 may be applied, for example, by drop technique, aerosol technique, ram technique or screen printing method.
  • a drop of the starting material of the sensitive layer 32 is applied to the electrode assembly 31.
  • the drop is applied by means of a needle.
  • an aerosol is generated from the starting material, for example by evaporation.
  • the aerosol deposits on the substrate, such as the electrode assembly 31 and the second insulator layer 30; the layer thickness of the sensitive layer 32 can be adjusted by an opening time of a shutter.
  • the ram technique is using a pestle or Stamp received the starting material and applied to the electrode assembly 31. In these different processes, the starting material is tempered or subjected to an annealing process, so that the sensitive layer 32 formed as ceramic is formed.
  • the gas sensor 14 may be implemented as a thin film sensor.
  • the sensitive layer 32 is a compact layer.
  • the layer thickness of the sensitive layer 32 is typically in the nanometer range.
  • a thin sensitive layer 32 of, for example, tin oxide, zinc oxide, gallium oxide or tungsten oxide may be made by sputtering or vapor deposition.
  • the frame 26 and the sensor frame 17 form the housing 11 of the sensor system 10.
  • the measuring range semiconductor body 15 and the gas sensor 14 are connected to one another via a suitable connection technique.
  • a connection layer 33 can be arranged between the gas sensor 14 and the measuring region semiconductor body 15.
  • the connection is in FIG. 2A only hinted.
  • a temperature-resistant adhesive such as a cement adhesive, a solder, a eutectic compound, a silicon fusion bonding or an anodic compound can be used.
  • the gas sensor 14 has at least one contact surface 34, also called a bond pad. An electrically conductive connection to the bonding pad 34 from the outside can be realized, for example, before the measuring-area semiconductor body 15 is placed on the gas sensor 14.
  • the sensor system 10 has a carrier 36.
  • the carrier 36 may be a ceramic carrier, a printed circuit board, or a socket be realized.
  • the socket may be a transistor outline socket, abbreviated TO socket.
  • the carrier 36 has a carrier opening 37, which leads to the recess 27. Through the support opening 37, air / gas can flow out of the recess 27. Thus prevents the carrier opening 37 in the carrier 36, that an overpressure in the recess 27 is formed, which may lead to the destruction of the sensor membrane 25, for example.
  • the carrier opening 37 may be realized as a bore.
  • the support opening 37 serves to equalize the pressure between the recess 27 and the environment.
  • the sensor frame 26 is connected to the carrier 36 via a connection technology, not shown.
  • the sensor heater 29 is supplied via two bonding pads 34 electrical energy.
  • the sensor heater 29 heats the sensor membrane 25 and thus the sensitive layer 32.
  • the change in resistance in the sensitive layer 32 is measured by the electrode assembly 31.
  • a sensor signal S3 can be tapped on two further bond pads. Of the four bond pads in total, the bonding pad 34 is shown by way of example.
  • the heating device 22 heats the layer structure comprising the insulator layer 35 and the carrier layer 19, as well as the gas-permeable cover layer 24.
  • the volume of the measuring area 12 is heated.
  • the air or the gas, which is located in the measuring area 12 is heated by the heating device 22.
  • the temperature sensor 23 is used to measure the temperature of the gas-permeable structure 13.
  • the measuring region 12 is realized in particular by the recess in the frame 17.
  • the measuring area 12 is the space enclosed by the sensor membrane 25, the frame 17 and the gas-permeable structure 13.
  • the heater 22 and the Sensor heater 29 lead to a heating of the air / gas in the measuring range 12.
  • a resulting from the heating pressure is reduced by the at least one opening 20, 21.
  • the concentration of a gas is the number of molecules of the gas per unit volume. The concentration of the gas decreases by heating the measuring area 12.
  • the temperature of the air / gas in the measuring range 12 decreases, so that gas / air diffuses through the gas-permeable cover layer 24 into the measuring range 12.
  • the concentration of the gas thus increases as the temperature decreases.
  • the air / gas flowing in the measuring region 12 changes with respect to the air / gas which is located outside the sensor system 10.
  • carbon monoxide for example, can be converted into carbon dioxide.
  • different temperatures are set in the gas-permeable structure 13. In one example, the temperature in the gas permeable structure may be 350 to 400 ° C.
  • the heater 22 also serves as a temperature sensor.
  • the temperature sensor 23 can be omitted.
  • the gas-permeable cover layer 24 has no catalytically active constituents.
  • the gas-permeable cover layer 24 can be omitted. Since the dimensions of the openings 20, 21 are kept very small, the gas exchange of the measuring area 12 with the space outside the sensor system 10 takes place exclusively by diffusion.
  • the carrier layer 19 can be omitted.
  • the gas-permeable structure 13 is thus free of monocrystalline silicon.
  • the gas sensor 14 is implemented as a catalytic sensor.
  • a catalytic sensor has no sensor electrodes 31. If the gas sensor 14 is implemented as a catalytic converter, it has the sensor frame 26, the sensor diaphragm 25, the sensor heater 29 and the sensitive layer 32.
  • the sensitive layer 32 is realized as a catalytically active layer.
  • the catalytically active layer has, for example, a noble metal such as platinum or palladium or metal oxides such as manganese oxide or copper (II) oxide. If gas is reacted in the measuring region 12 on the sensitive layer 32, the reaction leads to an increase in the temperature of the sensor membrane 25. The temperature increase can be determined by means of an additional temperature sensor or by determining the resistance of the sensor heater 29.
  • the gas sensor 14 is realized as a thermal conductivity sensor.
  • the gas sensor 14 measures the thermal conductivity between the sensor membrane 25 and the gas-permeable structure 13. If gas with a high thermal conductivity flows into the measuring region 12, the heat conduction between a hot surface and a cold surface increases.
  • the heater 22 may be turned on and the sensor heater 29 may be turned off.
  • the heating of the sensor membrane 25 is measured by a thermally conductive gas having the gas-permeable structure 13 as a heat source.
  • the increase in the temperature of the sensor membrane 25 is the stronger, the better thermally conductive the gas in the measuring region 12 is.
  • the temperature change of the gas-permeable structure 13 is measured.
  • the temperature of the gas-permeable structure 13 increases more in the case of a gas having little heat-conducting in the measuring region 12 than in the case of a gas with a greater thermal conductivity.
  • the sensor membrane 25 is heated by means of the sensor heater 29, the heater 23 is deactivated and the heat transfer from the sensor membrane 25 to the gas-permeable structure 13 is measured. Again, either the change in the temperature of the sensor membrane 25 or the gas-permeable structure 13 can be measured.
  • the gas sensor 14 may thus be used as a chemical gas sensor - such as a metal-oxide sensor - as a chemical / physical gas sensor - such as a catalytic sensor - or as a physical gas sensor - such as Thermal conductivity sensor - be implemented.
  • the gas sensor 14 may be realized as a humidity sensor.
  • FIG. 2B shows an exemplary embodiment of the sensor system 10 in plan view, which is a development of in FIGS. 1 and 2A shown embodiments of the sensor system 10 is.
  • the gas-permeable structure 13 is realized as a gas-permeable grid and has in addition to the cross-section in FIG. 2A shown openings 20, 21 two further openings 40, 41.
  • the openings 20, 21, 40, 41 are approximately realized as rectangles or elongated slots.
  • the openings 20, 21, 40, 41 are arranged approximately at an inner edge of the frame 17. Only narrow webs 42 to 45 connect the frame 17 to an inner region of the gas-permeable structure 13.
  • the gas-permeable structure 13 can thus have exactly four openings 20, 21, 40, 41.
  • the center of the gas-permeable structure 13 is heated.
  • the measuring-range semiconductor body 15 has a further temperature sensor 46.
  • the further temperature sensor 46 is arranged here on the frame 17.
  • the further temperature sensor 46 may be provided in addition to or instead of the temperature sensor 23 arranged on the gas-permeable structure 13.
  • FIG. 3 shows a further exemplary embodiment of a plan view of the sensor system 10, a further development of in FIGS. 1 . 2A and 2 B shown embodiments.
  • the gas-permeable structure 13 in this case has the opening 20.
  • the gas-permeable structure 13 is realized as a thin membrane, so that advantageously the heating power is kept low.
  • the number of openings 20 the gas-permeable structure 13 may be exactly one.
  • the opening 20 is realized in a circular shape.
  • the opening 20 is located approximately in the middle of the gas-permeable structure 13. The opening 20 is thus approximately in the middle of the frame 17th
  • the gas-permeable structure 13 may have additional openings.
  • the additional openings can also be realized in a circle.
  • the additional openings may be arranged regularly on the gas-permeable structure 13.
  • the gas-permeable structure 13 is realized as a membrane which closes off the diffusion opening 16.
  • FIG. 4 shows a further exemplary embodiment of the sensor system 10, a further development of the in the FIGS. 1 . 2A . 2B and 3 shown embodiments.
  • the sensor system 10 comprises at least one further sensor 50.
  • the further sensor 50 and the gas sensor 14 are integrated on a semiconductor body.
  • the further sensor 50 may be, for example, another gas sensor or a humidity sensor.
  • the further sensor 50 may be arranged on the sensor frame 26.
  • the further sensor 50 comprises a further electrode arrangement 51 and a further sensitive layer 52.
  • the further sensitive layer 52 is a moisture-absorbing dielectric.
  • the further electrode arrangement 51 detects changes in the moisture-sensitive dielectric.
  • the further electrode assembly 51 is mounted on the first insulator layer 28. The gas / air in the measuring area 12 is thus in contact with the gas sensor 14 and the further sensor 50.
  • the Further sensor 50 thus detects a further parameter in the measuring range 12.
  • the measuring-area semiconductor body 12 is realized in such a way that the at least one bonding pad 34 can be contacted from the outside.
  • a width of the measuring-area semiconductor body 12 is thus smaller than a width of the semiconductor body comprising the gas sensor 14.
  • the further sensor 50 is realized according to the gas sensor 14.
  • the further sensor 50 comprises a further sensor membrane and a further recess.
  • FIG. 5 shows an exemplary embodiment of an electrical circuit diagram of the sensor system 10.
  • the sensor system 10 includes an evaluation device 60. To the evaluation device 60, the gas sensor 14, the heater 22 and the temperature sensor 23 are connected.
  • the evaluation device 60 has a control device 61, which supplies the heating device 22 with electrical energy in the form of a heating power S1. By means of the control device 61, the heater 22 is regulated.
  • the heater 22 can be realized as a resistor. The resistance is temperature dependent.
  • the temperature sensor 23 provides a temperature sensor signal S2.
  • the temperature sensor signal S2 may depend, for example, on a resistance value of the temperature sensor 23.
  • the control device 61 may have different control mechanisms.
  • the controller 61 may be designed to turn on the heater 22 first and then turn off.
  • control device 61 can provide a heating power S1 with a constant value SC of the heating device 22 in a first phase A.
  • the controller 61 may be configured to set a first constant temperature of the measurement region 12 in the first phase A.
  • the control device 61 can provide such a heating power S1 to the heating device 22 that a resistance value of the heating device 22 is constant. It can thus be set by the control device 61, a constant temperature value of the measuring range 12. The temperature value can be determined by means of the temperature sensor 23.
  • the control device 61 can be designed to set a second constant temperature of the measuring range 12 above the room temperature in a second phase B or to set the heating power S1 to 0 Watt and thus to switch off the heating in the second phase B.
  • the controller 61 may provide the heat output S1 pulse width modulated.
  • the controller 61 may be implemented to perform power modulation.
  • the controller 61 may gradually increase and / or also gradually decrease the heating power S1 provided to the heater 22.
  • the evaluation device 60 comprises a sensor control device 62, which is coupled to the gas sensor 14.
  • the sensor heater 29 is connected to the sensor controller 62.
  • the sensor control device 62 can be realized according to one of the above-described variants for the control device 61. In this case, a constant temperature value of the sensor diaphragm 25 can be set by the sensor control device 62.
  • the heater 22 and the sensor heater 29 may be set independently, for example.
  • the gas sensor 14 provides a sensor signal S3.
  • the sensor signal S3 may be formed, for example, as a current signal, wherein a constant voltage is applied to the electrode assembly 31.
  • the sensor signal S3 may be formed as a voltage, with a constant current flowing through the electrode arrangement 31 through the sensitive layer 32.
  • the sensor signal S3 can thus represent a resistance value of the sensitive layer 32.
  • the evaluation device comprises a microcontroller 65, which is coupled to the gas sensor 14, the heating device 22 and the temperature sensor 23.
  • the controller 61 connects the microcontroller 65 to the heater 22.
  • the sensor controller 62 couples the microcontroller 65 to the gas sensor 14.
  • a sensor filter 63 couples the gas sensor 14 and the microcontroller 65.
  • the microcontroller 65 may include at least one analog-to-digital converter for digitizing the Temperature sensor signal S2 and / or the sensor signal S3 include.
  • the control device 61 and / or the sensor control device 62 can also be implemented in the microcontroller 65.
  • the microcontroller 65 Via an input 66, the microcontroller 65 data is transmitted.
  • the data may be, for example, commands such as power on and off or calibration data.
  • the microcontroller 65 has at least one output 67.
  • the output 67 can be realized as a digital output and / or as an analog output.
  • the microcontroller 65 performs a calculation using the sensor signal S3 of the gas sensor 14.
  • the microcontroller 65 is designed to control the heater 22 and the sensor heater 29 and to evaluate the sensor signal S3 and the temperature signal S2.
  • the microcontroller 65 may, for example, provide the digitized sensor signal S3 at its output 67.
  • the microcontroller 65 may provide at its output 67 information about a gas concentration determined by the sensor signal S3.
  • the microcontroller 61 evaluates values of the sensor signal S3, which have been determined during or at the end of a heating phase, and values of the sensor signal S3, which have been determined after switching off the heating or reducing the heating power S1 to a value other than 0 W, out.
  • a microprocessor instead of the microcontroller 65, a microprocessor may be provided instead of the microcontroller 65.
  • FIG. 6 shows an exemplary embodiment of the signals in the sensor system 10.
  • the heating power S1, the temperature sensor signal S2 and the sensor signal S3 are about the time t applied.
  • a period consists of the first and the second phase A, B. While in the first phase A the heating power S1 assumes the value SC, the heating power S1 in the second phase B has the value 0.
  • a period T of the period is thus the sum from a first duration TA of the first phase and a second duration TB of the second phase B.
  • the first phase A and the second phase B alternate.
  • the period T can be constant.
  • the temperature sensor signal S2 increases in the first phase A and drops in the second phase B.
  • the second duration TB of the second phase B may be chosen so short that the temperature sensor signal S2 does not drop to the value at room temperature.
  • p ⁇ V n ⁇ R m ⁇ T .
  • p is the pressure in the measuring range 12
  • V is the volume of the measuring range 12
  • n is the molar mass of all gases in the measuring range 12
  • R m is the general gas constant
  • T is the absolute temperature in the measuring range 12.
  • the pressure p and the volume V of the measuring region 12 are approximately constant. Therefore, the amount of substance and thus the particle number of all gases and thus the concentration of a gas is proportional to the reciprocal 1 / T of the absolute temperature. At high temperature in the measuring range 12, the concentration of the molecules is thus lower than at low temperature in the measuring range 12.
  • n 2 n 1 ⁇ T 1 / T 2 .
  • n 2 is the amount of substance in the measuring region 12 at the temperature T 2 in the measuring region 12
  • n 1 is the substance quantity in the measuring region 12 at the temperature T 1 in the measuring region 12.
  • the values for the first duration TA, the second duration TB and the heating power S1 in the first phase A are selected such that a change in the concentration of the gas in the measuring range 12 occurs. Switching off the heating device 22 when changing from the first phase A to the second phase B thus leads to an increase in the concentration of the gas.
  • the sensor signal S3 depends on the concentration of the gas for which the sensitive layer 32 is sensitive, and therefore depends on the temperature sensor signal S2.
  • the sensor signal S3 may be the resistance value of the gas sensor 14.
  • the increase, for example, of a carbon monoxide concentration in the measuring region 12 leads to a reduction of the sensor signal S 3. This results in a resistance change ⁇ R.
  • To determine the concentration of the gas at least one value of the sensor signal S3 in the first phase A and at least one value of the sensor signal S3 in the second phase B are measured. The concentration of the gas can be determined from the values of the sensor signal S3 determined in this way.
  • the concentration of the gas determined by the sensor system 10 is a function of the at least one value of the sensor signal S3 in the first phase A and the at least one value of the sensor signal S3 in the second phase B.
  • the concentration determined by the sensor system 10 may be a function of Difference ⁇ R of the values of the sensor signal S3.
  • the temperature of the gas sensor 14 is kept approximately constant in one period. To increase the selectivity, the temperature of the gas sensor 14 may be set differently in successive periods.
  • a waveform has more than two phases.
  • the more than two phases have different heating powers.
  • the heating power S1 during the second phase B has a value greater than 0 watts.

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Claims (15)

  1. Procédé pour la mesure de la concentration d'au moins un gaz issu d'un échantillon de gaz avec un système de capteur (10) qui présente une zone de mesure (12) comprenant au moins un capteur de gaz (14), sachant que la zone de mesure (12) présente une ouverture de diffusion (16) qui est obturée par une structure (13) perméable aux gaz,
    caractérisé en ce que
    la zone de mesure (12) est d'abord réchauffée, puis un chauffage est coupé ou la puissance de chauffe (S1) est réduite à une valeur différente de 0 et la variation de résistance de l'au moins un capteur de gaz (14) est mesurée.
  2. Procédé selon la revendication 1, caractérisé en ce que la sélectivité du système de capteur (10) est réglée par un dispositif de chauffe de capteur (29) pour l'au moins un capteur de gaz (14) et/ou par le chauffage de la zone de mesure (12).
  3. Procédé selon la revendication 1 ou 2, caractérisé en ce que l'échantillon de gaz est un gaz individuel, un mélange de gaz et/ou un aérosol.
  4. Procédé selon l'une des revendications précédentes, caractérisé en ce que l'échantillon de gaz s'écoule et/ou se diffuse à travers au moins un agencement de catalyseur avant d'atteindre le système de capteur (10) ou la zone de mesure (12).
  5. Procédé selon l'une des revendications 1 à 4, sachant que le capteur de gaz (14) est réalisé comme capteur à oxyde métallique.
  6. Procédé selon l'une des revendications 1 à 5, sachant que le système de capteur (10) comprend un dispositif de chauffe (22) pour le réchauffage de l'échantillon de gaz dans la zone de mesure (12).
  7. Procédé selon l'une des revendications 1 à 6, sachant que l'au moins un capteur de gaz (14) comprend un dispositif de chauffe de capteur (29) pour le réchauffage d'une couche sensible (32) du capteur de gaz (14) .
  8. Procédé selon l'une des revendications 1 à 7, sachant que la concentration d'un gaz de l'échantillon de gaz dans la zone de mesure (12) dans une première phase (A) pendant laquelle la zone de mesure (12) est réchauffée est différente de la concentration du gaz de l'échantillon de gaz dans la zone de mesure (12) dans une deuxième phase (B) pendant laquelle le chauffage est coupé ou la puissance de chauffe est réduite à la valeur différente de 0.
  9. Système de capteur pour la mesure de la concentration d'au moins un gaz issu d'un échantillon de gaz avec une zone de mesure (12) dans laquelle au moins un capteur de gaz (14) est disposé et qui présente une ouverture de diffusion (16) qui est obturée par une structure (13) perméable aux gaz, sachant que la zone de mesure (12) est pourvue d'un dispositif de chauffe (22) réglable pour la zone de mesure,
    caractérisé en ce que
    le système de capteur (10) est configuré de telle façon que la zone de mesure (12) soit d'abord réchauffée par le dispositif de chauffe (22) puis le chauffage soit coupé ou la puissance de chauffe (S1) soit réduite à une valeur différente de 0 ainsi que la variation de résistance de l'au moins un capteur de gaz (14) soit mesurée.
  10. Système de capteur selon la revendication 9, caractérisé en ce que la structure (13) perméable aux gaz obturant l'ouverture de diffusion (16) de la zone de mesure peut être chauffée par le dispositif de chauffe (22).
  11. Système de capteur selon la revendication 9 ou 10, caractérisé en ce que l'au moins un capteur de gaz (14) peut être chauffé par un dispositif de chauffe de capteur (29).
  12. Système de capteur selon l'une des revendications 9 à 11, caractérisé en ce que la structure (13) perméable aux gaz obturant l'ouverture de diffusion (16) de la zone de mesure (12) est une grille perméable aux gaz, un filet, un corps solide poreux, une éponge ou une membrane.
  13. Système de capteur selon l'une des revendications 9 à 12, sachant que la structure (13) perméable aux gaz comprend une couche de recouvrement (24) perméable aux gaz.
  14. Système de capteur selon l'une des revendications 9 à 13, caractérisé en ce que le capteur de gaz (14) est réalisé comme capteur à oxyde métallique.
  15. Système de capteur selon l'une des revendications 9 à 14, sachant que le système de capteur (10) est configuré de telle façon que la concentration d'un gaz de l'échantillon de gaz dans la zone de mesure (12) dans une première phase (A) pendant laquelle la zone de mesure (12) est réchauffée est différente de la concentration du gaz de l'échantillon de gaz dans la zone de mesure (12) dans une deuxième phase (B) pendant laquelle le chauffage est coupé ou la puissance de chauffe est réduite à la valeur différente de 0.
EP15707890.8A 2014-02-11 2015-02-11 Procédé et système de capteur de mesure de la concentration de gaz Active EP3105571B1 (fr)

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DE102014101657.2A DE102014101657A1 (de) 2014-02-11 2014-02-11 Verfahren und Sensorsystem zur Messung der Konzentration von Gasen
PCT/EP2015/052891 WO2015121312A1 (fr) 2014-02-11 2015-02-11 Procédé et système de capteur de mesure de la concentration de gaz

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US20160349201A1 (en) 2016-12-01
EP3105571A1 (fr) 2016-12-21
US11156577B2 (en) 2021-10-26
US10338021B2 (en) 2019-07-02
US20190271655A1 (en) 2019-09-05
DE102014101657A1 (de) 2015-08-13

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